ACE ACE636B Common drain dual n-channel enhancement mode field effect Datasheet

ACE636B
Common Drain Dual N-Channel Enhancement Mode Field Effect
Description
Advanced trench process technology. High Density Cell Design For Ultra Low On-Resistance. High
Power and Current handing capability. Fully Characterized Avalanche Voltage and Current. Small Surface
Mount Package
Features




VDS 20V, ID =6A
RDS(ON)=22mΩ @VGS=4.5V
RDS(ON)=30mΩ @VGS=2.5V
For a single mosfet
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±12
V
Drain Current (Note 1), Continuous
ID
6
A
Total Power Dissipation (Note1)
PD
650
mW
Operating and Storage Temperature Range TJ/TSTG -55/150
O
C
Note: Mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.
Packaging Type
SOT-23-6L
VER 1.2
1
ACE636B
Common Drain Dual N-Channel Enhancement Mode Field Effect
Ordering information
ACE636B XX + H
Halogen - free
Pb - free
GM : SOT-23-6L
Electrical Characteristics
TA=25℃, unless otherwise noted.
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Off characteristics (Note 2)
Drain-Source Breakdown
Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
V(BR)DSS
VGS=0V, ID=250 uA
20
V
IGSS
VDS=0V,VGS=±12V
±100
uA
IDSS
VDS=20V, VGS=0V
1
uA
1.2
V
On characteristics
Gate Threshold Voltage
VGS(th)
VDS=VGS, IDS=250uA
0.6
Forward Transconductance
GFS
VDS=10V, ID=6A
7
Static Drain-Source
On-Resistance
RDS(ON)
13
S
VGS=4.5V, ID=6A
22
50
VGS=2.5V, ID=5.2A
30
65
0.77
1
mΩ
Drain-Source Diode Characteristics And Maximum Ratings
Diode Forward Voltage
VSD
IS=2A, VGS=0V
0.5
V
Switching characteristics
Turn-On Delay Time
td(on)
Turn-Off Delay Time
td(off)
RG=6Ω, VDD=10V, VGEN=4.5V,
ID=1A
18
nS
25
Dynamic characteristics
Input Capacitance
Ciss
562
Output Capacitance
REVERSE Transfer
Capacitance
Coss
Crss
75
Total Gate Charge
QG
4.86
Gate-Source Charge
QGS
Gate-Drain
QGD
VGS=0V, VDS=8V, f=1MHz
VDS=10V, ID=6A, VGS=4.5V
106
pF
0.92
nC
1.4
Note: 2. Short duration test pulse used to minimize self-heating effect.
VER 1.2
2
ACE636B
Common Drain Dual N-Channel Enhancement Mode Field Effect
Typical Performance Characteristics
VER 1.2
3
ACE636B
Common Drain Dual N-Channel Enhancement Mode Field Effect
Packing Information
SOT-23-6L
Unit: mm
VER 1.2
4
ACE636B
Common Drain Dual N-Channel Enhancement Mode Field Effect
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.2
5
Similar pages