LINER LTC1155CS8 Dual high side micropower mosfet driver Datasheet

LTC1155
Dual High Side
Micropower MOSFET Driver
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DESCRIPTIO
FEATURES
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The LTC®1155 dual high side gate driver allows using low
cost N-channel FETs for high side switching applications.
An internal charge pump boosts the gate above the positive rail, fully enhancing an N-channel MOSFET with no
external components. Micropower operation, with 8µA
standby current and 85µA operating current, allows use in
virtually all systems with maximum efficiency.
Fully Enhances N-Channel Power MOSFETs
8µA Standby Current
85µA ON Current
Short-Circuit Protection
Wide Power Supply Range: 4.5V to 18V
Controlled Switching ON and OFF Times
No External Charge Pump Components
Replaces P-Channel High Side MOSFETs
Compatible with Standard Logic Families
Available in 8-Pin SO Package
Included on-chip is overcurrent sensing to provide automatic shutdown in case of short circuits. A time delay can
be added in series with the current sense to prevent false
triggering on high in-rush loads such as capacitors and
incandescent lamps.
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APPLICATI
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The LTC1155 operates off of a 4.5V to 18V supply input
and safely drives the gates of virtually all FETs. The
LTC1155 is well suited for low voltage (battery-powered)
applications, particularly where micropower “sleep” operation is required.
Laptop Power Bus Switching
SCSI Termination Power Switching
Cellular Phone Power Management
P-Channel Switch Replacement
Relay and Solenoid Drivers
Low Frequency Half H-Bridge
Motor Speed and Torque Control
The LTC1155 is available in both 8-pin PDIP and 8-pin SO
packages.
, LTC and LT are registered trademarks of Linear Technology Corporation.
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TYPICAL APPLICATI
Laptop Computer Power Bus Switch with Short Circuit Protection
VS = 4.5V TO 5.5V
+
*IRLR034
5A
MAX
TTL, CMOS INPUT
10µF
DS1
VS
DS2
G1
LTC1155
G2
IN1
GND
IN2
CDLY
0.1µF
RDLY
100k
Switch Voltage Drop
RSEN
0.02Ω
0.25
0.20
VOLTAGE DROP (V)
CDLY
0.1µF
RSEN
0.02Ω
RDLY
100k
*IRLR034
5A
MAX
TTL, CMOS INPUT
POWER BUS
0.15
0.10
0.05
µP
SYSTEM
DISK
DRIVE
DISPLAY
PRINTER,
ETC.
0.00
0
GND
1
2
OUTPUT CURRENT (A)
3
1155 TA02
*SURFACE MOUNT
1155 TA01
1
LTC1155
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AXI U
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ABSOLUTE
RATI GS
(Note 1)
Supply Voltage ........................................................ 22V
Input Voltage ...................... (VS +0.3V) to (GND – 0.3V)
Gate Voltage ......................... (VS +24V) to (GND – 0.3V)
Current (Any Pin).................................................. 50mA
Storage Temperature Range ................. – 65°C to 150°C
Operating Temperature Range
LTC1155C................................................ 0°C to 70°C
LTC1155I........................................... – 40°C to 85°C
LTC1155M ........................................ – 55°C to 125°C
Lead Temperature Range (Soldering, 10 sec.)...... 300°C
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PACKAGE/ORDER I FOR ATIO
TOP VIEW
DS1 1
8 DS2
G1 2
7 G2
GND 3
6 VS
IN1 4
5 IN2
J8 PACKAGE
8-LEAD CERDIP
N8 PACKAGE
8-LEAD PDIP
ORDER PART
NUMBER
ORDER PART
NUMBER
TOP VIEW
LTC1155CN8
LTC1155CJ8
LTC1155IN8
LTC1155MJ8
DS1 1
8
DS2
G1 2
7
G2
GND 3
6
VS
IN1 4
5
IN2
LTC1155CS8
LTC1155IS8
S8 PART MARKING
S8 PACKAGE
8-LEAD PLASTIC SO
TJMAX = 150°C, θJA = 100°C/W (J8)
TJMAX = 100°C, θJA = 130°C/W (N8)
1155
1155I
TJMAX = 100°C, θJA = 150°C/W
ELECTRICAL CHARACTERISTICS
The ● denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C.
VS = 4.5V to 18V, unless otherwise noted.
SYMBOL
PARAMETER
VS
Supply Voltage
IQ
Quiescent Current OFF
VIN = 0V, VS = 5V (Note 2)
Quiescent Current ON
Quiescent Current ON
VINH
Input High Voltage
VINL
Input Low Voltage
IIN
Input Current
CIN
Input Capacitance
VSEN
Drain Sense Threshold Voltage
CONDITIONS
MIN
●
LTC1155M
TYP
MAX
4.5
18
18
V
20
µA
120
85
120
µA
400
180
400
µA
20
VS = 5V, VIN = 5V (Note 3)
85
VS = 12V, VIN = 5V (Note 3)
180
0V < VIN < VS
2.0
4.5
UNITS
8
8
●
LTC1155C/LTC1155I
MIN
TYP
MAX
2.0
V
●
0.8
0.8
V
●
±1.0
±1.0
µA
120
125
mV
mV
5
●
80
75
100
100
●
●
●
6.0
7.5
15
6.8
8.5
18
5
120
125
pF
80
75
100
100
±0.1
µA
9.0
15
25
6.0
7.5
15
6.8
8.5
18
9.0
15
25
V
V
V
±0.1
ISEN
Drain Sense Input Current
0V < VSEN < VS
VGATE-VS
Gate Voltage Above Supply
VS = 5V
VS = 6V
VS = 12V
tON
Turn ON Time
VS = 5V, CGATE = 1000pF
Time for VGATE > VS + 2V
Time for VGATE > VS + 5V
50
200
250
1100
750
2000
50
200
250
1100
750
2000
µs
µs
VS = 12V, CGATE = 1000pF
Time for VGATE > VS + 5V
Time for VGATE > VS + 10V
50
120
180
450
500
1200
50
120
180
450
500
1200
µs
µs
2
LTC1155
ELECTRICAL CHARACTERISTICS
The ● denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C.
VS = 4.5V to 18V, unless otherwise noted.
LTC1155M
TYP
MAX
LTC1155C/LTC1155I
MIN
TYP
MAX
SYMBOL
PARAMETER
CONDITIONS
MIN
tOFF
Turn OFF Time
VS = 5V, CGATE = 1000pF
Time for VGATE < 1V
10
36
60
10
36
60
µs
VS = 12V, CGATE = 1000pF
Time for VGATE < 1V
10
26
60
10
26
60
µs
VS = 5V, CGATE = 1000pF
Time for VGATE < 1V
5
16
30
5
16
30
µs
VS = 12V, CGATE = 1000pF
Time for VGATE < 1V
5
16
30
5
16
30
µs
tSC
Short-Circuit Turn OFF Time
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
UNITS
Note 2: Quiescent current OFF is for both channels in OFF condition.
Note 3: Quiescent current ON is per driver and is measured independently.
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TYPICAL PERFOR A CE CHARACTERISTICS
Standby Supply Current
Supply Current/Side (ON)
VIN1 = VIN2 = 0V
TJ = 25°C
VIN1 OR VIN2 = 2V
TJ = 25°C
900
SUPPLY CURRENT (µA)
40
SUPPLY CURRENT (µA)
24
35
30
25
20
22
800
20
700
18
V GATE – VS (V)
45
600
500
400
16
14
12
300
10
10
200
8
5
100
6
0
0
15
0
15
5
10
SUPPLY VOLTAGE (V)
4
0
20
15
5
10
SUPPLY VOLTAGE (V)
Input Threshold Voltage
1.8
VON
1.6
1.4
VOFF
1.2
1.0
0.8
0.6
0.4
0
15
5
10
SUPPLY VOLTAGE (V)
Low Side Gate Voltage
150
30
140
27
130
24
120
21
110
VGATE (V)
DRAIN SENSE THRESHOLD VOLTAGE (V)
2.0
100
90
1155 G04
18
15
12
80
9
70
6
60
3
50
20
0
15
5
10
SUPPLY VOLTAGE (V)
20
1155 TPC03
Drain Sense Threshold Voltage
2.4
2.2
15
5
10
SUPPLY VOLTAGE (V)
0
20
1155 G02
1155 G01
INPUT THRESHOLD VOLTAGE (V)
High Side Gate Voltage
1000
50
0
20
1155 G05
0
2
8
6
4
SUPPLY VOLTAGE (V)
10
1155 G06
3
LTC1155
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TYPICAL PERFOR A CE CHARACTERISTICS
Turn ON Time
CGATE = 1000pF
900
800
40
700
35
600
500
400
VGS = 5V
300
200
VGS = 2V
100
0
Short-Circuit Turn OFF Delay Time
50
CGATE = 100pF
TIME FOR VGATE < 1V
45
TURN OFF TIME (µs)
TURN-ON TIME (µs)
Turn OFF Time
50
40
30
25
20
15
30
25
15
10
5
0
15
5
10
SUPPLY VOLTAGE (V)
0
20
0
20
Standby Supply Current
Supply Current Per Side (ON)
Input ON Threshold
900
2.2
800
2.0
20
VS = 18V
15
10
5
700
600
500
400
300
200
VS = 5V
0
–50 – 25
INPUT THRESHOLD (V)
45
40
SUPPLY CURRENT (µA)
2.4
30
VS = 12V
100
125
0
– 50 –25
1.8
1.6
1.4
VS = 5V
1.2
1.0
VS = 18V
0.8
VS = 5V
0.6
100
0
25
50
75
TEMPERATURE (°C)
20
1155 G09
1000
25
15
5
10
SUPPLY VOLTAGE (V)
1155 G08
50
35
VSEN = VS –1V
NO EXTERNAL DELAY
20
5
1155 G07
SUPPLY CURRENT (µA)
35
10
0
15
5
10
SUPPLY VOLTAGE (V)
0
CGATE = 1000pF
TIME FOR VGATE < 1V
45
TURN-OFF TIME (µs)
1000
0
25
50
75
TEMPERATURE (°C)
100
1155 G10
125
1155 G11
0.4
–50 – 25
0
25
50
75
TEMPERATURE (°C)
100
125
1155 G12
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PIN FUNCTIONS
Input Pin
The LTC1155 logic input is a high impedance CMOS gate
and should be grounded when not in use. These input pins
have ESD protection diodes to ground and supply and,
therefore, should not be forced beyond the power supply
rails.
Gate Drive Pin
The gate drive pin is either driven to ground when the
switch is turned OFF or driven above the supply rail when
the switch is turned ON. This pin is a relatively high
impedance when driven above the rail (the equivalent of a
4
few hundred kΩ). Care should be taken to minimize any
loading of this pin by parasitic resistance to ground or
supply.
Supply Pin
The supply pin of the LTC1155 serves two vital purposes.
The first is obvious: it powers the input, gate drive,
regulation and protection circuitry. The second purpose is
less obvious: it provides a Kelvin connection to the top of
the two drain sense resistors for the internal 100mV
reference. The supply pin should be connected directly to
the power supply source as close as possible to the top of
the two sense resistors.
LTC1155
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PIN FUNCTIONS
The supply pin of the LTC1155 should not be forced below
ground as this may result in permanent damage to the
device. A 300Ω resistor should be inserted in series with
the ground pin if negative supply voltages are anticipated.
This pin is also a high impedance CMOS gate with ESD
protection and, therefore, should not be forced beyond the
power supply rails. To defeat the over current protection,
short the drain sense to supply.
Drain Sense Pin
Some loads, such as large supply capacitors, lamps or
motors require high inrush currents. An RC time delay
must be added between the sense resistor and the drain
sense pin to ensure that the drain sense circuitry does not
false trigger during start-up. This time constant can be set
from a few microseconds to many seconds. However, very
long delays may put the MOSFET in risk of being destroyed
by a short-circuit condition (see Applications Information
section).
As noted previously, the drain sense pin is compared
against the supply pin voltage. If the voltage at this pin is
more than 100mV below the supply pin, the input latch will
be reset and the MOSFET gate will be quickly discharged.
Cycle the input to reset the short-circuit latch and turn the
MOSFET back on.
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BLOCK DIAGRA
VS
LOW STANDBY
CURRENT
REGULATOR
100mV
REFERENCE
ANALOG
IN
DRAIN
SENSE
ANALOG SECTION
TTL-TO-CMOS
CONVERTER
COMP
10µs
DELAY
GATE CHARGE
AND DISCHARGE
CONTROL LOGIC
DIGITAL
VOLTAGE
REGULATORS
R
ONE
SHOT
S
GATE
INPUT
LATCH
OSCILLATOR
AND CHARGE
PUMP
FAST/SLOW
GATE CHARGE
LOGIC
GND
1155 BD
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OPERATIO
The LTC1155 contains two independent power MOSFET
gate drivers and protection circuits (refer to the Block
Diagram for details). Each half of the LTC1155 consists of
the following functional blocks:
to CMOS converter output enables the rest of the circuitry.
In this way the power consumption is kept to a minimum
in the standby mode.
Internal Voltage Regulation
TTL and CMOS Compatible Inputs
Each driver input has been designed to accommodate a
wide range of logic families. The input threshold is set at
1.3V with approximately 100mV of hysteresis.
A voltage regulator with low standby current provides
continuous bias for the TTL to CMOS converters. The TTL
The output of the TTL to CMOS converter drives two
regulated supplies which power the low voltage CMOS
logic and analog blocks. The regulator outputs are isolated
from each other so that the noise generated by the charge
pump logic is not coupled into the 100mV reference or the
analog comparator.
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LTC1155
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OPERATIO
Gate Charge Pump
Gate drive for the power MOSFET is produced by an
adaptive charge pump circuit that generates a gate voltage
substantially higher than the power supply voltage. The
charge pump capacitors are included on-chip and, therefore, no external components are required to generate the
gate drive.
Drain Current Sense
The LTC1155 is configured to sense the drain current of
the power MOSFET in high side applications. An internal
100mV reference is compared to the drop across a sense
resistor (typically 0.002Ω to 0.1Ω) in series with the drain
Controlled Gate Rise and Fall Times
When the input is switched ON and OFF, the gate is
charged by the internal charge pump and discharged in a
controlled manner. The charge and discharge rates have
been set to minimize RFI and EMI emissions in normal
operation. If a short circuit or current overload condition
is encountered, the gate is discharged very quickly (typically a few microseconds) by a large N-channel transistor.
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APPLICATI
lead. If the drop across this resistor exceeds the internal
100mV threshold, the input latch is reset and the gate is
quickly discharged by a large N-channel transistor.
S I FOR ATIO
VS = 5.0V
Protecting the MOSFET
The MOSFET is protected against destruction by removing
drive from the gate as soon as an overcurrent condition is
detected. Resistive and inductive loads can be protected
with no external time delay. Large capacitive or lamp
loads, however, require that the overcurrent shutdown
function be delayed long enough to start the load but short
enough to ensure the safety of the MOSFET.
CDLY
0.22µF
RDLY
270k
VS
IN1
DS1
LTC1155
GND
G1
Example Calculations
Consider the circuit of Figure 1. A power MOSFET is driven
by one side of an LTC1155 to switch a high inrush current
load. The drain sense resistor is selected to limit the
maximum DC current to 3.3A.
RSEN = VSEN/ITRIP
= 0.1/3.3A
= 0.03Ω
A time delay is introduced between RSEN and the drain
sense pin of the LTC1155 which provides sufficient delay
to start a high inrush load such as large supply capacitors.
In this example circuit, we have selected the IRLZ34
because of its low RDS(ON )(0.05Ω with VGS = 5V). The FET
6
RSEN
0.03Ω
IRLZ34
LOAD
GND
1155 F01
Figure 1. Adding an RC Delay
drops 0.1V at 2A and, therefore, dissipates 200mW in
normal operation (no heat sinking required).
If the output is shorted to ground, the current through the
FET rises rapidly and is limited by the RDS(ON) of the FET,
the drain sense resistor and the series resistance between the power supply and the FET. Series resistance in
the power supply can be substantial and attributed to
many sources including harness wiring, PCB traces,
supply capacitor ESR, transformer resistance or battery
resistance.
LTC1155
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APPLICATI
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IPEAK = VSUPPLY/0.08Ω
= 62.5A
The drop across the drain sense resistor under these
conditions is much larger than 100mV and is equal to the
drain current times the sense resistance:
VDROP = (IPEAK)(RSEN)
= 1.88V
By consulting the power MOSFET data sheet SOA graph,
we note that the IRLZ34 is capable of delivering 62.5A at
a drain-to-source voltage of 3.12V for approximately
10ms.
Graphical Approach to Selecting RDLY and CDLY
Figure 2 is a graph of normalized overcurrent shutdown
time versus normalized MOSFET current. This graph can
be used instead of the above equation to calculate the RC
time constant. The Y axis of the graph is normalized to one
RC time constant. The X axis is normalized to the set
current. (The set current is defined as the current required
to develop 100mV across the drain sense resistor).
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OVERCURRENT SHUTDOWN TIME (1= RC)
For this example, we assume a worst-case scenario; i.e.,
that the power supply to the power MOSFET is “hard” and
provides a constant 5V regardless of the current. In this
case, the current is limited by the RDS(ON) of the MOSFET
and the drain sense resistance. Therefore:
1
0.1
0.01
An RC time constant can now be calculated which satisfies
this requirement:
RC =
RC =
–t

VSEN 

In 1 −
 R SEN • I MAX 
– 0.01


0.10
In 1 −

 0.030 • 62.5 
= – 0.01/– 0.054
= 182ms
This time constant should be viewed as a maximum safe
delay time and should be reduced if the competing
requirement of starting a high inrush current load is less
stringent; i.e., if the inrush time period is calculated at
20ms, the RC time constant should be set at roughly two
or three times this time period and not at the maximum of
182ms. A 60ms time constant would be produced with a
270k resistor and a 0.22µF capacitor (as shown in
Figure 1).
1
2
50 100
5
10
20
MOSFET CURRENT (1 = SET CURRENT)
1155 F02
Figure 2. Shutdown Time vs MOSFET Current
Note that the shutdown time is shorter for increasing
levels of MOSFET current. This ensures that the total
energy dissipated by the MOSFET is always within the
bounds established by the MOSFET manufacturer for safe
operation.
In the example presented above, we established that the
power MOSFET should not be allowed to pass 62.5A for
more than 10ms. 62.5A is roughly 18 times the set current
of 3.3A. By drawing a line up from 18 and reflecting it off
the curve, we establish that the RC time constant should
be set at 10ms divided by 0.054, or 180ms. Both methods
result in the same conclusion.
Using a Speed Up Diode
A way to further reduce the amount of time that the power
MOSFET is in a short-circuit condition is to “bypass”the
delay resistor with a small signal diode as shown in Figure
3. The diode will engage when the drop across the drain
sense resistor exceeds 0.7V, providing a direct path to the
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LTC1155
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APPLICATI
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VS = 5.0V
CDLY
0.22µF
RDLY
270k
VS
IN1
RSEN
0.025Ω
DS1
D1
1N4148
LTC1155
IRLZ34
G1
GND
If the MOSFET is turned ON and the power supply (battery)
removed, the inductor current is delivered by the supply
capacitor. The supply capacitor must be large enough to
deliver the energy demanded by the discharging inductor.
If the storage capacitor is too small, the supply lead of the
LTC1155 may be pulled below ground, permanently
destroying the device.
LOAD
GND
1155 F03
Figure 3. Using a Speed-Up Diode
sense pin and dramatically reducing the amount of time
the MOSFET is in an overload condition. The drain sense
resistor value is selected to limit the maximum DC current
to 4A. Above 28A, the delay time drops to 10µs.
Switched Supply Applications
Large inductive loads, such as solenoids, relays and
motors store energy which must be directed back to either
the power supply or to ground when the supply voltage is
interrupted (see Figure 4). In normal operation, when the
switch is turned OFF, the energy stored in the inductor is
harmlessly absorbed by the MOSFET; i.e., the current
flows out of the supply through the MOSFET until the
inductor current falls to zero.
Consider the case of a load inductance of 1mH which is
supporting 3A when the 6V power supply connection is
interrupted. A supply capacitor of at least 250µF is
required to prevent the supply lead of the LTC1155 from
being pulled below ground (along with any other circuitry
tied to the supply).
Any wire between the power MOSFET source and the load
will add a small amount of parasitic inductance in series
with the load (approximately 0.4µH/foot). Bypass the
power supply lead of the LTC1155 with a minimum of
10µF to ensure that this parasitic load inductance is
discharged safely, even if the load is otherwise resistive.
Large Inductive Loads
Large inductive loads (>0.1mH) may require diodes connected directly across the inductor to safely divert the
stored energy to ground. Many inductive loads have these
diodes included. If not, a diode of the proper current rating
should be connected across the load to safely divert the
stored energy.
Reverse-Battery Protection
+
+
CS
RSEN
0.025Ω
RDLY
VS
IN1
CDLY
DS1
LTC1155
GND
G1
IRLZ34
L LOAD
GND
1155 F04
Figure 4. Switched Supply
8
The LTC1155 can be protected against reverse-battery
conditions by connecting a resistor in series with the
ground lead as shown in Figure 5. The resistor limits the
supply current to less than 50mA with –12V applied. Since
the LTC1155 draws very little current while in normal
operation, the drop across the ground resistor is minimal.
The TTL or CMOS driving logic is protected against
reverse-battery conditions by the 100k input current limiting resistor. The addition of 100k resistance in series
with the input pin will not affect the turn ON and turn OFF
times which are dominated by the controlled gate charge
and discharge periods.
LTC1155
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APPLICATI
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VS = 4.5V TO 18V
18.6V and pulls the drain sense pin 0.6V below the supply
pin voltage.
RSEN
CDLY
RDLY
VS
DS1
+
IN1
The supply voltage is limited to 18.6V and the gate drive is
immediately removed from the MOSFET to ensure that it
cannot conduct during the overvoltage period. The gate of
the MOSFET will be latched OFF until the supply transient
is removed and the input turned OFF and ON again.
10µF
25V
LTC1155
100k
G1
GND
VS = 4.5V TO 18V
5V
300Ω
1/4W
510Ω
LOAD
GND
10k
1155 F05
VS
DS1
Figure 5. Reverse Battery Protection
IN1
LTC1155
Overvoltage Protection
G1
GND
The MOSFET and load can be protected against overvoltage conditions by using the circuit of Figure 6. The drain
sense function is used to detect an overvoltage condition
and quickly discharge the power MOSFET gate. The 18V
zener diode conducts when the supply voltage exceeds
1N4148
18V
LOAD
GND
1155 F06
Figure 6. Overvoltage Shutdown and Protection
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TYPICAL APPLICATI
S
Dual 2A Autoreset Electronic Fuse
5V
+
10µF
0.1µF
0.03Ω
0.1µF
30k
DS1
G1
1/2 SI9956DY
8
4
3 fO = 1Hz
1N4148
0.03Ω
30k
VS
DS2
G2
LTC1155
100k
IN1
1/2 SI9956DY
100k
IN2
GND
750k
LMC555
6
1
1N4148
2
OUT 1
OUT 2
1.0µF
ALL COMPONENTS SHOWN ARE SURFACE MOUNT
1155 TA03
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LTC1155
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TYPICAL APPLICATI
S
High Side Driver with VDS Sense Short-Circuit Shutdown
X-NOR Fault Detection
4.5V TO 6V
4.5V TO 6V
+
+
10µF
VS
5V
IN1
*
10µF
30k
0.1Ω
VS
DS1
1/2
LTC1155
GND
IN1
IRLZ24
G1
DS1
1/2
LTC1155
GND
10k
IRLD024
G1
100k
0.01µF
270k
FAULT
LOAD
74C266
LOAD
1155 TA05
*ANY 74C OR 74HC LOGIC GATE.
MOSFET SHUTS DOWN IF VDS > 1V
1155 TA04
Truth Table
Low Side Driver with Drain End Current Sensing
IN
OUT
CONDITION
FLT
0
0
Switch OFF
1
1
0
Short Circuit
0
0
1
Open Load
0
1
1
Switch ON
1
Low Side Driver with Source End Current Sensing
5V
VLOAD
5V
+
+
10µF
10µF
51Ω
0.05Ω
5%
VS
IN1
DS1
1/2
LTC1155
GND
VS
LOAD
G1
SMP25N05
IN1
LOAD
DS1
1/2
LTC1155
GND
SMP25N05
G1
7
+
6
1155 TA06
3
LT®1077*
–
51Ω
4
2
0.02Ω
5%
1155 TA07
*DO NOT SUBSTITUTE. MUST BE A PRECISION, SINGLE
SUPPLY, MICROPOWER OP AMP (IQ < 60µA)
10
LTC1155
UO
TYPICAL APPLICATI
S
Automotive High Side Driver with Reverse-Battery
and High Voltage Transient Protection
5V/3A Extremely Low Voltage Drop Regulator with 10µA Standby
Current and Short-Circuit Protection
5.2V TO 6V
9V TO 16V
+
100k*
IN1
10µF
0.02Ω
5%
0.1µF
RDLY**
VS
5V
+
CDLY**
10µF
18V
1N4746A
1/2
LTC1155
300k
VS
DS1
IN1
ON/OFF
0.02Ω
DS1
1/2
LTC1155
100k
MTP50N05E
G1
GND
IRLR024
G1
GND
18V
1N4746A
200pF
FAULT
10k
0.1µF
300Ω
1/4W
VALVE,
ETC.
M
1
8
3
LT1431
7
4
1155 TA08
*PROTECTS TTL/CMOS GATES DURING HIGH VOLTAGE
TRANSIENT OR REVERSE BATTERY
6
**NOT REQUIRED FOR INDUCTIVE OR RESISTIVE LOADS
5V/3A
+
470µF*
5
*CAPACITOR ESR SHOULD BE LESS THAN 0.5Ω
Using the Second Channel for Fault Detection
1155 TA09
Bootstrapped Gate Drive for (100Hz < FO < 10kHz)
4.5V TO 5.5V
9V TO 18V
+
100k
0.1µF*
10µF
0.01µF
0.05Ω
FLT
µP OR
CONTROL
LOGIC
ON/OFF
DS1
VS
DS2
VS
1N4148
G2
1N4148
100k
LTC1155
SMD25N05-45L
IN2
IN1
GND
1N4148
G1
µP OR
CMOS/TTL
LOGIC
IN1
30k
DS1
1/2
LTC1155
2N2222
GND
G1
0.1µF
IRFZ44
LOAD
VGATE = 2VS – 0.6V
NOTE:
DRAIN SENSE 2 IS USED TO DETECT A FAULT IN CHANNEL 1.
GATE 2 PULLS DOWN ON DRAIN SENSE 1 TO DISCHARGE
THE MOSFET AND REPORT THE FAULT TO THE µP
0.01Ω
5V
30k*
18V
2N3906
LOAD
1155 TA10
RISE AND FALL TIMES ARE βETA TIMES FASTER
1155 TA11
*NOT REQUIRED FOR RESISTIVE OR INDUCTIVE LOADS
11
LTC1155
UO
TYPICAL APPLICATI
S
Logic Controlled Boost Mode Switching Regulator with Short-Circuit Protection and 8µA Standby Current
4.75V TO 5.25V
+
0.33µF
100µF
100k
VS
FROM µP, ETC.
0.02Ω
DS1
1/2
LTC1155
IN1
MTM25N05L
G1
GND
5V SWITCHED
FAULT
1N5820
50µH*
1N4148
12V/1A
5
4
1
+
LT1170
68µF
10.7k
1%
2
+
2200µF
1k
3
1.24k
1%
1µF
*COILTRONICS CTX-7-52
1155 TA12
High Efficiency 60Hz Full-Wave Synchronous Rectifier
**
18V
1N4746A
S
1N4148
IRFZ44*
9V/3A
DC
D
100k
10k
12.6VCT
10Ω
110V AC
2
3
–
+
1N4148
DS1
IN1
7
LT1006
6
VS
DS2
G1
+
LTC1155
1N4148
IN2
4
4700µF
16V
G2
GND
1N4148
0.03Ω
+
10k
10µF
100k
1N4001
18V
1N4746A S
**
MOSFETs ARE SYNCHRONOUSLY ENHANCED WHEN RECTIFIER CURRENT EXCEEDS 300mA
*NO HEATSINK REQUIRED. CASES (DRAINS) CAN BE TIED TOGETHER
**INTERNAL BODY DIODE OF MOSFET
12
D
IRFZ44*
1155 TA13
LTC1155
UO
TYPICAL APPLICATI
S
High Efficiency 60Hz Full-Wave Synchronous Rectifier
9V/3A
DC
10k
110V AC
6.3V AC
2
100k
1N4148
–
DS2
IN1
7
6
LT1006
3
4 × IRFZ44*
+
VS
DS1
G1
**
LTC1155
1N4148
IN2
4
**
18V
1N4746A
100k
10Ω
D
S
D
S
S
S
D
**
+
4700µF
16V
G2
GND
10k
D
**
18V
1N4746A
0.03Ω
1155 TA14
MOSFETs ARE SYNCHRONOUSLY ENHANCED WHEN RECTIFIER CURRENT EXCEEDS 300mA
*NO HEATSINK REQUIRED
**INTERNAL BODY DIODE OF MOSFET
Push-Pull Driver with Shoot-Through Current Lockout (fO < 100Hz)
4.5V TO 6V
5V
100k
0.01Ω
0.1µF
300k
10µF
100k
DS1
IN1
HI/LO
74HC02
VS
DS2
G1
*
IRLZ24
LTC1155
IN2
VOUT
G2
*
IRFZ24
GND
1N4148
1N4148
1155 TA15
*OPPOSING GATE MUST DROP BELOW 2V BEFORE THE OTHER IS CHARGED
13
LTC1155
UO
TYPICAL APPLICATI
S
Full H-Bridge Driver with Shoot-Through Current Lockout and Stall Current Shutdown (fO < 100Hz)
4.5V TO 6V
10µF
0.01Ω
0.1µF
100k
5V
DIRECTION
74HC02
DS1
IN1
VS
DS2
G1
IRLZ44
IRLZ44
*
LTC1155
IN2
VN2222L
G2
M
GND
DISABLE
*
IRFZ44
IRFZ44
VN2222L
1155 TA16
*OPPOSING GATES ARE HELD OFF UNTIL OTHER GATES DROP BELOW 1.5V
DC Motor Speed and Torque Control for Cordless Tools and Appliances
+
100Ω
6V
+
0.1µF
1.1k
47µF
16V
300k
1M
0.1Ω
10k
TORQUE
ADJUST
1M
1A TO
10A
MAX
100k
+
DS1
IN1
1/2
LT1017
–
1M
1M
10k
SPEED
ADJUST
120k
–
0.0033µF
DS2
G1
IRFZ24
LTC1155
+
1/2
LT1017
VS
IN2
G2
GND
SMALL DC APPLIANCE
OR TOOL MOTOR
M
100k
1155 TA17
SPEED IS PROPORTIONAL TO PULSE WIDTH. TORQUE IS PROPORTIONAL TO CURRENT
14
LTC1155
U
PACKAGE DESCRIPTIO
Dimensions in inches (milimeters) unless otherwise noted.
J8 Package
8-Lead CERDIP (Narrow 0.300, Hermetic)
(LTC DWG # 05-08-1110)
0.300 BSC
(0.762 BSC)
CORNER LEADS OPTION
(4 PLCS)
0.015 – 0.060
(0.381 – 1.524)
0.023 – 0.045
(0.584 – 1.143)
HALF LEAD
OPTION
0.008 – 0.018
(0.203 – 0.457)
0° – 15° 0.045 – 0.068
(1.143 – 1.727)
FULL LEAD
OPTION
0.405
(10.287)
MAX
0.005
(0.127)
MIN
0.200
(5.080)
MAX
8
0.220 – 0.310
(5.588 – 7.874)
2
3
4
J8 1197
0.125
3.175
0.100 ± 0.010 MIN
(2.540 ± 0.254)
0.014 – 0.026
(0.360 – 0.660)
NOTE: LEAD DIMENSIONS APPLY TO SOLDER DIP/PLATE
OR TIN PLATE LEADS
5
0.025
(0.635)
RAD TYP
1
0.045 – 0.068
(1.143 – 1.727)
6
7
N8 Package
8-Lead PDIP (Narrow 0.300)
(LTC DWG # 05-08-1510)
0.300 – 0.325
(7.620 – 8.255)
0.009 – 0.015
(0.229 – 0.381)
(
+0.035
0.325 –0.015
+0.889
8.255
–0.381
)
0.045 – 0.065
(1.143 – 1.651)
0.400*
(10.160)
MAX
0.130 ± 0.005
(3.302 ± 0.127)
0.065
(1.651)
TYP
8
7
6
5
1
2
3
4
0.255 ± 0.015*
(6.477 ± 0.381)
0.125
(3.175) 0.020
MIN (0.508)
MIN
0.018 ± 0.003
(0.457 ± 0.076)
0.100 ± 0.010
(2.540 ± 0.254)
N8 1197
*THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS.
MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.010 INCH (0.254mm)
S8 Package
8-Lead Plastic Small Outline (Narrow 0.150)
(LTC DWG # 05-08-1610)
0.189 – 0.197*
(4.801 – 5.004)
0.010 – 0.020
× 45°
(0.254 – 0.508)
0.008 – 0.010
(0.203 – 0.254)
0.053 – 0.069
(1.346 – 1.752)
0.004 – 0.010
(0.101 – 0.254)
8
7
6
5
0°– 8° TYP
0.016 – 0.050
0.406 – 1.270
0.014 – 0.019
(0.355 – 0.483)
*DIMENSION DOES NOT INCLUDE MOLD FLASH. MOLD FLASH
SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE
**DIMENSION DOES NOT INCLUDE INTERLEAD FLASH. INTERLEAD
FLASH SHALL NOT EXCEED 0.010" (0.254mm) PER SIDE
0.050
(1.270)
TYP
0.150 – 0.157**
(3.810 – 3.988)
0.228 – 0.244
(5.791 – 6.197)
SO8 0996
1
2
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
3
4
15
LTC1155
UO
TYPICAL APPLICATI
S
Isolated High Voltage High Side Switch with Circuit Breaker
6V TO 12V
1N5817
1N4148
1/6 74C14
1k
C
0.1µF
200V
10mA
CONTROL
1k
B
100k
+
90V
4N28
E
DS1
IN1
10µF
25V
1N4148
100pF
VS
DS2
G1
6A MAX
LTC1155
1N5817
IN2
1k
G2
2N2222
GND
18V
1N4746A
1M
0.1Ω
MUR420
M
1155 TA18
Isolated Solid-State AC Relay with Circuit Breaker
18V
1N4746A
18V
1N4746A
IN/OUT
IRFZ24
5V
0.1µF
1/6 74C14
0.01µF
5.6V
1N4690A
1N5817
100k
0.0022µF
DS1
IN1
+
100k
300Ω
600Ω
1µF
VS
DS2
G1
IN2
1/6 74C14
T1*
0.05Ω
IRFZ24
LTC1155
1N4148
ON/OFF
100k
100k
IN/OUT
24V AC
2A MAX
G2
GND
EQUIVALENT FUNCTION
*PICO ELECTRONICS F-28115 OR EQUIVALENT
IN/OUT
ON/OFF
IN/OUT
2A
1155 TA19
RELATED PARTS
PART NUMBER
DESCRIPTION
COMMENTS
LTC1153
Auto-Reset Electronic Circuit Breaker
Programmable Trip Current, Fault Status Output
LT1161
Quad Protected High Side MOSFET Driver
8V to 48V Supply Range, Individual Short-Circuit Protection
LTC1163
Triple 1.8V to 6V High Side MOSFET Driver
0.01µA Standby Current, Triple Driver in SO-8 Package
LTC1255
Dual 24V High Side MOSFET Driver
Operates from 9V to 24V, Short-Circuit Protection
LTC1477
Protected Monolithic High Side Switch
Low RDS(ON) 0.07Ω Switch, 2A Short-Circuit Protected
LTC1623
SMBus Dual High Side Switch Controller
2-Wire SMBus Serial Interface, Built-In Gate Charge Pumps
LTC1710
SMBus Dual Monolithic High Side Switch
Two Low RDS(ON) 0.4Ω/300mA Switches in 8-Lead MSOP Package
16
Linear Technology Corporation
1155fa LT/TP 0399 2K REV A • PRINTED IN USA
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408)432-1900 ● FAX: (408) 434-0507 ● www.linear-tech.com
 LINEAR TECHNOLOGY CORPORATION 1991
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