ON MJE800T Darlington power transistors complementary Datasheet

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by MJE700/D
SEMICONDUCTOR TECHNICAL DATA
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. . . designed for general–purpose amplifier and low–speed switching applications.
• High DC Current Gain —
hFE = 2000 (Typ) @ IC = 2.0 Adc
• Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage
Multiplication
• Choice of Packages —
MJE700 and MJE800 series
T0220AB, MJE700T and MJE800T
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MAXIMUM RATINGS
Symbol
MJE700,T
MJE800,T
MJE702
MJE703
MJE802
MJE803
VCEO
60
80
Vdc
Collector–Base Voltage
VCB
60
80
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
Collector Current
IC
4.0
Adc
Base Current
IB
0.1
Adc
Rating
Collector–Emitter Voltage
Total Power Dissipation @ TC = 25_C
Derate above 25_C
CASE 77
TO–220
40
0.32
50
0.40
PD
Operating and Storage Junction
Temperature Range
TJ, Tstg
Unit
Thermal Resistance, Junction to Case
CASE 77
TO–220
RθJC
4.0 AMPERE
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY
SILICON
40 WATT
50 WATT
_C
THERMAL CHARACTERISTICS
Symbol
Watts
W/_C
– 55 to + 150
Characteristic
Max
Unit
CASE 77–08
TO–225AA TYPE
MJE700 – 703
MJE800 – 803
_C/W
3.13
2.50
PD, POWER DISSIPATION (WATTS)
50
40
TO–220AB
30
TO–126
20
CASE 221A–06
TO–220AB
MJE700T
MJE800T
10
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
REV 3
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
V(BR)CEO
60
80
—
—
Vdc
—
—
100
100
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (1)
(IC = 50 mAdc, IB = 0)
MJE700,T, MJE800,T
MJE702, MJE703, MJE802, MJE803
µAdc
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
MJE700,T, MJE800,T
(VCE = 80 Vdc, IB = 0)
MJE702, MJE703, MJE802, MJE803
Collector Cutoff Current (VCB = Rated BVCEO, IE = 0)
Collector Cutoff Current (VCB = Rated BVCEO, IE = 0, TC = 100_C)
ICEO
ICBO
—
—
100
500
µAdc
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
—
2.0
mAdc
750
750
100
—
—
—
—
—
—
2.5
2.8
3.0
—
—
—
2.5
2.5
3.0
1.0
—
ON CHARACTERISTICS
DC Current Gain (1)
(IC = 1.5 Adc, VCE = 3.0 Vdc)
(IC = 2.0 Adc, VCE = 3.0 Vdc)
(IC = 4.0 Adc, VCE = 3.0 Vdc)
hFE
—
MJE700,T, MJE702, MJE800,T, MJE802
MJE703, MJE803
All devices
Collector–Emitter Saturation Voltage (1)
(IC = 1.5 Adc, IB = 30 mAdc)
(IC = 2.0 Adc, IB = 40 mAdc)
(IC = 4.0 Adc, IB = 40 mAdc)
Base–Emitter On Voltage (1)
(IC = 1.5 Adc, VCE = 3.0 Vdc)
(IC = 2.0 Adc, VCE = 3.0 Vdc)
(IC = 4.0 Adc, VCE = 3.0 Vdc)
VCE(sat)
Vdc
MJE700,T, MJE702, MJE800,T, MJE802
MJE703, MJE803
All devices
VBE(on)
Vdc
MJE700,T, MJE702, MJE800,T, MJE802
MJE703, MJE803
All devices
DYNAMIC CHARACTERISTICS
Small–Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
(1) Pulse Test: Pulse Width
300 µs, Duty Cycle
hfe
—
2.0%.
4.0
VCC
– 30 V
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
RC
VCC = 30 V
IC/IB = 250
ts
IB1 = IB2
TJ = 25°C
2.0
SCOPE
t, TIME ( µs)
TUT
V2
APPROX
+ 8.0 V
RB
51
0
V1
APPROX
–12 V
D1
≈ 6.0 k
≈ 150
For td and tr, D1 id disconnected
and V2 = 0, RB and RC are varied
to obtain desired test currents.
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
For NPN test circuit, reverse diode,
polarities and input pulses.
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
tr
0.6
0.4
+ 4.0 V
25 µs
tf
1.0
0.8
td @ VBE(off) = 0
0.2
0.04 0.06
Figure 2. Switching Times Test Circuit
PNP
NPN
0.1
0.2
0.4 0.6
1.0
IC, COLLECTOR CURRENT (AMP)
2.0
4.0
Figure 3. Switching Times
1.0
0.7
0.5
0.3
0.2
D = 0.5
0.2
0.1
0.1
0.07
0.05
0.02
0.03
0.01
0.02
0.01
0.01
SINGLE PULSE
0.02
0.05
0.1
P(pk)
ZθJC(t) = r(t) RθJC
RθJC = 2.50°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) ZθJC(t)
0.05
0.2
0.5
1.0
2.0
5.0
t, TIME (ms)
10
20
t1
t2
DUTY CYCLE, D = t1/t2
50
100
200
500
1.0 k
Figure 4. Thermal Response (MJE700T, 800T Series)
2
Motorola Bipolar Power Transistor Device Data
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.07
0.05
0.03
0.05
0.01
SINGLE PULSE
P(pk)
θJC(t) = r(t) θJC
θJC = 3.12°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
0.1
t1
t2
DUTY CYCLE, D = t1/t2
0.02
0.01
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
t, TIME (ms)
10
20
30
50
100
200 300
500
1000
Figure 5. Thermal Response (MJE700, 800 Series)
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
5.0
5.0 ms
100 µs
1.0 ms
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
ACTIVE–REGION SAFE–OPERATING AREA
10
7.0
5.0
dc
TJ = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
MJE702, 703
MJE700
7.0
10
20
30
50
70
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
5.0
100
Figure 6. MJE700 Series
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
1.0 ms
5.0 ms
2.0
0.1
5.0
dc
TJ = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
MJE802, 803
MJE800
7.0
10
20
30
50
70
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
100
10
100 µs
5.0
0.2
100 µs
The data of Figures 6 and 7 are based on T J(pk) = 150_C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided T J(pk)
< 150_C. TJ(pk) may be calculated from the data in Figure 4
or 5. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
10
0.5
1.0 ms
Figure 7. MJE800 Series
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
1.0
5.0 ms
dc
TJ = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
7.0
10
20
30
50
70
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 8. MJE700T
Motorola Bipolar Power Transistor Device Data
100
100 µs
5.0
1.0 ms
5.0 ms
2.0
1.0
0.5
0.2
0.1
5.0
dc
TJ = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
7.0
10
20
30
50
70
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
100
Figure 9. MJE800T
3
PNP
MJE700, T Series
NPN
MJE800, T Series
6.0 k
6.0 k
4.0 k
3.0 k
25°C
2.0 k
– 55°C
1.0 k
800
600
400
300
0.04 0.06
0.1
0.4 0.6
1.0
0.2
IC, COLLECTOR CURRENT (AMP)
2.0
VCE = 3.0 V
TJ = 125°C
4.0 k
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
VCE = 3.0 V
TJ = 125°C
3.0 k
25°C
2.0 k
– 55°C
1.0 k
800
600
400
300
0.04 0.06
4.0
0.1
0.4 0.6
1.0
0.2
IC, COLLECTOR CURRENT (AMP)
2.0
4.0
3.4
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 10. DC Current Gain
TJ = 25°C
3.0
2.6
IC =
0.5 A
1.0 A
2.0 A
4.0 A
2.2
1.8
1.4
1.0
0.6
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
3.4
3.0
TJ = 25°C
IC =
0.5 A
1.0 A
2.0 A
4.0 A
2.6
2.2
1.8
1.4
1.0
0.6
0.1
0.2
0.5
IB, BASE CURRENT (mA)
1.0
2.0
5.0
10
20
50
100
IB, BASE CURRENT (mA)
Figure 11. Collector Saturation Region
2.2
2.2
TJ = 25°C
TJ = 25°C
1.4
1.8
VBE(sat) @ IC/IB = 250
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
1.8
VBE @ VCE = 3.0 V
1.0
VCE(sat) @ IC/IB = 250
0.6
0.2
0.04 0.06
VBE(sat) @ IC/IB = 250
1.4
VBE @ VCE = 3.0 V
1.0
VCE(sat) @ IC/IB = 250
0.6
0.1
0.2
0.4
0.6
1.0
2.0
4.0
0.2
0.04 0.06
IC, COLLECTOR CURRENT (AMP)
0.1
0.2
0.4
0.6
1.0
2.0
IC, COLLECTOR CURRENT (AMP)
Figure 12. “On” Voltages
4
Motorola Bipolar Power Transistor Device Data
4.0
PACKAGE DIMENSIONS
–B–
U
F
Q
–A–
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
M
1 2 3
H
K
J
V
G
S
R
0.25 (0.010)
A
M
M
B
M
D 2 PL
0.25 (0.010)
M
A
M
B
M
DIM
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
INCHES
MIN
MAX
0.425
0.435
0.295
0.305
0.095
0.105
0.020
0.026
0.115
0.130
0.094 BSC
0.050
0.095
0.015
0.025
0.575
0.655
5 _ TYP
0.148
0.158
0.045
0.055
0.025
0.035
0.145
0.155
0.040
–––
MILLIMETERS
MIN
MAX
10.80
11.04
7.50
7.74
2.42
2.66
0.51
0.66
2.93
3.30
2.39 BSC
1.27
2.41
0.39
0.63
14.61
16.63
5 _ TYP
3.76
4.01
1.15
1.39
0.64
0.88
3.69
3.93
1.02
–––
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
CASE 77–08
TO–225AA TYPE
ISSUE V
Motorola Bipolar Power Transistor Device Data
5
PACKAGE DIMENSIONS — CONTINUED
–T–
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
–––
–––
0.080
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
–––
–––
2.04
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 221A–06
TO–220AB
ISSUE Y
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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Motorola Bipolar Power Transistor Device Data
*MJE700/D*
MJE700/D
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