ON BUH50 Power transistor 4 amperes 800 volts 50 watt Datasheet

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by BUH50/D
SEMICONDUCTOR TECHNICAL DATA
 POWER TRANSISTOR
4 AMPERES
800 VOLTS
50 WATTS
The BUH50 has an application specific state–of–art die designed for use in
50 Watts HALOGEN electronic transformers and switchmode applications.
This high voltage/high speed transistor exhibits the following main feature:
• Improved Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain hFE
— Fast Switching
• Motorola “6SIGMA” Philosophy Provides Tight and Reproductible
Parametric Distributions
• Specified Dynamic Saturation Data
• Full Characterization at 125°C
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CASE 221A–06
TO–220AB
MAXIMUM RATINGS
Symbol
Value
Unit
Collector–Emitter Sustaining Voltage
Rating
VCEO
500
Vdc
Collector–Base Breakdown Voltage
VCBO
800
Vdc
Collector–Emitter Breakdown Voltage
VCES
800
Vdc
Emitter–Base Voltage
VEBO
9
Vdc
Collector Current — Continuous
— Peak (1)
IC
ICM
4
8
Adc
Base Current — Continuous
Base Current — Peak (1)
IB
IBM
2
4
Adc
*Total Device Dissipation @ TC = 25_C
*Derate above 25°C
PD
50
0.4
Watt
W/_C
TJ, Tstg
– 65 to 150
_C
RθJC
RθJA
2.5
62.5
TL
260
Operating and Storage Temperature
THERMAL CHARACTERISTICS
Thermal Resistance
— Junction to Case
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes:
1/8″ from case for 5 seconds
_C/W
_C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
BUH50
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
VCEO(sus)
500
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mA, L = 25 mH)
Collector Cutoff Current
(VCE = Rated VCEO, IB = 0)
Collector Cutoff Current
(VCE = Rated VCES, VEB = 0)
@ TC = 25°C
@ TC = 125°C
Emitter–Cutoff Current
(VEB = 9 Vdc, IC = 0)
Vdc
ICEO
100
µAdc
ICES
100
1000
µAdc
IEBO
100
µAdc
ON CHARACTERISTICS
Base–Emitter Saturation Voltage
(IC = 1 Adc, IB = 0.33 Adc)
(IC = 2 Adc, IB = 0.66 Adc) 25°C
(IC = 2 Adc, IB = 0.66 Adc) 100°C
VBE(sat)
Vdc
0.86
0.94
0.85
1.2
1.6
1.5
@ TC = 25°C
0.2
0.5
(IC = 2 Adc, IB = 0.66 Adc)
@ TC = 25°C
@ TC = 125°C
0.32
0.29
0.6
0.7
(IC = 3 Adc, IB = 1 Adc)
@ TC = 25°C
0.5
1
VCE(sat)
Collector–Emitter Saturation Voltage
(IC = 1 Adc, IB = 0.33 Adc)
DC Current Gain (IC = 1 Adc, VCE = 5 Vdc)
@ TC = 25°C
DC Current Gain (IC = 2 Adc, VCE = 5 Vdc)
@ TC = 25°C
hFE
Vdc
7
13
5
10
—
—
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)
fT
4
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1 MHz)
Cob
50
100
pF
Input Capacitance
(VEB = 8 Vdc)
Cib
850
1200
pF
VCE(dsat)
1.75
5
V
DYNAMIC SATURATION VOLTAGE
Dynamic Saturation
Voltage:
Determined 1 µs and
3 µs respectively after
rising IB1 reaches
90% of final IB1
2
IC = 1 A
IB1 = 0.33 A
VCC = 300 V
IC = 2 A
IB1 = 0.66 A
VCC = 300 V
@ 1 µs
@ TC = 25°C
@ TC = 125°C
@ 3 µs
@ TC = 25°C
@ TC = 125°C
0.3
0.5
V
@ 1 µs
@ TC = 25°C
@ TC = 125°C
6
14
V
@ 3 µs
@ TC = 25°C
@ TC = 125°C
0.75
4
V
Motorola Bipolar Power Transistor Device Data
BUH50
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 µs)
Turn–on Time
Turn–off Time
Turn–on Time
Turn–off Time
Turn–on Time
Turn–off Time
IC = 2 Adc, IB1 = 0.4 Adc
IB2 = 0.4 Adc
VCC = 125 Vdc
@ TC = 25°C
ton
95
250
ns
@ TC = 25°C
toff
2.5
3.5
µs
IC = 2 Adc, IB1 = 0.4 Adc
IB2 = 1 Adc
VCC = 125 Vdc
@ TC = 25°C
ton
110
250
ns
@ TC = 25°C
toff
0.95
2
µs
IC = 1 Adc, IB1 = 0.3 Adc
IB2 = 0.3 Adc
VCC = 125 Vdc
@ TC = 25°C
ton
100
200
ns
@ TC = 25°C
toff
2.9
3.5
µs
SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 µH)
Fall Time
@ TC = 25°C
@ TC = 125°C
tf
80
95
150
ns
@ TC = 25°C
@ TC = 125°C
ts
1.2
1.7
2.5
µs
Crossover Time
@ TC = 25°C
@ TC = 125°C
tc
150
180
300
ns
Fall Time
@ TC = 25°C
@ TC = 125°C
tf
90
100
150
ns
@ TC = 25°C
@ TC = 125°C
ts
1.7
2.5
2.75
µs
@ TC = 25°C
@ TC = 125°C
tc
190
220
350
ns
IC = 2 Adc
IB1 = 0.4 Adc
IB2 = 1 Adc
Storage Time
IC = 2 Adc
IB1 = 0.66 Adc
IB2 = 1 Adc
Storage Time
Crossover Time
TYPICAL STATIC CHARACTERISTICS
100
100
VCE = 5 V
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
VCE = 1 V
TJ = 125°C
TJ = 25°C
10
TJ = – 40°C
1
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain @ 1 Volt
Motorola Bipolar Power Transistor Device Data
10
TJ = 125°C
TJ = 25°C
10
TJ = – 40°C
1
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
10
Figure 2. DC Current Gain @ 5 Volt
3
BUH50
TYPICAL STATIC CHARACTERISTICS
10
10
IC/IB = 3
VCE , VOLTAGE (VOLTS)
VCE , VOLTAGE (VOLTS)
TJ = 25°C
4A
3A
1
2A
1A
1
TJ = – 40°C
TJ = 125°C
0.1
IC = 500 mA
0.1
0.01
TJ = 25°C
0.1
1
IB, BASE CURRENT (mA)
0.01
0.01
10
Figure 3. Collector Saturation Region
10
Figure 4. Collector–Emitter Saturation Voltage
10
10
IC/IB = 3
IC/IB = 5
TJ = – 40°C
VBE , VOLTAGE (VOLTS)
VCE , VOLTAGE (VOLTS)
0.1
1
IC, COLLECTOR CURRENT (AMPS)
1
0.1
TJ = 25°C
TJ = 125°C
1
TJ = – 40°C
TJ = 25°C
TJ = 125°C
0.01
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
0.1
0.01
10
Figure 5. Collector–Emitter Saturation Voltage
0.1
1
IC, COLLECTOR CURRENT (AMPS)
Figure 6. Base–Emitter Saturation Region
10
10000
TJ = 125°C
TJ = – 40°C
TJ = 25°C
0.1
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
Figure 7. Base–Emitter Saturation Region
4
C, CAPACITANCE (pF)
VBE , VOLTAGE (VOLTS)
IC/IB = 5
1
10
10
Cib (pF)
1000
TJ = 25°C
f(test) = 1 MHz
100
Cob (pF)
10
1
1
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Capacitance
Motorola Bipolar Power Transistor Device Data
100
BUH50
TYPICAL SWITCHING CHARACTERISTICS
3000
4000
IBoff = IC/2
VCC = 125 V
PW = 20 µs
TJ = 125°C
TJ = 25°C
2500
TJ = 125°C
TJ = 25°C
3000
IBoff = IC/2
VCC = 125 V
PW = 20 µs
t, TIME (ns)
t, TIME (ns)
2000
IC/IB = 5
1500
2000
IC/IB = 3
1000
1000
500
IC/IB = 3
IC/IB = 5
0
0
1
2
4
3
IC, COLLECTOR CURRENT (AMPS)
5
Figure 9. Resistive Switching, ton
5
Figure 10. Resistive Switch Time, toff
300
4000
IBoff = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 µH
IBoff = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 µH
IC/IB = 3
200
t, TIME (ns)
3000
t, TIME (ns)
2
3
4
IC, COLLECTOR CURRENT (AMPS)
1
2000
tc
100
1000
TJ = 125°C
TJ = 25°C
0
1
TJ = 125°C
TJ = 25°C
tfi
IC/IB = 5
0
2
3
IC, COLLECTOR CURRENT (AMPS)
1
4
3
2
IC, COLLECTOR CURRENT (AMPS)
4
Figure 12. Inductive Storage Time,
tc & tfi @ IC/IB = 3
Figure 11. Inductive Storage Time, tsi
TYPICAL CHARACTERISTICS
250
4000
TJ = 125°C
TJ = 25°C
tc
t si , STORAGE TIME (µs)
t, TIME (ns)
200
150
100
IBoff = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 µH
50
0
1
IBoff = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 µH
TJ = 125°C
TJ = 25°C
3000
IC = 1 A
2000
1000
IC = 2 A
tfi
0
2
3
IC, COLLECTOR CURRENT (AMPS)
4
Figure 13. Inductive Switching, tc & tfi @ IC/IB = 5
Motorola Bipolar Power Transistor Device Data
3
4
5
6
7
hFE, FORCED GAIN
8
9
10
Figure 14. Inductive Storage Time
5
BUH50
TYPICAL CHARACTERISTICS
150
350
t fi , FALL TIME (ns)
130
IC = 1 A
120
t c , CROSSOVER TIME (ns)
IBoff = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 µH
140
110
100
90
80
70
TJ = 125°C
TJ = 25°C
60
50
2
4
IC = 1 A
250
150
IBoff = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 µH
IC = 2 A
TJ = 125°C
TJ = 25°C
IC = 2 A
50
6
hFE, FORCED GAIN
10
8
Figure 15. Inductive Fall Time
3
5
7
hFE, FORCED GAIN
9
11
Figure 16. Inductive Crossover Time
POWER DERATING FACTOR
1
SECOND BREAKDOWN
DERATING
0.8
0.6
THERMAL DERATING
0.4
0.2
0
20
40
80
120
100
60
TC, CASE TEMPERATURE (°C)
140
160
Figure 17. Forward Power Derating
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 20 is based
on T C = 25°C; T J(pk) is variable depending on power level.
Second breakdown pulse limits are valid for duty cycles to
10% but must be derated when T C > 25°C. Second
breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltages shown on
Figure 20 may be found at any case temperature by using
the appropriate curve on Figure 17.
6
TJ(pk) may be calculated from the data in Figure 22. At any
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations
imposed by second breakdown. For inductive loads, high
voltage and current must be sustained simultaneously during
turn–off with the base to emitter junction reverse biased. The
safe level is specified as a reverse biased safe operating
area (Figure 21). This rating is verified under clamped
conditions so that the device is never subjected to an
avalanche mode.
Motorola Bipolar Power Transistor Device Data
BUH50
TYPICAL CHARACTERISTICS
10
VCE
9
dyn 1 µs
90% IC
IC
8
6
0V
tfi
tsi
7
dyn 3 µs
10% IC
10% Vclamp
Vclamp
5
tc
4
IB
90% IB
3
1 µs
2
3 µs
1
0
TIME
Figure 18. Dynamic Saturation Voltage
10
1 ms
5 ms
1
DC
1
2
3
4
TIME
5
6
8
7
5
1 µs
10 µs
0
Figure 19. Inductive Switching Measurements
EXTENDED
SOA
0.1
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
90% IB1
IB
GAIN ≥ 3
4
3
2
–5 V
1
0V
0.01
TC ≤ 125°C
LC = 500 µH
–1.5 V
0
10
100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1000
Figure 20. Forward Bias Safe Operating Area
Motorola Bipolar Power Transistor Device Data
300
600
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
900
Figure 21. Reverse Bias Safe Operating Area
7
BUH50
TYPICAL CHARACTERISTICS
Table 1. Inductive Load Switching Drive Circuit
+15 V
1 µF
150 Ω
3W
100 Ω
3W
IC PEAK
100 µF
MTP8P10
VCE PEAK
VCE
MTP8P10
RB1
MPF930
IB1
MUR105
MPF930
+10 V
Iout
IB
A
50 Ω
MJE210
COMMON
150 Ω
3W
500 µF
IB2
RB2
MTP12N10
V(BR)CEO(sus)
L = 10 mH
RB2 = ∞
VCC = 20 Volts
IC(pk) = 100 mA
1 µF
–Voff
Inductive Switching
L = 200 µH
RB2 = 0
VCC = 15 Volts
RB1 selected for
desired IB1
RBSOA
L = 500 µH
RB2 = 0
VCC = 15 Volts
RB1 selected for
desired IB1
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1
0.5
0.2
P(pk)
0.1
0.1
0.05
t1
0.02
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
0.01
0.1
1
RθJC(t) = r(t) RθJC
RθJC = 2.5°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
10
100
1000
t, TIME (ms)
Figure 22. Typical Thermal Response (ZθJC(t)) for BUH50
8
Motorola Bipolar Power Transistor Device Data
BUH50
PACKAGE DIMENSIONS
–T–
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
–––
–––
0.080
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
–––
–––
2.04
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 221A–06
TO–220AB
ISSUE Y
Motorola Bipolar Power Transistor Device Data
9
BUH50
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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10
◊
Motorola Bipolar Power Transistor Device Data
*BUH50/D*
BUH50/D
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