ETL MSD1010T1 Low saturation voltage Datasheet

Low Saturation Voltage
MMBT1010LT1
MSD1010T1
PNP Silicon Driver Transistors
Part of the GreenLineTM Portfolio of devices with energy–conserving traits.
This PNP Silicon Epitaxial Planar Transistor is designed to conserve energy in
general purpose driver applications. This device is housed in the SOT-23 and
SC–59 packages which are designed for low power surface mount applications.
• Low V CE(sat) , < 0.1 V at 50 mA
Applications
• LCD Backlight Driver
• Annunciator Driver
• General Output Device Driver
PNP GENERAL
PURPOSE DRIVER
TRANSISTORS
SURFACE MOUNT
3
1
2
MAXIMUM RATINGS (T A = 25°C)
CASE 318–08, STYLE 6
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Symbol
Value
Unit
V (BR)CBO
V (BR)CEO
V (BR)EBO
45
15
5.0
Vdc
Vdc
Vdc
IC
100
mAdc
Collector Current — Continuous
SOT– 23
3
1
THERMAL CHARACTERISTICS
2
Characteristic
Power Dissipation
T A =25 °C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature Range
Symbol
Max
Unit
P D (1)
250
mW
1.8
mW/°C
R θJA
556
°C/W
TJ
150
°C
°C
T
stg
–55 —+150
CASE 318D –04, STYLE 1
SC– 59
COLLECTOR
DEVICE MARKING
MMBT1010LT1 = GLP; MSD1010T1 = GLP
BASE
EMITTER
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Condition
Min
Max
Unit
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
V (BR)CEO
V (BR)EBO
I CBO
I CEO
h FE1 (2)
V CE(sat)(2)
15
5.0
—
—
300
—
—
V BE(sat)(2)
—
—
0.1
100
600
0.1
0.1
0.19
1.1
Vdc
Vdc
µA
µA
—
Vdc
Base-Emitter Saturation Voltage
I C = 10 mA, I B = 0
I E = 10 µA,I E = 0
V CB = 20 V, I E = 0
V CE = 10 V, I B = 0
V CE = 5 V,I C = 100 mA
I C = 10 mA, I B = 1.0 mA
I C = 50 mA, I B = 5.0 mA
I C = 100 mA, I B = 10 mA
I C = 100 mA, I B = 10 mA
—
Vdc
(1) Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
(2) Pulse Test: Pulse Width <300 µs, D.C <2%.
O3–1/1
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