Fairchild FMMT551 Sot23 pnp silicon planar medium power transistor Datasheet

SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
FMMT551
ISSUE 3 - OCTOBER 1995
FEATURES
* 60 Volt VCEO
* 1 Amp continuous current
TYPICAL CHARACTERISTICS
100
- Normalised Gain (%)
- (Volts)
-0.8
-0.6
-0.4
-0.2
0
-0.01
-0.1
-1
-10
COMPLEMENTARY TYPE –
PARTMARKING DETAIL –
60
ABSOLUTE MAXIMUM RATINGS.
20
-0.1
-1
IC - Collector Current (Amps)
VCE(sat) v IC
hFE v IC
-10
-1.0
- (Volts)
- (Volts)
-0.01
IC - Collector Current (Amps)
-1.2
-0.9
-0.6
V
-0.8
-0.01
-0.1
-1
VALUE
UNIT
VCBO
-80
V
Collector-Emitter Voltage
VCEO
-60
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-2
A
Continuous Collector Current
IC
-1
A
Base Current
IB
-200
mA
500
mW
-55 to +200
°C
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
PARAMETER
SYMBOL
MIN.
-0.7
Collector-Base
Breakdown Voltage
V(BR)CBO
Collector-Emitter
Sustaining Voltage
-0.01
-0.1
-1
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VBE(on) v IC
VBE(sat) v IC
-10
10
1
DC
1s
100ms
10ms
1ms
100µs
0.1
0.01
0.1V
1V
10V
VCE - Collector Emitter Voltage (V)
Safe Operating Area
3 - 130
SYMBOL
Collector-Base Voltage
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
-0.6
-10
PARAMETER
-0.8
V
-1.0
B
FMMT451
551
40
-0.001
-1.4
E
C
80
h
V
IC/IB=10
FMMT551
100V
MAX.
UNIT
CONDITIONS.
-80
V
IC=-100µ A
VCEO(sus)
-60
V
IC=-10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO
-5
V
IE=-100µ A
Collector Cut-Off Current
I CBO
-0.1
µA
VCB=-60V
Emitter Cut-Off Current
IEBO
-0.1
µA
VEB=-4V
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.35
V
IC=-150mA, IB=-15mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-1.1
V
IC=-150mA, IB=-15mA*
Static Forward Current
Transfer Ratio
hFE
50
10
Transition
Frequency
fT
150
Output Capacitance
Cobo
150
25
IC=-150mA, VCE=-10V*
IC=-1A, VCE=-10V*
MHz
IC=-50mA, VCE=-10V
f=100MHz
pF
VCB=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
3 - 129
SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
FMMT551
ISSUE 3 - OCTOBER 1995
FEATURES
* 60 Volt VCEO
* 1 Amp continuous current
TYPICAL CHARACTERISTICS
100
- Normalised Gain (%)
- (Volts)
-0.8
-0.6
-0.4
-0.2
0
-0.01
-0.1
-1
-10
COMPLEMENTARY TYPE –
PARTMARKING DETAIL –
60
ABSOLUTE MAXIMUM RATINGS.
20
-0.1
-1
IC - Collector Current (Amps)
VCE(sat) v IC
hFE v IC
-10
-1.0
- (Volts)
- (Volts)
-0.01
IC - Collector Current (Amps)
-1.2
-0.9
-0.6
V
-0.8
-0.01
-0.1
-1
VALUE
UNIT
VCBO
-80
V
Collector-Emitter Voltage
VCEO
-60
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-2
A
Continuous Collector Current
IC
-1
A
Base Current
IB
-200
mA
500
mW
-55 to +200
°C
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
PARAMETER
SYMBOL
MIN.
-0.7
Collector-Base
Breakdown Voltage
V(BR)CBO
Collector-Emitter
Sustaining Voltage
-0.01
-0.1
-1
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VBE(on) v IC
VBE(sat) v IC
-10
10
1
DC
1s
100ms
10ms
1ms
100µs
0.1
0.01
0.1V
1V
10V
VCE - Collector Emitter Voltage (V)
Safe Operating Area
3 - 130
SYMBOL
Collector-Base Voltage
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
-0.6
-10
PARAMETER
-0.8
V
-1.0
B
FMMT451
551
40
-0.001
-1.4
E
C
80
h
V
IC/IB=10
FMMT551
100V
MAX.
UNIT
CONDITIONS.
-80
V
IC=-100µ A
VCEO(sus)
-60
V
IC=-10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO
-5
V
IE=-100µ A
Collector Cut-Off Current
I CBO
-0.1
µA
VCB=-60V
Emitter Cut-Off Current
IEBO
-0.1
µA
VEB=-4V
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.35
V
IC=-150mA, IB=-15mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-1.1
V
IC=-150mA, IB=-15mA*
Static Forward Current
Transfer Ratio
hFE
50
10
Transition
Frequency
fT
150
Output Capacitance
Cobo
150
25
IC=-150mA, VCE=-10V*
IC=-1A, VCE=-10V*
MHz
IC=-50mA, VCE=-10V
f=100MHz
pF
VCB=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
3 - 129
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