MOTOROLA BDX54B Plastic medium-power complementary silicon transistor Datasheet

 Order this document
by BDX53B/D
SEMICONDUCTOR TECHNICAL DATA
!
" . . . designed for general–purpose amplifier and low–speed switching applications.
• High DC Current Gain —
hFE = 2500 (Typ) @ IC = 4.0 Adc
• Collector Emitter Sustaining Voltage — @ 100 mAdc
VCEO(sus) = 80 Vdc (Min) — BDX53B, 54B
VCEO(sus) = 100 Vdc (Min) — BDX53C, 54C
• Low Collector–Emitter Saturation Voltage —
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
• Monolithic Construction with Built–In Base–Emitter Shunt Resistors
• TO–220AB Compact Package
DARLINGTON
8 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
80 – 100 VOLTS
65 WATTS
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MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
VCEO
VCB
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Peak
Base Current
Total Device Dissipation @ TC = 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
BDX53B
BDX54B
BDX53C
BDX54C
Unit
80
100
Vdc
80
100
Vdc
VEB
IC
5.0
Vdc
8.0
12
Adc
IB
PD
0.2
Adc
60
0.48
Watts
W/_C
– 65 to + 150
_C
TJ, Tstg
CASE 221A–06
TO–220AB
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RθJA
70
_C/W
Thermal Resistance, Junction to Case
RθJC
70
_C/W
PD, POWER DISSIPATION (WATTS)
TA TC
4.0 80
3.0
60
TC
2.0
40
1.0
20
TA
0
0
20
40
60
80
100
120
140
160
T, TEMPERATURE (°C)
Figure 1. Power Derating
REV 7
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
v
v
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
80
100
—
—
—
—
0.5
0.5
—
—
0.2
0.2
750
—
—
—
2.0
4.0
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 100 mAdc, IB = 0)
VCEO(sus)
BDX53B, BDX54B
BDX53C, BDX54C
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
(VCE = 50 Vdc, IB = 0)
BDX53B, BDX54B
BDX53C, BDX54C
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0)
BDX53B, BDX54B
BDX53C, BDX54C
Vdc
ICEO
mAdc
ICBO
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 3.0 Adc, VCE = 3.0 Vdc)
hFE
—
Collector–Emitter Saturation Voltage
(IC = 3.0 Adc, IB = 12 mAdc)
VCE(sat)
Vdc
Base–Emitter Saturation Voltage
(IC = 3.0 Adc, IC = 12 mA)
VBE(sat)
—
2.5
Vdc
hfe
4.0
—
—
—
—
300
200
DYNAMIC CHARACTERISTICS
Small–Signal Current Gain
(IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
(1) Pulse Test: Pulse Width
Cob
BDX53B, 53C
BDX54B, 54C
300 µs, Duty Cycle
pF
2%.
5.0
VCC
– 30 V
[
[
[
V1
APPROX
25 µs
–12 V
tr, tf 10 ns
DUTY CYCLE = 1.0%
v
2
2.0
RC
SCOPE
[
+ 4.0 V
for td and tr, D1 is disconnected
and V2 = 0
For NPN test circuit reverse all polarities
Figure 2. Switching Time Test Circuit
ts
3.0
t, TIME ( µs)
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPES, e.g.:
1N5825 USED ABOVE IB 100 mA
MSD6100 USED BELOW IB 100 mA
TUT
RB
V2
APPROX
+ 8.0 V
D1
51
8.0 k
120
0
tf
1.0
0.7
0.5
0.3
tr
0.2
0.1
0.07
0.05
0.1
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
0.2
td @ VBE(off) = 0 V
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0 7.0 10
Figure 3. Switching Times
Motorola Bipolar Power Transistor Device Data
r(t) EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
P(pk)
0.05
0.1
0.07
0.05
RθJC(t) = r(t) RθJC
RθJC = 1.92°C/W
0.02
t1
0.03
SINGLE PULSE
0.01
0.02
SINGLE
PULSE
t2
DUTY CYCLE, D = t1/t2
0.01
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
t, TIME OR PULSE WIDTH (ms)
20
30
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
50
100
200 300
500
1000
Figure 4. Thermal Response
20
100 µs
500 µs
IC, COLLECTOR CURRENT (AMP)
10
5.0
2.0
1.0
0.5
0.2
0.1
5.0 ms
1.0 ms
dc
TJ = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO
0.05
t
BDX53B, BDX54B
BDX53C, BDX54C
0.02
1.0
There are two limitations on the power handling ability of a
transistor average junction temperature and second breakdown. Safe operating area curves indicate I C –VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
20 30
2.0 3.0
5.0 7.0 10
50
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
70 100
Figure 5. Active–Region Safe Operating Area
300
TJ = + 25°C
5000
3000
2000
200
C, CAPACITANCE (pF)
hFE, SMALL–SIGNAL CURRENT GAIN
10,000
1000
500
300
200
TJ = 25°C
VCE = 3.0 V
IC = 3.0 A
100
50
30
20
10
1.0
Cob
100
Cib
70
50
PNP
NPN
2.0
5.0
PNP
NPN
10
20
50 100
f, FREQUENCY (kHz)
200
Figure 6. Small-Signal Current Gain
Motorola Bipolar Power Transistor Device Data
500
1000
30
0.1
0.2
0.5
1.0 2.0
5.0 10
20
VR, REVERSE VOLTAGE (VOLTS)
50
100
Figure 7. Capacitance
3
NPN
BDX53B, 53C
PNP
BDX54B, 54C
20,000
20,000
VCE = 4.0 V
VCE = 4.0 V
5000
3000
2000
10,000
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
10,000
TJ = 150°C
25°C
1000
– 55°C
5000
TJ = 150°C
3000
2000
25°C
1000
– 55°C
500
500
300
200
0.1
300
200
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0 7.0 10
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0 7.0
10
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 8. DC Current Gain
3.0
TJ = 25°C
2.6
IC = 2.0 A
4.0 A
6.0 A
2.2
1.8
1.4
1.0
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IB, BASE CURRENT (mA)
20
30
3.0
TJ = 25°C
2.6
IC = 2.0 A
4.0 A
6.0 A
2.2
1.8
1.4
1.0
0.5 0.7 1.0
0.3
2.0 3.0
5.0 7.0
IB, BASE CURRENT (mA)
10
20
30
Figure 9. Collector Saturation Region
3.0
3.0
TJ = 25°C
2.5
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
TJ = 25°C
2.0
1.5
1.0
VBE(sat) @ IC/IB = 250
VBE @ VCE = 4.0 V
VCE(sat) @ IC/IB = 250
2.5
2.0
1.5
VBE @ VCE = 4.0 V
1.0
VBE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
0.5
0.1
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0
10
0.5
0.1
IC, COLLECTOR CURRENT (AMP)
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0
IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
4
Motorola Bipolar Power Transistor Device Data
10
PNP
BDX54B, BDX54C
+ 5.0
+ 4.0
*IC/IB
+ 3.0
v hFE/3
25°C to 150°C
+ 2.0
+ 1.0
– 55°C to 25°C
0
*θVC for VCE(sat)
– 1.0
– 2.0
25°C to 150°C
– 3.0
θVB for VBE
– 55 to 150°C
– 4.0
– 5.0
0.1
0.5 0.7 1.0
0.2 0.3
2.0 3.0
5.0
θV, TEMPERATURE COEFFICIENT (mV/ °C)
θV, TEMPERATURE COEFFICIENT (mV/ °C)
NPN
BDX53B, BDX53C
+ 5.0
+ 4.0
25°C to 150°C
+ 2.0
+ 1.0
– 55°C to 25°C
0
*θVC for VCE(sat)
– 1.0
– 2.0
25°C to 150°C
– 3.0
θVB for VBE
– 55 to 150°C
– 4.0
– 5.0
7.0 10
v hFE/3
*IC/IB
+ 3.0
0.1
0.5 0.7 1.0
0.2 0.3
2.0 3.0
5.0
7.0 10
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 11. Temperature Coefficients
104
103
105
REVERSE
FORWARD
IC, COLLECTOR CURRENT ( µA)
IC, COLLECTOR CURRENT ( µA)
105
VCE = 30 V
102
TJ = 150°C
101
100
100°C
25°C
10– 1
– 0.6 – 0.4 – 0.2
0
+ 0.2 + 0.4 + 0.6 + 0.8
+ 1.0 + 1.2 + 1.4
104
103
FORWARD
REVERSE
VCE = 30 V
102
101
TJ = 150°C
100°C
100
25°C
10– 1
+ 0.6 + 0.4 + 0.2
VBE, BASE-EMITTER VOLTAGE (VOLTS)
0
– 0.2 – 0.4 – 0.6 – 0.8 – 1.0 – 1.2 – 1.4
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 12. Collector Cut–Off Region
NPN
BDX53B
BDX53C
COLLECTOR
PNP
BDX54B
BDX54C
BASE
COLLECTOR
BASE
[ 8.0 k [ 120
[ 8.0 k [ 120
EMITTER
EMITTER
Figure 13. Darlington Schematic
Motorola Bipolar Power Transistor Device Data
5
PACKAGE DIMENSIONS
–T–
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
–––
–––
0.080
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
–––
–––
2.04
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 221A–06
TO–220AB
ISSUE Y
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6
◊
Motorola Bipolar Power Transistor Device Data
*BDX53B/D*
BDX53B/D
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