Diodes DMN2400UFB4 20v n-channel enhancement mode mosfet Datasheet

DMN2400UFB4
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data













Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Ultra-Low Package Profile, 0.4mm Maximum Package Height
ESD Protected up to 1.5kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
Case: X2-DFN1006-3
Case Material: Molded Plastic, "Green" Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish  NiPdAu over Copper Leadframe; Solderable
per MIL-STD-202, Method 208 e4
Weight: 0.001 grams (Approximate)



D
X2-DFN1006-3
S
G
D
G
ESD PROTECTED TO 1.5kV
Top View
Package Pin Configuration
Bottom View
Gate Protection
Diode
S
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN2400UFB4-7
DMN2400UFB4-7R
DMN2400UFB4-7B
Notes:
Marking
NC
NC
NC
Reel Size (inches)
7
7
7
Tape Width (mm)
8
8
8
Tape Pitch (mm)
4
4
2
Quantity per Reel
3,000
3,000
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
DMN2400UFB4
Document number: DS32025 Rev. 8 - 2
1 of 9
www.diodes.com
March 2017
© Diodes Incorporated
DMN2400UFB4
Marking Information
From date code 1527 (YYWW),
this changes to:
NC
NC
Top View
Bar Denotes Gate and Source Side
Top View
Dot Denotes Drain Side
NC
NC
NC
NC
NC
NC
DMN2400UFB4-7
NC
Top View
Bar Denotes Gate and Source Side
NC = Part Marking Code
DMN2400UFB4-7R
NC
NC
NC
NC
Top View
Bar Denotes Gate and Source Side
NC = Part Marking Code
DMN2400UFB4
Document number: DS32025 Rev. 8 - 2
NC
NC
NC
DMN2400UFB4-7B
2 of 9
www.diodes.com
March 2017
© Diodes Incorporated
DMN2400UFB4
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 4.5V
Symbol
VDSS
VGSS
Value
20
±12
Unit
V
V
ID
0.75
0.55
A
IDM
3
A
TA = +25°C
TA = +85°C
Steady
State
Pulsed Drain Current (Notes 5 & 6)
Thermal Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
Symbol
PD
RθJA
TJ, TSTG
Value
0.47
258
-55 to +150
5. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided.
6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
20
—
V
Zero Gate Voltage Drain Current TJ = +25°C
IDSS
—
—
Gate-Source Leakage
Gate-Source Leakage
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
IGSS
IGSS
IGSS
—
—
—
—
—
—
—
100
50
±100
±1.0
±50
VGS(TH)
Static Drain-Source On-Resistance
RDS(ON)
0.5
—
—
—
—
—
—
—
—
1.0
0.7
0.9
0.55
0.75
0.9
—
1.2
—
—
—
—
—
—
—
—
—
—
36.0
5.7
4.2
0.5
0.07
0.1
4.11
3.82
14.8
9.6
—
—
—
—
—
—
—
—
—
—
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Unit
mW
°C/W
°C
|Yfs|
VSD
Ciss
Coss
Crss
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
nA
nA
μA
μA
V
Ω
S
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
Test Condition
VGS = 0V, ID = 250μA
VDS = 20V, VGS = 0V
VDS = 5V, VGS = 0V
VGS = ±3V, VDS = 0V
VGS = ±4.5V, VDS = 0V
VGS = ±10V, VDS = 0V
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 600mA
VGS = 2.5V, ID = 500mA
VGS = 1.8V, ID = 350mA
VDS = 10V, ID = 400mA
VGS = 0V, IS = 150mA
VDS =16V, VGS = 0V,
f = 1.0MHz
VGS = 4.5V, VDS = 10V,
ID = 250mA
VDD = 10V, VGS = 4.5V,
RL = 47Ω, Rg = 10Ω,
ID = 200mA
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMN2400UFB4
Document number: DS32025 Rev. 8 - 2
3 of 9
www.diodes.com
March 2017
© Diodes Incorporated
DMN2400UFB4
1.5
2.0
VGS = 4.5V
VDS = 5V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VGS = 2.5V
)A
(
T 1.0
N
E
R
R
U
C
N
I
A
R
D 0.5
,D
I
1.5
VGS = 2.0V
1.0
VGS = 1.8V
0.5
VGS = 1.5V
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
VGS = 1.2V
0
1
2
3
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
0
0.5
1
1.5
2
2.5
VGS, GATE SOURCE VOLTAGE (V)
3
Fig. 2 Typical Transfer Characteristics
0.8
)

(
E
C
N
A
T
S
IS
E
R
-N
O
E
C
R
U
O
S
-N
I
A
R
D
, )N
0.6
VGS = 1.8V
0.4
VGS = 2.5V
VGS = 4.5V
0.2
0.8
VGS = 4.5V
0.6
TA= 150°C
TA= 125°C
0.4
TA = 85°C
TA = 25°C
0.2
TA = -55°C
O
(S
D
0
R
0
0.4
0.8
1.2
1.6
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
2
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
1.6
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
0
5
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0
VGS = 4.5V
ID = 1.0A
1.4
VGS = 2.5.V
ID = 500mA
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75 100 125 150
(°C))
TJ, JUNCTION TEMPERATURE (癈
Fig. 5 On-Resistance Variation with Temperature
DMN2400UFB4
Document number: DS32025 Rev. 8 - 2
4 of 9
www.diodes.com
0
0
0.25
0.50
0.75
1.00
1.25 1.50
ID, DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
0.8
0.6
VGS = 2.5V
ID = 500mA
0.4
VGS = 4.5V
ID = 1.0A
0.2
0
-50
-25
0
25
50
75 100 125 150
(°C))
TJ, JUNCTION TEMPERATURE (癈
Fig. 6 On-Resistance Variation with Temperature
March 2017
© Diodes Incorporated
DMN2400UFB4
2.0
VGS(TH), GATE THRESHOLD VOLTAGE (V)
1.2
IS, SOURCE CURRENT (A)
1.0
ID = 1mA
0.8
ID = 250礎
ID=250A
0.6
0.4
-25
60
Ciss
30
20
10
Coss
C rss
0
0
5
10
15
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Capacitance
)A 100,000
n
(
T
N
E 10,000
R
R
U
C
E
G
1,000
A
K
A
E
L
E
100
C
R
U
O
S
-E
10
T
A
G
,S
1
20
TA = 150°C
TA = 85°C
TA = 25°C
TA = -55°C
4
6
8
10
12
VGS , GATE-SOURCE VOLTAGE (V)
Fig. 11 Typical Gate-Source Leakage Current
vs. Gate-Source Voltage
DMN2400UFB4
Document number: DS32025 Rev. 8 - 2
0.2
0.4
0.6
0.8
1.0
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
I
S
G
5 of 9
www.diodes.com
1
1.2
TA = 150°C
TA = 125°C
TA = 85°C
TA = -55°C
TA = 25°C
4
6
8
10 12 14 16 18 20
VDS , DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
)A 100,000
n
(
T
N
E 10,000
R
R
U
C
E
G
1,000
A
K
A
E
L
E
100
C
R
U
O
S
-E
10
T
A
G
,S
TA = 125°C
2
0
IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA)
40
IGSS, GATE-SOURCE LEAKAGE CURRENT (nA)
C, CAPACITANCE (pF)
0.8
)A 1,000
n
(
T
N
E
R
R
U
C
100
E
G
A
K
A
E
L
E
C
R
10
U
O
S
-N
I
A
R
D
,S
S
D
1
I
2
f = 1MHz
50
IGSS, GATE-SOURCE LEAKAGE CURRENT (nA)
1.2
0
0
25
50
75 100 125 150
(°C))
TA, AMBIENT TEMPERATURE (癈
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
S
G
TA = 25癈
25°C
0.4
0.2
0
-50
I
1.6
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
2
4
6
8
10
12
VGS , GATE-SOURCE VOLTAGE (V)
Fig. 12 Typical Gate-Source Leakage Current
vs. Gate-Source Voltage
March 2017
© Diodes Incorporated
DMN2400UFB4
r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
RJA (t) = r(t) * R JA
RJA = 253癈
/W
253°C/W
D = 0.02
0.01 D = 0.01
P(pk)
t2
TJ - TA = P * RJA(t)
Duty Cycle, D = t 1/t2
D = 0.005
D = Single Pulse
0.001
0.00001
DMN2400UFB4
Document number: DS32025 Rev. 8 - 2
0.0001
t1
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (s)
Fig. 13 Transient Thermal Response
6 of 9
www.diodes.com
10
100
1,000
March 2017
© Diodes Incorporated
DMN2400UFB4
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
X2-DFN1006-3
A
A1
Seating Plane
D
b
Pin #1 ID
e
E b2
X2-DFN1006-3
Dim Min Max Typ
A
 0.40 
A1 0.00 0.05 0.03
b
0.10 0.20 0.15
b2 0.45 0.55 0.50
D 0.95 1.05 1.00
E 0.55 0.65 0.60
e
0.35
L1 0.20 0.30 0.25
L2 0.20 0.30 0.25
L3
0.40
z
0.02 0.08 0.05
All Dimensions in mm
z
L3
L2
L1
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
X2-DFN1006-3
C
Y
Y1
G2
X
G1
X1
DMN2400UFB4
Document number: DS32025 Rev. 8 - 2
7 of 9
www.diodes.com
Dimensions
C
G1
G2
X
X1
Y
Y1
Value (in mm)
0.70
0.30
0.20
0.40
1.10
0.25
0.70
March 2017
© Diodes Incorporated
DMN2400UFB4
Tape Information
EMBOSSED CARRIER TAPE SPECIFICATIONS
8, 12, 16, 24mm EMBOSSED TAPE DIMENSIONS IN mm
Tape Size
D
E
Po
tmax
Ao Bo Ko
8mm
1.50 +0.10
–0.0
1.75  0.10
4.0  0.10
0.400
See Note 9
Constant
Dimensions
Tape Size
B1
max
D1
min
F
K
max
P2
R
min
W
Package Type
8mm
4.5
0.35
3.5  0.05
2.4
2.0  0.05
25
8.0  0.30
Refer to 8mm Device Tape
Orientation Table
P
Tape Size
8mm
Note:
2.0  0.05
4.0  0.10
8.0  0.10
12.0  0.10
16.0  0.10
DFN1006 (-7B)
DFN1006 (-7)
DFN1006 (-7R)



9. Ao Bo Ko are determined by component size.
DMN2400UFB4
Document number: DS32025 Rev. 8 - 2
8 of 9
www.diodes.com
March 2017
© Diodes Incorporated
DMN2400UFB4
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for
use provided in the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2017, Diodes Incorporated
www.diodes.com
DMN2400UFB4
Document number: DS32025 Rev. 8 - 2
9 of 9
www.diodes.com
March 2017
© Diodes Incorporated
Similar pages