IXYS IXGP30N120B3 Genx3 1200v igbt Datasheet

GenX3TM 1200V
IGBTs
IXGA30N120B3
IXGP30N120B3
IXGH30N120B3
VCES
IC110
VCE(sat)
tfi(typ)
High-Speed Low-Vsat PT
IGBTs 3-20 kHz Switching
=
=
≤£
=
1200V
30A
3.5V
204ns
TO-263 (IXGA)
G
Symbol
Test Conditions
E
Maximum Ratings
VCES
TC = 25°C to 150°C
1200
V
VCGR
TJ = 25°C to 150°C, RGE = 1MΩ
1200
V
VGES
Continuous
± 20
V
VGEM
Transient
± 30
V
IC25
IC110
ICM
TC = 25°C
TC = 110°C
TC = 25°C, 1ms
60
30
150
A
A
A
SSOA
VGE = 15V, TVJ = 125°C, RG = 5Ω
ICM = 60
A
(RBSOA)
Clamped Inductive Load
PC
TC = 25°C
VCE ≤ VCES
TJ
C (Tab)
TO-220 (IXGP)
G
300
W
- 55 ... +150
°C
150
°C
Tstg
- 55 ... +150
°C
TL
1.6mm (0.062 in.) from Case for 10s
300
°C
TSOLD
Plastic Body for 10 seconds
260
°C
Md
Mounting Torque (TO-220 & TO-247)
1.13/10
Nm/lb.in.
Weight
TO-263
TO-220
TO-247
2.5
3.0
6.0
g
g
g
G
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES
VCE = VCES, VGE = 0V
1200
5.0
z
IGES
VCE = 0V, VGE = ±20V
VCE(sat)
IC = 30A, VGE = 15V, Note 1
TJ = 125°C
2.96
2.95
z
z
High Power Density
Low Gate Drive Requirement
±100
nA
3.5
V
V
Applications
z
z
z
z
z
z
© 2009 IXYS CORPORATION, All Rights Reserved
Optimized for Low Conduction and
Switching Losses
Square RBSOA
International Standard Packages
V
100 μA
1 mA
TJ = 125°C
C
= Collector
Tab = Collector
Advantages
V
3.0
C (Tab)
E
Features
z
Characteristic Values
Min.
Typ.
Max.
C
G = Gate
E = Emitter
z
BVCES
C (Tab)
TO-247 (IXGH)
TJM
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
CE
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Welding Machines
DS99730B(10/09)
IXGA30N120B3 IXGP30N120B3
IXGH30N120B3
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
Characteristic Values
Min.
Typ.
Max.
IC = 30A, VCE = 10V, Note 1
11
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
19
S
1750
120
46
pF
pF
pF
87
15
39
nC
nC
nC
16
ns
37
3.47
ns
mJ
Qg
Qge
Qgc
IC = 30A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
Inductive load, TJ = 25°°C
IC = 30A, VGE = 15V
VCE = 0.8 • VCES, RG = 5Ω
Notes 2
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
VCE = 0.8 • VCES,RG = 5Ω
RthJC
RthCS
RthCS
TO-220
TO-247
Notes:
TO-220 (IXGP) Outline
Inductive load, TJ = 125°°C
IC = 30A,VGE = 15V
Notes 2
127
200
ns
204
380
ns
2.16
4.0
mJ
18
38
6.70
216
255
5.10
ns
ns
mJ
ns
ns
mJ
0.50
0.21
0.42 °C/W
°C/W
°C/W
Pins:
1 - Gate
3 - Source
2 - Drain
4 - Drain
TO-247 (IXGH) AD Outline
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
TO-263 (IXGA) Outline
1.
2.
3.
4.
Gate
Collector
Emitter
Collector
Bottom Side
Dim.
Millimeter
Min.
Max.
Inches
Min. Max.
A
b
b2
4.06
0.51
1.14
4.83
0.99
1.40
.160
.020
.045
.190
.039
.055
c
c2
0.40
1.14
0.74
1.40
.016
.045
.029
.055
D
D1
8.64
8.00
9.65
8.89
.340
.280
.380
.320
E
9.65
10.41
.380
.405
E1
e
L
L1
L2
L3
L4
6.22
2.54
14.61
2.29
1.02
1.27
0
8.13
BSC
15.88
2.79
1.40
1.78
0.13
.270
.100
.575
.090
.040
.050
0
.320
BSC
.625
.110
.055
.070
.005
1 = Gate
2 = Collector
3 = Emitter
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXGA30N120B3 IXGP30N120B3
IXGH30N120B3
Fig. 1. Output Characteristics @ T J = 25ºC
Fig. 2. Extended Output Characteristics @ T J = 25ºC
60
200
VGE = 15V
13V
11V
50
VGE = 15V
180
160
9V
IC - Amperes
IC - Amperes
13V
140
40
30
20
120
11V
100
80
9V
60
7V
10
40
7V
20
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
3
6
9
12
18
21
24
27
30
Fig. 4. Dependence of VCE(sat) on
JunctionTemperature
Fig. 3. Output Characteristics @ T J = 125ºC
60
1.6
VGE = 15V
13V
11V
VGE = 15V
I
C
= 60A
I
C
= 30A
I
C
= 15A
1.4
VCE(sat) - Normalized
50
IC - Amperes
15
VCE - Volts
VCE - Volts
40
9V
30
20
1.2
1.0
7V
0.8
10
5V
0.6
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
-50
5.0
-25
0
25
VCE - Volts
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
Fig. 6. Input Admittance
8
60
TJ = 25ºC
7
50
I
C
IC - Amperes
VCE - Volts
6
= 60A
5
30A
4
40
30
TJ = 125ºC
25ºC
- 40ºC
20
3
10
15A
2
0
6
7
8
9
10
11
12
VGE - Volts
© 2009 IXYS CORPORATION, All Rights Reserved
13
14
15
4.5
5.0
5.5
6.0
6.5
7.0
VGE - Volts
7.5
8.0
8.5
9.0
9.5
IXGA30N120B3 IXGP30N120B3
IXGH30N120B3
Fig. 8. Gate Charge
Fig. 7. Transconductance
16
TJ = - 40ºC
24
25ºC
16
VCE = 600V
12
I G = 10mA
I C = 30A
10
VGE - Volts
g f s - Siemens
20
14
125ºC
12
8
6
8
4
4
2
0
0
0
10
20
30
40
50
60
0
70
10
20
30
50
60
70
80
90
Fig. 10. Reverse-Bias Safe Operating Area
Fig. 9. Capacitance
70
10,000
f = 1 MHz
60
50
Cies
1,000
IC - Amperes
Capacitance - PicoFarads
40
QG - NanoCoulombs
IC - Amperes
Coes
100
40
30
20
10
Cres
10
0
5
10
15
20
25
30
35
40
0
200
TJ = 125ºC
RG = 5Ω
dv / dt < 10V / ns
300
400
500
VCE - Volts
600
700
800
900
1000
1100
1200
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
Z (th)JC - ºC / W
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
1
10
IXGA30N120B3 IXGP30N120B3
IXGH30N120B3
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
18
---
16
18
14
C
= 60A
6
I C = 30A
4
2
13
15
17
19
21
23
12
VCE = 960V
10
6
6
8
4
4
6
2
4
0
TJ = 25ºC
20
25
30
6
8
4
6
I C = 30A
2
75
85
95
105
115
380
450
I
350
300
I
50
5
7
9
11
13
td(off) - - - -
25
250
TJ = 25ºC
100
45
IC - Amperes
© 2009 IXYS CORPORATION, All Rights Reserved
50
55
60
325
220
I
C
= 60A, 30A
190
225
160
100
175
130
50
125
150
150
250
VCE = 960V
275
200
200
td(off) - - - -
RG = 5Ω , VGE = 15V
375
t f - Nanoseconds
t f - Nanoseconds
250
TJ = 125ºC
40
23
25
35
45
55
65
75
85
TJ - Degrees Centigrade
95
105
115
100
125
t d(off) - Nanoseconds
300
35
21
280
tf
t d(off) - Nanoseconds
300
30
19
425
350
VCE = 960V
25
17
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
RG = 5Ω , VGE = 15V
20
15
RG - Ohms
400
15
250
= 30A
220
2
125
450
350
C
150
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
tf
C = 60A
340
TJ - Degrees Centigrade
400
550
260
4
0
td(off) - - - -
VCE = 960V
t f - Nanoseconds
10
65
60
t d(off) - Nanoseconds
8
55
55
TJ = 125ºC, VGE = 15V
420
12
I C = 60A
45
50
650
tf
14
VCE = 960V
35
45
460
E on - MilliJoules
E off - MilliJoules
----
RG = 5Ω , VGE = 15V
25
40
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
16
10
35
IC - Amperes
14
Eon
2
0
15
25
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
Eoff
10
TJ = 125ºC
RG - Ohms
12
14
8
10
11
----
8
12
8
E off - MilliJoules
I
10
9
Eon
E on - MilliJoules
14
E on - MilliJoules
12
7
Eoff
12
16
VCE = 960V
5
16
RG = 5Ω , VGE = 15V
TJ = 125ºC , VGE = 15V
14
E off - MilliJoules
Eon -
Eoff
16
20
IXGA30N120B3 IXGP30N120B3
IXGH30N120B3
Fig. 18. Inductive Turn-on
Switching Times vs. Gate Resistance
180
50
110
160
46
100
td(on) - - - -
TJ = 125ºC, VGE = 15V
I
C
100
34
80
30
60
I
C
20
0
5
7
9
11
13
15
17
19
21
23
26
VCE = 960V
80
24
TJ = 125ºC, 25ºC
70
22
20
50
18
40
16
30
14
20
12
18
10
10
14
0
22
= 30A
28
RG = 5Ω , VGE = 15V
60
26
40
td(on) - - - -
25
t d(on) - Nanoseconds
38
t d(on) - Nanoseconds
120
30
tr
90
42
= 60A
VCE = 960V
t r - Nanoseconds
tr
140
t r - Nanoseconds
Fig. 19. Inductive Turn-on
Switching Times vs. Collector Current
8
15
20
25
30
35
40
45
50
55
60
IC - Amperes
RG - Ohms
Fig. 20. Inductive Turn-on
Switching Times vs. Junction Temperature
130
26
tr
110
td(on) - - - 24
RG = 5Ω , VGE = 15V
t r - Nanoseconds
90
22
I C = 60A
70
20
50
18
30
I
C
16
= 30A
10
25
35
45
55
65
75
t d(on) - Nanoseconds
VCE = 960V
85
95
105
115
14
125
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: G_30N120B3(4A)10-06-09-A
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