Renesas HAT2142H Silicon n channel power mos fet power switching Datasheet

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HAT2142H
Silicon N Channel Power MOS FET
Power Switching
ADE-208-1583E (Z)
6th. Edition
Sep. 2002
Features
• Capable of 7 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
RDS(on) = 35 mΩ typ. (at VGS = 10 V)
Outline
LFPAK
5
5
D
4
G
3
1 2
4
1, 2, 3 Source
4
Gate
5
Drain
S S S
1 2 3
HAT2142H
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
100
V
Gate to source voltage
VGSS
± 20
V
Drain current
ID
10
A
40
A
Drain peak current
ID(pulse)
Body-drain diode reverse drain current
IDR
Avalanche current
IAP
Avalanche energy
EAR
Note1
10
A
10
A
Note 3
10
mJ
Note2
15
W
Note 3
Channel dissipation
Pch
Channel temperature
Tch
150
°C
Storage temperature
Tstg
– 55 to + 150
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Rev.5, Sep. 2002, page 2 of 2
HAT2142H
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V(BR)DSS
100
—
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
± 20
—
—
V
IG = ±100 µA, VDS = 0
Gate to source leak current
IGSS
—
—
± 10
µA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
—
1
µA
VDS = 100 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
2.0
—
3.5
V
VDS = 10 V, I D = 1 mA
Static drain to source on state
RDS(on)
—
35
44
mΩ
ID = 5 A, VGS = 10 V
resistance
RDS(on)
—
38
51
mΩ
ID = 5 A, VGS = 7 V
Forward transfer admittance
|yfs|
9
15
—
S
ID = 5 A, VDS = 10 V
Input capacitance
Ciss
—
2000
—
pF
VDS = 10 V
Output capacitance
Coss
—
175
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
90
—
pF
f = 1 MHz
Total gate charge
Qg
—
32
—
nc
VDD = 50 V
Gate to source charge
Qgs
—
8.0
—
nc
VGS = 10 V
Gate to drain charge
Qgd
—
7.5
—
nc
ID = 10 A
Turn-on delay time
td(on)
—
18
—
ns
VGS = 10 V, ID = 5 A
Rise time
tr
—
11
—
ns
VDD ≅ 30 V
Turn-off delay time
td(off)
—
60
—
ns
RL = 6 Ω
Fall time
tf
—
9
—
ns
Rg = 4.7 Ω
Body–drain diode forward voltage
VDF
—
0.82
1.07
V
IF = 10 A, VGS = 0
—
50
—
ns
IF = 10 A, VGS = 0
diF/ dt = 100 A/ µs
Body–drain diode reverse recovery trr
time
Note4
Note4
Note4
Note4
Notes: 4. Pulse test
Rev.5, Sep. 2002, page 3 of 3
HAT2142H
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
500
ID (A)
100
30
20
10
0
10
10
Drain Current
Channel Dissipation
Pch (W)
40
1
50
100
150
200
Tc (°C)
10 V
4.5 V
Operation in
this area is
limited by R DS(on)
Op
s
s
0m
s
era
tio
n
Typical Transfer Characteristics
10
Pulse Test
8
V DS = 10 V
Pulse Test
8
ID (A)
4.0 V
6
3.8 V
4
2
VGS = 3.5 V
Drain Current
ID (A)
DC
=1
µs
Tc = 25°C
0.01 1 shot Pulse
0.1 0.3
1
3
10
30
100
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Drain Current
PW
0µ
0.1
Case Temperature
10
1m
10
6
4
2
25°C
Tc = 75°C
-25°C
0
2
4
6
Drain to Source Voltage
Rev.5, Sep. 2002, page 4 of 4
8
VDS (V)
10
0
1
2
3
Gate to Source Voltage
4
VGS (V)
5
400
300
200
ID = 5 A
100
2A
1A
0
Static Drain to Source on State Resistance
R DS(on) (m Ω)
Pulse Test
4
8
12
Gate to Source Voltage
16
20
V GS (V)
Static Drain to Source on State Resistance
vs. Temperature
100
Pulse Test
5A
I D = 1 A, 2 A
80
60
40
20
0
-25
V GS = 7 V
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
Drain to Source On State Resistance
R DS(on) (m Ω)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
1 A, 2 A, 5 A
10 V
0
25 50 75 100 125 150
Case Temperature Tc (°C)
50
VGS = 7 V
10 V
20
10
0.1
0.3
1
3
Drain Current
10
30
I D (A)
100
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Drain to Source Voltage
V DS(on) (mV)
HAT2142H
100
Tc = -25°C
30
10
75°C
25°C
3
1
0.3
0.1
0.1
V DS = 10 V
Pulse Test
0.3
1
3
10
30
100
Drain Current I D (A)
Rev.5, Sep. 2002, page 5 of 5
HAT2142H
Body-Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
10000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
100
50
20
3000
Ciss
1000
300
Coss
100
Crss
10
0.1
di / dt = 100 A / µs
V GS = 0, Ta = 25°C
30
VGS = 0
f = 1 MHz
10
0.3
1
3
10
30
100
Reverse Drain Current I DR (A)
0
V GS
VDD = 100 V
50 V
25 V
16
12
V DS
100
50
0
8
VDD = 100 V
50 V
25 V
8
16
24
32
Gate Charge Qg (nc)
Rev.5, Sep. 2002, page 6 of 6
4
0
40
20
30
40
50
Switching Characteristics
V GS = 10 V, V DS = 30 V
PW = 5 µs
Switching Time t (ns)
200
V GS (V)
I D = 10 A
150
500
20
Gate to Source Voltage
Drain to Source Voltage
V DS (V)
Dynamic Input Characteristics
250
10
Drain to Source Voltage V DS (V)
200
100
t d(off)
50
20
10
t d(on)
tr
tf
5
0.1 0.2 0.5 1
2 5 10 20 50 100
Drain Current I D (A)
HAT2142H
8
Repetitive Avalanche Energy E AR(mJ)
(A)
10
Reverse Drain Current I F
Maximum Avalanche Energy vs.
Channel Temperature Derating
Reverse Drain Current vs.
Source to Drain Voltage
10 V
V GS = 0
5V
6
4
2
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
5
I AP = 10A
V DD = 50 V
duty < 0.1 %
Rg > 50 Ω
4
3
2
1
0
25
V SDF (V)
50
75
100
125
150
Channel Temperature Tch (˚C)
Avalanche Test Circuit
V DS
Monitor
Avalanche Waveform
EAR =
L
1
2
I AP
Monitor
L • IAP2 •
VDSS
VDSS - V DD
V (BR)DSS
I AP
Rg
D. U. T
V DS
VDD
ID
Vin
15 V
50Ω
0
VDD
Rev.5, Sep. 2002, page 7 of 7
HAT2142H
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θch - c(t) = γs (t) • θch - c
θch - c = 8.33°C/ W, Tc = 25°C
0.1
0.05
0.03
PDM
0.02
1
0.0
0.01
10 µ
D=
e
uls
PW
T
PW
p
ot
T
sh
1
100 µ
1m
100 m
10 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
Rg
90%
D.U.T.
RL
Vin
Vin
10 V
V DS
= 30 V
Vout
10%
10%
90%
td(on)
Rev.5, Sep. 2002, page 8 of 8
tr
10%
90%
td(off)
tf
HAT2142H
Package Dimensions
As of January, 2002
Unit: mm
4.9
5.3 Max
4.0 ± 0.2
+0.05
1.0
4.2
6.1 –0.3
+0.1
3.95
5
4
0˚ – 8˚
+0.25
+0.05
0.20 –0.03
0.6 –0.20
1.3 Max
1
1.1 Max
+0.03
0.07 –0.04
3.3
0.25 –0.03
0.75 Max
1.27
0.10
0.40 ± 0.06
0.25 M
Hitachi Code
JEDEC
JEITA
Mass (reference value)
LFPAK
—
—
0.080 g
Rev.5, Sep. 2002, page 9 of 9
HAT2142H
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Colophon 7.0
Rev.5, Sep. 2002, page 10 of 10
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