ADPOW APTM100H45SCT Full bridge series & sic parallel diodes mosfet power module Datasheet

APTM100H45SCT
Full bridge
Series & SiC parallel diodes
MOSFET Power Module
Application
• Motor control
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
VBUS
CR3A
CR3B
Q3
G3
G1
OUT1 OUT2
S1
CR2A
Q2
S3
CR4A
CR2B
CR4B
Q4
G2
G4
S2
S4
0/VBUS
NTC1
•
Parallel SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
•
•
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
NTC2
G3
G4
S3
S4
VBUS
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
0/VBUS
OUT2
OUT1
S1
S2
NTC2
G1
G2
NTC1
•
•
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
T c = 25°C
T c = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
T c = 25°C
Max ratings
1000
18
14
72
±30
450
357
18
50
2500
Unit
V
A
V
mΩ
W
A
June, 2004
CR1B
Q1
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–7
APTM100H45SCT – Rev 1
CR1A
VDSS = 1000V
RDSon = 450mΩ max @ Tj = 25°C
ID = 18A @ Tc = 25°C
APTM100H45SCT
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BVDSS Drain - Source Breakdown Voltage
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Test Conditions
VGS = 0V, ID = 250µA
Min
1000
VGS = 0V,VDS= 1000V
Tj = 25°C
VGS = 0V,VDS= 800V
Tj = 125°C
VGS = 10V, ID = 9A
VGS = VDS, ID = 2.5mA
VGS = ±30 V, VDS = 0V
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
3
Min
VGS = 10V
VBus = 500V
ID = 18A
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy X
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy X
Typ
4350
715
120
154
Max
Unit
V
100
500
450
5
±100
mΩ
V
nA
Max
Unit
µA
pF
nC
26
97
10
Inductive switching @ 125°C
VGS = 15V
VBus = 667V
ID = 18A
R G = 5Ω
Rise Time
Typ
12
ns
121
35
Inductive switching @ 25°C
VGS = 15V, VBus = 667V
ID = 18A, R G = 5Ω
383
µJ
380
Inductive switching @ 125°C
VGS = 15V, VBus = 667V
ID = 18A, R G = 5Ω
627
µJ
451
X In accordance with JEDEC standard JESD24-1.
Test Conditions
IRRM
Maximum Reverse Leakage Current
VR=1200V
IF(A V)
Maximum Average Forward Current
50% duty cycle
Tj = 25°C
Tj = 150°C
Tc = 125°C
Tj = 25°C
Tj = 175°C
Min
1200
100
200
Typ
400
2000
10
1.6
2.6
VF
Diode Forward Voltage
IF = 10A
QC
Total Capacitive Charge
IF = 10A, VR = 600V
di/dt =800A/µs
28
Q
Total Capacitance
f = 1MHz, VR = 200V
90
f = 1MHz, VR = 400V
66
APT website – http://www.advancedpower.com
Max
Unit
V
µA
A
1.8
3.0
June, 2004
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
V
nC
pF
2–7
APTM100H45SCT – Rev 1
Parallel SiC diode ratings and characteristics
APTM100H45SCT
Series diode ratings and characteristics
Symbol Characteristic
IF(A V)
Maximum Average Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
50% duty cycle
IF = 30A
IF = 60A
IF = 30A
IF = 30A
VR = 133V
di/dt = 200A/µs
IF = 30A
VR = 133V
di/dt = 200A/µs
Min
Tj = 125°C
Typ
30
1.1
1.4
0.9
Tj = 25°C
24
Tj = 125°C
48
Tj = 25°C
33
Tj = 125°C
150
Tc = 85°C
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
Typ
Transistor
Series diode
Junction to Case
Parallel diode
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To Heatsink
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.16 K
Min
R 25

 1
1 
exp  B25 / 85 
− 
 T25 T 

Unit
A
1.15
V
ns
nC
Max
0.35
1.2
1.5
Unit
°C/W
V
150
125
100
4.7
160
M5
Temperature sensor NTC
RT =
2500
-40
-40
-40
Max
Typ
68
4080
Max
°C
N.m
g
Unit
kΩ
K
T: Thermistor temperature
RT : Thermistor value at T
APT website – http://www.advancedpower.com
3–7
APTM100H45SCT – Rev 1
June, 2004
Package outline
APTM100H45SCT
Typical MOSFET Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.4
0.35
0.9
0.3
0.7
0.25
0.2
0.5
0.15
0.3
0.1
0.1
0.05
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
80
7V
VGS =15&8V
40
6.5V
30
6V
20
5.5V
10
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
70
60
50
40
30
TJ =25°C
20
10
5V
0
5
10
15
20
25
30
0
Normalized to
VGS=10V @ 9A
VGS=10V
1.2
1.1
VGS=20V
1
0.9
0.8
0
10
20
30
ID, Drain Current (A)
2
3
4
5
6
7
8
9 10
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.3
1
VGS, Gate to Source Voltage (V)
ID, DC Drain Current (A)
RDS(on) Drain to Source ON Resistance
VDS , Drain to Source Voltage (V)
1.4
TJ=-55°C
40
50
20
18
16
14
12
10
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
June, 2004
0
TJ=125°C
0
4–7
APTM100H45SCT – Rev 1
50
ID, Drain Current (A)
I D, Drain Current (A)
60
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25 50 75 100 125 150
ON resistance vs Temperature
2.5
VGS =10V
ID=9A
2.0
1.5
1.0
0.5
0.0
-50 -25
Threshold Voltage vs Temperature
50
75 100 125 150
Maximum Safe Operating Area
1.1
I D, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
25
100
1.2
1.0
0.9
0.8
0.7
100µs
limited by
RDSon
1ms
10
Single pulse
TJ=150°C
10ms
1
0.6
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
1
Capacitance vs Drain to Source Voltage
10000
Ciss
1000
Coss
Crss
100
10
10
20
30
40
50
VDS, Drain to Source Voltage (V)
14
ID=18A
TJ=25°C
12
10
VDS=200V
V DS =500V
VDS=800V
8
6
4
2
0
0
40
80
120
160
200
Gate Charge (nC)
June, 2004
0
10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
100000
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
APT website – http://www.advancedpower.com
5–7
APTM100H45SCT – Rev 1
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTM100H45SCT
APTM100H45SCT
Delay Times vs Current
Rise and Fall times vs Current
60
160
t d(off)
V DS =667V
RG =5Ω
T J=125°C
L=100µH
50
120
100
tr and tf (ns)
VDS=667V
RG=5Ω
TJ=125°C
L=100µH
80
60
40
30
tr
20
40
td(on)
20
10
0
0
5
10
15
20
25
30
35
40
5
10
I D, Drain Current (A)
35
40
2.5
V DS =667V
RG =5Ω
T J=125°C
L=100µH
1
Eon
Eoff
0.5
V DS =667V
ID=18A
T J=125°C
L=100µH
2
Switching Energy (mJ)
Switching Energy (mJ)
15
20 25
30
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
1.5
1.5
Eoff
1
Eon
0.5
0
0
5
10
15
20
25
30
35
40
0
5
I D, Drain Current (A)
10
15
20
25
30
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
I DR, Reverse Drain Current (A)
300
VDS=667V
D=50%
RG=5Ω
T J=125°C
250
200
150
100
50
0
6
8
10
12
14
16
ID, Drain Current (A)
18
100
TJ =150°C
TJ =25°C
10
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
June, 2004
Frequency (kHz)
tf
APT website – http://www.advancedpower.com
6–7
APTM100H45SCT – Rev 1
td(on) and td(off) (ns)
140
APTM100H45SCT
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
1.6
0.9
1.4
1.2
0.7
1
0.8
0.5
0.6
0.3
0.4
0.1
0.2
0
0.00001
Single Pulse
0.05
0.0001
0.001
0.01
0.1
1
Rectangular Pulse Duration (Seconds)
Reverse Characteristics
Forward Characteristics
20
400
15
TJ=75°C
10
T J=125°C
5
TJ=175°C
0
0
0.5
1
1.5
2
2.5
3
3.5
IR Reverse Current (µA)
I F Forward Current (A)
TJ=25°C
300
200
T J=75°C
T J=125°C
100
T J=175°C
0
400
600
VF Forward Voltage (V)
T J=25°C
800 1000 1200 1400 1600
VR Reverse Voltage (V)
Capacitance vs.Reverse Voltage
800
C, Capacitance (pF)
700
600
500
400
300
200
100
0
1000
June, 2004
10
100
VR Reverse Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
7–7
APTM100H45SCT – Rev 1
1
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