FAIRCHILD KSC5029

KSC5029
KSC5029
High Voltage and High Reliabilty
• High Speed Switching
• Wide SOA
TO-3P
1
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Value
1100
Units
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current (DC)
4.5
A
ICP
Collector Current (Pulse)
15
A
IB
Base Current
PC
Collector Dissipation (TC=25°C)
2
A
90
W
TJ
TSTG
Junction Temperature
150
°C
Storage Temperature
- 55 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC = 1mA, IE = 0
Min.
1100
Typ.
Max.
Units
V
BVCEO
Collector-Emitter Breakdown Voltage
IC = 5mA, IB = 0
800
BVEBO
Emitter-Base Breakdown Voltage
IE = 1mA, IC = 0
7
V
VCEX(sus)
Collector-Emitter Sustaining Voltage
IC = 2A, IB1 = -IB2 = 0.4A
L = 2mH, Clamped
800
V
V
ICBO
Collector Cut-off Current
VCB = 800V, IE = 0
10
µA
IEBO
Emitter Cut-off Current
VEB = 5V, IC = 0
10
µA
hFE1
hFE2
DC Current Gain
VCE = 5V, IC = 0.3A
VCE = 5V, IC = 1.5A
VCE(Sat)
Collector-Emitter Saturation Voltage
IC = 2A, IB = 0.4A
2
V
VBE(Sat)
Base-Emitter Saturation Voltage
IC = 2A, IB = 0.4A
1.5
V
10
8
40
Cob
Output Capacitance
VCB = 10V, IE = 0, f = 1MHz
90
pF
fT
Current Gain Bandwidth Product
VCE = 10V, IC = 0.3A
15
MHz
tON
Turn ON Time
tSTG
Storage Time
tF
Fall Time
VCC = 400V
IC = 51B1 = -2.5IB2 = 3A
RL = 133Ω
0.5
µs
3
µs
0.3
µs
hFE Classificntion
Classification
N
R
O
hFE1
10 ~ 20
15 ~ 30
20 ~ 40
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSC5029
Typical Characteristics
5.0
1000
IB = 800mA
VCE = 5V
IB = 600mA
4.0
IB = 500mA
3.5
IB = 400mA
3.0
IB = 300mA
2.5
IB = 200mA
IB = 150mA
IB = 100mA
2.0
1.5
IB = 50mA
1.0
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
4.5
100
10
IB = 20mA
0.5
IB = 0
0.0
0
1
2
3
4
5
6
7
8
9
1
0.01
10
0.1
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
4.0
IC = 5 IB
VCE = 5V
3.5
1
0.1
IC[A], COLLECTOR CURRENT
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
V BE(sat)
VCE(sat)
0.01
0.01
0.1
1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
10
0.2
0.4
0.6
0.8
1.0
1.2
VBE[V], BASE-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
100
10
ICMAX.(Pulse)
0µ
s
0.1
DC
s
tF
10
tON
ICMAX
s
1m
1
10
m
10
IC[A], COLLECTOR CURRENT
tSTG
tON, tSTG, tF [µ s], TIME
1
1
0.1
0.01
0.01
0.1
1
IC[A], COLLECTOR CURRENT
Figure 5. Switching Time
©2001 Fairchild Semiconductor Corporation
10
1
10
100
1000
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 6. Safe Operating Area
Rev. A1, June 2001
KSC5029
Typical Characteristics (Continued)
100
100
90
PC[W], POWER DISSIPATION
IC[A], COLLECTOR CURRENT
IB 2 = -0.4A
L=200uH
10
1
0.1
80
70
60
50
40
30
20
10
0
0.01
10
100
1000
10000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 7. Reverse Bias Safe Operating Area
©2001 Fairchild Semiconductor Corporation
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 8. Power Derating
Rev. A1, June 2001
KSC5029
Package Demensions
TO-3P
15.60 ±0.20
3.00 ±0.20
3.80 ±0.20
+0.15
1.00 ±0.20
18.70 ±0.20
23.40 ±0.20
19.90 ±0.20
1.50 –0.05
16.50 ±0.30
2.00 ±0.20
9.60 ±0.20
4.80 ±0.20
3.50 ±0.20
13.90 ±0.20
ø3.20 ±0.10
12.76 ±0.20
13.60 ±0.20
1.40 ±0.20
+0.15
5.45TYP
[5.45 ±0.30]
5.45TYP
[5.45 ±0.30]
0.60 –0.05
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
STAR*POWER™
FAST®
OPTOPLANAR™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
PACMAN™
POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
UltraFET®
VCX™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
2. A critical component is any component of a life support
1. Life support devices or systems are devices or systems
device or system whose failure to perform can be
which, (a) are intended for surgical implant into the body,
reasonably expected to cause the failure of the life support
or (b) support or sustain life, or (c) whose failure to perform
device or system, or to affect its safety or effectiveness.
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H3