ON MMBT2907ALT3G General purpose transistor Datasheet

MMBT2907ALT1G
General Purpose Transistors
PNP Silicon
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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Compliant
COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
−60
Vdc
Collector −Base Voltage
VCBO
−60
Vdc
Emitter −Base Voltage
VEBO
−5.0
Vdc
IC
−600
mAdc
ICM
−1200
mAdc
Collector Current − Continuous
Collector Current − Peak (Note 3)
1
BASE
2
EMITTER
3
SOT−23 (TO−236AB)
CASE 318
STYLE 6
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) @TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) @TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Symbol
Max
Unit
225
1.8
mW
mW/°C
556
°C/W
300
2.4
mW
mW/°C
RJA
417
°C/W
TJ, Tstg
−55 to +150
°C
PD
RJA
PD
1
2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Reference SOA curve.
MARKING DIAGRAM
2F M G
G
1
2F = Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Shipping†
Device
Package
MMBT2907ALT1G
SOT−23
(Pb−Free)
MMBT2907ALT3G
SOT−23 10,000 Tape & Reel
(Pb−Free)
3000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
January, 2011 − Rev. 11
1
Publication Order Number:
MMBT2907ALT1/D
MMBT2907ALT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Max
−60
−60
−
−
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 4)
(IC = −1.0 mAdc, IB = 0)
(IC = −10 mAdc, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage (IC = −10 Adc, IE = 0)
V(BR)CBO
−60
−
Vdc
Emitter −Base Breakdown Voltage (IE = −10 Adc, IC = 0)
V(BR)EBO
−5.0
−
Vdc
Collector Cutoff Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc)
ICEX
−
−50
nAdc
Collector Cutoff Current
(VCB = −50 Vdc, IE = 0)
(VCB = −50 Vdc, IE = 0, TA = 125°C)
ICBO
−
−
−0.010
−10
−
−50
75
100
100
100
50
−
−
−
300
−
−
−
−0.4
−1.6
−
−
−1.3
−2.6
fT
200
−
MHz
Output Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
−
8.0
pF
Input Capacitance (VEB = −2.0 Vdc, IC = 0, f = 1.0 MHz)
Cibo
−
30
ton
−
45
td
−
10
tr
−
40
toff
−
100
ts
−
80
tf
−
30
Base Cutoff Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc)
IBL
Vdc
Adc
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = −0.1 mAdc, VCE = −10 Vdc)
(IC = −1.0 mAdc, VCE = −10 Vdc)
(IC = −10 mAdc, VCE = −10 Vdc)
(IC = −150 mAdc, VCE = −10 Vdc)
(IC = −500 mAdc, VCE = −10 Vdc) (Note 4)
hFE
Collector −Emitter Saturation Voltage (Note 4)
(IC = −150 mAdc, IB = −15 mAdc) (Note 4)
(IC = −500 mAdc, IB = −50 mAdc)
VCE(sat)
Base −Emitter Saturation Voltage (Note 4)
(IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
VBE(sat)
−
Vdc
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (Notes 4, 5),
(IC = −50 mAdc, VCE = −20 Vdc, f = 100 MHz)
SWITCHING CHARACTERISTICS
Turn−On Time
(VCC = −30 Vdc, IC = −150 mAdc,
IB1 = −15 mAdc)
Delay Time
Rise Time
Turn−Off Time
(VCC = −6.0 Vdc, IC = −150 mAdc,
IB1 = IB2 = −15 mAdc)
Storage Time
Fall Time
ns
4. Pulse Test: Pulse Width v 300 s, Duty Cycle v 2.0%.
5. fT is defined as the frequency at which |hfe| extrapolates to unity.
INPUT
Zo = 50 PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
INPUT
Zo = 50 PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
-30 V
200
1.0 k
0
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
-6.0 V
1.0 k
1.0 k
0
50
-16 V
+15 V
-30 V
50
37
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
1N916
200 ns
200 ns
Figure 1. Delay and Rise Time Test Circuit
Figure 2. Storage and Fall Time Test Circuit
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2
MMBT2907ALT1G
TYPICAL CHARACTERISTICS
1000
VCE = 10 V
hFE, DC CURRENT GAIN
TJ = 150°C
25°C
100
-55°C
10
1.0
10
100
1000
IC, COLLECTOR CURRENT (mA)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 3. DC Current Gain
-1.0
-0.8
IC = -1.0 mA
-10 mA
-100 mA
-500 mA
-0.6
-0.4
-0.2
0
-0.005
-0.01
-0.02 -0.03 -0.05 -0.07 -0.1
-0.2
-0.3 -0.5 -0.7 -1.0
IB, BASE CURRENT (mA)
-2.0
-3.0
-20 -30
-5.0 -7.0 -10
-50
Figure 4. Collector Saturation Region
500
tr
100
70
50
300
VCC = -30 V
IC/IB = 10
TJ = 25°C
tf
30
20
td @ VBE(off) = 0 V
3.0
-5.0 -7.0 -10
30
10
7.0
5.0
-5.0 -7.0 -10
2.0 V
-20 -30
-50 -70 -100
IC, COLLECTOR CURRENT
100
70
50
t′s = ts - 1/8 tf
20
10
7.0
5.0
VCC = -30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
200
t, TIME (ns)
t, TIME (ns)
300
200
-200 -300 -500
Figure 5. Turn−On Time
-20 -30
-50 -70 -100
-200 -300 -500
IC, COLLECTOR CURRENT (mA)
Figure 6. Turn−Off Time
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3
MMBT2907ALT1G
TYPICAL SMALL−SIGNAL Characteristics
NOISE FIGURE
VCE = 10 Vdc, TA = 25°C
10
10
8.0
8.0
NF, NOISE FIGURE (dB)
IC = -1.0 mA, Rs = 430 -500 A, Rs = 560 -50 A, Rs = 2.7 k
-100 A, Rs = 1.6 k
6.0
4.0
Rs = OPTIMUM SOURCE RESISTANCE
2.0
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
50
0
C, CAPACITANCE (pF)
100
200
500 1.0 k 2.0 k
5.0 k 10 k
20 k
Rs, SOURCE RESISTANCE (OHMS)
Figure 7. Frequency Effects
Figure 8. Source Resistance Effects
Ceb
10
7.0
Ccb
5.0
3.0
-0.2 -0.3 -0.5
-1.0
-2.0 -3.0 -5.0
-10
-20 -30
50 k
400
300
200
100
80
VCE = -20 V
TJ = 25°C
60
40
30
20
-1.0 -2.0
-5.0
-10
-20
-50
-100 -200
-500 -1000
REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
Figure 9. Capacitances
Figure 10. Current−Gain − Bandwidth Product
1
1.1
IC/IB = 10
1.0
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
50
f, FREQUENCY (kHz)
20
150°C
25°C
−55°C
0.1
0.01
IC = -50 A
-100 A
-500 A
-1.0 mA
4.0
100
30
2.0
-0.1
6.0
2.0
f T, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
NF, NOISE FIGURE (dB)
f = 1.0 kHz
IC/IB = 10
0.9
−55°C
0.8
25°C
0.7
0.6
0.5
150°C
0.4
0.3
0.001
0.01
0.1
0.2
1
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 11. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 12. Base Emitter Saturation Voltage vs.
Collector Current
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4
1
MMBT2907ALT1G
TYPICAL SMALL−SIGNAL Characteristics
NOISE FIGURE
1.2
1.1
+0.5
VCE = 1 V
0
0.9
COEFFICIENT (mV/ ° C)
1.0
−55°C
0.8
25°C
0.7
0.6
0.5
150°C
0.4
RVC for VCE(sat)
-0.5
-1.0
-1.5
RVB for VBE
-2.0
0.3
0.2
0.001
0.01
0.1
-2.5
-0.1 -0.2 -0.5 -1.0 -2.0
1
-5.0 -10 -20
-50 -100 -200 -500
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (mA)
Figure 13. Base Emitter Voltage vs. Collector
Current
Figure 14. Temperature Coefficients
10
10 ms
100 ms
1
1s
Thermal Limit
IC (A)
VBE(on), BASE−EMITTER VOLTAGE (V)
VCE = 10 Vdc, TA = 25°C
1 ms
0.1
0.01
0.001
Single Pulse Test
@ TA = 25°C
0.01
0.1
1
10
VCE (Vdc)
Figure 15. Safe Operating Area
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5
100
MMBT2907ALT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
MILLIMETERS
INCHES
DIM
MIN
NOM
MAX
MIN
NOM
MAX
A
0.89
1.00
1.11
0.035
0.040
0.044
A1
0.01
0.06
0.10
0.001
0.002
0.004
b
0.37
0.44
0.50
0.015
0.018
0.020
c
0.09
0.13
0.18
0.003
0.005
0.007
D
2.80
2.90
3.04
0.110
0.114
0.120
E
1.20
1.30
1.40
0.047
0.051
0.055
e
1.78
1.90
2.04
0.070
0.075
0.081
L
0.10
0.20
0.30
0.004
0.008
0.012
0.35
0.54
0.69
0.014
0.021
0.029
L1
HE
2.10
2.40
2.64
0.083
0.094
0.104
q
0°
−−−
10 °
0°
−−−
10°
D
SEE VIEW C
3
HE
E
c
1
2
e
b
0.25
q
A
L
A1
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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MMBT2907ALT1/D
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