Comset BUX48 High voltage fast-switching power transistor Datasheet

NPN BUX48 – BUX48A
HIGH VOLTAGE FAST-SWITCHING
POWER TRANSISTOR
They are silicon multiepitaxial mesa NPN transistor in Jedec TO-3 case.
They are intended for use in switching and industrial equipment.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
Collector-Emitter Voltage
IB = 0
VCES
Collector-Emitter Voltage
VBE = 0
VCER
Collector-Emitter Voltage
RBE= 10Ω
VCBO
Collector-Base Voltage
IE = 0
VEBO
IC
ICM
IB
IBM
Pt
TJ
TStg
Emitter-Base Voltage
Collector Current
Collector Current Peak
Base Current
Base Current Peak
Total Power Dissipation
Junction Temperature
Storage Temperature
IC = 0
tp = 5ms
@ TC = 25°
Value
BUX48
BUX48A
BUX48
BUX48A
BUX48
BUX48A
BUX48
BUX48A
Unit
400
450
850
1000
850
1000
850
1000
7
15
30
4
20
175
200
-65 to +200
V
A
A
A
A
W
°C
°C
Value
Unit
1
°C/W
V
V
V
THERMAL CHARACTERISTICS
Symbol
RthJC
Ratings
Thermal Resistance, Junction to Case
COMSET SEMICONDUCTORS
1/3
NPN BUX48 – BUX48A
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
VCEO(SUS)
Collector-Emitter
Sustaining Voltage (*)
IC= 100 mA
VEBO
Emitter-Base Voltage
IC= 0
IE= 50 mA
ICER
ICES
Collector Cutoff
Current
Collector Cutoff
Current
IEBO
Emitter Cutoff Current
hFE
DC Current Gain (*)
VCE(SAT)
Collector-Emitter
saturation Voltage (*)
VBE(SAT)
Base-Emitter
saturation Voltage (*)
BUX48
BUX48A
BUX48
BUX48A
Min
Typ
Max
Unit
400
450
-
-
V
7
-
30
V
-
-
0.5
VCE= 400 V
IB= 0
RBE= 10Ω
@ 25°C
@ 125°C
-
-
4
VCE= 450 V
IB= 0
RBE= 10Ω
VCE= 850 V
VBE= 0
VCE= 1000 V
VBE= 0
@ 25°C
-
-
0.5
-
-
4
0.2
2
0.2
2
-
-
0.1
mA
8
-
-
-
-
-
1.5
-
-
5
-
-
1.6
Min
Typ
Max
-
-
0.9
2
0.4
0.9
2
0.4
BUX48
@ 125°C
@ 25°C
@ 125°C
@ 25°C
@ 125°C
VEB= 5 V, IC= 0
IC= 10 A, VCE= 5 V
IC= 8 A, VCE= 5 V
IC= 10 A, IB= 2 A
IC= 8 A, IB= 1.6 A
IC= 15 A, IB= 34 A
IC= 12 A, IB= 2.4 A
IC= 10 A, IB= 2 A
IC= 12 A, IB= 2.4 A
BUX48A
BUX48
BUX48A
BUX48
BUX48A
BUX48
BUX48A
BUX48
BUX48A
BUX48
BUX48A
BUX48
BUX48A
mA
mA
V
SWITCHING TIMES
Symbol
ton
ts
tf
ton
ts
tf
Ratings
Turn-on time
Storage time
File time
Turn-on time
Storage time
File time
Test Condition(s)
IC=10 A , IB1 = -IB2 =2 A
VCC=300 V, VEB= 5 V
IC=8 A , IB1 = -IB2 =1.6 A
VCC=300 V, VEB= 5 V
Unit
µs
µs
(*) Pulse Duration = 300 µs, Duty Cycle <= 2%
08/11/2012
COMSET SEMICONDUCTORS
2/3
NPN BUX48 – BUX48A
MECHANICAL DATA CASE TO-3
DIMENSIONS (mm)
min
A
B
C
D
E
G
N
P
R
U
V
11
0.97
1.5
8.32
19
10.70
16.50
25
3.84
38.50
29.90
Pin 1 :
Pin 2 :
Case :
typ
-
max
13.10
1.15
1.65
8.92
22
11.1
17.20
27,20
4.21
40.13
30.40
Base
Emitter
Collector
Revised October 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
components in life support devices or systems.
www.comsetsemi.com
08/11/2012
[email protected]
COMSET SEMICONDUCTORS
3/3
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