IXYS IXBH42N170A Bimosfet monolithic bipolar mos transistor Datasheet

Advance Technical Information
IXBH 42N170A
IXBT 42N170A
BIMOSFETTM Monolithic
Bipolar MOS Transistor
Symbol
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
1700
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MΩ
1700
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C
42
A
IC90
TC = 90°C
21
A
ICM
TC = 25°C, 1 ms
120
A
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load
90
1350
A
V
TSC
(SCSOA)
VGE = 15 V, VCES = 1200V, TJ = 125°C
RG = 10 Ω non repetitive
10
µs
PC
TC = 25°C
ICM =
VCES =
350
W
TJM
150
°C
Tstg
-55 ... +150
°C
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
Md
Mounting torque (M3)
Weight
TO-247 AD
TO-268
Symbol
Test Conditions
BVCES
VGE(th)
IC
IC
ICES
VCE = 0.8 VCES
VGE = 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC
= IC90, VGE = 15 V
© 2002 IXYS All rights reserved
350
°C
260
°C
1.13/10Nm/lb.in.
6
4
g
g
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
= 250 µA, VGE = 0 V
= 750 µA, VCE = VGE
1700
2.5
TJ = 25°C
TJ = 125°C
TJ = 125°C
4.5
5.0
= 1700
= 42
= 6.0
= 50
V
A
V
ns
TO-268 (IXBT)
G
E
(TAB)
TO-247 AD (IXBH)
G
G = Gate,
E = Emitter,
C (TAB)
C
E
C = Collector,
TAB = Collector
°C
-55 ... +150
TJ
VCES
IC25
VCE(sat)
tfi
5.5
V
V
50
1.5
µA
mA
±100
nA
6.0
V
V
Features
z
High Blocking Voltage
z
JEDEC TO-268 surface and
JEDEC TO-247 AD
z
Fast switching
z
High current handling capability
z
MOS Gate turn-on
- drive simplicity
z
Molding epoxies meet UL 94 V-0
flammability classification
Applications
z
AC motor speed control
z
Uninterruptible power supplies (UPS)
z
Switched-mode and resonant-mode
power supplies
z
Substitutes for high voltage MOSFETs
Advantages
z
Lower conduction losses than MOSFETs
z
High power density
z
Suitable for surface mounting
z
Easy to mount with 1 screw,
(isolated mounting screw hole)
98939 (7/02)
IXBH 42N170A
IXBT 42N170A
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
IC = IC90; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
24
S
3700
pF
170
pF
Cres
45
pF
Qg
155
nC
30
nC
Cies
Coes
Qge
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC
15
∅P
= IC90, VGE = 15 V, VCE = 0.5 VCES
Qgc
55
nC
td(on)
Inductive load, TJ = 25°°C
25
ns
tri
IC = IC90, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 1.0 Ω
35
ns
230
ns
50
ns
2.8
mJ
25
ns
38
ns
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
Inductive load, TJ = 125°°C
IC
= IC90, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 1.0 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
5.0
mJ
300
ns
120
ns
6
mJ
e
Dim.
Millimeter
Min.
Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
0.35 K/W
RthJC
RthCK
TO-247 AD Outline
(TO-247)
Reverse Diode
0.25
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
VF
IF
t
= IC90, VGE = 0 V, Pulse test,
< 300 us, duty cycle d < 2%
IRM
t rr
IF
vR
= 25A, VGE = 0 V, -diF/dt = 50 A/us
= 100V
5.0
15
330
V
A
ns
Min Recommended Footprint
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
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