PHILIPS BAS55 High-speed diode Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BAS55
High-speed diode
Product specification
Supersedes data of April 1996
File under Discrete Semiconductors, SC01
1996 Sep 10
Philips Semiconductors
Product specification
High-speed diode
BAS55
FEATURES
DESCRIPTION
• Small plastic SMD package
The BAS55 is a high-speed switching
diode fabricated in planar technology,
and encapsulated in the small
rectangular plastic SMD SOT23
package.
• High switching speed: max. 6 ns
• Continuous reverse voltage:
max. 60 V
• Repetitive peak reverse voltage:
max. 60 V
• Repetitive peak forward current:
max. 600 mA.
PINNING
handbook, halfpage
2
PIN
DESCRIPTION
1
anode
2
not connected
3
cathode
1
2
n.c.
APPLICATIONS
1
• High-speed switching in surface
mounted circuits.
3
3
MAM185
Marking code: L5p.
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
−
60
V
VR
continuous reverse voltage
−
60
V
IF
continuous forward current
−
250
mA
IFRM
repetitive peak forward current
−
600
mA
IFSM
non-repetitive peak forward current
t = 1 µs
−
9
A
t = 100 µs
−
3
A
t = 10 ms
−
1.7
A
see Fig.2; note 1
square wave; Tj = 25 °C prior to
surge; see Fig.4
Ptot
total power dissipation
−
250
Tstg
storage temperature
Tamb = 25 °C; note 1
−65
+150
°C
Tj
junction temperature
−
150
°C
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 10
2
mW
Philips Semiconductors
Product specification
High-speed diode
BAS55
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VF
forward voltage
see Fig.3; IF = 200 mA; DC value;
note 1
IR
reverse current
see Fig.5
MIN.
−
MAX.
1.0
UNIT
V
VR = 60 V
−
100
nA
VR = 60 V; Tj = 150 °C
−
100
µA
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
−
2.5
pF
trr
reverse recovery time
when switched from IF = 400 mA to
IR = 400 mA; RL = 100 Ω;
measured at IR = 40 mA; see Fig.7
−
6
ns
Vfr
forward recovery voltage
when switched to IF = 400 mA;
tr = 30 ns; see Fig.8
−
2
V
when switched to IF = 400 mA;
tr = 100 ns; see Fig.8
−
1.5
V
Note
1. Tamb = 25 °C; device has reached the thermal equilibrium when mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
thermal resistance from junction to tie-point
Rth j-a
thermal resistance from junction to ambient
CONDITIONS
note 1
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 10
3
VALUE
UNIT
330
K/W
500
K/W
Philips Semiconductors
Product specification
High-speed diode
BAS55
GRAPHICAL DATA
MBG441
300
MBH279
300
handbook, halfpage
handbook, halfpage
IF
(mA)
IF
(mA)
200
200
100
100
0
0
0
100
Tamb (oC)
200
0
2
VF (V)
Tj = 25 °C.
Device mounted on an FR4 printed-circuit board.
Fig.2
1
Maximum permissible continuous forward
current as a function of ambient temperature.
Fig.3
Forward current as a function of forward
voltage; typical values.
MBG703
102
handbook, full pagewidth
IFSM
(A)
10
1
10−1
1
10
102
103
tp (µs)
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Sep 10
4
104
Philips Semiconductors
Product specification
High-speed diode
BAS55
MBH282
102
handbook, halfpage
IR
(µA)
Cd
(pF)
10
1.5
(1)
1
MBH283
2.0
handbook, halfpage
(2)
1.0
10−1
0.5
10−2
100
0
Tj (oC)
0
0
200
(1) VR = 60 V; maximum values.
(2) VR = 60 V; typical values.
Fig.5
1996 Sep 10
10
20
VR (V)
30
f = 1 MHz; Tj = 25 °C.
Reverse current as a function of
junction temperature.
Fig.6
5
Diode capacitance as a function of reverse
voltage; typical values.
Philips Semiconductors
Product specification
High-speed diode
BAS55
handbook, full pagewidth
tr
tp
t
D.U.T.
10%
IF
RS = 50 Ω
IF
SAMPLING
OSCILLOSCOPE
t rr
t
R i = 50 Ω
V = VR I F x R S
MGA881
(1)
90%
VR
input signal
output signal
(1) IR = 40 mA.
Fig.7 Reverse recovery voltage test circuit and waveforms.
I
1 kΩ
450 Ω
V
I
90%
R = 50 Ω
S
D.U.T.
OSCILLOSCOPE
V fr
R i = 50 Ω
10%
MGA882
t
tr
input
signal
Input signal: forward pulse duration tp = 300 ns; duty factor δ = 0.01.
Fig.8 Forward recovery voltage test circuit and waveforms.
1996 Sep 10
6
t
tp
output
signal
Philips Semiconductors
Product specification
High-speed diode
BAS55
PACKAGE OUTLINE
3.0
2.8
handbook, full pagewidth
0.55
0.45
B
1.9
0.150
0.090
0.95
2
1
0.1
max
10 o
max
0.2 M A
A
1.4
1.2
2.5
max
10 o
max
3
1.1
max
0.48
0.38
30 o
max
0.1 M A B
MBC846
TOP VIEW
Dimensions in mm.
Fig.9 SOT23.
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 10
7
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