MOSFET IC SMD Type N-Channel Enhancement MOSFET AO3404 (KO3404) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 28 m (VGS = 10V) RDS(ON) 43 m (VGS = 4.5V) 1 D 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 +0.05 0.1 -0.01 0-0.1 G S +0.1 0.38 -0.1 +0.1 0.97 -0.1 RDS(ON) 0.55 ID =5.8 A (VGS=10V) +0.1 1.3 -0.1 +0.1 2.4 -0.1 0.4 3 VDS (V) = 30V 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Ta=25℃ Ta=100℃ Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range ID IDM Ta=25℃ Ta=70℃ t ≤ 5sec Steady State PD RthJA Unit V 5.8 4.9 A 20 1.4 1 W 90 125 RthJL 60 TJ 150 Tstg -55 to 150 ℃/W ℃ www.kexin.com.cn 1 MOSFET IC SMD Type N-Channel Enhancement MOSFET AO3404 (KO3404) Electrical Characteristics Ta = 25 Parameter Symbol Testconditions Min VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS VDS=0V, VGS= 20V Gate Threshold Voltage VGS(th) VDS=VGS ID=250 A 1 On state drain current ID(ON) VGS=4.5V, VDS=5V 20 ID=250 A, VGS=0V RDS(ON) VDS=24V, VGS=0V ,TJ=55 5 VGS=10V, ID=5.8A TJ=125 Forward Transconductance gFS VDS=5V, ID=5.8A Diode Forward Voltage VSD IS=1A Maximum Body-Diode Continuous Current 1.9 Gate resistance Coss Input Capacitance Crss Output Capacitance Rg VGS=0V, VDS=15V, f=1MHz 100 nA 3 V 22.5 28 31.3 38 34.5 43 14.5 m m S 0.76 1 2.5 A 680 820 pF 102 3 V pF 77 VGS=0V, VDS=0V, f=1MHz A A IS Ciss pF 3.6 Total Gate Charge (10V) Qg 13.88 17 nC Total Gate Charge (4.5V) Qg 6.78 8.1 nC Gate Source Charge Qgs VGS=10V, VDS=15V, ID=5.8A 1.8 nC Gate Drain Charge Qgd 3.12 Turn-On Rise Time tD(on) 4.6 6.5 ns Turn-Off DelayTime tr 3.8 5.7 ns Turn-Off Fall Time tD(off) VGS=10V, VDS=15V, RL=2.7 ,RGEN=3 Turn-On DelayTime tf Body Diode Reverse Recovery Time trr IF=5.8A, dI/dt=100A/ Body Diode Reverse Recovery Charge Qrr IF=5.8A, dI/dt=100A/ Marking Marking 2 10 Unit V 1 VGS=4.5V, ID=5.0A Reverse Transfer Capacitance Max VDS=24V, VGS=0V VGS=10V, ID=5.8A Static Drain-Source On-Resistance Typ 30 Drain-Source Breakdown Voltage A4* www.kexin.com.cn nC 20.9 30 ns 5 7.5 ns s 16.1 21 ns s 7.4 10 nC MOSFET SMD Type N-Channel Enhancement MOSFET AO3404 (KO3404) ■ Typical Characterisitics 10V 25 20 6V 5V 4.5V ID (A) 20 15 3.5V 10 12 8 125°C 4 VGS=3V 5 VDS=5V 16 4V ID(A) 30 25°C 0 0 0 1 2 3 4 0 5 0.5 60 Normalized On-Resistance (Ω) RDS(ON) (mΩ) 1.5 2 2.5 3 3.5 4 4.5 1.6 50 VGS=4.5V 40 30 20 VGS=10V 10 0 5 10 15 VGS=10V ID=5A 1.5 1.4 VGS=4.5V 1.3 1.2 1.1 1 0.9 0.8 20 0 ID (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 100 150 200 Temperature ( °C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 70 60 1.0E+00 ID=5A 50 IS Amps RDS(ON) (mΩ) 1 VGS (Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 125°C 40 1.0E-01 1.0E-02 125°C 1.0E-03 30 20 25°C 1.0E-04 25°C 1.0E-05 10 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 10 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body diode characteristics www.kexin.com.cn 3 MOSFET SMD Type N-Channel Enhancement MOSFET AO3404 (KO3404) ■ Typical Characterisitics 10 f=1MHz VGS=0V 900 800 Capacitance (pF) 8 VGS (Volts) 1000 VDS=15V ID=5.8A 6 4 2 700 Ciss 600 500 400 300 200 Coss 100 0 0 2 4 6 8 10 12 Crss 0 14 0 Qg (nC) Figure 7: Gate-Charge characteristics 100 10ms 1s DC 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased. Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=T on/T TJ,PK=T A+PDM.ZθJA.RθJA RθJA=90°C/W 30 20 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 4 25 10 10s 0.1 20 TJ(Max)=150°C TA=25°C 30 100µs 10µs 0.1s 1 15 40 Power W ID (Amps) 1ms 10 10 VDS (Volts) Figure 8: Capacitance Characteristics TJ(Max)=150°C TA=25°C RDS(ON) limited 5 0.0001 www.kexin.com.cn 0.001 0.01 T 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 100 1000