JMNIC BD895 Silicon pnp transistor Datasheet

Power Transistors
www.jmnic.com
BD895
Silicon PNP Transistors
Features
BCE
﹒With TO-220 package
﹒With general-purpose and amplifier applications
Absolute Maximum Ratings Tc=25
SYMBOL
RATING
UNIT
VCBO
Collector to base voltage
PARAMETER
45
V
VCEO
Collector to emitter voltage
45
V
VEBO
Emitter to base voltage
5.0
V
IB
Base collector current
IC
Collector current
8.0
A
PC
Collector power dissipation
70
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TO-220
Electrical Characteristics Tc=25
SYMBOL
MAX
UNIT
ICBO
Collector-base cut-off current
VCB=45V; IE=0
0.2
mA
IEBO
Emitter-base cut-off current
VEB=5.0V; IC=0
2.0
mA
ICEO
Collector-emitter cut-off current
VCE=45V; IB=0
0.5
mA
VCBO
Collector-base breakdown voltage
V(BR)ceo
VEBO
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltages
VCE(sat-2)
Collector-emitter saturation voltages
hFE-1
Forward current transfer ratio
hFE-2
Forward current transfer ratio
hFE-3
Forward current transfer ratio
VBE(on)2
IC=0.1A; IB=0
MIN
TYPE
45
V
Emitter-base breakdown voltage
VCE(sat-1)
VBE(on)1
CONDITIONS
Base-emitter on voltages
Base-emitter on voltages
fT
Transition frepuency
Cob
Output Capacitance
IC=3A; IB=12mA
IC=3A; VCE=3V
IC=3A; VCE=3V
2.5
V
2.5
V
750
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