AP40T10GH-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
BVDSS
100V
▼ Single Drive Requirement
RDS(ON)
35mΩ
▼ Fast Switching Characteristic
ID
D
39A
G
▼ RoHS Compliant
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
G
D
S
TO-252(H)
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
39
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
27
A
1
IDM
Pulsed Drain Current
80
A
PD@TC=25℃
Total Power Dissipation
125
W
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
1.2
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃/W
Data and specifications subject to change without notice
1
200805191
AP40T10GH-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=1mA
100
-
-
V
VGS=10V, ID=15A
-
-
35
mΩ
VGS=6V, ID=10A
-
-
38
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=15V, ID=15A
-
14.5
-
S
IDSS
Drain-Source Leakage Current
VDS=80V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=125 C)
VDS=80V ,VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=40A
-
24
40
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=50V
-
5.4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
9.6
-
nC
VDS=50V
-
9
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=40A
-
64
-
ns
td(off)
Turn-off Delay Time
RG=2.5Ω,VGS=10V
-
19
-
ns
tf
Fall Time
RD=1.25Ω
-
75
-
ns
Ciss
Input Capacitance
VGS=0V
-
1310 2100
pF
Coss
Output Capacitance
VDS=25V
-
270
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
85
-
pF
Min.
Typ.
IS=30A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=30A, VGS=0V,
-
60
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
125
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP40T10GH-HF
125
80
o
T C = 175 C
10V
o
T C =25 C
10V
7.0V
ID , Drain Current (A)
ID , Drain Current (A)
100
7.0V
75
6.0V
50
5.0V
6 .0V
40
5.0 V
V G = 4.5 V
20
V G =4.5V
25
60
0
0
0
2
4
6
8
10
0
12
4
Fig 1. Typical Output Characteristics
12
16
Fig 2. Typical Output Characteristics
2.8
50
I D = 10 A
T C =25 o C
I D =15A
V G =10V
2.4
Normalized RDS(ON)
RDS(ON) (mΩ)
8
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
40
30
2.0
1.6
1.2
0.8
0.4
20
2
4
6
8
-50
10
0
V GS , Gate-to-Source Voltage (V)
50
100
150
200
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
20
1.8
T j =175 o C
T j =25 o C
IS(A)
12
Normalized VGS(th) (V)
16
8
1.2
0.6
4
0.0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
200
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP40T10GH-HF
f=1.0MHz
10000
I D = 40 A
V DS = 50 V
10
C iss
8
1000
C (pF)
VGS , Gate to Source Voltage (V)
12
6
4
C oss
100
C rss
2
10
0
0
10
20
1
30
5
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1000
Normalized Thermal Response (R thjc)
1
100
ID (A)
9
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
100us
10
1ms
10ms
100ms
DC
1
o
T C =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
0.1
1
10
100
1000
0.00001
0.0001
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4