IXYS IXFB300N10P Polar power mosfet hiperfet Datasheet

Preliminary Technical Information
PolarTM Power MOSFET
HiPerFETTM
IXFB300N10P
VDSS
ID25
RDS(on)
trr
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
=
=
≤
≤
100V
300A
Ω
5.5mΩ
200ns
PLUS264TM (IXFB)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
100
100
V
V
VGSS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
ILRMS
IDM
TC = 25°C
Leads Current Limit, RMS
TC = 25°C, pulse width limited by TJM
300
75
900
A
A
A
IA
TC = 25°C
100
A
EAS
TC = 25°C
3
J
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
20
V/ns
PD
TC = 25°C
1500
W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300
260
°C
°C
30..120/6.7..27
N/lb.
10
g
TJ
TJM
Tstg
TL
TSOLD
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
FC
Mounting force
G
(TAB)
S
G = Gate
S = Source
D
= Drain
TAB = Drain
Features
•
•
•
•
Fast intrinsic diode
Avalanche Rated
Low RDS(ON) and QG
Low package inductance
Advantages
z
z
z
Weight
D
z
Easy to mount
Space savings
High power density
Low gate drive requirement
Applications
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = 3mA
100
VGS(th)
VDS = VGS, ID = 8mA
3.0
IGSS
VGS = ±20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
RDS(on)
VGS = 10V, ID = 50A, Note 1
TJ = 150°C
© 2008 IXYS CORPORATION, All rights reserved
V
5.0
V
±200
nA
25
1.5
μA
mA
5.5
mΩ
• DC-DC coverters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC and DC motor drives
• Uninterrupted power supplies
• High speed power switching
applications
DS100015(07/08)
IXFB300N10P
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min.
Typ.
Max.
gfs
55
VDS = 10V, ID = 60A, Note 1
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 100A
RG = 1Ω (External)
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
92
S
23
nF
6100
pF
417
pF
36
ns
35
ns
56
ns
25
ns
279
nC
84
nC
107
nC
RthJC
0.10
RthCS
°C/W
°C/W
0.13
Source-Drain Diode
PLUS264TM (IXFB) Outline
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
Symbol
Test Conditions
IS
VGS = 0V
ISM
Repetitive, pulse width limited by TJM
VSD
IF = 100A, VGS = 0V, Note 1
trr
QRM
IRM
IF = 150A, -di/dt = 100A/μs
300
A
1000
A
1.3
V
200
ns
μC
A
0.71
10
VR = 50V
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFB300N10P
Fig. 2. Output Characteristics
@ 150ºC
Fig. 1. Extended Output Characteristics
@ 25ºC
300
350
VGS = 15V
10V
9V
300
VGS = 15V
10V
9V
250
ID - Amperes
ID - Amperes
250
8V
200
150
7V
200
8V
150
7V
100
6V
100
50
50
6V
5V
0
0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
0.0
4.0
0.4
0.8
1.2
2.0
2.4
2.8
3.2
3.6
2.4
VGS = 10V
2.2
2.2
RDS(on) - Normalized
2.0
1.8
I D = 300A
1.6
I D = 150A
1.4
1.2
2.0
TJ = 175ºC
1.8
VGS = 10V
15V - - - - -
1.6
1.4
1.2
1.0
TJ = 25ºC
1.0
0.8
0.8
0.6
-50
-25
0
25
50
75
100
125
150
0
175
50
100
150
200
250
300
350
ID - Amperes
TJ - Degrees Centigrade
Fig. 5. Maximum Drain Current vs.
Case Temperature
Fig. 6. Input Admittance
200
90
180
External Lead Current Limit
80
TJ = 150ºC
25ºC
- 40ºC
160
70
140
60
ID - Amperes
ID - Amperes
2.4
Fig. 4. RDS(on) Normalized to ID = 150A Value
vs. Drain Current
Fig. 3. RDS(on) Normalized to ID = 150A Value
vs. Junction Temperature
RDS(on) - Normalized
1.6
VDS - Volts
VDS - Volts
50
40
30
120
100
80
60
20
40
10
20
0
0
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
© 2008 IXYS CORPORATION, All rights reserved
125
150
175
3.5
4.0
4.5
5.0
5.5
VGS - Volts
6.0
6.5
7.0
7.5
IXFB300N10P
Fig. 8. Forward Voltage Drop of
Intrinsic Diode
Fig. . Transconductance
180
350
TJ = - 40ºC
160
300
250
25ºC
120
100
IS - Amperes
g f s - Siemens
140
150ºC
80
200
150
TJ = 150ºC
60
100
TJ = 25ºC
40
50
20
0
0
0
20
40
60
80
100
120
140
160
180
0.3
200
0.4
0.5
0.6
ID - Amperes
0.8
0.9
1.0
1.1
1.2
1.3
Fig. 10. Capacitance
Fig. 9. Gate Charge
10
100,000
f = 1 MHz
VDS = 50V
9
Ciss
I D = 150A
8
Capacitance - PicoFarads
I G = 10mA
7
VGS - Volts
0.7
VSD - Volts
6
5
4
3
2
10,000
Coss
1,000
1
Crss
0
0
40
80
120
160
200
240
100
280
0
5
10
QG - NanoCoulombs
15
20
25
30
35
40
VDS - Volts
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Forward-Bias Safe Operating Area
1,000
1.000
RDS(on) Limit
100
External Lead Limit
Z(th)JC - ºC / W
ID - Amperes
100µs
1ms
10
TJ = 175ºC
0.010
10ms
TC = 25ºC
Single Pulse
DC
100ms
1
1
0.100
10
100
1000
VDS - Volts
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_300N10P(9S) 7-22-08
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