Panasonic MA2ZD18 Silicon epitaxial planar type Datasheet

Schottky Barrier Diodes (SBD)
MA2ZD18
Silicon epitaxial planar type
Unit: mm
1.25±0.1
For super high speed switching
0.7±0.1
0.35±0.1
1
■ Features
1.7±0.1
■ Absolute Maximum Ratings Ta = 25°C
Repetitive peak reverse-voltage
Average forward current
*1
Non-repetitive peak forwardsurge-current *2
Rating
Unit
VR
20
V
VRRM
25
V
IF(AV)
500
mA
IFSM
2
A
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
(0.15)
Reverse voltage (DC)
Symbol
0.16+0.1
–0.06
5°
0 to 0.1
Parameter
2
0.5±0.1
0.4±0.1
5°
2.5±0.2
0 to 0.1
• Low forward voltage VF
• S-Mini type 2-pin package
1 : Anode
2 : Cathode
EIAJ : SC-90A
SMini2-F1 Package
Marking Symbol: 2P
Note) *1: Mounted on a alumina PC board
*2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Reverse current (DC)
IR
VR = 20 V
Forward voltage (DC)
VF
IF = 500 mA
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
Reverse recovery time *
trr
IF = IR = 100 mA
Irr = 10 mA, RL = 100 Ω
Min
Typ
Max
Unit
200
µA
0.42
V
100
pF
7
ns
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 250 MHz
3. *: trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
tp
tr
10%
A
90%
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
Publication date: August 2001
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
SKH00041AED
Output Pulse
t
IF
trr
t
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100 Ω
1
MA2ZD18
IF  V F
IR  V R
104
105
Ta = 125°C
Ta = 125°C
103
102
Reverse current IR (µA)
Forward current IF (mA)
104
75°C
25°C
−20°C
10
1
10−1
75°C
103
102
25°C
10
10−2
10−3
0
0.1
0.2
0.3
0.4
0.5
Forward voltage VF (V)
2
0.6
1
0
5
10
15
20
25
Reverse voltage VR (V)
SKH00041AED
30
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2001 MAR
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