HDSEMI BAT42WS Sod323 plastic-encapsulate diode Datasheet

BA T42WS/BAT43WS
SOD323 Plastic-Encapsulate Diodes
Small Signal Fast Switching Diodes
Features
● Low Forward Voltage Drop
● Fast Switching Time
● Surface Mount Package Ideally Suited for Automatic Insertion
SOD3 23
Applications
● Extreme fast switches
Marking
● BAT42WS:X8
● BAT43WS:Y9
Parameter
Symbol
Value
Unit
VRRM
30
V
Reverse Voltage
VR
30
V
Average Rectified Output Current
IO
100
mA
Forward Continuous Current
IFM
200
mA
Repetitive Peak Forward Current at t < 1 s
IFRM
500
mA
Non-repetitive Peak Forward Surge Current at t < 10 ms
IFSM
2
A
Power Dissipation
Ptot
200
mW
Thermal Resistance, Junction to Ambient
RθJA
625
Tj
- 55 to + 125
O
TStg
- 55 to + 125
O
Repetitive Peak Reverse Voltage
Junction Temperature
Storage Temperature Range
C/W
O
C
C
Electrical Characteristics (TA=25℃ unless otherwise noted)
Parameter
Reverse Breakdown Voltage
at IR = 100 μA
Reverse Current
at VR = 25 V
Forward Voltage
at IF = 200 mA
at IF = 10 mA
at IF = 50 mA
at IF = 2 mA
at IF = 15 mA
BAT42WS
BAT42WS
BAT43WS
BAT43WS
Symbol
Min.
Max.
Unit
V(BR)R
30
-
V
IR
-
500
nA
0.26
-
1
0.4
0.65
0.33
0.45
VF
V
Total Capacitance
at VR = 1 V, f = 1 MHz
CT
-
10
pF
Reverse Recovery Time
at IF = IR = 10 mA, IRR = 0.1 X IR, RL = 100 Ω
trr
-
5
ns
High Diode Semiconductor
1
Typical Characteristics
High Diode Semiconductor
2
SOD323 Package Outline Dimensions
SOD323 Suggested Pad Layout
JSHD
JSHD
High Diode Semiconductor
3
Reel Taping Specifications For Surface Mount Devices-SOD323
1.46
2.9
1.25
High Diode Semiconductor
4
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