PHILIPS CGY2032TS Dect 500 mw power amplifier Datasheet

INTEGRATED CIRCUITS
DATA SHEET
CGY2032TS
DECT 500 mW power amplifier
Product specification
Supersedes data of 1998 Nov 23
File under Integrated Circuits, IC17
1999 Jul 21
Philips Semiconductors
Product specification
DECT 500 mW power amplifier
CGY2032TS
FEATURES
APPLICATIONS
• Power Amplifier (PA) overall efficiency 55%
• 1.88 to 1.9 GHz transceivers for DECT applications
• 27.5 dBm saturated output power at 3.2 V
• 2 GHz transceivers [Personal Handy phone System
(PHS), Digital Cellular System (DCS) and Personal
Communication Services (PCS)].
• 0 dBm input power
• 40 dB linear gain
• Operation without negative supply
GENERAL DESCRIPTION
• Wide operating temperature range −30 to +85 °C
The CGY2032TS is a GaAs Monolithic Microwave
Integrated Circuit (MMIC) power amplifier specifically
designed to operate from 3.6 V battery supply.
No negative supply voltage is required for operation.
• SSOP16 package.
QUICK REFERENCE DATA
PARAMETER(1)
SYMBOL
MIN.
TYP.
MAX.
UNIT
VDD
positive supply voltage
−
3.2
−
V
IDD
positive peak supply current
−
350
−
mA
Po
output power
−
27.5
−
dBm
Tamb
ambient temperature
−30
−
+85
°C
Note
1. For conditions, see Chapters “AC characteristics” and “DC characteristics”.
ORDERING INFORMATION
PACKAGE
TYPE
NUMBER
NAME
CGY2032TS
SSOP16
DESCRIPTION
VERSION
plastic shrink small outline package; 16 leads; body width 4.4 mm
BLOCK DIAGRAM
handbook, halfpage
VDD1
8
VDD2 VDD3
5
1
CGY2032TS
RFI
11
16
15
10
2, 3, 4
12, 13, 14
6, 7
MGK735
GND1
GND2 GND3
Fig.1 Block diagram.
1999 Jul 21
2
RFO
OPM
SOT369-1
Philips Semiconductors
Product specification
DECT 500 mW power amplifier
CGY2032TS
PINNING
SYMBOL
PIN
DESCRIPTION
VDD3
1
third stage supply voltage
GND3
2
third stage ground supply
GND3
3
third stage ground supply
GND3
4
third stage ground supply
VDD2
5
second stage supply voltage
GND2
6
second stage ground supply
GND2
7
second stage ground supply
VDD1
8
first stage supply voltage
VDD2 5
12 GND3
n.c.
9
not connected
GND2 6
11 RFI
GND1
10
first stage ground supply
GND2 7
10 GND1
RFI
11
PA input
VDD1 8
9
GND3
12
third stage ground supply
GND3
13
third stage ground supply
GND3
14
third stage ground supply
OPM
15
output pre-matching
RFO
16
PA output
handbook, halfpage
VDD3 1
16 RFO
GND3 2
15 OPM
GND3 3
14 GND3
GND3 4
13 GND3
CGY2032TS
n.c.
MGK734
Fig.2 Pin configuration.
FUNCTIONAL DESCRIPTION
This switch can also be used to vary the actual supply
voltage applied to the amplifier and hence, control the
output power.
Amplifier
The CGY2032TS is a 3-stage GaAs power amplifier
capable of delivering 500 mW (typ.) at 1.9 GHz into a 50 Ω
load. Each amplifier stage has an open-drain
configuration. The drains have to be loaded externally by
adequate reactive circuits which must also provide a DC
path to the supply.
This device is specifically designed to work with a duty
factor of 50% and can work up to 100% with good thermal
performance printed-circuit boards.
Biasing
Internal biasing is provided inside the amplifier for
class AB operation.
The amplifier can be switched off by means of a single
external PNP or PMOS series switch connected between
the battery and the amplifier drains.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
−
5.2
V
−
150
°C
−
450
mW
input power
−
15
dBm
storage temperature
−55
+125
°C
VDD
operating supply voltage
Tj(max)
maximum operating junction temperature
Ptot
total power dissipation
Pi
Tstg
note 1
note 2
Notes
1. On Philips evaluation board.
2. On Philips evaluation board, Ptot maximum value is 800 mW.
1999 Jul 21
MIN.
3
Philips Semiconductors
Product specification
DECT 500 mW power amplifier
CGY2032TS
HANDLING
Do not operate or store near strong electrostatic fields. Meets class 1 ESD test requirements [Human Body Model
(HBM)], in accordance with “MIL STD 883C - method 3015”.
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
VALUE
UNIT
145
K/W
in free air; note 1
Note
1. On Philips evaluation board, Rth(j-a) value is typically 80 K/W.
DC CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Pins VDD1, VDD2 and VDD3
VDD
positive supply voltage
IDD
positive peak supply current
VDD = 3.2 V
1.8
3.2
4.2
V
−
−
800
mA
AC CHARACTERISTICS
VDD = 3.2 V; fRF = 1900 MHz; Pi = 0 dBm; Tamb = 25 °C; duty factor δ = 50%; 50 Ω impedance system; measured and
guaranteed on the CGY2032TS evaluation board; the circuit diagram is shown in Fig.5.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Pi
input power
−5
0
+5
dBm
δ
duty factor
−
50
100
%
Po
output power
26.5
27.5
29
dBm
IDD
total drain current
−
−
500
mA
η
efficiency
−
55
−
%
Pleak
RF leakage to output in power off state
−
−40
−35
dBm
H2
second harmonic level
−
−
−30
dBc
H3
third harmonic level
−
−
−35
dBc
Stab
stability (spurious levels)
−
−60
−
dBc
VDD = 0 V
note 1
Note
1. The device is adjusted to provide nominal value of load power into a 50 Ω load. The device is switched off and a 6 : 1
load replaces the 50 Ω load. The device is switched on and the phase of the 6 : 1 load is varied
360 electrical degrees during a 60 seconds test period.
1999 Jul 21
4
Philips Semiconductors
Product specification
DECT 500 mW power amplifier
CGY2032TS
FCA009
30
100
handbook, full pagewidth
Po
(dBm)
η
power output
(%)
26
80
22
60
efficiency
18
40
14
20
10
−20
−15
−10
0
−5
0
5
Pi (dBm)
10
Fig.3 Typical output power and efficiency versus input power at VDD = 3.2 V.
MGK738
30
handbook, full pagewidth
100
η
Po
(dBm)
(%)
power output
26
80
22
60
efficiency
18
40
14
20
10
0
0.5
1
1.5
2
2.5
3
3.5
4
VDD (V)
Fig.4 Typical output power and efficiency versus supply voltage at Pi = 0 dBm.
1999 Jul 21
5
0
4.5
Philips Semiconductors
Product specification
DECT 500 mW power amplifier
CGY2032TS
APPLICATION INFORMATION
The CGY2032TS is operated and tested in accordance with the circuit diagram shown in Fig.5. Supply voltage switching
is achieved by a single bipolar PNP transistor.
handbook, full pagewidth
Vbat
220 Ω
10 µF
BC807
10 kΩ
control
BC849C
6.8 pF
VDD
10 nF
47 kΩ
33 pF
TRL1(1)
VDD1
8
RFI
22 pF
6.8 pF
TRL2(2)
TRL3(3)
VDD2
5
VDD3
1
RFO
CGY2032TS
11
10
6, 7
GND1
GND2
2, 3, 4
12, 13, 14
GND3
16
1.2 pF
15
OPM
TRL4(4)
MGK736
Thickness: 0.8 mm; substrate: FR4; εr = 4.7.
(1) TRL1: width = 500 µm; length = 10 mm.
(2) TRL2: width = 500 µm; length = 3000 µm.
(3) TRL3: width = 500 µm; length = 7 mm.
(4) TRL4: adjusted for optimum matching; width = 500 µm; length = 1 to 3 mm.
Fig.5 Evaluation board circuit diagram.
1999 Jul 21
6
Philips Semiconductors
Product specification
DECT 500 mW power amplifier
CGY2032TS
PACKAGE OUTLINE
SSOP16: plastic shrink small outline package; 16 leads; body width 4.4 mm
D
SOT369-1
E
A
X
c
y
HE
v M A
Z
9
16
Q
A2
A
(A 3)
A1
pin 1 index
θ
Lp
L
1
8
detail X
w M
bp
e
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (1)
e
HE
L
Lp
Q
v
w
y
Z (1)
θ
mm
1.5
0.15
0.00
1.4
1.2
0.25
0.32
0.20
0.25
0.13
5.30
5.10
4.5
4.3
0.65
6.6
6.2
1.0
0.75
0.45
0.65
0.45
0.2
0.13
0.1
0.48
0.18
10
0o
Note
1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
94-04-20
95-02-04
SOT369-1
1999 Jul 21
EUROPEAN
PROJECTION
7
o
Philips Semiconductors
Product specification
DECT 500 mW power amplifier
CGY2032TS
SOLDERING
If wave soldering is used the following conditions must be
observed for optimal results:
Introduction to soldering surface mount packages
• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering is not always suitable
for surface mount ICs, or for printed-circuit boards with
high population densities. In these situations reflow
soldering is often used.
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
Reflow soldering
The footprint must incorporate solder thieves at the
downstream end.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Wave soldering
Manual soldering
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
To overcome these problems the double-wave soldering
method was specifically developed.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
1999 Jul 21
8
Philips Semiconductors
Product specification
DECT 500 mW power amplifier
CGY2032TS
Suitability of surface mount IC packages for wave and reflow soldering methods
SOLDERING METHOD
PACKAGE
REFLOW(1)
WAVE
BGA, SQFP
not suitable
HLQFP, HSQFP, HSOP, SMS
not
PLCC(3), SO, SOJ
suitable
LQFP, QFP, TQFP
SSOP, TSSOP, VSO
suitable
suitable(2)
suitable
suitable
not
recommended(3)(4)
suitable
not
recommended(5)
suitable
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.
2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).
3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Jul 21
9
Philips Semiconductors
Product specification
DECT 500 mW power amplifier
CGY2032TS
NOTES
1999 Jul 21
10
Philips Semiconductors
Product specification
DECT 500 mW power amplifier
CGY2032TS
NOTES
1999 Jul 21
11
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© Philips Electronics N.V. 1999
SCA 67
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Printed in The Netherlands
465008/04/pp12
Date of release: 1999
Jul 21
Document order number:
9397 750 05971
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