Fairchild FSCQ1565RPSYDTU Green mode fairchild power switch (fps) for quasi-resonant switching converter Datasheet

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FSCQ1565RP
Green Mode Fairchild Power Switch (FPSTM) for
Quasi-Resonant Switching Converter
Features
• Optimized for Quasi-Resonant Converter (QRC)
• Advanced Burst-Mode operation for under 1 W standby
power consumption
• Pulse by Pulse Current Limit (11.5A)
• Over load protection (OLP) - Auto restart
• Over voltage protection (OVP) - Auto restart
• Abnormal Over Current Protection (AOCP) - Latch
• Internal Thermal Shutdown (TSD) - Latch
• Under Voltage Lock Out (UVLO) with hysteresis
• Low Startup Current (typical : 25uA)
• Low Operating Current (typical : 7mA)
• Internal High Voltage SenseFET
• Built-in Soft Start (20ms)
• Extended Quasi-resonant Switching for Wide Load Range
Application
OUTPUT POWER TABLE
230VAC ±15%(2)
PRODUCT
Open
Frame(1)
85-265VAC
Open Frame(1)
FSCQ0765RT
100 W
85 W
FSCQ1265RT
170 W
140 W
FSCQ1565RT
210 W
170 W
FSCQ1565RP
250 W
210 W
Table 1. Notes: 1. Maximum practical continuous power
in an open frame design at 50°C ambient. 2. 230 VAC or
100/115 VAC with doubler.
Typical Circuit
• CTV
• DVD Receiver
• Audio Power Supply
Description
In general, Quasi-Resonant Converter (QRC) shows lower
EMI and higher power conversion efficiency compared to the
conventional hard switched converter with a fixed switching
frequency. Therefore, it is well suited for applications that are
sensitive to the noise, such as color TV and audio. The
FSCQ1565RP is an integrated Pulse Width Modulation
(PWM) controller and Sense FET specifically designed for
Quasi-resonant off-line Switch Mode Power Supplies
(SMPS) with minimal external components. The PWM
controller includes integrated fixed frequency oscillator, under
voltage lockout, leading edge blanking (LEB), optimized gate
driver, internal soft start, temperature compensated precise
current sources for a loop compensation and self protection
circuitry. Compared with discrete MOSFET and PWM
controller solution, it can reduce total cost, component count,
size and weight simultaneously increasing efficiency, productivity, and system reliability. This device is a basic platform
well suited for cost effective designs of Quasi resonant
switching flyback converters.
Vo
AC
IN
Drain
FSCQ1565RP
PWM
Sync
GND
VFB
Vcc
Figure 1. Typical Flyback Application
Rev.1.0.0
©2005 Fairchild Semiconductor Corporation
FSCQ1565RP
Internal Block Diagram
Vcc
3
Sync
5
Drain
1
+
Threshold
Quasi-resonant
(QR) switching
controller
-
+
fs
9V/15V
-
Soft start
Burst mode
Controller
VBurst
Normal
operation
Vcc
Auxiliary
Vref
OSC
Burst
Switching
Vref
Vref
IBFB
IFB
Main bias
Normal
operation
Vref
Internal
bias
IB
Idelay
FB
Vcc
good
4.6V/2.6V : Normal QR
3.0V/1.8V : Extended QR
PWM
4
2.5R
S
Q
R
Q
Gate
driver
R
LEB
600ns
VSD
Sync
Vovp
S
Vcc good
R
Q
Q
AOCP
Q
S
Q
R
2 GND
TSD
Power off Reset
Figure 2. Functional Block Diagram of FSCQ1565RP
2
Vocp
FSCQ1565RP
Pin Definitions
Pin Number
Pin Name
1
Drain
2
GND
This pin is the control ground and the SenseFET source.
Vcc
This pin is the positive supply input. This pin provides internal operating
current for both start-up and steady-state operation.
Vfb
This pin is internally connected to the inverting input of the PWM comparator.
The collector of an opto-coupler is typically tied to this pin. For stable
operation, a capacitor should be placed between this pin and GND. If the
voltage of this pin reaches 7.5V, the over load protection triggers resulting in
shutdown of the FPS.
Sync
This pin is internally connected to the sync detect comparator for quasi
resonant switching. In normal quasi-resonant operation, the threshold of the
sync comparator is 4.6V/2.6V. Meanwhile, the sync threshold is changed to
3.0V/1.8V in extended quasi-resonant operation.
3
4
5
Pin Function Description
High voltage power SenseFET drain connection.
Pin Configuration
TO-3PF-7L
5.Sync
4.Vfb
3.Vcc
2.GND
1.Drain
Figure 3. Pin Configuration (Top View)
3
FSCQ1565RP
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Parameter
Drain-Source (GND) Voltage
(1)
Drain-Gate Voltage (RGS=1MΩ)
Gate-Source (GND) Voltage
(2)
Symbol
Value
Unit
VDSS
650
V
VDGR
650
V
VGS
±30
V
IDM
45
ADC
EAS
1050
mJ
Continuous Drain Current (Tc = 25°C)
ID
8.3
ADC
Continuous Drain Current (TC=100°C)
ID
5.5
ADC
VCC
20
V
Drain Current Pulsed
Single Pulsed Avalanche Energy (3)
Supply Voltage
Vsync
-0.3 to 13V
V
VFB
-0.3 to VCC
V
Total Power Dissipation
PD
98
W
Operating Junction Temperature
TJ
+150
°C
Operating Ambient Temperature
TA
-25 to +85
°C
Storage Temperature Range
TSTG
-55 to +150
°C
Thermal Resistance
Rthjc
1.28
°C/W
ESD Capability, HBM Model (All pins excepts
for Vfb)
-
2.0
(Vfb=1.7kV)
kV
ESD Capability, Machine Model (All pins
excepts for Vfb)
-
300
(Vfb=170V)
V
Analog Input Voltage Range
Notes:
1. Tj = 25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L = 21mH, VDD = 50V, RG = 25Ω, starting Tj = 25°C
4
FSCQ1565RP
Electrical Characteristics (SenseFET Part)
(Ta=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Static Drain-source on Resistance (Note) RDS(ON)
Input Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn on Delay Time
td(on)
Turn Off Delay Time
Fall Time
VGS = 0V, ID = 250µA
tr
td (off)
tf
Total Gate Charge
(Gate-Source+Gate-Drain)
Qg
Gate-Source Charge
Qgs
Gate-Drain (Miller) Charge
Qgd
Min.
Typ. Max.
Unit
650
-
-
V
VDS = Max, Rating, VGS = 0V
-
-
200
µA
VDS= 0.8*Max., Rating
VGS = 0V, TC = 85°C
-
-
300
µA
VGS = 10V, ID = 2.3A
-
0.53
0.7
Ω
-
3050 3965
Ciss
Output Capacitance
Rise Time
Condition
VGS = 0V, VDS = 25V,
f = 1MHz
VDD= 0.5BVDSS, ID= 7.0A
(MOSFET switching
times are essentially
independent of operating
temperature)
VGS = 10V, ID = 7.0A,
VDS = 0.5BVDSS (MOSFET
Switching times are essentially
independent of operating
temperature)
-
220
286
-
40
52
-
50
75
-
130
179
-
430
569
-
135
186
-
127
165
-
16
21
-
52
68
pF
ns
nC
Note:
1. Pulse test : Pulse width ≤ 300µS, duty ≤ 2%
5
FSCQ1565RP
Electrical Characteristics (Continued)
(Ta=25°C unless otherwise specified)
Parameter
Symbol
Condition
Min. Typ. Max. Unit
UVLO SECTION
Vcc Start Threshold Voltage
VSTART
VFB = GND
14
15
16
V
Vcc Stop Threshold Voltage
VSTOP
VFB = GND
8
9
10
V
Drain To PKG Breakdown Voltage (Note4)
BVpkg
60HZ AC, Ta = 25°C
3500
-
-
V
Drain To Source Breakdown Voltage
BVdss
Ta = 25°C
650
-
-
V
Vdrain = 400V, Ta = 25°C
-
-
200
uA
-
SENSEFET SECTION
Drain To Source Leakage Current
Idss
OSCILLATOR SECTION
Initial Frequency
FOSC
Voltage Stability
FSTABLE
18
20
22
kHz
12V ≤ Vcc ≤ 23V
0
1
3
%
-25°C ≤ Ta ≤ 85°C
0
±5
±10
%
Temperature Stability (Note2)
∆FOSC
Maximum Duty Cycle
DMAX
-
92
95
98
%
Minimum Duty Cycle
DMIN
-
-
-
0
%
FEEDBACK SECTION
Feedback Source Current
IFB
VFB = 0.8V
0.5
0.65
0.8
mA
Shutdown Feedback Voltage
VSD
Vfb ≥ 6.9V
7.0
7.5
8.0
V
IDELAY
VFB = 5V
4
5
6
µA
Shutdown Delay Current
PROTECTION SECTION
Over Voltage Protection
VOVP
Vsync ≥ 11V
11
12
13
V
Over Current Latch Voltage (Note2)
VOCL
-
0.9
1.0
1.1
V
TSD
-
140
-
°C
Thermal Shutdown Temp (Note4)
Note:
1. These parameters is the current flowing in the Control IC.
2. These parameters, although guaranteed, are tested only in EDS (wafer test) process.
3. These parameters indicate Inductor Current.
4. These parameters, although guaranteed at the design, are not tested in mass production.
6
FSCQ1565RP
Electrical Characteristics (Continued)
(Ta=25°C unless otherwise specified)
Parameter
Symbol
Condition
Min. Typ. Max.
Unit
Sync SECTION
Sync Threshold in normal QR (H)
VSH1
Vcc = 16V, Vfb = 5V
4.2
4.6
5.0
V
Sync Threshold in normal QR (L)
VSL1
Vcc = 16V, Vfb = 5V
2.3
2.6
2.9
V
Sync Threshold in extended QR (H)
VSH2
Vcc = 16V, Vfb = 5V
2.7
3.0
3.3
V
Sync Threshold in extended QR (L)
VSL2
Vcc = 16V, Vfb = 5V
1.6
1.8
2.0
V
Extended QR enable frequency
FSYH
-
90
-
kHz
Extended QR disable frequency
FSYL
-
45
-
kHz
BURST MODE SECTION
Burst Mode Enable Feedback Voltage
VBEN
0.25
0.40
0.55
V
Burst Mode Feedback Source Current
IBFB
60
100
140
uA
Burst Mode switching Time
TBS
VFB = 0V
1.2
1.4
1.6
ms
Burst Mode Hold Time
TBH
VFB = 0V
1.2
1.4
1.6
ms
18
20
22
ms
SOFTSTART SECTION
Soft start Time (Note2)
TSS
CURRENT LIMIT(SELF-PROTECTION)SECTION
Peak Current Limit (Note3)
ILIM
-
Burst Mode Peak Current Limit (Note4)
IBPK
-
10.12 11.5 12.88
0.6
1.0
A
1.4
A
TOTAL DEVICE SECTION
ISTART
VCC = VSTART-0.1V
-
25
50
uA
ISL
VCC = VSTOP-0.1V
-
50
100
uA
- In normal operation
IOP
Vfb = 2V, VCC = 18V
-
7
9
mA
- In burst mode (without switching)
IOB
Vfb = GND, VCC = 18V
-
0.25
0.50
mA
Startup Current
Sustain Latch Current
Operating Supply Current (Note1)
Note:
1. These parameters is the current flowing in the Control IC.
2. These parameters, although guaranteed, are tested only in EDS (wafer test) process.
3. These parameters indicate Inductor Current.
4. These parameters, although guaranteed at the design, are not tested in mass production.
7
FSCQ1565RP
Comparison Between KA5Q1565RF and FSCQ1565RP
Function
KA5Q1565RF
FSCQ1565RP
Startup Current
Max. 200uA
Max. 50uA
Lower standby power consumption
Operating supply Current
Typ. 10mA
Typ. 7mA
Operating current is reduced in burst
operation to minimize standby power
consumption
- Normal operation : 7mA
- Burst mode with switching : 7mA
- Burst mode without switching : 0.25mA
Switching in Burst mode
Quasi-resonant
switching
Fixed frequency
switching (20kHz)
Output regulation in
standby mode
Vcc control with
hysteresis
Output voltage
feedback control
Output Voltage drop in
burst mode
about half
Any level
Primary side regulation
Available
N/A
Soft start
N/A
Available
Internal soft-start (20ms)
Extended Quasiresonant switching
N/A
Available
- Guarantees wide load range
- Improved efficiency at high line input
TO-3PF-5L
TO-3PF-7L
Package Type
8
FSCQ1565RP Advantages
Easy to determine the output voltage in the
standby mode
Lower power consumption in the standby
mode through larger output voltage drop
FSCQ1565RP
Electrical characteristics
Burst-mode Supply Current( Non-Switching)
Operating Supply Current
1.4
Normalized to 25℃
Normalized to 25℃
1.2
1.0
0.8
-50
0
50
100
1.2
1.0
0.8
0.6
-50
150
0
50
Temp[℃ ]
Normalized to 25℃
Normalized to 25℃
1.10
1.2
1.0
0.8
0.6
0
50
Temp[℃ ]
100
1.05
1.00
0.95
0.90
-50
150
0
100
150
Initial Frequency
1.10
Normalized to 25℃
1.10
Normalized to 25℃
50
Temp[℃ ]
Stop Threshold Voltage
1.05
1.00
0.95
0.90
-50
150
Start Threshold Voltage
Start-Up Current
1.4
-50
100
Temp[℃ ]
0
50
Temp[℃ ]
100
150
1.05
1.00
0.95
0.90
-50
0
50
100
150
Temp[℃]
9
FSCQ1565RP
Electrical characteristics (Continued)
Maximum Duty Cycle
Over Voltage Protection
1.10
Normalized to 25℃
Normalized to 25℃
1.10
1.05
1.00
0.95
0.90
-50
0
50
100
1.05
1.00
0.95
0.90
-50
150
0
Temp[℃ ]
Shutdown Delay Current
Normalized to 25℃
Normalized to 25℃
1.1
1.0
0.9
0
50
100
1.05
1.00
0.95
0.90
-50
150
0
50
100
150
Temp[℃ ]
Temp[℃ ]
Feedback Source Current
Burst_mode Feedback Source Current
1.2
Normalized to 25℃
1.2
Normalized to 25℃
150
1.10
0.8
-50
10
100
Shutdown Feedback Voltage
1.2
1.1
1.0
0.9
0.8
-50
50
Temp[℃ ]
0
50
Temp[℃ ]
100
150
1.1
1.0
0.9
0.8
-50
0
50
Temp[℃ ]
100
150
FSCQ1565RP
Electrical characteristics (Continued)
Feedback Offset Voltage
Burst_Mode Enable Feedback Voltage
1.4
1.2
Normalized to 25℃
Normalized to 25℃
1.4
1.0
0.8
0.6
-50
0
50
Temp[℃ ]
100
1.2
1.0
0.8
0.6
-50
150
Normalized to 25℃
Normalized to 25℃
150
1.10
1.05
1.00
0.95
0
50
100
1.05
1.00
0.95
0.90
-50
150
0
Temp[℃]
50
100
150
Temp[℃ ]
Sync. Threshold in Extended QR(H)
Sync. Threshold in Extended QR(L)
1.10
1.10
Normalized to 25℃
Normalized to 25℃
100
Sync. Threshold in Normal QR(L)
Sync. Threshold in Normal QR(H)
1.05
1.00
0.95
0.90
-50
50
Temp[℃]
1.10
0.90
-50
0
0
50
Temp[℃ ]
100
150
1.05
1.00
0.95
0.90
-50
0
50
100
150
Temp[℃ ]
11
FSCQ1565RP
Electrical characteristics (Continued)
Extended QR Disable Frequency
1.10
1.10
1.05
1.05
Normalized to 25℃
℃
Normalized to 25℃
℃
Extended QR Enable Freqency
1.00
0.95
0.90
-50
0
50
100
Temp[℃
℃
]
150
1.00
0.95
0.90
-50
50
100
150
Tem p[℃
℃]
Maximum Safe Operating Aree
Pulse-by-pulse Current Limit
1.10
0
10
2
Normalized to 25℃
℃
Operation in This Area
is Limited by R DS(on)
100 us
1.05
ID, Drain Current [A]
10
1.00
0.95
1
1 ms
10 ms
DC
10
0
? Notes :
o
1. T C = 25 C
-1
10
o
2. T J = 150 C
3. Single Pulse
-2
10
0.90
-50
0
50
100
0
1
10
150
Temp[℃
℃]]
[℃
10
1200
AVALANCHE ENERGY, EAS[mJ]
Z? JC(t), Thermal Response
3
10
Maximum Avalanch Energy
Transieus Thermal Response
0
10
D=0.5
-1
? Notes :
1. Z? JC(t) = 0.46 ? /W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Z? JC(t)
0.2
10
0.1
0.05
0.02
0.01
-2
10
single pulse
-5
10
-4
10
-3
10
-2
10
-1
10
t1, Square Wave Pulse Duration [sec]
12
2
10
VDS, Drain-Source Voltage [V]
0
10
10
1
1000
800
600
400
200
0
25
50
75
100
125
o
Initial Junction Temperature, TJ [ C]
150
FSCQ1565RP
Functional Description
1. Startup : Figure 4 shows the typical startup circuit and
transformer auxiliary winding for FSCQ1565RP application.
Before FSCQ1565RP begins switching, FSCQ1565RP
consumes only startup current (typically 25uA) and the
current supplied from the AC line charges the external
capacitor (Ca1) that is connected to the Vcc pin. When Vcc
reaches start voltage of 15V (VSTART), FSCQ1565RP begins
switching, and the current consumed by FSCQ1565RP
increases to 4mA. Then, FSCQ1565RP continues its normal
switching operation and the power required for this device is
supplied from the transformer auxiliary winding, unless Vcc
drops below the stop voltage of 9V (VSTOP). To guarantee
the stable operation of the control IC, Vcc has under voltage
lockout (UVLO) with 6V hysteresis. Figure 5 shows the
relation between the FSCQ1565RP operating supply current
and the supply voltage (Vcc).
The minimum average of the current supplied from the AC is
given by
min
I sup
avg
 2 ⋅ V ac
V start 1
- ⋅ ---------=  ----------------------------- – ------------2  R str
π

where Vacmin is the minimum input voltage, Vstart is the
FSCQ1565RP start voltage (15V) and Rstr is the startup
resistor. The startup resistor should be chosen so that Isupavg
is larger than the maximum startup current (50uA).
Once the resistor value is determined, the maximum loss in
the startup resistor is obtained as
max 2
max
2

) + V start
2 2 ⋅ V start ⋅ V ac
1  ( V ac
-
- – ----------------------------------------------------Loss = ---------- ⋅  -------------------------------------------------R str 
π
2

where Vacmax is the maximum input voltage. The startup
resistor should have proper rated dissipation wattage.
2. Synchronization : FSCQ1565RP employs quasi-resonant
switching technique to minimize the switching noise and loss.
In this technique, a capacitor (Cr) is added between the
MOSFET drain and source as shown in Figure 6. The basic
waveforms of quasi-resonant converter are shown in Figure
7. The external capacitor lowers the rising slop of drain
voltage to reduce the EMI caused when the MOSFET turns
off. In order to minimize the MOSFET switching loss, the
MOSFET should be turned on when the drain voltage reaches
its minimum value as shown in Figure 7.
C DC
1N4007
AC line
(V acmin - V acmax)
Isup
Rstr
Da
Vcc
FSCQ1565RP
C a2
C a1
C DC
+
V DC
-
Np
Ns
Lm
Vo
Figure 1. Startup circuit
Drain
Cr
Ids
Sync
Icc
+
V ds
-
GND
V co
V cc
Da
R cc
C a1
C a2
Na
D SY
4mA
R SY1
Power Down
Power Up
C SY
25uA
R SY2
Vcc
Vstop=9V
Vstart=15V
Vz
Figure 3. Synchronization circuit
Figure 2. Relation between operating supply current and
Vcc voltage
13
FSCQ1565RP
Vds
MOSFET
off
MOSFET
on
2V R O
Vgs
TQ
VRO
Vs ync
VRO
Vds
V sypk
VDC
Vrh (4 .6V)
Vrf (2 .6V)
TR
Ids
Ipk
Figure 4. Quasi-resonant operation waveforms
MOS FET Gate
ON
ON
Figure 5. Normal quasi-resonant operation waveforms
The minimum drain voltage is indirectly detected by
monitoring the Vcc winding voltage as shown in Figure 6
and 8. The voltage divider RSY1 and RSY2 should be chosen so
that the peak voltage of sync signal (Vsypk) is lower than the
OVP voltage (12V) in order to avoid triggering OVP in
normal operation. It is typical to set Vsypk to be lower than
OVP voltage by 3-4 V. In order to detect the optimum time
to turn on MOSFET, the sync capacitor (CSY) should be
determined so that TR is the same with TQ as shown in Figure
8. The TR and TQ are given as, respectively
Switching
frequency
Extended QR operation
90kHz
Normal QR operation
45kHz
TR
V co
R SY2
= R SY2 ⋅ C SY ⋅ ln  --------- ⋅ -----------------------------------
 2.6 R SY1 + R SY2
T Q = π ⋅ L m ⋅ C eo
N a ⋅ ( V o + V FO )
V co = ---------------------------------------- – V Fa
Ns
where Lm is the primary side inductance of the transformer,
Ns and Na are the number of turns for the output winding
and Vcc winding, respectively, VFo and VFa are the diode
forward voltage drops of the output winding and Vcc
winding, respectively, and Ceo is the sum of the output
capacitance of MOSFET and external capacitor Cr.
14
Output power
Figure 6. Extended quasi-resonant operation
In general, quasi-resonant converter has a limitation in a
wide load range application, since the switching frequency
increases as the output load decreases, resulting in a severe
switching loss in the light load condition. In order to get over
this limitation, FSCQ1565RP employs extended quasiresonant switching operation. Figure 9 shows the mode
change between normal quasi-resonant operation and
extended quasi-resonant operation. In the normal quasiresonant operation, the FSCQ1565RP enters into the
extended quasi-resonant operation when the switching
frequency exceeds 90kHz as the load reduces. Then, the
MOSFET is turned on, when the drain voltage reaches the
second minimum level as shown in Figure 10, which reduces
the switching frequency.
FSCQ1565RP
Once FSCQ1565RP enters into extended quasi-resonant
operation, the first sync signal is ignored. After the first sync
signal is applied, the sync threshold levels are changed from
4.6V and 2.6V to 3V and 1.8V, respectively, and the
MOSFET turn-on time is synchronized to the second sync
signal. The FSCQ1565RP goes back to its normal quasiresonant operation when the switching frequency reaches
45kHz as the load increases.
internal Sense FET is turned on, there usually exists a high
current spike through the Sense FET, caused by external
resonant capacitor across the MOSFET and secondary-side
rectifier reverse recovery. Excessive voltage across the
Rsense resistor would lead to incorrect feedback operation in
the current mode PWM control. To counter this effect, the
FSCQ1565RP employs a leading edge blanking (LEB)
circuit. This circuit inhibits the PWM comparator for a short
time (TLEB) after the Sense FET is turned on.
Vds
Vcc
2VRO
Vref
Idelay
IFB
Vfb
Vo
4
H11A817A
CB
D2
2.5R
+
Vfb*
Vsync
KA431
3V
Gate
driver
R
-
4.6V
2.6V
SenseFET
OSC
D1
VSD
OLP
Rsense
1.8V
Figure 8. Pulse width modulation (PWM) circuit
MOSFET Gate
ON
ON
Figure 7. Extended quasi-resonant operation waveforms
3. Feedback Control : FSCQ1565RP employs current mode
control, as shown in Figure 11. An opto-coupler (such as the
H11A817A) and shunt regulator (such as the KA431) are
typically used to implement the feedback network.
Comparing the feedback voltage with the voltage across the
Rsense resistor plus an offset voltage makes it possible to
control the switching duty cycle. When the reference pin
voltage of the KA431 exceeds the internal reference voltage
of 2.5V, the H11A817A LED current increases, thus pulling
down the feedback voltage and reducing the duty cycle. This
event typically happens when the input voltage is increased
or the output load is decreased.
3.1 Pulse-by-pulse current limit: Because current mode
control is employed, the peak current through the Sense FET
is limited by the inverting input of PWM comparator (Vfb*)
as shown in Figure 11. The feedback current (IFB) and
internal resistors are designed so that the maximum cathode
voltage of diode D2 is about 2.8V, which occurs when all IFB
flows through the internal resistors. Since D1 is blocked
when the feedback voltage (Vfb) exceeds 2.8V, the
maximum voltage of the cathode of D2 is clamped at this
voltage, thus clamping Vfb*. Therefore, the peak value of
the current through the Sense FET is limited.
4. Protection Circuit : The FSCQ1565RP has several self
protective functions such as over load protection (OLP),
abnormal over current protection (AOCP), over voltage
protection (OVP) and thermal shutdown (TSD). OLP and
OVP are auto-restart mode protection, while TSD and
AOCP are latch mode protection. Because these protection
circuits are fully integrated into the IC without external
components, the reliability can be improved without
increasing cost.
-Auto-restart mode protection: Once the fault condition is
detected, switching is terminated and the Sense FET remains
off. This causes Vcc to fall. When Vcc falls down to the
under voltage lockout (UVLO) stop voltage of 9V, the
protection is reset and FSCQ1565RP consumes only startup
current (25uA). Then, Vcc capacitor is charged up, since the
current supplied through the startup resistor is larger than the
current that FPS consumes. When Vcc reaches the start
voltage of 15V, FSCQ1565RP resumes its normal operation.
If the fault condition is not removed, the SenseFET remains
off and Vcc drops to stop voltage again. In this manner, the
auto-restart can alternately enable and disable the switching
of the power Sense FET until the fault condition is
eliminated (see Figure 12).
-Latch mode protection: Once protection triggers,
switching is terminated and the Sense FET remains off until
the AC power line is un-plugged. Then, Vcc continues
charging and discharging between 9V and 15V. The latch is
reset only when Vcc is discharged to 6V by un-plugging the
Ac power line.
3.2 Leading edge blanking (LEB) : At the instant the
15
FSCQ1565RP
Vds
Power
on
Fault
occurs
V FB
Fault
removed
Over load protection
7.5V
Vcc
2.8V
15V
T12= CB*(7.5-2.8)/Idelay
9V
T1
T2
t
Figure 10. Over load protection
Iop
t
Normal
operation
Fault
situation
Normal
operation
Figure 9. Auto restart mode protection
4.1 Over Load Protection (OLP) : Overload is defined as
the load current exceeding its normal level due to an
unexpected abnormal event. In this situation, the protection
circuit should trigger in order to protect the SMPS. However,
even when the SMPS is in the normal operation, the over
load protection circuit can be triggered during the load
transition. In order to avoid this undesired operation, the
over load protection circuit is designed to trigger after a
specified time to determine whether it is a transient situation
or an overload situation. Because of the pulse-by-pulse
current limit capability, the maximum peak current through
the Sense FET is limited, and therefore the maximum input
power is restricted with a given input voltage. If the output
consumes more than this maximum power, the output
voltage (Vo) decreases below the set voltage. This reduces
the current through the opto-coupler LED, which also
reduces the opto-coupler transistor current, thus increasing
the feedback voltage (Vfb). If Vfb exceeds 2.8V, D1 is
blocked and the 5uA current source starts to charge CB
slowly up to Vcc. In this condition, Vfb continues increasing
until it reaches 7.5V, when the switching operation is
terminated as shown in Figure 13. The delay time for
shutdown is the time required to charge CB from 2.8V to
7.5V with 5uA. In general, a 20 ~ 50 ms delay time is typical
for most applications. This protection is implemented in auto
restart mode.
16
2.5R
OSC
PWM
R
S
Q
R
Q
Gate
driver
LEB
Rsense
2
AOCP
-
25uA
4.2 Abnormal Over Current Protection (AOCP) : When
the secondary rectifier diodes or the transformer pins are
shorted, a steep current with extremely high di/dt can flow
through the SenseFET during the LEB time. Even though the
FSCQ1565RP has OLP (Over Load Protection), it is not
enough to protect the FSCQ1565RP in that abnormal case,
since sever current stress will be imposed on the SenseFET
until OLP triggers. The FSCQ1565RP has an internal AOCP
(Abnormal Over Current Protection) circuit as shown in
Figure 14. When the gate turn-on signal is applied to the
power Sense FET, the AOCP block is enabled and monitors
the current through the sensing resistor. The voltage across
the resistor is then compared with a preset AOCP level. If
the sensing resistor voltage is greater than the AOCP level,
the set signal is applied to the latch, resulting in the
shutdown of SMPS. This protection is implemented in latch
mode.
+
4mA
Vaocp
GND
Figure 11. AOCP block
4.3 Over voltage Protection (OVP) : If the secondary side
feedback circuit were to malfunction or a solder defect
caused an open in the feedback path, the current through the
opto-coupler transistor becomes almost zero. Then, Vfb
climbs up in a similar manner to the over load situation,
FSCQ1565RP
forcing the preset maximum current to be supplied to the
SMPS until the over load protection triggers. Because more
energy than required is provided to the output, the output
voltage may exceed the rated voltage before the over load
protection triggers, resulting in the breakdown of the devices
in the secondary side. In order to prevent this situation, an
over voltage protection (OVP) circuit is employed. In
general, the peak voltage of the sync signal is proportional to
the output voltage and the FSCQ1565RP uses sync signal
instead of directly monitoring the output voltage. If sync
signal exceeds 12V, an OVP is triggered resulting in a
shutdown of SMPS. In order to avoid undesired triggering of
OVP during normal operation, the peak voltage of sync
signal should be designed to be below 12V. This protection
is implemented in auto restart mode.
V o2
5. Soft Start : The FSCQ1565RP has an internal soft start
circuit that increases PWM comparator inverting input
voltage together with the SenseFET current slowly after it
starts up. The typical soft start time is 20msec. The pulse
width to the power switching device is progressively
increased to establish the correct working conditions for
transformers, inductors, and capacitors. It also helps to
prevent transformer saturation and reduce the stress on the
secondary diode during startup. For a fast build up of the
output voltage, an offset is introduced in the soft-start
reference current.
6. Burst operation : In order to minimize the power
consumption in the standby mode, FSCQ1565RP employs
burst operation. Once FSCQ1565RP enters into burt mode,
FSCQ1565RP allows all output voltages and effective
switching frequency to be reduced. Figure 15 shows the
typical feedback circuit for C-TV applications. In normal
operation, the picture on signal is applied and the transistor
Q1 is turned on, which de-couples R3, Dz and D1 from the
feedback network. Therefore, only Vo1 is regulated by the
feedback circuit in normal operation and determined by R1
and R2 as
V o1
norm
= V Z + 0.7 + 2.5
VO2
Linear
Regulator
VO1 (B+)
RD
R1
CF
KA431
A
Micom
Dz
Rbias
C
4.4 Thermal Shutdown (TSD) : The SenseFET and the
control IC are built in one package. This makes it easy for
the control IC to detect the abnormal over temperature of the
SenseFET. When the temperature exceeds approximately
150°C, the thermal shutdown triggers. This protection is
implemented in latch mode.
stby
RF
D1
R3
Q1
Picture ON
R
R2
Figure 12. Typical feedback circuit to drop output voltage
in standby mode
Figure 16 shows the burst mode operation waveforms. When
the picture ON signal is disabled, Q1 is turned off and R3
and Dz are connected to the reference pin of KA431 through
D1. Before Vo2 drops to Vo2stby, the voltage on the reference
pin of KA431 is higher than 2.5V, which increases the
current through the opto LED. This pulls down the feedback
voltage (VFB) of FSCQ1565RP and forces FSCQ1565RP to
stop switching. If the switching is disabled longer than
1.4ms, FSCQ1565RP enters into burst operation and the
operating current is reduced from 4mA (IOP) to 0.35mA
(IOB). Since there is no switching, Vo2 decrease until it
reaches Vo2stby. As Vo2 reaches Vo2stby, the current through
the opto LED decreases allowing the feedback voltage to
rise. When the feedback voltage reaches 0.4V, FSCQ1565RP
resumes switching with a predetermined peak drain current
of 0.9A. After burst switching for 1.4ms, FSCQ1565RP
stops switching and checks the feedback voltage. If the
feedback voltage is below 0.4V, FSCQ1565RP stops
switching until the feedback voltage increases to 0.4V. If the
feedback voltage is above 0.4V, FSCQ1565RP goes back to
the normal operation.
R1 + R2
= 2.5 ⋅  ---------------------
 R2 
In standby mode, the picture on signal is disabled and the
transistor Q1 is turned off, which couples R3, Dz and D1 to
the reference pin of KA431. Then, Vo2 is determined by the
zener diode breakdown voltage. Assuming that the forward
voltage drop of D1 is 0.7V, Vo2 in standby mode is approximately given by
17
FSCQ1565RP
(a)
(b)
(c)
Vo2 norm
V o2 stby
V FB
0.4V
Iop
I OP (4m A)
I OB (0.35m A)
Vds
Picture On
Picture On
Picture Off
Burst Mode
0.4V
0.4V
0.3V
VFB
0.4V
Vds
1.4ms
Ids
1.4ms
0.9A
1.4ms
0.9A
(a) M ode change to Burst operation
(b) Burst operation
(c) M ode change to Normal operation
Figure 13. Waveforms of burst operation
18
FSCQ1565RP
Typical application circuit
Application
Output power
Input voltage
Output voltage (Max current)
8.5V (1A)
C-TV
210W
Universal input
15V (1A)
(85-265Vac)
126V (0.9A)
24V (2A)
Features
•
•
•
•
•
•
High efficiency (>80% at 85Vac input)
Wider load range through the extended quasi-resonant operation
Low standby mode power consumption (<1W)
Low component count
Enhanced system reliability through various protection functions
Internal soft-start (20ms)
Key Design Notes
• 24V output is designed to drop to around 7V in standby mode
1. Schematic
T1
EER4942
RT101
5D-11
3
R101
100kΩ
Ω
0.25W
BD101
R106 C104
1kΩ
Ω 10uF
1W 50V
SYNC
3 Vcc IC101
5
FSCQ1565RP
GND
2
C103
10uF
50V
FB
4
C106
47nF
50V
C210
470pF
1kV
D105
1N4937
8.5V, 1A
13
C107
1nF
1kV
12
C209
470pF
1kV
C205
1000uF
35V
D202
EGP30J
D106
1N4148
R105
470Ω
Ω
0.25W
R104 D103 R103 6
1.5kΩ
Ω 1N4937 5.1Ω
Ω
0.25W
0.25W
14
15
16
C105
2.7nF
50V
C207
470pF
1kV
L202
C201 BEAD
220uF
160V
140V, 0.9A
C202
100uF
160V
D203
EGP30D
24V, 2A
17
7
LF101
18
OPTO101
817A
C208
470pF
1kV
R202
1kΩ
Ω
0.25W
C301
3.3nF
C203
2200uF
35V
VR201
30kΩ
Ω
R201
1kΩ
Ω
0.25W
C101
330nF
275VAC
FUSE
250V
5.0A
C204
1000uF
35V
D204
EGP20D
4
1
Drain
ZD102
18V
1W
11
BEAD101
R102
150kΩ
Ω
0.25W
15V, 1A
10
1
C102
470uF
400V
D205
EGP20D
Q201
KA431
LZ
C206
22nF
50V
R203
39kΩ
Ω
0.25W
R205
240kΩ
Ω D201
0.25W 1N4148
R204
4.7kΩ
Ω
0.25W
ZD201
5.1V
0.5W
R208
1kΩ
Ω
0.25W
Q202
KSC945
SW201
R207
5.1kΩ
Ω
0.25W
R206
10kΩ
Ω
0.25W
19
FSCQ1565RP
2. Transformer Schematic Diagram
EE R 4245
EER4942
Np1
1
18
2
17
3
16
4
15
N 24V
Np2
5
14
6
13
Na
N 15V
N8.5V
N140V
/2/2
N
125V
N 140V /2
/2
NN140V
125V /2
NP 2
N 140V /2
N8.5V
Na
7
12
8
11
9
10
NP 1
N24
N15V
3.Winding Specification
No
N24
Np1
Pin (s→f)
Wire
Turns
Winding Method
18 - 17
φ
7
Space Winding
0.08 × 20 × 2
18
Center Winding
0.08φ
× 20 × 2
20
Center Winding
0.08φ × 20 × 2
18
Center Winding
20
Center Winding
1-3
N140V/2
16 - 15
Np2
3-4
N140V/2
N8.5V
N15V
Na
15 - 14
0.65 × 2
φ
φ
0.08 × 20 × 2
12 - 13
0.6φ
×1
3
Space Winding
11 - 10
φ
0.4 × 2
5
Space Winding
7-6
φ
12
Space Winding
0.3 × 1
4.Electrical Characteristics
Inductance
Leakage Inductance
5. Core & Bobbin
Core : EER 4942
Bobbin : EER4942(18Pin)
Ae : 231 mm2
20
Pin
Specification
1-4
225uH ± 5%
1-4
10uH Max
Remarks
1kHz, 1V
2nd
all short
FSCQ1565RP
6.Demo Circuit Part List
Part
Value
Note
Fuse
FUSE
250V / 5A
Part
Value
Note
C210
470pF / 1kV
Ceramic Capacitor
C301
3.3nF / 1kV
AC Ceramic Capacitor
NTC
RT101
Inductor
5D-11
Resistor
BEAD101
BEAD
BEAD201
5uH
3A
R101
100kΩ
0.25 W
Diode
R102
150kΩ
0.25 W
D101
1N4937
1A, 600V
R103
5.1Ω
0.25 W
D102
1N4937
1A, 600V
R104
1.5kΩ
0.25 W
D103
1N4148
0.15A, 50V
R105
470Ω
0.25 W
D104
Short
R106
1kΩ
1W
D105
Open
R107
Open
ZD101
1N4746
R201
1kΩ
0.25 W
ZD102
Open
R202
1kΩ
0.25 W
ZD201
1N5231
5.1V, 0.5W
R203
39kΩ
0.25 W
D201
1N4148
0.15A, 50V
R204
4.7kΩ
0.25 W , 1%
D202
EGP30J
3A, 600V
R205
240kΩ
0.25 W , 1%
D203
EGP30D
3A, 200V
R206
10kΩ
0.25 W
D204
EGP20D
2A, 200V
R207
5.1kΩ
0.25 W
D205
EGP20D
2A, 200V
R208
1kΩ
0.25 W
VR201
30kΩ
C101
330n/275Vac
Box Capacitor
C102
470uF / 400V
Electrolytic
C103
10uF / 50V
Electrolytic
C104
10uF / 50V
Electrolytic
C105
2.7nF / 50V
Film Capacitor
C106
47nF / 50V
Film Capacitor
C107
1nF / 1kV
Film Capacitor
C108
Open
C201
220uF / 200V
C202
100uF / 200V
C203
2200uF / 35V
C204
1000uF / 35V
Electrolytic
C205
1000uF / 35V
Electrolytic
C206
22nF / 50V
Film Capacitor
C207
470pF / 1kV
Ceramic Capacitor
C208
470pF / 1kV
Ceramic Capacitor
C209
470pF / 1kV
Ceramic Capacitor
18V, 1W
Bridge Diode
Capacitor
BD101
GSIB660
6A, 600V
Line Filter
LF101
14mH
Transformer
T101
EER4942
SW201
ON/OFF
Switch
For MCU Signal
IC
IC101
FSCQ1565RP
OPT101
817A
Electrolytic
Q201
KA431LZ
Electrolytic
Q202
KSC945
Electrolytic
TO220F-5L
TO-92
21
FSCQ1565RP
7. Layout
Figure 14. Layout Considerations for FSCQ1565RP
Figure 15. Layout Considerations for FSCQ1565RP
22
FSCQ1565RP
Package Dimensions
Dimensions in Millimeters
TO-3PF-7L(Forming)
6.05
5.65
15.70
15.30
3.55
3.15
9.70
9.30
(1.65)
4.70
4.30
10.20
9.80
2.10
1.70
23.20
22.80
24.70
24.30
36.50
35.50
1.70
1.30
4.30
3.70
(1.00)
2.55
2.15
3.65
3.05
3.06
2.46
R0.90
MAX 1.00
12.00
11.00
R0.90
0.90
0.70
MAX 2.00
2.80
2.20
R0.90
5.30
4.70
2.54
0.80
0.50
3.48
2.88
1.50
4.50
NOTES: UNLESS OTHERWISE SPECIFIED
A) THIS PACKAGE DOES NOT COMPLY
TO ANY CURRENT PACKAGING STANDARD.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSIONS.
MKT-TO3PFC05revA
23
FSCQ1565RP
Ordering Information
Product Number
Package
Marking Code
BVdss
Rds(ON) Max.
FSCQ1565RPSYDTU
TO-3PF-7L(Forming)
CQ1565RP
650V
0.7 Ω
SYDTU : Forming Type
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER
DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
www.fairchildsemi.com
1/11/05 0.0m 001
 2005 Fairchild Semiconductor Corporation
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