CYSTEKEC MTN13N50E3 N-channel enhancement mode power mosfet Datasheet

CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C405E3
Issued Date : 2008.12.01
Revised Date :
Page No. : 1/8
BVDSS : 500V
RDS(ON) : 0.48Ω
MTN13N50E3
ID : 13A
Description
The MTN13N50E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications
Features
• BVDSS=550V typically @ Tj=150℃
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Applications
• Power Factor Correction
• LCD TV Power
• Full and Half Bridge Power
Symbol
Outline
MTN13N50E3
TO-220
G:Gate
D:Drain
S:Source
MTN13N50E3
G D S
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C405E3
Issued Date : 2008.12.01
Revised Date :
Page No. : 2/8
Absolute Maximum Ratings (TC=25°C)
Parameter
Symbol
Drain-Source Voltage (Note 1)
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
ID
Continuous Drain Current @TC=100°C
Pulsed Drain Current @ VGS=10V (Note 2)
IDM
Single Pulse Avalanche Energy @ L=7.2mH, ID=12.2 Amps
EAS
Avalanche Current
(Note 2)
IAR
Peak Diode Recovery dv/dt (Note 3)
dv/dt
Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm)
TL
from case for 10 seconds
Maximum Temperature for Soldering @ Package Body for 10
TPKG
seconds
Pd
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
Tj, Tstg
Note : *1. TJ=+25℃ to +150℃.
*2. Repetitive rating; pulse width limited by maximum junction temperature.
*3. ISD=10A, dI/dt<100A/μs, VDD<BVDSS, TJ=+150℃.
Limits
Unit
500
±30
13
8
52
250
13
3.0
V
V
A
A
A
mJ
A
V/ns
300
°C
260
°C
195
1.72
-55~+150
W
W/°C
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
MTN13N50E3
Symbol
Rth,j-c
Rth,j-a
Value
0.64
62.5
Unit
°C/W
°C/W
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C405E3
Issued Date : 2008.12.01
Revised Date :
Page No. : 3/8
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Static
BVDSS
500
BVDSS
∆BVDSS/∆Tj
VGS(th)
2.0
*GFS
IGSS
IDSS
IDSS
*RDS(ON)
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Source-Drain Diode
*VSD
*IS
*ISM
*trr
*Qrr
-
Typ.
Max.
Unit
Test Conditions
550
0.5
15
0.38
4.0
±100
20
200
0.48
V
V
V/°C
V
S
nA
μA
μA
Ω
VGS=0, ID=250μA
VGS=0, ID=250μA, Tj=150°C
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =15V, ID=13A
VGS=±30
VDS =500V, VGS =0
VDS =400V, VGS =0, Tj=125°C
VGS =10V, ID=7.8A
40
10
15
16
30
48
34
2222
180
17
-
nC
ID=13A, VDD=250V, VGS=10V
ns
VDD=250V, ID=13A, VGS=10V,
RG=9.1Ω
pF
VGS=0V, VDS=25V, f=1MHz
392
3529
1.5
13
52
-
V
IS=13A, VGS=0V
A
VD=VG=0, VS=1.3V
ns
nC
VGS=0, IF=13A, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
MTN13N50E3
MTN13N50E3
Package
TO-220
(RoHS compliant)
Shipping
Marking
50 pcs/tube, 20 tubes/box, 4 boxes / carton
13N50
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C405E3
Issued Date : 2008.12.01
Revised Date :
Page No. : 4/8
Characteristic Curves
MTN13N50E3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C405E3
Issued Date : 2008.12.01
Revised Date :
Page No. : 5/8
Characteristic Curves(Cont.)
MTN13N50E3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C405E3
Issued Date : 2008.12.01
Revised Date :
Page No. : 6/8
Test Circuit and Waveforms
MTN13N50E3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C405E3
Issued Date : 2008.12.01
Revised Date :
Page No. : 7/8
Test Circuit and Waveforms(Cont.)
MTN13N50E3
CYStek Product Specification
Spec. No. : C405E3
Issued Date : 2008.12.01
Revised Date :
Page No. : 8/8
CYStech Electronics Corp.
TO-220AB Dimension
A
Marking:
B
D
E
C
H
Device Name
K
M
I
13N50
□□□□
Date Code
3
G
N
2
1
4
O
P
3-Lead TO-220AB Plastic Package
CYStek Package Code: E3
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
*: Typical
Inches
Min.
Max.
0.2441 0.2598
0.3386 0.3543
0.1732 0.1890
0.0492 0.0571
0.0142 0.0197
0.3858 0.4094
*0.6398
DIM
A
B
C
D
E
G
H
Millimeters
Min.
Max.
6.20
6.60
8.60
9.00
4.40
4.80
1.25
1.45
0.36
0.50
9.80
10.40
*16.25
DIM
I
K
M
N
O
P
Inches
Min.
Max.
*0.1508
0.0299 0.0394
0.0461 0.0579
*0.1000
0.5217 0.5610
0.5787 0.6024
Millimeters
Min.
Max.
*3.83
0.76
1.00
1.17
1.47
*2.54
13.25
14.25
14.70
15.30
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: KFC ; pure tin plated
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN13N50E3
CYStek Product Specification
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