WINNERJOIN BC848 Npn silicon transistor Datasheet

RoHS
BC846-BC848
NPN SILICON TRANSISTOR
Features
Power dissipation
。
P C M : 0.3 W (Tamb=25 C)
Pluse Drain
I CM : 0.1 mA
Reverse Voltage
V (BR)CBO : BC846 80V
BC847 50V
BC848 30V
Operating and storage junction temperature range
。
。
T j , T stg : -55 C to +150 C
3
1
2
0.95
IC
0.95
R
T
Characteristic
C
2.4
1.3
N
O
Symbol Test Condition
Collector-Base Breakdown Voltage
BC846
BC847
B C 848
V (BR)CBO I C =10 A, I E =0
BC846
C
E
L
Collector-Emitter Breakdown Voltage BC847 V (BR)CEO I C =10 mA, I B =0
B C 848
Emitter-Base Breakdown Voltage
Collector Cut-off Current
E
Collector Cut-off Current
BC846
BC847
B C 848
BC846
BC847
B C 848
V (BR)EBO I E =1 A, I C =0
V CB =70V, I E =0
I CBO
V CB =45V, I E =0
V CB =25V, I E =0
V CB =60V, I E =0
I CEO
V CB =40V, I E =0
V CB =25V, I E =0
1.BASE
2.EMITTER
3.COLLECTOR
0.4
1.
2.9
1.9
Electrical Characteristics
D
T
,. L
O
SOT-23
Unit:mm
。
(Ta=25 C)
Min. Typ. Max. Unit
80
50
30
65
45
30
V
5
V
V
0.1
A
0.1
A
0.1
A
I EBO
V EB =5V, I C =0
H FE(1)
V CE =5V, I C =2mA
V CE(sat)
I C =100mA, I B =5mA
0.5
V
Base-emitter saturatio voltage
V BE(sat)
I C =100mA, I B =5mA
1
V
Transition Frequency
fT
V CE =5V, I C =10mA ,f=100MHz
Emitter Cut-off Current
J
E
DC Current Gain (Note)
Collector-Emitter Saturation Voltage
W
WEJ ELECTRONIC CO.
BC846
BC847
B C 848
Http:// www.wej.cn
125
220
420
250
475
800
100
E-mail:[email protected]
MHz
RoHS
BC846-BC848
BC847 BC848
2.0
-1.0
1.0
0.7
0.5
0.3
0.2
-0.2
-0.5 -1.0 -2.0
-5.0 -10 -20
=10
-0.9
V,VOLTAGE(VOLTS)
Vc E =-10V
。
Ta=25 C
1.5
-0.7
-0.6
V BE(on) @V CE =-10V
-0.5
-0.4
-0.3
-0.2
V CE(sat) @I C /I B =10
-0.1
-50 -100 -200
I C -COLLECTOR CURRENT(mAdc)
-0.5 -1.0 -2.0 -5.0 -10 -20
“Saturation”and“On”Voltage
-2.0
。
-1.6
-1.2
-0.02
-0. 1
-1.0
-10 -20
R
T
I B,BASE CURRENT(mA)
Collector Saturation Region
BC846
C
E
L
Vc E =-5.0V
。
Ta=25 C
2.0
1.0
0.5
0.2
-0.1 -0.2
E
O
200
150
W
-1.6
-50mA
-100mA -200mA
-0.8
-0.4
。
T J =25 C
0
-0.02 -0.05 -0. 1 -0.2
-0.5 -1.0 -2.0
-5.0
I B,BASE CURRENT(mA)
-10 -20
Collector Saturation Region
WEJ ELECTRONIC CO.
60
40
30
20
-0.5
-1.0
-2.0 -3.0 -5.0
-10
-20 -30 -50
I C -COLLECTOR CURRENT(mAdc)
Current-Gain-Bandwidth Pouduct
。
T J =25 C
-0.8
V BE(sat) @ I C /I B =10
-0.6
V BE @V CE =-5.0V
-0.4
-0.2
V CE(sat) @I C /I B =10
-0.5 -1.0 -2.0
-5.0
-10 -20
-50 -100 -200
I C -COLLECTOR CURRENT(mA)
“On”Voltage
-2.0
-20mA
Vc E =-10V
。
Ta=25 C
80
0
-0.2
DC Current Gain
IC=
-10mA
C
100
IC-COLLECTOR CURRENT(AMP)
-1.2
IC
300
-1.0
-1.0 -2.0 -5.0 -10 -20 -50 -100 -200
J
E
400
N
I C =-100mA
I C =-20mA
-0.4
0
I C =-200mA
V,VOLTAGE(VOLTS)
I C =-50mA
fT ,CURRENT-GAIN-BANDWIDTH
PRODUCT(MHz)
T J =25 C
I C=
-10mA
-50 -100
I C -COLLECTOR CURRENT(mAdc)
Normailzed DC Current (mAdc)
-0.8
D
T
,. L
O
V BE(sat) @ I C /I B =10
-0.8
0
-0.1 -0.2
fT ,CURRENT-GAIN- BANDWIDTH PRODUCT
VC,COLLECTOR- EMITTER VOLTAGE(VOLTS)
hFE, DC CURRENT GAIN(NORMALIZED)
VC,COLLECTOR- EMITTER VOLTAGE(V)
hFE,NORMALIZED DC CURRENT GAIN
Typical Characteristics
500
Vc E =-5.0V
200
100
Http:// www.wej.cn
50
20
-1.0
-10
-100
I C -COLLECTOR CURRENT(mA)
Current-Gain-Bandwidth Pouduct
E-mail:[email protected]
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