Sanyo ECH8411 N-channel silicon mosfet general-purpose switching device Datasheet

ECH8411
Ordering number : ENA0073
N-Channel Silicon MOSFET
ECH8411
General-Purpose Switching Device
Applications
Features
•
•
Ultrahigh-speed switching.
1.8V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
20
Gate-to-Source Voltage
VGSS
±12
V
9
A
Drain Current (DC)
ID
Drain Current (Pulse)
IDP
PD
Allowable Power Dissipation
V
PW≤10µs, duty cycle≤1%
36
A
Mounted on a ceramic board (900mm2✕0.8mm)
1.4
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Ratings
min
typ
Unit
max
ID=1mA, VGS=0V
VDS=20V, VGS=0V
VGS=±8V, VDS=0V
20
IDSS
IGSS
VDS=10V, ID=1mA
VDS=10V, ID=4A
0.5
Forward Transfer Admittance
VGS(off)
yfs
RDS(on)1
RDS(on)2
ID=4A, VGS=4V
ID=2A, VGS=2.5V
12
16
mΩ
Static Drain-to-Source On-State Resistance
16
23
mΩ
ID=2A, VGS=1.8V
VDS=10V, f=1MHz
25
36
mΩ
Input Capacitance
RDS(on)3
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
VDS=10V, f=1MHz
Turn-ON Delay Time
td(on)
tr
td(off)
tf
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Rise Time
Turn-OFF Delay Time
Fall Time
V(BR)DSS
Conditions
V
1
±10
7
1.3
12
µA
µA
V
S
1740
pF
310
pF
290
pF
See specified Test Circuit.
30
ns
See specified Test Circuit.
170
ns
See specified Test Circuit.
240
ns
See specified Test Circuit.
210
ns
Marking : KR
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
83005PE MS IM TB-00001772 No. A0073-1/4
ECH8411
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
Total Gate Charge
Qg
VDS=10V, VGS=4V, ID=9A
21
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=4V, ID=9A
3.5
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=4V, ID=9A
Diode Forward Voltage
VSD
IS=9A, VGS=0V
Package Dimensions
unit : mm
7011-002
6.2
0.84
8
7
6
5
0.25
2.3
5
1
2
3
4
0.15
2.8
0.3
V
Electrical Connection
Top View
8
nC
1.2
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
Top view
1
0.25
4
0.65
2.9
0.07
0.9
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : ECH8
Bottom View
Switching Time Test Circuit
VDD=10V
4V
0V
VIN
ID=4A
RL=2.5Ω
VIN
VOUT
D
PW=10µs
D.C.≤1%
G
P.G
50Ω
S
ECH8411
No. A0073-2/4
ECH8411
ID -- VDS
13
12
2
7
6
5
4
--25°C
3
8
Ta=7
5°C
4
9
C
5
11
10
25°
4.0V
1.5V
V GS=
Drain Current, ID -- A
6
VDS=10V
14
1 .8 V
7.0V
Drain Current, ID -- A
7
2.5V
8
ID -- VGS
15
3.0V
5.0V
9
3
2
1
1
0
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Drain-to-Source Voltage, VDS -- V
1.0
0
1.0
1.5
2.0
2.5
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
50
0.5
IT10031
IT10032
RDS(on) -- Ta
40
35
ID=2A
4A
25
20
15
10
5
0
2
4
6
10
7
5
°C
-25
=
Ta
2
1.0
7
75
°C
25
°C
5
2
2
3
5 7 0.1
2
3
5 7 1.0
2
3
--40
--20
0
20
40
60
80
100
120
140
160
IT10034
IS -- VSD
VGS=0V
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0
5 7 10
IT10035
Drain Current, ID -- A
0.2
0.6
0.8
1.0
1.2
IT10036
Ciss, Coss, Crss -- VDS
7
VDD=10V
VGS=4V
5
0.4
Diode Forward Voltage, VSD -- V
SW Time -- ID
7
f=1MHz
5
3
3
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
5
0.01
7
5
3
2
0.001
3
0.1
0.01
10
3
2
VDS=10V
3
15
Ambient Temperature, Ta -- °C
Source Current, IS -- A
Forward Transfer Admittance, yfs -- S
2
A
I =2
2.5V, D
V GS=
4A
.0V, I D=
V GS=4
20
IT10033
yfs -- ID
3
25
0
--60
8
Gate-to-Source Voltage, VGS -- V
A
I =2
1.8V, D
V GS=
5°C
25°C
0
30
Ta=
7
30
35
C
40
--25°
45
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Ta=25°C
td (off)
2
tf
100
tr
7
5
td(on)
3
2
0.1
Ciss
2
1000
7
5
Coss
Crss
3
2
100
2
3
5
7
1.0
2
Drain Current, ID -- A
3
5
7
10
IT10037
0
2
4
6
8
10
12
14
16
Drain-to-Source Voltage, VDS -- V
18
20
IT10038
No. A0073-3/4
ECH8411
VGS -- Qg
100
7
5
VDS=10V
ID=9A
3.5
3
2
3.0
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
4.0
2.5
2.0
1.5
1.0
0.5
0
0
2
4
6
8
10
12
14
16
18
20
Total Gate Charge, Qg -- nC
IT10039
PD -- Ta
1.6
Allowable Power Dissipation, PD -- W
22
10
7
5
3
2
ASO
1m
s
ID=9A
10
ms
10
DC
0m
s
op
era
1.0
7
5
3
2
0.1
7
5
3
2
≤10µs
IDP=36A
Operation in this
area is limited by RDS(on).
tio
n
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm2✕0.8mm)
0.01
0.01
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
Drain-to-Source Voltage, VDS -- V
2 3
5
IT10111
1.4
M
ou
1.2
nt
ed
1.0
on
ac
er
am
ic
0.8
bo
ar
0.6
d
(9
00
m
0.4
m2
✕
0.
8m
m
)
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT10112
Note on usage : Since the ECH8411 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of August, 2005. Specifications and information herein are subject
to change without notice.
PS No. A0073-4/4
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