Infineon IPD06N03L Optimos buck converter sery Datasheet

IPD06N03L
OptiMOS Buck converter series
Product Summary
Feature
VDS
30
V
•Logic Level
RDS(on)
5.9
mΩ
•Low On-Resistance RDS(on)
ID
50
A
•N-Channel
•Excellent Gate Charge x R DS(on) product (FOM)
P- TO252 -3-11
•Superior thermal resistance
•175°C operating temperature
•Avalanche rated
•dv/dt rated
•Ideal for fast switching buck converter
Type
Package
Ordering Code
Marking
IPD06N03L
P- TO252 -3-11
Q67042-S4109
06N03L
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
ID
TC
Value
Unit
A
50
=25°C1)
50
ID puls
200
EAS
250
Repetitive avalanche energy, limited by T jmax2)
EAR
15
Reverse diode dv/dt
dv/dt
6
Gate source voltage
VGS
±20
V
Power dissipation
Ptot
150
W
Pulsed drain current
TC=25°C
Avalanche energy, single pulse 1)
mJ
ID=20A, V DD=25V, RGS=25Ω
kV/µs
IS=50A, VDS=24V, di/dt=200A/µs, Tjmax=175°C
TC=25°C
Operating and storage temperature
Tj , Tstg
IEC climatic category; DIN IEC 68-1
-55... +175
°C
55/175/56
Page 1
2003-01-17
IPD06N03L
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
RthJC
-
0.7
1
Thermal resistance, junction - ambient, leaded
RthJA
-
-
100
SMD version, device on PCB:
RthJA
@ min. footprint
-
-
75
@ 6 cm2 cooling area 3)
-
-
50
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)DSS
30
-
-
VGS(th)
1.2
1.6
2
Static Characteristics
Drain-source breakdown voltage
V
VGS=0V, I D=1mA
Gate threshold voltage, V GS = VDS
ID = 80 µA
Zero gate voltage drain current
µA
IDSS
VDS=30V, V GS=0V, T j=25°C
-
0.01
1
VDS=30V, V GS=0V, T j=125°C
-
10
100
IGSS
-
1
100
nA
RDS(on)
-
6.8
8.7
mΩ
RDS(on)
-
4.7
5.9
Gate-source leakage current
VGS=20V, VDS=0V
Drain-source on-state resistance
VGS=4.5V, ID=30A
Drain-source on-state resistance
VGS=10V, ID=30A
1Current limited by bondwire ; with an RthJC = 1K/W the chip is able to carry ID= 113A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2003-01-17
IPD06N03L
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
29
58
-
S
pF
Dynamic Characteristics
Transconductance
gfs
VDS≥2*ID*RDS(on)max,
ID=30A
Input capacitance
Ciss
VGS=0V, VDS =25V,
-
1900
2530
Output capacitance
Coss
f=1MHz
-
740
990
Reverse transfer capacitance
Crss
-
180
270
Turn-on delay time
td(on)
VDD=15V, VGS=10V,
-
7.3
11
Rise time
tr
ID=25A,
-
19
29
-
34
50
-
20.5
30.7
-
6.3
8.4
-
12.3
16.4
-
25.8
34.3
-
35.5
31.9
Turn-off delay time
td(off)
Fall time
tf
RG =3.6Ω
ns
Gate Charge Characteristics
Gate to source charge
Qgs
Gate to drain charge
Qgd
Gate charge total
Qg
VDD=15V, ID=25A
VDD=15V, ID=25A,
nC
VGS=0 to 5V
Output charge
Qoss
VDS=15V, ID =25A,
nC
VGS=0V
Gate plateau voltage
V(plateau)
VDD=15V, ID=25A
-
3.1
-
V
IS
TC=25°C
-
-
50
A
-
-
200
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed
I SM
Inverse diode forward voltage
VSD
VGS =0V, IF =50A
-
0.9
1.2
V
Reverse recovery time
t rr
VR =15V, IF =lS ,
-
41
51
ns
Reverse recovery charge
Q rr
diF /dt=100A/µs
-
46
58
nC
Page 3
2003-01-17
IPD06N03L
1 Power dissipation
2 Drain current
Ptot = f (TC)
I D = f (TC)
parameter: VGS≥ 10 V
160
IPD06N03L
55
IPD06N03L
A
W
45
40
ID
Ptot
120
100
35
30
80
25
60
20
15
40
10
20
5
0
0
20
40
60
80
0
0
100 120 140 160 °C 190
20
40
60
80
100 120 140 160 °C 190
TC
TC
3 Safe operating area
4 Max. transient thermal impedance
I D = f ( VDS )
Z thJC = f (tp)
parameter : D = 0 , T C = 25 °C
parameter : D = tp/T
10 3
10 1
IPD06N03L
IPD06N03L
K/W
A
10 0
DS
/I
D
tp = 7.6µs
DS
(on
)
R
ID
10 2
Z thJC
=
V
10 µs
10 -1
100 µs
D = 0.50
10
10
-2
0.20
1 ms
1
0.10
0.05
10 ms
DC
10 -3
0.02
single pulse
0.01
10 0 -1
10
10
0
10
1
V
10
2
10 -4 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
tp
VDS
Page 4
2003-01-17
10
0
IPD06N03L
5 Typ. output characteristic
6 Typ. drain-source on resistance
I D = f (VDS); Tj=25°C
parameter: t p = 80 µs
RDS(on) = f (ID)
120
parameter: VGS
IPD06N03L
19
Ptot = 150W
IPD06N03L
Ω
A
VGS [V]
a
2.6
h
b
2.8
c
3.0
d
3.2
e
3.4
f
3.6
g
3.8
f h
4.5
90
ID
80
g
70
60
i
50
e
f
g
16
RDS(on)
i
100
d
14
12
10
10.0
8
h
e
40
6
30
i
d
4
20
c
2
b
10
a
0
0
0.5
1
1.5
2
2.5
3
3.5
4
V
0
0
5
VGS [V] =
d
3.2
e
f
3.4 3.6
10
20
g
3.8
30
h
i
4.5 10.0
40
50
60
70 A
85
ID
VDS
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D= f ( VGS ); V DS≥ 2 x ID x R DS(on)max
gfs = f(ID); Tj=25°C
parameter: t p = 80 µs
parameter: gfs
90
60
A
S
50
70
40
g fs
ID
45
35
60
50
30
40
25
30
20
15
20
10
10
5
0
0
0.5
1
1.5
2
2.5
3
4
V
VGS
Page 5
0
0
20
40
60
80
100
A 130
ID
2003-01-17
IPD06N03L
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
RDS(on) = f (Tj)
VGS(th) = f (Tj)
parameter : ID = 30 A, V GS = 10 V
parameter: VGS = VDS
IPD06N03L
14
2.5
12
V
Ω
1mA
VGS(th)
RDS(on)
11
10
9
1.5
8
7
98%
6
85µA
1
typ
5
4
3
0.5
2
1
0
-60
-20
20
60
100
140
°C
0
-60
200
-20
20
60
100
Tj
180
°C
Tj
11 Typ. capacitances
12 Forward character. of reverse diode
C = f (VDS)
IF = f (VSD )
parameter: VGS=0V, f=1 MHz
parameter: Tj , tp = 80 µs
10 4
10 3
IPD06N03L
A
pF
Ciss
C
IF
10 2
Coss
10 3
10 1
Tj = 25 °C typ
Tj = 175 °C typ
Crss
Tj = 25 °C (98%)
Tj = 175 °C (98%)
10 2
0
5
10
15
20
V
30
10 0
0
0.4
0.8
1.2
1.6
2
2.4 V
VSD
VDS
Page 6
2003-01-17
3
IPD06N03L
13 Typ. avalanche energy
15 Drain-source breakdown voltage
EAS = f (T j)
V(BR)DSS = f (Tj)
par.: I D = 20 A, V DD = 25 V, R GS = 25 Ω
parameter: I D=10 mA
260
36
IPD06N03L
mJ
V
220
V(BR)DSS
E AS
200
180
160
34
33
140
32
120
31
100
30
80
60
29
40
28
20
0
25
45
65
85
105
125
145
°C 185
Tj
27
-60
-20
20
60
100
140
°C
Tj
14 Typ. gate charge
VGS = f (Q Gate)
parameter: I D = 25 A pulsed
16
IPD06N03L
V
V GS
12
10
8
0.2 VDS max
0.5 VDS max
6 0.8 VDS max
4
2
0
0
10
20
30
40
50
60 nC
75
Q Gate
Page 7
2003-01-17
200
IPD06N03L
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Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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regarding circuits, descriptions and charts stated herein.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
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Page 8
2003-01-17
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