PHILIPS BTA216B-800F Three quadrant triacs guaranteed commutation Datasheet

Philips Semiconductors
Product specification
Three quadrant triacs
high commutation
GENERAL DESCRIPTION
Glass passivated high commutation
triacs in a plastic envelope intended
for use in circuits where high static and
dynamic dV/dt and high dI/dt can
occur. These devices will commutate
the full rated rms current at the
maximum rated junction temperature,
without the aid of a snubber.
PINNING - TO220AB
PIN
DESCRIPTION
1
main terminal 1
2
main terminal 2
3
gate
BTA216 series B
QUICK REFERENCE DATA
SYMBOL
VDRM
IT(RMS)
ITSM
PARAMETER
MAX. MAX. MAX. UNIT
BTA216Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
PIN CONFIGURATION
500B
500
600B
600
800B
800
V
16
140
16
140
16
140
A
A
SYMBOL
tab
T2
tab
T1
G
1 23
main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
VDRM
Repetitive peak off-state
voltages
IT(RMS)
RMS on-state current
ITSM
Non-repetitive peak
on-state current
I2t
dIT/dt
IGM
VGM
PGM
PG(AV)
Tstg
Tj
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
CONDITIONS
MIN.
-
full sine wave;
Tmb ≤ 99 ˚C
full sine wave;
Tj = 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
ITM = 20 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
over any 20 ms
period
Storage temperature
Operating junction
temperature
MAX.
-500
5001
-600
6001
UNIT
-800
800
V
-
16
A
-
140
150
98
100
A
A
A2s
A/µs
-
2
5
5
0.5
A
V
W
W
-40
-
150
125
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
October 1997
1
Rev 1.200
Philips Semiconductors
Product specification
Three quadrant triacs
high commutation
BTA216 series B
THERMAL RESISTANCES
SYMBOL
PARAMETER
Rth j-mb
Thermal resistance
full cycle
junction to mounting base half cycle
Thermal resistance
in free air
junction to ambient
Rth j-a
CONDITIONS
MIN.
TYP.
MAX.
UNIT
-
60
1.2
1.7
-
K/W
K/W
K/W
MIN.
TYP.
MAX.
UNIT
T2+ G+
T2+ GT2- G-
2
2
2
18
21
34
50
50
50
mA
mA
mA
T2+ G+
T2+ GT2- G-
VD = 12 V; IGT = 0.1 A
IT = 20 A
VD = 12 V; IT = 0.1 A
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C
VD = VDRM(max); Tj = 125 ˚C
0.25
-
31
34
30
31
1.2
0.7
0.4
0.1
60
90
60
60
1.5
1.5
0.5
mA
mA
mA
mA
V
V
V
mA
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
2
IGT
Gate trigger current
IL
Latching current
IH
VT
VGT
Holding current
On-state voltage
Gate trigger voltage
ID
Off-state leakage current
VD = 12 V; IT = 0.1 A
VD = 12 V; IGT = 0.1 A
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dVD/dt
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating current
Gate controlled turn-on
time
VDM = 67% VDRM(max); Tj = 125 ˚C;
exponential waveform; gate open circuit
VDM = 400 V; Tj = 125 ˚C; IT(RMS) = 16 A;
without snubber; gate open circuit
ITM = 20 A; VD = VDRM(max); IG = 0.1 A;
dIG/dt = 5 A/µs
1000
4000
-
V/µs
-
28
-
A/ms
-
2
-
µs
dIcom/dt
tgt
2 Device does not trigger in the T2-, G+ quadrant.
October 1997
2
Rev 1.200
Philips Semiconductors
Product specification
Three quadrant triacs
high commutation
25
BTA216 series B
BT139
Ptot / W
Tmb(max) / C
20
95
IT(RMS) / A
BT139
= 180
20
99 C
101
120
1
15
90
15
107
60
10
30
10
113
5
119
5
0
0
5
10
IT(RMS) / A
125
20
15
0
-50
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
1000
50
Tmb / C
100
150
Fig.4. Maximum permissible rms current IT(RMS) ,
versus mounting base temperature Tmb.
BTA216
ITSM / A
0
50
BT139
IT(RMS) / A
40
dI T /dt limit
30
100
20
I TSM
IT
T
10
time
Tj initial = 25 C max
10
10us
100us
1ms
T/s
10ms
0
0.01
100ms
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
150
ITSM / A
100
1.6
ITSM
T
10
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb ≤ 99˚C.
BT139
IT
0.1
1
surge duration / s
VGT(Tj)
VGT(25 C)
BT136
1.4
time
Tj initial = 25 C max
1.2
1
50
0.8
0.6
0
1
10
100
Number of cycles at 50Hz
0.4
-50
1000
Fig.3. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
October 1997
0
50
Tj / C
100
150
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
3
Rev 1.200
Philips Semiconductors
Product specification
Three quadrant triacs
high commutation
3
IGT(Tj)
IGT(25 C)
BTA216 series B
50
BTA216
T2+ G+
T2+ GT2- G-
2.5
Tj = 125 C
Tj = 25 C
typ
40
2
BT139
IT / A
max
Vo = 1.195 V
Rs = 0.018 Ohms
30
1.5
20
1
10
0.5
0
0
-50
0
50
Tj / C
100
150
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
3
IL(Tj)
IL(25 C)
0
0.5
1
1.5
VT / V
2
2.5
3
Fig.10. Typical and maximum on-state characteristic.
10
TRIAC
2.5
BT139
Zth j-mb (K/W)
1
unidirectional
bidirectional
2
0.1
1.5
P
D
1
tp
0.01
0.5
t
0
-50
0
50
Tj / C
100
0.001
10us
150
IH(Tj)
IH(25C)
1ms
10ms
tp / s
0.1s
1s
10s
Fig.11. Transient thermal impedance Zth j-mb, versus
pulse width tp.
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
3
0.1ms
1000
TRIAC
dIcom/dt (A/ms)
BTA216
2.5
100
2
1.5
10
1
0.5
0
-50
0
50
Tj / C
100
1
20
150
60
80
Tj / C
100
120
140
Fig.12. Typical, critical rate of change of commutating
current dIcom/dt versus junction temperature.
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
October 1997
40
4
Rev 1.200
Philips Semiconductors
Product specification
Three quadrant triacs
high commutation
BTA216 series B
MECHANICAL DATA
Dimensions in mm
4,5
max
Net Mass: 2 g
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max 1 2 3
(2x)
0,9 max (3x)
2,54 2,54
0,6
2,4
Fig.13. TO220AB; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1997
5
Rev 1.200
Philips Semiconductors
Product specification
Three quadrant triacs
high commutation
BTA216 series B
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 1997
6
Rev 1.200
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