Seme LAB BSS71 Silicon planar epitaxial npn transistor Datasheet

SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
BSS71
•
High Voltage
•
Hermetic TO-18 Metal package.
•
Ideally suited for High Voltage Amplifier
and Switching Applications
•
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
PD
TJ
Tstg
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
TA = 25°C
Total Power Dissipation at
Derate Above 25°C
Junction Temperature Range
Storage Temperature Range
200V
200V
6V
500mA
500mW
2.86mW/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
Parameters
RθJA
Thermal Resistance, Junction To Ambient
Min.
Typ.
Max.
Units
350
°C/W
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Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 8576
Issue 1
Page 1 of 3
SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
BSS71
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
IC = 10mA
IB = 0
200
IC = 100µA
IE = 0
200
V(BR)EBO
Collector-Emitter
Breakdown Voltage
Collector-Base
Breakdown Voltage
Emitter-Base Breakdown
Voltage
IE = 100µA
IC = 0
6
ICBO
Collector Cut-Off Current
VCB = 150V
IE = 0
50
ICEO
Collector Cut-Off Current
VCE = 150V
IB = 0
500
IEBO
Emitter Cut-Off Current
VEB = 5V
IC = 0
50
IC = 0.1mA
VCE = 1.0V
20
IC = 1.0mA
VCE = 10V
30
IC = 10mA
VCE = 10V
50
IC = 30mA
VCE = 10V
40
IC = 10mA
IB = 1.0mA
0.3
IC = 30mA
IB = 3mA
0.4
IC = 50mA
IB = 5mA
0.5
IC = 10mA
IB = 1.0mA
0.8
IC = 30mA
IB = 3mA
0.9
IC = 50mA
IB = 5mA
1.0
IC = 20mA
VCE = 20V
(1)
V(BR)CEO
V(BR)CBO
hFE
Forward-current transfer
ratio
(1)
(1)
VCE(sat)
VBE(sat)
(1)
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
Min.
Typ
Max.
Units
V
nA
250
V
DYNAMIC CHARACTERISTICS
fT
Transition Frequency
Cobo
Output Capacitance
200
VCB = 20V
IE = 0
MHz
3.5
f = 1.0MHz
Cibo
Input Capacitance
ton
Turn-On Time
toff
50
f = 20MHz
VEB = 0.5V
pF
IC = 0
45
f = 1.0MHz
Turn-Off Time
IC = 50mA
VCC = 100V
IB1 = 10mA
IC = 50mA
VCC = 100V
IB1 = - IB2 = 10mA
100
ns
400
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 8576
Issue 1
Page 2 of 3
SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
BSS71
MECHANICAL DATA
Dimensions in mm (inches)
5.84 (0.230)
5.31 (0.209)
12.7 (0.500)
min.
5.33 (0.210)
4.32 (0.170)
4.95 (0.195)
4.52 (0.178)
0.48 (0.019)
0.41 (0.016)
dia.
2.54 (0.100)
Nom.
3
1
2
TO-18 (TO-206AA) METAL PACKAGE
Underside View
Pin 1 - Emitter
Pin 2 - Base
Pin 3 - Collector
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 8576
Issue 1
Page 3 of 3
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