Infineon IPD110N12N3G Optimostm3power-transistor Datasheet

IPD110N12N3 G
IPS110N12N3 G
OptiMOS 3Power-Transistor
TM
Features
Product Summary
• N-channel, normal level
V DS
120
V
R DS(on),max
11
mΩ
ID
75
A
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant; halogen free
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPS110N12N3 G
IPD110N12N3 G
Package
PG-TO251-3
PG-TO252-3
Marking
110N12N
110N12N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C
75
T C=100 °C
54
Unit
A
Pulsed drain current2)
I D,pulse
T C=25 °C
300
Avalanche energy, single pulse
E AS
I D=75 A, R GS=25 Ω
120
mJ
Gate source voltage3)
V GS
±20
V
Power dissipation
P tot
136
W
Operating and storage temperature
T j, T stg
-55 ... 175
°C
T C=25 °C
IEC climatic category; DIN IEC 68-1
1)
J-STD20 and JESD22
2)
see figure 3
3)
Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V
Rev. 2.2
55/175/56
page 1
2009-07-09
IPD110N12N3 G
IPS110N12N3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
1.1
minimal footprint
-
-
75
6 cm2 cooling area 4)
-
-
50
120
-
-
Thermal characteristics
Thermal resistance, junction - case
R thJC
Thermal resistance, junction ambient
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
Gate threshold voltage
V GS(th)
V DS=V GS, I D=83 µA
2
3
4
Zero gate voltage drain current
I DSS
V DS=100 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=100 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=75 A
-
9.2
11
mΩ
Gate resistance
RG
-
1.5
-
Ω
Transconductance
g fs
42
83
-
S
|V DS|>2|I D|R DS(on)max,
I D=75 A
4)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.2
page 2
2009-07-09
IPD110N12N3 G
IPS110N12N3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
3240
4310
-
408
543
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
C rss
-
22
-
Turn-on delay time
t d(on)
-
16
-
Rise time
tr
-
16
-
Turn-off delay time
t d(off)
-
24
-
Fall time
tf
-
8
-
Gate to source charge
Q gs
-
18
-
Gate to drain charge
Q gd
-
12
-
-
20
-
V GS=0 V, V DS=60 V,
f =1 MHz
V DD=60 V, V GS=10 V,
I D=75 A, R G=1.6 Ω
pF
ns
Gate Charge Characteristics 5)
V DD=60 V, I D=75 A,
V GS=0 to 10 V
nC
Switching charge
Q sw
Gate charge total
Qg
-
49
65
Gate plateau voltage
V plateau
-
5.6
-
Output charge
Q oss
-
56
75
nC
-
-
75
A
-
-
300
-
1
1.2
-
90
ns
-
249
nC
V DD=60 V, V GS=0 V
V
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
5)
Rev. 2.2
T C=25 °C
V GS=0 V, I F=75 A,
T j=25 °C
V R=60 V, I F=I S,
di F/dt =100 A/µs
V
See figure 16 for gate charge parameter definition
page 3
2009-07-09
IPD110N12N3 G
IPS110N12N3 G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
140
80
70
120
60
100
I D [A]
P tot [W]
50
80
40
60
30
40
20
20
10
0
0
0
50
100
150
200
0
50
T C [°C]
100
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
103
101
1 µs
10 µs
102
100 µs
100
DC
101
0.5
Z thJC [K/W]
I D [A]
1 ms
10 ms
0.2
0.1
10
10
-1
0.05
0.02
0
0.01
single pulse
10-1
10
10-2
-1
10
0
10
1
10
2
10
3
V DS [V]
Rev. 2.2
10-5
10-4
10-3
10-2
10-1
100
t p [s]
page 4
2009-07-09
IPD110N12N3 G
IPS110N12N3 G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
250
30
10 V
8V
4.5 V
7V
5V
25
200
150
R DS(on) [mΩ]
20
I D [A]
6.5 V
100
6V
5.5 V
15
6V
10
10 V
5.5 V
50
5
5V
4.5 V
0
0
0
1
2
3
4
5
0
20
V DS [V]
40
60
80
60
80
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
200
100
80
150
g fs [S]
I D [A]
60
100
40
175 °C
50
25 °C
20
0
0
0
2
4
6
8
Rev. 2.2
0
20
40
I D [A]
V GS [V]
page 5
2009-07-09
IPD110N12N3 G
IPS110N12N3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=75 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
parameter: I D
25
4
3.5
20
830 µA
3
V GS(th) [V]
R DS(on) [mΩ]
83 µA
2.5
15
98 %
typ
10
2
1.5
1
5
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
103
Ciss
25 °C
175 °C
103
175 °C, 98%
102
I F [A]
C [pF]
Coss
102
25 °C, 98%
101
Crss
101
100
0
20
40
60
80
100
V DS [V]
Rev. 2.2
0
0.5
1
1.5
2
V SD [V]
page 6
2009-07-09
IPD110N12N3 G
IPS110N12N3 G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=67 A pulsed
parameter: T j(start)
parameter: V DD
103
10
96 V
8
60 V
102
24 V
V GS [V]
I AS [A]
6
25 °C
4
100 °C
150 °C
101
2
100
0
100
101
102
103
0
10
t AV [µs]
20
30
40
50
Q gate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
135
V GS
Qg
130
V BR(DSS) [V]
125
120
V g s(th)
115
110
Q g(th)
Q sw
Q gs
105
-60
-20
20
60
100
140
Q g ate
Q gd
180
T j [°C]
Rev. 2.2
page 7
2009-07-09
IPD110N12N3 G
IPS110N12N3 G
PG-TO-251SL : Outline
Rev. 2.2
page 8
2009-07-09
IPD110N12N3 G
IPS110N12N3 G
PG-TO252-3: Outline
Rev. 2.2
page 9
2009-07-09
IPD110N12N3 G
IPS110N12N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.2
page 10
2009-07-09
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