SEMICONDUCTOR MBRD20U200CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING MODE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES A C ·Average Output Rectified Current K D L : IO=20A. ·Repetitive Peak Reverse Voltage B : VRRM=200V. ·Fast Reverse Recovery Time : trr=35ns. H J E N G F F M DIM MILLIMETERS _ 0.20 A 6.60 + _ 0.20 6.10 + B _ 0.30 5.34 + C _ 0.20 D 0.70 + _ 0.15 E 2.70 + _ 0.10 2.30 + F 0.96 MAX G 0.90 MAX H _ 0.20 1.80 + J _ 0.10 2.30 + K _ 0.10 0.50 + L _ 0.10 M 0.50 + 0.70 MIN N 0.1 MAX O MAXIMUM RATING (Ta=25℃) 1 CHARACTERISTIC Repetitive Peak Reverse Voltage Average Output Rectified Current (Note) Peak One Cycle Surge Forward Current (Non-Repetitive 60Hz) Junction Temperature Storage Temperature Range SYMBOL RATING UNIT VRRM 200 V IO 20 A IFSM 150 A Tj -40～150 ℃ Tstg -55～150 ℃ 2 3 1. ANODE 2. CATHODE 3. ANODE O DPAK (1) CATHODE 2 Note : average forward current of centertap full wave connection. 1 3 ANODE ANODE ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Peak Forward Voltage (Note) Repetitive Peak SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VFM IFM=10A - - 0.95 V IRRM VRRM=Rated - - 50 ㎂ IF=1.0A, di/dt=-30A/㎲ - - 35 ns Junction to Case - - 6 ℃/W Reverse Current (Note) Reverse Recovery Time (Note) trr Thermal Resistance (Note) Rth(j-c) Note : A value of one cell 2016. 04. 29 Revision No : 0 1/2 MBRD20U200CT IR - V R IF - V F 10,000 REVERSE CURRENT IR (uA) FORWARD CURRENT IF (A) 100 Ta=75Ƅ 10 Ta=125Ƅ 1 Ta=25Ƅ 0.1 100 Ta=75Ƅ 10 1 Ta=25Ƅ 0.1 0 0.2 0.4 0.6 0.8 FORWARD VOLTAGE VF (V) 2016. 04. 29 Ta=125Ƅ 1,000 Revision No : 0 1 0 20 40 60 80 100 120 140 160 180 200 REVERSE VOLTAGE VR (V) 2/2