IXYS IXGT64N60B3 Genx3 600v igbt Datasheet

Preliminary Technical Information
GenX3TM 600V IGBT
IXGH64N60B3
IXGT64N60B3
VCES = 600V
IC110 = 64A
VCE(sat) ≤ 1.8V
Medium speed low Vsat PT
IGBTs for 5 - 40kHz switching
tfi(typ) = 88ns
Symbol
Test Conditions
Maximum Ratings
VCES
TC = 25°C to 150°C
600
V
VCGR
TJ = 25°C to 150°C, RGE = 1MΩ
600
V
VGES
Continuous
± 20
V
VGEM
Transient
± 30
V
IC110
TC = 110°C
64
A
ICM
TC = 25°C, 1ms
400
A
SSOA
VGE = 15V, TVJ = 125°C, RG = 3Ω
ICM = 200
A
(RBSOA)
Clamped inductive load @ ≤ 600V
PC
TC = 25°C
460
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
300
260
°C
°C
1.13/10
Nm/lb.in.
6
5
g
g
TJ
TL
TSOLD
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Md
Mounting torque (TO-247)
Weight
TO-247
TO-268
TO-247 (IXGH)
G
C
C (TAB)
E
TO-268 (IXGT)
G
E
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
z
z
z
Optimized for low conduction and
switching losses
Square RBSOA
International standard packages
Advantages
z
z
Symbol Test Conditions
(TJ = 25°C unless otherwise specified)
BVCES
Characteristic Values
Min. Typ. Max.
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES
VCE = VCES
VGE = 0V
IGES
VCE = 0V, VGE = ± 20V
VCE(sat)
IC = 50A, VGE = 15V, Note 1
600
3.0
TJ = 125°C
© 2008 IXYS CORPORATION, All rights reserved
1.59
High power density
Low gate drive requirement
Applications
V
z
5.0
V
z
50
μA
500
μA
±100
nA
1.80
V
z
z
z
z
z
z
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
DS99971(04/08)
IXGH64N60B3
IXGT64N60B3
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
gfS
38
IC = 50A, VCE = 10V, Note 1
TO-247 (IXGH) Outline
64
S
4750
pF
260
pF
Cres
65
pF
Qg
168
nC
28
nC
Qgc
61
nC
td(on)
25
ns
41
ns
1.5
mJ
138
ns
Cies
Coes
Qge
tri
Eon
td(off)
tfi
VCE = 25V, VGE = 0V, f = 1MHz
IC = 50A, VGE = 15V, VCE = 0.5 • VCES
Inductive load, TJ = 25°C
IC = 50A, VGE = 15V
VCE = 480V, RG = 3Ω
88
150
ns
Eoff
1.0
1.9
mJ
td(on)
24
ns
40
ns
2.70
mJ
195
ns
tfi
131
ns
Eoff
1.95
mJ
tri
Inductive load, TJ = 125°C
Eon
IC = 50A, VGE = 15V
td(off)
VCE = 480V, RG = 3Ω
RthJC
0.27 °C/W
RthCS
0.15
1
2
∅P
3
e
Terminals: 1 - Gate
3 - Source
Dim.
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A1
2.2
2.6
A2
b
1.0
1.4
1.65
2.13
b1
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
2 - Drain
Tab - Drain
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 (IXGT) Outline
°C/W
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXGH64N60B3
IXGT64N60B3
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
100
300
VGE = 15V
11V
90
250
80
70
9V
IC - Amperes
IC - Amperes
VGE = 15V
13V
11V
60
50
7V
40
200
9V
150
100
30
7V
20
50
10
5V
0
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
2.2
1
2
100
5
6
1.25
VGE = 15V
11V
90
VGE = 15V
1.20
80
1.15
VCE(sat) - Normalized
9V
70
IC - Amperes
4
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
60
7V
50
40
30
20
I
C
= 100A
1.10
1.05
I
1.00
C
= 50A
0.95
0.90
I
0.85
5V
10
C
= 25A
0.80
0
0.75
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-50
-25
0
VCE - Volts
25
50
75
100
125
150
8.0
8.5
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
200
3.6
3.4
180
TJ = 25ºC
3.2
160
3.0
140
IC - Amperes
VCE - Volts
3
VCE - Volts
VCE - Volts
2.8
2.6
I
C
2.4
= 100A
50A
25A
120
TJ = 125ºC
25ºC
- 40ºC
100
80
2.2
60
2.0
40
1.8
20
1.6
1.4
0
5
6
7
8
9
10
11
12
VGE - Volts
© 2008 IXYS CORPORATION, All rights reserved
13
14
15
4.0
4.5
5.0
5.5
6.0
6.5
VGE - Volts
7.0
7.5
IXGH64N60B3
IXGT64N60B3
Fig. 7. Transconductance
Fig. 8. Gate Charge
110
16
TJ = - 40ºC
100
VCE = 300V
14
I C = 50A
90
25ºC
70
60
VGE - Volts
g f s - Siemens
I G = 10 mA
12
80
125ºC
50
10
8
6
40
30
4
20
2
10
0
0
0
20
40
60
80
100
120
140
160
180
200
0
20
40
IC - Amperes
60
80
100
120
140
160
180
35
40
QG - NanoCoulombs
Fig. 10. Capacitance
Fig. 9. Reverse-Bias Safe Operating Area
10,000
220
200
Capacitance - PicoFarads
180
IC - Amperes
160
140
120
100
80
60
40
20
0
100
TJ = 125ºC
Cies
1,000
Coes
100
Cres
RG = 3Ω
dV / dt < 10V / ns
f = 1 MHz
10
200
300
400
500
600
0
5
10
15
20
25
30
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
Z(th)JC - ºC / W
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS REF: G_64N60B3(75) 4-09-08-A
IXGH64N60B3
IXGT64N60B3
Fig. 13. Inductive Switching Energy Loss vs.
Junction Temperature
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
6
7
C
6
5
2
3
1
2
0
4.5
VCE = 480V
4.0
3.0
3.5
2.5
3.0
I C = 42A
2.0
5
10
15
20
25
30
1.5
2.0
1.0
1.5
1.0
I C = 21A
25
35
35
45
55
RG - Ohms
----
RG = 3Ω , VGE = 15V
TJ = 125ºC
VCE = 480V
2.0
2.5
1.5
2.0
TJ = 25ºC
1.0
1.5
0.5
1.0
0.0
0.5
-0.5
- MilliJoules
3.0
35
40
45
50
55
60
65
70
75
80
td(off) - - - -
TJ = 125ºC, VGE = 15V
600
500
130
I
I
100
0
5
10
145
90
80
130
I C = 21A
60
35
45
55
65
75
85
35
210
TJ = 125ºC
95
105
TJ - Degrees Centigrade
© 2008 IXYS CORPORATION, All rights reserved
115
115
125
200
190
tf
150
t f - Nanoseconds
t f - Nanoseconds
100
- Nanoseconds
110
25
30
160
d(off)
160
= 42A, 84A
70
25
180
190
130
C
20
170
175
I
15
Fig. 17. Inductive Turn-off Switching Times
vs. Collector Current
td(off) - - - -
140
120
200
= 21A
td(off) - - - -
180
RG = 3Ω , VGE = 15V
140
170
VCE = 480V
130
160
120
150
TJ = 25ºC
110
140
100
130
90
120
80
110
70
100
20
25
30
35
40
45
50
55
60
IC - Amperes
65
70
75
80
85
t d(off) - Nanoseconds
VCE = 480V
C
100
85
t
150
400
= 42A
300
110
205
RG = 3Ω , VGE = 15V
C
RG - Ohms
180
160
= 21A, 42A, 84A
140
Fig. 16. Inductive Turn-off Switching Times
vs. Junction Temperature
tf
C
VCE = 480V
150
IC - Amperes
170
700
I
120
0.0
30
0.0
125
800
tf
160
on
3.5
2.5
25
115
170
4.0
3.0
20
105
t d(off) - Nanoseconds
3.5
95
900
4.5
t f - Nanoseconds
4.0
85
180
5.0
E
Eoff - MilliJoules
5.5
Eon
75
Fig. 15. Inductive Turn-off Switching Times
vs. Gate Resistance
5.0
Eoff
65
0.5
TJ - Degrees Centigrade
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
4.5
2.5
-0.5
0
0
5.0
3.5
0.0
-1
= 84A
0.5
1
I C = 21A
C
- MilliJoules
I C = 42A
I
on
VCE = 480V
- MilliJoules
4
----
E
---
TJ = 125ºC , VGE = 15V
on
Eon -
Eoff
Eon
RG = 3Ω , VGE = 15V
4.0
E
Eoff - MilliJoules
4
3
5.5
Eoff
4.5
= 84A
Eoff - MilliJoules
I
5
5.0
IXGH64N60B3
IXGT64N60B3
Fig. 18. Inductive Turn-on Switching Times
vs. Gate Resistance
130
80
tr
td(on) - - - -
110
TJ = 125ºC, VGE = 15V
I
C
= 84A
55
70
50
C
45
= 42A
50
40
40
35
30
30
20
I
C
70
10
5
10
15
20
25
30
RG = 3Ω
60
28
td(on) - - - -
27
VGE = 15V
VCE = 480V
50
26
I C = 42A
40
25
30
24
20
23
22
I
20
0
tr
10
25
= 21A
29
I C = 84A
C
= 21A
0
35
25
RG - Ohms
t d(on) - Nanoseconds
60
80
I
80
t d(on) - Nanoseconds
65
90
60
30
70
VCE = 480V
100
90
75
t r - Nanoseconds
120
t r - Nanoseconds
Fig. 19. Inductive Turn-on Switching Times
vs. Junction Temperature
35
45
55
65
75
85
95
105
115
21
125
TJ - Degrees Centigrade
Fig. 20. Inductive Turn-on Switching Times
vs. Collector Current
32
70
tr
td(on) - - - -
31
65
RG = 3Ω ,
VGE = 15V
30
60
VCE = 480V
25ºC < TJ < 125ºC
29
55
28
50
27
45
26
40
25
35
24
30
23
25
22
20
21
15
t d(on) - Nanoseconds
t r - Nanoseconds
75
20
20
25
30
35
40
45
50
55
60
65
70
75
80
85
IC - Amperes
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS REF: G_64N60B3(75) 4-09-08-A
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