DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BAV99S High-speed switching diode array Product specification Supersedes data of 2001 Mar 02 2001 May 14 Philips Semiconductors Product specification High-speed switching diode array BAV99S FEATURES PINNING • Small plastic SMD package PIN DESCRIPTION • High switching speed 1 anode (a1) • Two electrically isolated series configuration arrays 2 cathode (k2) • Low capacitance. 3 cathode (k3)/anode (a4) 4 anode (a3) APPLICATIONS 5 cathode (k4) • General purpose switching in e.g. surface mounted circuits. 6 cathode (k1)/anode (a2) • Rail to rail (ESD) protection. 6 5 4 DESCRIPTION The BAV99S consists of four single die high speed switching diodes in two electrically isolated series configurations, encapsulated in the small SMD SC-88 (SOT363) plastic package. 1 2 Top view 3 6 5 4 1 2 3 MBL211 MSA370 Marking code: K1. Fig.1 Simplified outline (SC-88; SOT363) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VRRM repetitive peak reverse voltage − 85 V VR continuous reverse voltage − 75 V IF continuous forward current − 200 mA IFRM repetitive peak forward current − 450 mA IFSM non-repetitive peak forward current t = 1 µs − 4.5 A t = 1 ms − 1 A t=1s − 0.5 A − 250 mW square wave; Tj = 25 °C prior to surge; see Fig.4 Ts ≤ 85 °C; note 1 Ptot total power dissipation Tstg storage temperature −65 +150 °C Tj junction temperature −65 +150 °C Note 1. Solder points at pins: 2, 3, 5 and 6. 2001 May 14 2 Philips Semiconductors Product specification High-speed switching diode array BAV99S ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT Per diode VF IR forward voltage see Fig.3 reverse current IF = 1 mA 715 mV IF = 10 mA 855 mV IF = 50 mA 1 V IF = 150 mA 1.25 V VR = 75 V 1 µA VR = 25 V; Tj = 150 °C 30 µA see Fig.5 VR = 75 V; Tj = 150 °C 50 µA Cd diode capacitance VR = 0; f = 1 MHz; see Fig.6 1.5 pF trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 4 ns Vfr forward recovery voltage when switched to IF = 10 mA; tr = 20 ns; see Fig.8 1.75 V THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point Note 1. Solder points at pins: 2, 3, 5 and 6. 2001 May 14 3 note 1 VALUE UNIT ≤260 K/W Philips Semiconductors Product specification High-speed switching diode array BAV99S GRAPHICAL DATA MGW102 250 MBG382 300 handbook, halfpage handbook, halfpage I Fmax IF (mA) (mA) 200 (1) (2) (3) 200 150 100 100 50 0 0 0 50 100 Ts (°C) 150 0 1 2 VF (V) (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Fig.2 Maximum permissible continuous forward current as a function of soldering point temperature. Fig.3 Forward current as a function of forward voltage. MGW103 10 handbook, full pagewidth I FSM (A) 1 10 −1 1 10 102 103 t p (µs) Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 2001 May 14 4 104 Philips Semiconductors Product specification High-speed switching diode array BAV99S MGA884 105 IR (nA) 10 Cd (pF) V R = 75 V 4 0.6 max 103 10 MBG446 0.8 handbook, halfpage 75 V 0.4 25 V 2 0.2 typ typ 10 0 100 T j ( o C) 0 200 0 4 8 12 VR (V) 16 f = 1 MHz; Tj = 25 °C. Fig.5 2001 May 14 Reverse current as a function of junction temperature. Fig.6 5 Diode capacitance as a function of reverse voltage; typical values. Philips Semiconductors Product specification High-speed switching diode array BAV99S handbook, full pagewidth tr tp t D.U.T. 10% IF RS = 50 Ω IF SAMPLING OSCILLOSCOPE t rr t R i = 50 Ω V = VR I F x R S MGA881 (1) 90% VR input signal output signal (1) IR = 1 mA. Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ = 0.05. Oscilloscope: rise time tr = 0.35 ns. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 kΩ 450 Ω V I 90% R = 50 Ω S D.U.T. OSCILLOSCOPE V fr R i = 50 Ω 10% MGA882 t tr input signal Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty factor δ ≤ 0.005. Fig.8 Forward recovery voltage test circuit and waveforms. 2001 May 14 6 t tp output signal Philips Semiconductors Product specification High-speed switching diode array BAV99S PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT363 D E B y X A HE 6 v M A 4 5 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT363 2001 May 14 REFERENCES IEC JEDEC EIAJ SC-88 7 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification High-speed switching diode array BAV99S DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2001 May 14 8 Philips Semiconductors Product specification High-speed switching diode array BAV99S NOTES 2001 May 14 9 Philips Semiconductors Product specification High-speed switching diode array BAV99S NOTES 2001 May 14 10 Philips Semiconductors Product specification High-speed switching diode array BAV99S NOTES 2001 May 14 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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