Fairchild FJC1963 Npn epitaxial silicon transistor Datasheet

FJC1963
NPN Epitaxial Silicon Transistor
Audio Power Amplifier Applications
• Complement to FJC1308
• High Collector Current
• Low Collector-Emitter Saturation Voltage
Marking
1 9
6 3
P Y
W W
SOT-89
1
Weekly code
Year code
hFE grage
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings
Symbol
TC = 25°C unless otherwise noted
Parameter
Value
Units
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
30
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current (DC)
PC
Power Dissipation(TC=25°C)
TJ
TSTG
3
A
0.5
W
Junction Temperature
150
°C
Storage Temperature
- 55 ~ 150
°C
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Test Condition
Min.
Max.
Units
BVCBO
Collector-Base Breakdown Voltage
IC = 50µA, IE = 0
50
V
BVCEO
Collector-Emitter Breakdown Voltage
IC = 1mA, IB = 0
30
V
6
BVEBO
Emitter-Base Breakdown Voltage
IE = 50µA, IC = 0
ICEO
Collector Cut-off Current
VCE = 40V, VB = 0
IEBO
Emitter Cut-off Current
VEB = 5V, IC = 0
hFE
DC Current Gain
VCE = 2V, IC = 0.5A
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 1.5, IB = 0.15A
0.45
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 1.5, IB = 0.15A
1.2
V
©2005 Fairchild Semiconductor Corporation
FJC1963 Rev. B1
1
120
V
0.5
µA
0.5
µA
560
www.fairchildsemi.com
FJC1963 NPN Epitaxial Silicon Transistor
July 2005
Classification
Q
R
S
hFE
120 ~ 270
180 ~ 390
280 ~ 560
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
1963
FJC1963
SOT-89
13”
--
4,000
FJC1963 Rev. B1
2
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FJC1963 NPN Epitaxial Silicon Transistor
hFE Classification
Figure 1. Static Characteristic
Figure 2. DC Current Gain
1400
1000
VCE = 2V
IB = 6mA
1000
hFE, DC CURRENT GAIN
IC [mA], COLLECTOR CURRENT
IB = 7mA
1200
IB = 5mA
800
IB = 4mA
600
IB = 3mA
400
IB = 2mA
o
Ta = 125 C
o
Ta = 25 C
100
o
Ta = - 40 C
200
IB = 1mA
0
0
2
4
6
8
10
12
10
10m
14
100m
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 4. Base-Emitter Saturation Voltage
10
IC = 10IB
1
o
Ta = 125 C
100m
o
Ta = 25 C
o
Ta = - 40 C
10m
1m
10m
100m
1
IC = 10IB
VBE(sat) [V], SATURATION VOLTAGE
VCE(sat) [V], SATURATION VOLTAGE
10
1
o
Ta = - 40 C
o
Ta = 25 C
o
Ta = 125 C
100m
10m
10
100m
IC [A], COLLECTOR CURRENT
10
Figure 6. Power Derating
0.7
PC [W], COLLECTOR POWER DISSIPATION
1.8
VCE = 2V
1.6
IC [A], COLLECTOR CURRENT
1
IC [A], COLLECTOR CURRENT
Figure 5. Base-Emitter On Voltage
1.4
1.2
1.0
0.8
0.6
0.4
o
125 C
0.2
0.2
0.4
o
o
25 C
0.6
- 40 C
0.8
1.0
1.2
1.4
VBE [V], BASE-EMITTER VOLTAGE
FJC1963 Rev. B1
10
IC [A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
0.0
0.0
1
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
25
50
75
100
125
150
175
o
Ta [ C], AMIBIENT TEMPERATURE
3
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FJC1963 NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
FJC1963 NPN Epitaxial Silicon Transistor
Mechanical Dimensions
SOT-89
1.50 ±0.20
4.50 ±0.20
(0.40)
4.10
(1.10)
2.50
±0.20
C0.2
±0.20
(0.50)
1.65 ±0.10
0.50 ±0.10
0.40 ±0.10
0.40
+0.10
–0.05
1.50 TYP 1.50 TYP
Dimensions in Millimeters
FJC1963 Rev. B1
4
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
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This datasheet contains final specifications. Fairchild
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any time without notice in order to improve design.
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Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I16
5
FJC1963 Rev. B1
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FJC1963 NPN Epitaxial Silicon Transistor
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