Sharp GP1S34 Subminiature, high sensing accuracy photointerrupter Datasheet

GP1S34
GP1S34
Subminiature, High Sensing
Accuracy Photointerrupter
■ Features
■ Outline Dimensions
1. Ultra-compact package
2. PWB mounting type
3. High sensing accuracy ( Slit width : 0.1mm )
4. With a mounting hole
( Unit : mm )
Internal connection diagram
4
3
1
2
1 Anode
2 Collector
■ Applications
4.2
1. Cameras
Slit width of
1.45 detector side : 0.1mm
1.4 1.2
3 Emitter
4 Cathode
4.2
(C0.8)
5.2
3.9
2.8
(1)
4 - 0.15 +- 0.2
0.1
4.0MIN.
Center of
light path
2. Floppy disk drives
3. Handy scanners
Rest of gate
+ 0.1
0 hole
φ 1.5 -
4 - 0.5
❈2.5
❈3.1
■ Absolute Maximum Ratings
Output
2
4
3
* Tolerance :± 0.2mm
* Burr's dimensions : 0.15MAX.
* Rest of gate: 0.3MAX.
* ( ) : Reference dimensions
* The dimensions indicated by ❈ refer
to those measured from the lead base.
( Ta = 25˚C )
Symbol
IF
VR
P
V CEO
V ECO
IC
PC
P tot
T opr
T stg
T sol
Rating
50
6
75
35
6
20
75
100
- 25 to + 85
- 40 to + 100
260
Unit
mA
V
mW
V
V
mA
mW
mW
˚C
˚C
˚C
1mm or more
Input
Parameter
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Total power dissipation
Operating temperature
Storage temperature
*1
Soldering temperature
1
Soldering area
*1 For 5 seconds
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
GP1S34
■ Electro-optical Characteristics
( Ta = 25˚C )
Parameter
Forward voltage
Reverse current
Collector dark current
Collector current
Collector-emitter saturation voltage
Rise time
Response time
Fall time
Input
Output
Transfer
characteristics
Symbol
VF
IR
I CEO
IC
V CE(sat)
tr
tf
MIN.
80
-
TYP.
1.2
50
50
MAX.
1.4
10
100
320
0.4
150
150
Fig. 2 Power Dissipation vs.
Ambient Temperature
60
120
50
100
Power dissipation P ( mW )
Forward current I F ( mA )
Fig. 1 Forward Current vs. Ambient
Temperature
Conditions
I F = 20mA
V R = 3V
V CE = 20V
V CE = 5V, I F = 5mA
I F = 10mA, I C = 50 µ A
V CE = 5V, I C = 100 µ A
R L = 1 000 Ω
40
30
20
10
P tot
P, P c
80
60
40
20
0
- 25
0
25
75 85
50
0
- 25
100
Ambient temperature T a ( ˚C )
0
25
50
75 85
100
Ambient temperature T a ( ˚C )
Fig. 3 Forward Current vs. Forward Voltage
Fig. 4 Collector Current vs.
Forward Current
500
T a = 75˚C
Forward current I F ( mA )
50˚C
100
VCE = 5V
T a = 25˚C
2.0
25˚C
0˚C
- 25˚C
Collector current I C ( mA )
200
50
20
10
5
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
2
0.2
1
0
0.5
1
1.5
2
Forward voltage V F ( V )
2.5
3
0
0
10
20
30
40
Forward current IF ( mA )
50
Unit
V
µA
nA
µA
V
µs
µs
GP1S34
Fig. 5 Collector Current vs.
Collector-emitter Voltage
Fig. 6 Collector Current vs.
Ambient Temperature
1.8
40mA
1.6
VCE=5V
IF=5mA
200
(µ A)
2.0
30mA
C
1.4
1.2
20mA
1.0
0.8
10mA
0.6
150
Collector current I
Collector current I C ( mA )
250
I F = 50mA
100
50
0.4
5mA
0.2
0
0
2
4
6
8
- 25
10
0
Collector-emitter voltage V CE ( V )
50
75 85
Fig. 8 Collector Dark Current vs.
Ambient Temperature
Fig. 7 Collector-emitter Saturation Voltage
vs. Ambient Temperature
10
I F = 10mA
I C = 50µ A
-6
V CE = 20V
5
Collector dark current I CEO (A)
Collector-emitter saturation voltage VCE(sat) ( V )
25
Ambient temperature Ta ( ˚C )
0.20
0.15
2
10
-7
5
2
10
-8
5
2
10
-9
5
0.10
- 25
2
10
0
25
50
75 85
Ambient temperature T a ( ˚C )
- 10
0
25
50
75
Ambient temperature T a ( ˚C )
100
Fig. 9 Response Time vs. Load Resistance
VCE = 5V
I C = 100µ A
T a = 25˚C
tr
Response time ( µ s )
100
tf
Test Circuit for Response Time
td
Input
VCC
10
Input
ts
RD
RL
Output
Output
10%
90%
td
1
0.5
0.3 0.5
ts
tr
1.0
5.0
10
Load resistance R L ( kΩ )
tf
GP1S34
80
0
70
+
60
Emitter Detector
I F = 5mA
VCE = 5V
T a = 25˚C
50
40
30
●
70
50
40
30
10
0
0.25
Please refer to the chapter “ Precautions for Use”.
I F = 5mA
VCE = 5V
T a = 25˚C
60
20
- 0.25
+
80
10
Shield distance L ( mm )
L= 0
90
20
- 0.5
-
Shield
100
L
Shield 0.2
max 0.2
-
90
Relative collector current ( % )
100
Fig.11 Relative Collector Current vs.
Shield Distance ( 2 )
L
Relative collector current ( % )
Fig.10 Relative Collector Current vs.
Shield Distance ( 1 )
1
2
Shield distance L ( mm )
3
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