PD - 93883B
IRF7467
SMPS MOSFET
HEXFET® Power MOSFET
Applications
l High Frequency DC-DC Isolated
Converters with Synchronous Rectification
for Telecom and Industrial use
l
VDSS
RDS(on) max
30V
12mΩ
ID
11A
High Frequency Buck Converters for
Computer Processor Power
Benefits
Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
l
A
A
D
1
8
S
2
7
D
S
3
6
D
G
4
5
D
S
SO-8
T o p V ie w
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
Units
30
± 12
11
9.0
90
2.5
1.6
0.02
-55 to + 150
V
V
A
W
W
W/°C
°C
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
Max.
Units
–––
–––
20
50
°C/W
Notes through are on page 8
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1
3/25/01
IRF7467
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Min.
30
–––
–––
Static Drain-to-Source On-Resistance –––
–––
Gate Threshold Voltage
0.6
–––
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Typ.
–––
0.029
9.4
10.6
17
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
12
VGS = 10V, ID = 11A
13.5 mΩ VGS = 4.5V, ID = 9.0A
35
VGS = 2.8V, ID = 5.5A
2.0
V
VDS = VGS, ID = 250µA
20
VDS = 16V, VGS = 0V
µA
100
VDS = 16V, VGS = 0V, T J = 125°C
200
VGS = 12V
nA
-200
VGS = -12V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
28
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
21
6.7
5.8
21
7.8
2.5
19
4.0
2530
706
46
Max. Units
Conditions
–––
S
VDS = 16V, ID = 9.0A
32
ID = 9.0A
10
nC
VDS = 15V
8.7
VGS = 4.5V
29
VGS = 0V, VDS = 15V
–––
VDD = 15V,
–––
ID = 9.0A
ns
–––
RG = 1.8Ω
–––
VGS = 4.5V
–––
VGS = 0V
–––
VDS = 15V
–––
pF
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
Typ.
Max.
Units
–––
–––
223
11
mJ
A
Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Qrr
trr
Qrr
Reverse
Reverse
Reverse
Reverse
2
Recovery Time
Recovery Charge
Recovery Time
Recovery Charge
Min. Typ. Max. Units
–––
2.3
–––
90
––– 0.79
––– 0.65
––– 40
––– 56
––– 43
––– 64
1.3
–––
60
84
65
96
–––
A
–––
V
ns
nC
ns
nC
Conditions
D
MOSFET symbol
showing the
G
integral reverse
S
p-n junction diode.
TJ = 25°C, IS = 9.0A, VGS = 0V
TJ = 125°C, IS = 9.0A, VGS = 0V
TJ = 25°C, IF = 9.0A, V R= 15V
di/dt = 100A/µs
TJ = 125°C, IF = 9.0A, VR=15V
di/dt = 100A/µs
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IRF7467
1000
1000
VGS
15.0V
10.0V
4.50V
3.00V
2.70V
2.50V
2.25V
BOTTOM 2.00V
VGS
15.0V
10.0V
4.50V
3.00V
2.70V
2.50V
2.25V
BOTTOM 2.00V
100
10
1
2.0V
20µs PULSE WIDTH
Tj = 25°C
TOP
ID , Drain-to-Source Current (A)
ID , Drain-to-Source Current (A)
TOP
100
10
2.0V
1
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 150 ° C
10
TJ = 25 ° C
1
V DS = 15V
20µs PULSE WIDTH
2.4
2.8
3.2
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
100
0.1
2.0
1
VDS , Drain-to-Source Voltage (V)
3.6
ID = 11A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7467
VGS =
Ciss =
Crss =
Coss =
Ciss
2400
1600
Coss
800
8
6
4
2
Crss
1
ID = 9.0A
VDS = 24V
VDS = 15V
0
0
10
0
100
8
16
24
32
40
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 150 ° C
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
C, Capacitance (pF)
3200
10
0V,
f = 1MHz
Cgs + Cgd , Cds SHORTED
Cgd
Cds + Cgd
VGS , Gate-to-Source Voltage (V)
4000
10
100
TJ = 25 ° C
1
0.1
0.3
V GS = 0 V
0.6
0.9
1.2
1.5
1.8
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
2.1
10us
100us
10
1ms
TC = 25 ° C
TJ = 150 ° C
Single Pulse
1
0.1
10ms
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7467
12
RD
VDS
VGS
10
D.U.T.
I D , Drain Current (A)
RG
+
- VDD
8
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
Fig 10a. Switching Time Test Circuit
4
VDS
2
90%
0
25
50
75
100
125
150
TC , Case Temperature ( °C)
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
100
Thermal Response (Z thJA )
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
P DM
0.1
0.01
0.00001
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
R DS ( on ) , Drain-to-Source On Resistance ( Ω )
IRF7467
R DS(on) , Drain-to -Source On Resistance ( Ω )
0.020
0.019
0.018
0.017
0.016
0.015
VGS = 4.5V
0.014
0.013
0.012
VGS = 10V
0.011
0.010
0
20
40
60
80
0.020
0.018
0.016
0.014
ID = 11A
0.012
0.010
2.0
100
4.0
6.0
8.0
10.0
12.0
14.0
16.0
VGS, Gate -to -Source Voltage (V)
ID , Drain Current ( A )
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
QG
VGS
QGS
.3µF
D.U.T.
+
V
- DS
QGD
600
VG
EAS , Single Pulse Avalanche Energy (mJ)
50KΩ
.2µF
12V
VGS
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V (B R )D S S
tp
L
VD S
D.U .T
RG
IA S
20 V
tp
IAS
DRIVER
+
V
- DD
0.0 1 Ω
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
A
TOP
500
BOTTOM
ID
4.0A
7.2A
9.0A
400
300
200
100
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
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IRF7467
SO-8 Package Details
D IM
D
-B -
5
8
E
-A -
1
7
2
5
A
6
3
e
6X
5
H
0.2 5 (.0 10 )
4
M
A M
θ
e1
K x 45 °
-C-
0 .10 (.00 4)
B 8X
0 .25 (.01 0)
A1
L
8X
6
C
8X
M C A S B S
N O TE S :
1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2.
2 . C O N TRO L LIN G D IM EN SIO N : IN C H .
3 . D IM EN SIO N S A RE SH O W N IN M ILLIM E TE R S (IN C HE S).
4 . O U TLIN E CO N F O RM S TO JED E C O U TLINE M S -0 12 AA .
5 D IM E NS IO N D O ES N O T IN C LU D E M O LD PR O TR US IO N S
M O LD P R O TR U SIO NS N O T TO EXCE ED 0 .2 5 (.00 6).
6 D IM E NS IO N S IS TH E LE N G TH O F L EA D FO R SO L DE R IN G TO A SU B STRA TE..
M IN
M AX
.0532
.0688
1 .35
1 .75
.0040
.0098
0 .10
0 .25
B
.014
.018
0 .36
0 .46
C
.0 075
.0 098
0 .19
0.25
D
.1 89
.1 96
4 .80
4.98
E
.150
.157
3 .81
3 .99
e1
A
M IL LIM E T E R S
MAX
A1
e
θ
IN C H E S
M IN
.050 B A S IC
1.2 7 B A S IC
.025 B A S IC
0.6 35 B A S IC
H
.2 284
.2 440
K
.011
.019
0 .28
5 .80
0 .48
6.20
L
0 .16
.050
0 .41
1.27
θ
0°
8°
0°
8°
R E CO M M E ND E D F O O TP R IN T
0 .72 (.02 8 )
8X
6 .46 ( .25 5 )
1 .78 (.07 0)
8X
1.27 ( .0 50 )
3X
SO-8 Part Marking
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7
IRF7467
SO-8 Tape and Reel
TER M IN AL N UM B ER 1
1 2.3 ( .484 )
1 1.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
F EE D D IRE C TIO N
N OT E S :
1 . CO NT RO L L ING DIM E NSIO N : M IL L IM E T E R .
2 . AL L DIM E NS ION S ARE SHO W N IN M ILL IM E TER S (INC HE S ).
3 . OU TL IN E CO N FO RM S T O E IA -4 8 1 & E IA -5 4 1 .
33 0.00
(12.992)
M AX .
14.4 0 ( .566 )
12.4 0 ( .488 )
N O T ES :
1 . CO NT RO LL ING D IM EN SIO N : M ILLIME TER .
2 . O U TLIN E C O NF O RM S T O E IA-48 1 & E IA -54 1.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 5.5mH
Pulse width ≤ 300µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t<10 sec
RG = 25Ω, IAS = 9.0A.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 3/01
8
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