Fairchild FQB7N60TM N-channel qfetâ® mosfet 800 v, 3.9 a, 3.6 î© Datasheet

FQB7N60 / FQI7N60
N-Channel QFET® MOSFET
800 V, 3.9 A, 3.6 Ω
Description
Features
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
• 3.9 A, 800 V, RDS(on) = 3.6 Ω (Max.) @VGS = 10 V,
ID = 1.95 A
• Low Gate Charge (Typ. 19 nC)
• Low Crss (Typ. 8.6 pF)
• 100% Avalanche Tested
D
D
G
G
S
G
DS
D2-PAK
I2-PAK
S
Absolute Maximum Ratings T
Symbol
VDSS
o
C
= 25 C unless otherwise noted.
FQB7N60TM
FQB7N60TM_WS
FQI7N60TU
Parameter
Unit
ID
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
IDM
Drain Current
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
7.4
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C) *
(Note 1)
14.2
4.5
3.13
mJ
V/ns
W
142
1.14
-55 to +150
W
W/°C
°C
300
°C
- Continuous (TC = 100°C)
dv/dt
PD
TJ, TSTG
TL
- Pulsed
(Note 1)
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8 from Case for 5 Seconds
600
V
7.4
A
4.7
A
29.6
A
±30
V
580
mJ
Thermal Characteristics
Symbol
RJC
RJA
FQB7N60TM
FQB7N60TM_WS
FQI7N60TU
Parameter
0.88
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
2
Thermal Resistance, Junction to Ambient (*1 in Pad of 2-oz Copper), Max.
©2000 Fairchild Semiconductor Corporation
FQB7N60 / FQI7N60 Rev. C1
Unit
1
62.5
oC/W
40
www.fairchildsemi.com
FQB7N60 / FQI7N60 — N-Channel QFET® MOSFET
October 2013
Part Number
FQB7N60TM
Top Mark
FQB7N60
Package
D2-PAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
24 mm
Quantity
800 units
FQB7N60TM_WS
FQI7N60TU
FQB7N60S
FQI7N60
D2-PAK
I2-PAK
Tape and Reel
Tube
330 mm
N/A
24 mm
N/A
800 units
50 units
Electrical Characteristics T
Symbol
o
C
= 25 C unless otherwise noted.
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
600
--
--
V
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.67
VDS = 600 V, VGS = 0 V
--
--
10
µA
VDS = 480 V, TC = 125°C
--
--
100
µA
IDSS
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
3.0
--
5.0
V
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 3.7 A
--
0.8
1.0
Ω
gFS
Forward Transconductance
VDS = 50 V, ID = 3.7 A
--
6.4
--
S
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
1100
1430
pF
--
135
175
pF
--
16
21
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 300 V, ID = 7.4 A,
RG = 25 Ω
(Note 4)
VDS = 480 V, ID = 7.4 A,
VGS = 10 V
(Note 4)
--
30
70
ns
--
80
170
ns
--
65
140
ns
--
60
130
ns
--
29
38
nC
--
7
--
nC
--
14.5
--
nC
A
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
7.4
ISM
--
--
29.6
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 7.4 A
Drain-Source Diode Forward Voltage
--
--
1.4
V
trr
Reverse Recovery Time
--
320
--
ns
Qrr
Reverse Recovery Charge
--
2.4
--
µC
VGS = 0 V, IS = 7.4 A,
dIF / dt = 100 A/µs
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 19.5 mH, IAS = 7.4 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25oC.
3. ISD ≤ 7.4 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25oC.
4. Essentially independent of operating temperature.
©2000 Fairchild Semiconductor Corporation
FQB7N60 / FQI7N60 Rev. C1
2
www.fairchildsemi.com
FQB7N60 / FQI7N60 — N-Channel QFET® MOSFET
Package Marking and Ordering Information
VGS
15.0 V
10.0 V
8.0 V
7.5 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Top :
ID, Drain Current [A]
1
10
ID, Drain Current [A]
1
10
0
10
0
10
150
25
Notes :
1. 250s Pulse Test
2. TC = 25
-1
10
Notes :
1. VDS = 50V
2. 250s Pulse Test
-55
-1
-1
0
10
10
1
10
10
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
2.5
VGS = 10V
1
10
VGS = 20V
IDR, Reverse Drain Current [A]
R DS(ON) [ ],
Drain-Source On-Resistance
2.0
1.5
1.0
0.5
Note : TJ = 25
0.0
0
10
0
5
10
15
20
25
150
-1
10
ID, Drain Current [A]
0.2
V GS , Gate-Source Voltage [V]
Capacitance [pF]
Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
400
VDS = 480V
8
6
4
2
Note : ID = 7.4A
0
0
1
10
0
5
10
15
20
25
30
35
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor Corporation
FQB7N60 / FQI7N60 Rev. C1
1.2
VDS = 120V
Coss
10
1.0
VDS = 300V
10
800
0
-1
10
0.8
12
Ciss
1200
0.6
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1600
0.4
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2000
Notes :
1. VGS = 0V
2. 250s Pulse Test
25
Figure 6. Gate Charge Characteristics
3
www.fairchildsemi.com
FQB7N60 / FQI7N60 — N-Channel QFET® MOSFET
! 1.2
3.0
BV DSS , (Normalized)
Drain-Source Breakdown Voltage
2.5
RDS(ON) , (Normalized)
Drain-Source On-Resistance
1.1
1.0
Notes :
1. VGS = 0 V
2. ID = 250 A
0.9
0.8
-100
-50
0
50
100
150
2.0
1.5
1.0
Notes :
1. VGS = 10 V
2. ID = 3.7 A
0.5
0.0
-100
200
-50
0
50
100
150
200
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
8
2
10
Operation in This Area
is Limited by R DS(on)
1
10
ID , Drain Current [A]
ID , Drain Current [A]
6
100 µ s
1 ms
10 ms
DC
0
10
Notes :
4
2
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-1
10
0
1
10
2
10
0
25
3
10
10
50
ZθJC(t), Thermal Response [oC/W]
Figure 9. Maximum Safe Operating Area
10
75
100
125
150
TC, Case Temperature []
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs. Case Temperature
0
D = 0 .5
N otes :
1 . Z J C( t ) = 0 . 8 8 /W M a x .
2 . D u t y F a c t o r , D = t 1 /t 2
3 . T J M - T C = P D M * Z J C( t )
0 .2
10
-1
0 .1
0 .0 5
PDM
0 .0 2
0 .0 1
t1
s in g le p u ls e
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
t2
10
0
10
1
t1, Rectangular Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
©2000 Fairchild Semiconductor Corporation
FQB7N60 / FQI7N60 Rev. C1
4
www.fairchildsemi.com
FQB7N60 / FQI7N60 — N-Channel QFET® MOSFET
! FQB7N60 / FQI7N60 — N-Channel QFET® MOSFET
50KΩ
200nF
12V
VGS
Same Type
as DUT
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
IG = const.
3mA
Charge
Figure 12. Gate Charge Test Circuit & Waveform
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
V
10V
GS
10%
td(on)
tr
td(off)
t on
t off
tf
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
BVDSS
IAS
ID
RG
V
10V
GS
GS
VDD
ID (t)
VDS (t)
VDD
DUT
tp
Time
tp
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
©2000 Fairchild Semiconductor Corporation
FQB7N60 / FQI7N60 Rev. C1
5
www.fairchildsemi.com
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
I SD
( DUT )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2000 Fairchild Semiconductor Corporation
FQB7N60 / FQI7N60 Rev. C1
6
www.fairchildsemi.com
FQB7N60 / FQI7N60 — N-Channel QFET® MOSFET
DUT
FQB7N60 / FQI7N60 — N-Channel QFET® MOSFET
Mechanical Dimensions
Figure 16. TO263 (D2PAK), Molded, 2-Lead, Surface Mount
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002
©2000 Fairchild Semiconductor Corporation
FQB7N60 / FQI7N60 Rev. C1
7
www.fairchildsemi.com
FQB7N60 / FQI7N60 — N-Channel QFET® MOSFET
Mechanical Dimensions
Figure 17. TO262 (I2PAK), Molded, 3-Lead, Jedec Variation AA
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT262-003
©2000 Fairchild Semiconductor Corporation
FQB7N60 / FQI7N60 Rev. C1
8
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
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As used here in:
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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No Identification Needed
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
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Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2000 Fairchild Semiconductor Corporation
FQB7N60 / FQI7N60 Rev. C1
9
www.fairchildsemi.com
FQB7N60 / FQI7N60 — N-Channel QFET® MOSFET
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