IRFI640G, SiHFI640G Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance • Lead (Pb)-free Available 200 RDS(on) (Ω) VGS = 10 V 0.18 Qg (Max.) (nC) 70 Qgs (nC) 13 Qgd (nC) 39 Configuration Single Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. The isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. G G D S COMPLIANT DESCRIPTION D TO-220 FULLPAK Available RoHS* S N-Channel MOSFET ORDERING INFORMATION Package TO-220 FULLPAK IRFI640GPbF SiHFI640G-E3 IRFI640G SiHFI640G Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage VGS at 10 V Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque TC = 25 °C TC = 100 °C SYMBOL LIMIT VDS VGS 200 ± 20 9.8 6.2 39 0.32 430 9.8 4.0 40 5.0 - 55 to + 150 300d 10 1.1 ID IDM TC = 25 °C EAS IAR EAR PD dV/dt TJ, Tstg for 10 s 6-32 or M3 screw UNIT V A W/°C mJ A mJ W V/ns °C lbf · in N·m Notes a. b. c. d. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). VDD = 50 V, starting TJ = 25 °C, L = 6.7 mH, RG = 25 Ω, IAS = 9.8 A (see fig. 12). ISD ≤ 18 A, dI/dt ≤ 150 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. 1.6 mm from case. www.kersemi.com 1 IRFI640G, SiHFI640G THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 65 Maximum Junction-to-Case (Drain) RthJC - 3.1 UNIT °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 µA 200 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.29 - V/°C VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V nA Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance IGSS IDSS RDS(on) gfs VGS = ± 20 V - - ± 100 VDS = 200 V, VGS = 0 V - - 25 VDS = 160 V, VGS = 0 V, TJ = 125 °C - - 250 - - 0.18 Ω 5.2 - - S ID = 5.9 Ab VGS = 10 V VDS = 50 V, ID = 5.9 Ab µA Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Drain to Sink Capacitance C Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance tr td(off) VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 1300 - - 400 - - 130 - f = 1.0 MHz - 12 - - - 70 - - 13 - - 39 - 14 - - 51 - - 45 - - 36 - - 4.5 - VGS = 10 V ID = 18 A, VDS = 160 V, see fig. 6 and 13b VDD = 100 V, ID = 18 A, RG = 9.1 Ω, RD= 5.4 Ω, see fig. 10b tf LD LS Between lead, 6 mm (0.25") from package and center of die contact D pF nC ns nH G - 7.5 - - - 9.8 - - 39 - - 2.0 V - 300 610 ns - 3.4 7.1 µC S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 °C, IF = 18 A, dI/dt = 100 A/µsb Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 2 S TJ = 25 °C, IS = 9.8 A, VGS = 0 Vb www.kersemi.com IRFI640G, SiHFI640G TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics, TC= 25 °C Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics, TC= 150 °C Fig. 4 - Normalized On-Resistance vs. Temperature www.kersemi.com 3 IRFI640G, SiHFI640G Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage 4 Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area www.kersemi.com IRFI640G, SiHFI640G RD VDS VGS D.U.T. RG + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case L Vary tp to obtain required IAS VDS VDS tp VDD D.U.T RG + - I AS V DD VDS 10 V tp 0.01 Ω IAS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms www.kersemi.com 5 IRFI640G, SiHFI640G Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG 10 V 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform 6 Fig. 13b - Gate Charge Test Circuit www.kersemi.com IRFI640G, SiHFI640G Peak Diode Recovery dV/dt Test Circuit + D.U.T Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - • • • • RG dV/dt controlled by R G Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test Driver gate drive P.W. + Period D= + - VDD P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage VDD Body diode forward drop Inductor current Ripple ≤ 5 % ISD * VGS = 5 V for logic level devices Fig. 14 - For N-Channel www.kersemi.com 7