IPSA70R2K0CE MOSFET 700VCoolMOSªCEPowerTransistor IPAK-shortleadwithISO-Standoff CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEisa price-performanceoptimizedplatformenablingtotargetcostsensitive applicationsinConsumerandLightingmarketsbystillmeetinghighest efficiencystandards.Thenewseriesprovidesallbenefitsofafast switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket. Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications •Standoffisolationbetweenleads Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Applications (QR)Flybackinlowpowerchargersformobiledevicesandpowertools Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 750 V RDS(on),max 2000 mΩ ID 4 A Qg.typ 7.8 nC ID,pulse 6.3 A Eoss@400V 0.85 µJ Type/OrderingCode Package IPSA70R2K0CE PG-TO 251 Final Data Sheet Marking 70S2K0CE 1 RelatedLinks see Appendix A Rev.2.0,2016-09-07 700VCoolMOSªCEPowerTransistor IPSA70R2K0CE TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Final Data Sheet 2 Rev.2.0,2016-09-07 700VCoolMOSªCEPowerTransistor IPSA70R2K0CE 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 4 2.6 A TC=25°C TC=100°C - 6.3 A TC=25°C - - 11 mJ ID=0.4A; VDD=50V; see table 10 EAR - - 0.07 mJ ID=0.4A; VDD=50V; see table 10 Avalanche current, repetitive IAR - - 0.4 A - MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...480V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 42 W TC=25°C Storage temperature Tstg -40 - 150 °C - Operating junction temperature Tj -40 - 150 °C - Continuous diode forward current IS - - 2.9 A TC=25°C Diode pulse current IS,pulse - - 6.3 A TC=25°C Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°C see table 8 Maximum diode commutation speed dif/dt - - 500 A/µs VDS=0...400V,ISD<=IS,Tj=25°C see table 8 Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse EAS Avalanche energy, repetitive 2) 1) Limited by Tj max. Maximum duty cycle D=0.5 Pulse width tp limited by Tj,max 3) IdenticallowsideandhighsideswitchwithidenticalRG 2) Final Data Sheet 3 Rev.2.0,2016-09-07 700VCoolMOSªCEPowerTransistor IPSA70R2K0CE 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Unit Note/TestCondition Min. Typ. Max. RthJC - - 2.95 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded Soldering temperature, wavesoldering only allowed at leads - - 260 °C Final Data Sheet Tsold 4 1.6mm (0.063 in.) from case for 10s Rev.2.0,2016-09-07 700VCoolMOSªCEPowerTransistor IPSA70R2K0CE 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3.0 3.5 V VDS=VGS,ID=0.07mA - 10 1 - µA VDS=700V,VGS=0V,Tj=25°C VDS=700V,VGS=0V,Tj=150°C IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 1.80 4.68 2.00 - Ω VGS=10V,ID=1A,Tj=25°C VGS=10V,ID=1A,Tj=150°C Gate resistance RG - 6.5 - Ω f=1MHz,opendrain Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 700 - Gate threshold voltage V(GS)th 2.5 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 163 - pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 14 - pF VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related1) Co(er) - 10 - pF VGS=0V,VDS=0...480V Effective output capacitance, time related2) Co(tr) - 33 - pF ID=constant,VGS=0V,VDS=0...480V Turn-on delay time td(on) - 6.4 - ns VDD=400V,VGS=13V,ID=1.1A, RG=10.2Ω;seetable9 Rise time tr - 9 - ns VDD=400V,VGS=13V,ID=1.1A, RG=10.2Ω;seetable9 Turn-off delay time td(off) - 25 - ns VDD=400V,VGS=13V,ID=1.1A, RG=10.2Ω;seetable9 Fall time tf - 27 - ns VDD=400V,VGS=13V,ID=1.1A, RG=10.2Ω;seetable9 Unit Note/TestCondition Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 0.9 - nC VDD=480V,ID=1.1A,VGS=0to10V Gate to drain charge Qgd - 4.3 - nC VDD=480V,ID=1.1A,VGS=0to10V Gate charge total Qg - 7.8 - nC VDD=480V,ID=1.1A,VGS=0to10V Gate plateau voltage Vplateau - 5.4 - V VDD=480V,ID=1.1A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to480V Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to480V 2) Final Data Sheet 5 Rev.2.0,2016-09-07 700VCoolMOSªCEPowerTransistor IPSA70R2K0CE Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=1.1A,Tj=25°C 187 - ns VR=400V,IF=1.1A,diF/dt=100A/µs; see table 8 - 0.8 - µC VR=400V,IF=1.1A,diF/dt=100A/µs; see table 8 - 7 - A VR=400V,IF=1.1A,diF/dt=100A/µs; see table 8 Min. Typ. Max. VSD - 0.9 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 6 Rev.2.0,2016-09-07 700VCoolMOSªCEPowerTransistor IPSA70R2K0CE 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea 101 45 1 µs 40 10 µs 100 µs 35 100 1 ms DC 25 ID[A] Ptot[W] 30 20 10-1 15 10-2 10 5 0 0 25 50 75 100 125 10-3 150 100 101 TC[°C] 102 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 1 101 10 1 µs 10 µs 100 µs 100 1 ms 0.5 ZthJC[K/W] ID[A] DC 10-1 100 0.2 0.1 0.05 0.02 10-2 0.01 single pulse 10-3 100 101 102 103 10-1 10-5 10-4 VDS[V] 10-2 10-1 tp[s] ID=f(VDS);TC=80°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tP);parameter:D=tp/T 7 Rev.2.0,2016-09-07 700VCoolMOSªCEPowerTransistor IPSA70R2K0CE Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 7 4 20 V 20 V 6 10 V 10 V 8V 3 5 8V 4 7V ID[A] ID[A] 7V 6V 2 3 5.5 V 6V 2 1 5V 5.5 V 1 4.5 V 5V 4.5 V 0 0 5 10 15 0 20 0 5 10 VDS[V] 15 ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 9.0 6.0 8.5 5.5 8.0 5.0 7.5 4.5 7.0 4.0 6.5 6.0 5.5V 6V 6.5V RDS(on)[Ω] RDS(on)[Ω] ID=f(VDS);Tj=25°C;parameter:VGS 5V 7V 5.5 5.0 3.5 3.0 1.5 4.0 1.0 3.5 0.5 1 2 3 4 0.0 -50 -25 0 25 ID[A] 50 75 100 125 150 Tj[°C] RDS(on)=f(ID);Tj=125°C;parameter:VGS Final Data Sheet typ 2.0 10 V 0 98% 2.5 4.5 3.0 20 VDS[V] RDS(on)=f(Tj);ID=1.0A;VGS=10V 8 Rev.2.0,2016-09-07 700VCoolMOSªCEPowerTransistor IPSA70R2K0CE Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 7 10 9 25 °C 6 8 5 120 V 7 480 V 6 ID[A] VGS[V] 4 3 150 °C 5 4 3 2 2 1 1 0 0 2 4 6 8 10 0 12 0 1 2 3 VGS[V] 4 5 6 7 8 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=1.1Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy 2 10 12 25 °C 125 °C 11 10 9 101 IF[A] EAS[mJ] 8 100 7 6 5 4 3 2 1 10-1 0.0 0.5 1.0 1.5 2.0 0 25 50 VSD[V] 100 125 150 Tj[°C] IF=f(VSD);parameter:Tj Final Data Sheet 75 EAS=f(Tj);ID=0.5A;VDD=50V 9 Rev.2.0,2016-09-07 700VCoolMOSªCEPowerTransistor IPSA70R2K0CE Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances 104 790 770 103 750 Ciss C[pF] VBR(DSS)[V] 730 710 102 690 Coss 101 670 650 Crss 630 -75 -50 -25 0 25 50 75 100 125 150 175 100 0 100 Tj[°C] 200 300 400 500 VDS[V] VBR(DSS)=f(Tj);ID=1.0mA C=f(VDS);VGS=0V;f=1MHz Diagram15:Typ.Cossstoredenergy 1.30 1.20 1.10 1.00 0.90 Eoss[µJ] 0.80 0.70 0.60 0.50 0.40 0.30 0.20 0.10 0.00 0 100 200 300 400 500 VDS[V] Eoss=f(VDS) Final Data Sheet 10 Rev.2.0,2016-09-07 700VCoolMOSªCEPowerTransistor IPSA70R2K0CE 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform V ,I Rg1 VDS( peak) VDS VDS VDS trr IF Rg 2 tF tS dIF / dt IF QF IF dIrr / dt trr =tF +tS Qrr = QF + QS Irrm Rg1 = Rg 2 t 10 %Irrm QS Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 11 ID VDS Rev.2.0,2016-09-07 700VCoolMOSªCEPowerTransistor IPSA70R2K0CE 6PackageOutlines Figure1OutlinePG-TO251,dimensionsinmm/inches Final Data Sheet 12 Rev.2.0,2016-09-07 700VCoolMOSªCEPowerTransistor IPSA70R2K0CE 7AppendixA Table11RelatedLinks • IFXCoolMOSTMCEWebpage:www.infineon.com • IFXCoolMOSTMCEapplicationnote:www.infineon.com • IFXCoolMOSTMCEsimulationmodel:www.infineon.com • IFXDesigntools:www.infineon.com Final Data Sheet 13 Rev.2.0,2016-09-07 700VCoolMOSªCEPowerTransistor IPSA70R2K0CE RevisionHistory IPSA70R2K0CE Revision:2016-09-07,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2016-09-07 Release of final version TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 14 Rev.2.0,2016-09-07