ON NTD3055L170T4G Power mosfet Datasheet

NTD3055L170,
NVD3055L170
Power MOSFET
9.0 A, 60 V, Logic Level, N−Channel
DPAK/IPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
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9.0 AMPERES, 60 VOLTS
RDS(on) = 170 mW
• NVD Prefix for Automotive and Other Applications Requiring
•
N−Channel
G
Typical Applications
•
•
•
•
D
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free Devices
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
S
4
4
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
1
1 2
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
60
Vdc
Drain−to−Gate Voltage (RGS = 10 MW)
VDGR
60
Vdc
VGS
VGS
±15
±20
ID
ID
9.0
3.0
27
Apk
1 − Gate
28.5
0.19
2.1
1.5
W
W/°C
W
W
2 − Drain
−55 to
175
°C
30
mJ
Gate−to−Source Voltage
− Continuous
− Non−repetitive (tpv10 ms)
Drain Current
− Continuous @ TA = 25°C
− Continuous @ TA = 100°C
− Single Pulse (tpv10 ms)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1)
Total Power Dissipation @ TA = 25°C (Note 2)
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc,
L = 1.0 mH, IL(pk) = 7.75 A, VDS = 60 Vdc)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
Vdc
Adc
IDM
PD
TJ, Tstg
EAS
5.2
71.4
100
TL
260
DPAK
CASE 369C
(Surface Mounted)
STYLE 2
°C
2
3
IPAK
CASE 369D
(Straight Lead)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
3 − Source
1 − Gate
2 − Drain
°C/W
RqJC
RqJA
RqJA
3
3 − Source
A
Y
WW
3170L
G
AYWW
31
70LG
AYWW
31
70LG
4
Drain
4
Drain
= Assembly Location*
= Year
= Work Week
= Device Code
= Pb−Free Package
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
1. When surface mounted to an FR4 board using 0.5 sq in pad size.
2. When surface mounted to an FR4 board using minimum recommended pad size. See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 6
1
Publication Order Number:
NTD3055L170/D
NTD3055L170, NVD3055L170
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Drain−to−Source Breakdown Voltage (Note 3)
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Min
Typ
Max
Unit
60
−
−
53.6
−
−
−
−
−
−
1.0
10
−
−
±100
1.0
−
1.7
4.2
2.0
−
−
153
170
−
−
1.8
1.3
2.1
−
gFS
−
7.3
−
mhos
pF
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)
IGSS
Vdc
mV/°C
mAdc
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain−to−Source On−Resistance (Note 3)
(VGS = 5.0 Vdc, ID = 4.5 Adc)
RDS(on)
Static Drain−to−Source On−Voltage (Note 3)
(VGS = 5.0 Vdc, ID = 9.0 Adc)
(VGS = 5.0 Vdc, ID = 4.5 Adc, TJ = 150°C)
VDS(on)
Forward Transconductance (Note 3) (VDS = 8.0 Vdc, ID = 6.0 Adc)
Vdc
mV/°C
mW
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Transfer Capacitance
Ciss
−
195
275
Coss
−
70
100
Crss
−
29
42
td(on)
−
9.7
20
tr
−
69
150
td(off)
−
10
20
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 30 Vdc, ID = 9.0 Adc,
VGS = 5.0 Vdc,
RG = 9.1 W) (Note 3)
Fall Time
Gate Charge
(VDS = 48 Vdc, ID = 9.0 Adc,
VGS = 5.0 Vdc) (Note 3)
ns
tf
−
38
80
QT
−
4.7
10
Q1
−
1.4
−
Q2
−
2.9
−
VSD
−
−
0.98
0.85
1.25
−
Vdc
trr
−
29.8
−
ns
ta
−
17.6
−
tb
−
12.2
−
QRR
−
0.031
−
nC
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 9.0 Adc, VGS = 0 Vdc) (Note 3)
(IS = 9.0 Adc, VGS = 0 Vdc, TJ = 150°C)
Reverse Recovery Time
(IS = 9.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms) (Note 3)
Reverse Recovery Stored Charge
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTD3055L170, NVD3055L170
16
20
VDS ≥ 10 V
16
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
VGS = 10 V
5V
8V
6V
12
4V
8
3.5 V
4
3V
12
8
4
TJ = 25°C
TJ = −55°C
TJ = 100°C
1
3
2
4
5
6
7
8
TJ = 100°C
0.2
TJ = 25°C
0.15
TJ = −55°C
0.1
0.05
2
4
4.5
5
5.5
Figure 2. Transfer Characteristics
0.25
2.2
3.5
3
Figure 1. On−Region Characteristics
0.3
4
2.5
2
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
VGS = 10 V
0
1.5
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
0
1
0.35
6
8
10
12
14
16
18
6
0.35
VGS = 15 V
0.3
0.25
TJ = 100°C
0.2
TJ = 25°C
0.15
0.1
TJ = −55°C
0.05
0
4
12
8
16
20
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
24
1000
VGS = 0 V
ID = 4.5 A
VGS = 5 V
1.8
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
1.6
1.4
1.2
1
TJ = 150°C
100
TJ = 125°C
10
TJ = 100°C
0.8
0.6
−50 −25
1
0
25
50
75
100
125
150
175
0
10
20
30
40
50
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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3
60
NTD3055L170, NVD3055L170
POWER MOSFET SWITCHING
Switching behavior is most easily modeled and predicted
by recognizing that the power MOSFET is charge
controlled. The lengths of various switching intervals (Dt)
are determined by how fast the FET input capacitance can
be charged by current from the generator.
The published capacitance data is difficult to use for
calculating rise and fall because drain−gate capacitance
varies greatly with applied voltage. Accordingly, gate
charge data is used. In most cases, a satisfactory estimate of
average input current (IG(AV)) can be made from a
rudimentary analysis of the drive circuit so that
t = Q/IG(AV)
The capacitance (Ciss) is read from the capacitance curve at
a voltage corresponding to the off−state condition when
calculating td(on) and is read at a voltage corresponding to the
on−state when calculating td(off).
At high switching speeds, parasitic circuit elements
complicate the analysis. The inductance of the MOSFET
source lead, inside the package and in the circuit wiring
which is common to both the drain and gate current paths,
produces a voltage at the source which reduces the gate drive
current. The voltage is determined by Ldi/dt, but since di/dt
is a function of drain current, the mathematical solution is
complex. The MOSFET output capacitance also
complicates the mathematics. And finally, MOSFETs have
finite internal gate resistance which effectively adds to the
resistance of the driving source, but the internal resistance
is difficult to measure and, consequently, is not specified.
The resistive switching time variation versus gate
resistance (Figure 9) shows how typical switching
performance is affected by the parasitic circuit elements. If
the parasitics were not present, the slope of the curves would
maintain a value of unity regardless of the switching speed.
The circuit used to obtain the data is constructed to minimize
common inductance in the drain and gate circuit loops and
is believed readily achievable with board mounted
components. Most power electronic loads are inductive; the
data in the figure is taken with a resistive load, which
approximates an optimally snubbed inductive load. Power
MOSFETs may be safely operated into an inductive load;
however, snubbing reduces switching losses.
During the rise and fall time interval when switching a
resistive load, VGS remains virtually constant at a level
known as the plateau voltage, VSGP. Therefore, rise and fall
times may be approximated by the following:
tr = Q2 x RG/(VGG − VGSP)
tf = Q2 x RG/VGSP
where
VGG = the gate drive voltage, which varies from zero to VGG
RG = the gate drive resistance
and Q2 and VGSP are read from the gate charge curve.
During the turn−on and turn−off delay times, gate current is
not constant. The simplest calculation uses appropriate
values from the capacitance curves in a standard equation for
voltage change in an RC network. The equations are:
td(on) = RG Ciss In [VGG/(VGG − VGSP)]
td(off) = RG Ciss In (VGG/VGSP)
700
VDS = 0 V
VGS = 0 V
TJ = 25°C
C, CAPACITANCE (pF)
600
500
Ciss
400
300
Crss
Ciss
200
Coss
100
Crss
0
10
0
5
VGS
10
5
15
20
25
VDS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
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4
1000
6
QT
5
Q2
Q1
4
t, TIME (ns)
VGS , GATE−TO−SOURCE VOLTAGE (VOLTS)
NTD3055L170, NVD3055L170
3
VGS
2
100
tr
tf
td(off)
10
td(on)
1
VDS = 30 V
ID = 9 A
VGS = 5 V
ID = 9 A
TJ = 25°C
0
1
0
1
2
3
4
QG, TOTAL GATE CHARGE (nC)
5
1
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
10
RG, GATE RESISTANCE (OHMS)
100
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
IS, SOURCE CURRENT (AMPS)
10
8
VGS = 0 V
TJ = 25°C
6
4
2
0
0.6 0.64 0.68 0.72 0.76 0.8 0.84 0.88 0.92
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
0.96
Figure 10. Diode Forward Voltage versus Current
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain−to−source voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (TC) of 25°C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance −
General Data and Its Use.”
Switching between the off−state and the on−state may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded and the
transition time (tr,tf) do not exceed 10 ms. In addition the total
power averaged over a complete switching cycle must not
exceed (TJ(MAX) − TC)/(RqJC).
A Power MOSFET designated E−FET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases non−linearly with an
increase of peak current in avalanche and peak junction
temperature.
Although many E−FETs can withstand the stress of
drain−to−source avalanche at currents up to rated pulsed
current (IDM), the energy rating is specified at rated
continuous current (ID), in accordance with industry custom.
The energy rating must be derated for temperature as shown
in the accompanying graph (Figure 12). Maximum energy at
currents below rated continuous ID can safely be assumed to
equal the values indicated.
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5
NTD3055L170, NVD3055L170
I D, DRAIN CURRENT (AMPS)
100
VGS = 15 V
SINGLE PULSE
TC = 25°C
10
10 ms
100 ms
1 ms
1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10 ms
dc
0.1
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
0.1
1
10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
100
EAS , SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
SAFE OPERATING AREA
32
ID = 7.75 A
24
16
8
0
25
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
50
75
100
125
150
175
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
10
D = 0.5
0.2
1
0.1
P(pk)
0.05
0.01
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
001
0.00001
0.0001
0.001
0.01
t, TIME (ms)
RqJC(t) = r(t) RqJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
0.1
Figure 13. Thermal Response
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
Figure 14. Diode Reverse Recovery Waveform
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6
1
10
NTD3055L170, NVD3055L170
ORDERING INFORMATION
Package
Shipping†
NTD3055L170G
DPAK
(Pb−Free)
75 Units / Rail
NTD3055L170−1G
IPAK
(Pb−Free)
75 Units / Rail
NTD3055L170T4G
DPAK
(Pb−Free)
2500 / Tape & Reel
NVD3055L170T4G*
DPAK
(Pb−Free)
2500 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable
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7
NTD3055L170, NVD3055L170
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE E
A
E
C
A
b3
B
c2
4
L3
D
1
2
Z
Z
H
DETAIL A
3
L4
NOTE 7
b2
e
b
TOP VIEW
c
SIDE VIEW
0.005 (0.13)
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
BOTTOM VIEW
BOTTOM VIEW
ALTERNATE
CONSTRUCTION
C
H
L2
GAUGE
PLANE
C
L
L1
DETAIL A
SEATING
PLANE
A1
ROTATED 905 CW
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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8
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.028 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.114 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.72
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.90 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
NTD3055L170, NVD3055L170
PACKAGE DIMENSIONS
IPAK
CASE 369D
ISSUE C
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
H
D
G
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
3 PL
0.13 (0.005)
M
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
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NTD3055L170/D