AOSMD AOL1440 N-channel enhancement mode field effect transistor Datasheet

AOL1440
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
Features
The AOL1440 uses advanced trench technology to
provide excellent RDS(ON), shoot-through immunity
and body diode characteristics. This device is ideally
suited for use as a low side switch in CPU core
power conversion. Standard Product AOL1440 is
Pb-free (meets ROHS & Sony 259 specifications).
AOL1440L is a Green Product ordering option.
AOL1440 and AOL1440L are electrically identical.
VVDS
(V)==25V
25V
DS (V)
75A(V
(VGS
10V)
IIDD ==75A
GS == 10V)
<
<
3.2mΩ
3.2mΩ
(V
(VGS
20V)
RRDS(ON)
DS(ON)
GS == 20V)
4.0mW(V
(VGS
10V)
RRDS(ON)
DS(ON) << 4.0mΩ
GS==12V)
5.2mW(V
(VGS
12V)
RRDS(ON)
DS(ON)<< 5.2mΩ
GS==10V)
Ultra SO-8TM Top View
UISTested
Tested
UIS
Rg,Ciss,Coss,CrssTested
Tested
Rg,Ciss,Coss,Crss
Fits SOIC8
footprint !
D
D
S
Bottom tab
connected to
drain
G
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
25
VDS
±30
Gate-Source Voltage
VGS
Continuous Drain
Current B,G,
Pulsed Drain Current
Continuous Drain
G
Current
TC=25°C
G
TC=100°C
Units
V
V
85
B
A
IDSM
66
200
25
20
IAR
30
A
135
75
37
5
3
-55 to 175
mJ
ID
IDM
TA=25°C
TA=70°C
Avalanche Current C
C
Repetitive avalanche energy L=0.3mH
EAR
TC=25°C
PD
Power Dissipation B TC=100°C
TA=25°C
PDSM
A
Power Dissipation
TA=70°C
Junction and Storage Temperature Range TJ, TSTG
Thermal Characteristics
Parameter
t ≤ 10s
Maximum Junction-to-AmbientA
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Case
Alpha & Omega Semiconductor, Ltd.
Symbol
RθJA
RθJC
Typ
19
45
1.5
A
W
W
°C
Max
25
55
2
Units
°C/W
°C/W
°C/W
www.aosmd.com
AOL1440
Electrical Characteristics (T J=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
RDS(ON)
Static Drain-Source On-Resistance
Conditions
Min
ID=250µA, VGS=0V
VDS=20V, V GS=0V
25
VDS=0V, VGS= ±30V
VDS=VGS ID=250µA
VGS=12V, V DS=5V
VGS=20V, ID=20A
VGS=12V, ID=20A
VGS=10V, ID=20A
2
200
Forward Transconductance
VDS=5V, ID=20A
Diode Forward Voltage
IS=1A,V GS=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(12V) Total Gate Charge
Qg(10V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge
Max
0.005
1
5
100
4
VGS=0V, VDS=12.5V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, V DS=12.5V, ID=20A
VGS=10V, V DS=12.5V, R L=0.68Ω,
RGEN=3Ω
IF=20A, dI/dt=100A/µs
IF=20A, dI/dt=100A/µs
Units
V
TJ=55°C
TJ=125°C
gFS
VSD
IS
Typ
3
2.7
3.5
4
5.6
75
0.7
3.2
4
5.2
2100
850
400
0.35
2400
40
33
11
14
12
19
15
8.5
42
34
50
µA
nA
V
A
mΩ
mΩ
mΩ
S
V
A
1
55
1
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev0. July 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1440
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
200
100
20V
VDS=5V
160
80
12V
10V
120
60
ID(A)
ID(A)
VGS=8V
80
40
40
20
0
0
1
2
3
4
VDS (Volts)
Figure 1: On-Region Characteristics
25°C
0
5
3
4.5
5
6
7
VGS(Volts)
Figure 2: Transfer Characteristics
ID=20A
Normalized On-Resistance
4.0
VGS=12V
3.5
3.0
VGS=20V
2.5
2.0
8
VGS=20V
1.2
VGS=12V
VGS=10V
1
VGS=10V
VGS=12V
0.8
VGS=20V
0.6
0
5
10
15
20
25
30
-50
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
-25
0
25
50
75
100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
14
1.0E+02
ID=20A
1.0E+01
12
125°C
1.0E+00
IS (A)
10
RDS(ON) (mΩ)
4
1.4
VGS=10V
RDS(ON) (mΩ)
125°C
TC=100°C
TA=25°C
125°C
8
6
1.0E-01
1.0E-02
25°C
1.0E-03
25°C
-55 to 175
4
1.0E-04
1.0E-05
2
6
8
10
12
14
16
18
20
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
www.aosmd.com
AOL1440
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3000
20
VDS=12.5V
ID=20A
Capacitance (pF)
VGS (Volts)
16
Ciss
2500
12
8
4
2000
1500
Coss
1000
Crss
500
0
0
10
0
20
30
40
50
60
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
1000.0
200
ID (Amps)
100.0
10µs
100µ
RDS(ON)
limited
Power (W)
1.0
0.1
0.0
0.01
TJ(Max)=175°C
TC=25°C
0.1
ZθJC Normalized Transient
Thermal Resistance
100
50
1
VDS (Volts)
10
100
D=Ton/T
TJ,PK=Tc+PDM.ZθJC.RθJC
RθJC=2°C/W
0
0.0001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
150
DC
10.0
TJ(Max)=175°C
TC=25°C
0.001
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
TC=100°C
TA=25°C
PD
0.1
-55 to 175
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1440
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
TA=25°C
70
80
Power Dissipation (W)
ID(A), Peak Avalanche Current
100
25°C
60
40
150°C
20
0
0.00001
60
50
40
30
20
10
0
0.0001
0.001
0
25
Time in avalanche, t A (s)
Figure 12: Single Pulse Avalanche capability
100
125
150
175
100
80
80
60
Power (W)
Current rating ID(A)
75
TCASE (°C)
Figure 13: Power De-rating (Note B)
100
40
20
60
40
20
0
0
25
50
75
100
125
150
0
0.01
175
TCASE (°C)
Figure 14: Current De-rating (Note B)
10
ZθJA Normalized Transient
Thermal Resistance
50
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=55°C/W
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
Ton
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Similar pages