TI CD74HC368M High-speed cmos logic hex buffer/line driver,three-state non-inverting and inverting Datasheet

[ /Title
(CD74
HC367
,
CD74
HCT36
7,
CD74
HC368
,
CD74
HCT36
8)
/Subject
(High
Speed
CD54/74HC367, CD54/74HCT367,
CD54/74HC368, CD74HCT368
Data sheet acquired from Harris Semiconductor
SCHS181D
November 1997 - Revised October 2003
High-Speed CMOS Logic Hex Buffer/Line Driver,
Three-State Non-Inverting and Inverting
Features
Ordering Information
• Buffered Inputs
PART NUMBER
• High Current Bus Driver Outputs
TEMP. RANGE
(oC)
PACKAGE
CD54HC367F3A
-55 to 125
16 Ld CERDIP
• Two Independent Three-State Enable Controls
CD54HC368F3A
-55 to 125
16 Ld CERDIP
• Typical Propagation Delay tPLH, tPHL = 8ns at VCC = 5V,
CL = 15pF, TA = 25oC
CD54HCT367F3A
-55 to 125
16 Ld CERDIP
CD74HC367E
-55 to 125
16 Ld PDIP
• Fanout (Over Temperature Range)
- Standard Outputs . . . . . . . . . . . . . . . 10 LSTTL Loads
- Bus Driver Outputs . . . . . . . . . . . . . 15 LSTTL Loads
CD74HC367M
-55 to 125
16 Ld SOIC
CD74HC367MT
-55 to 125
16 Ld SOIC
CD74HC367M96
-55 to 125
16 Ld SOIC
• Wide Operating Temperature Range . . . -55oC to 125oC
CD74HC368E
-55 to 125
16 Ld PDIP
CD74HC368M
-55 to 125
16 Ld SOIC
CD74HC368MT
-55 to 125
16 Ld SOIC
• Significant Power Reduction Compared to LSTTL
Logic ICs
CD74HC368M96
-55 to 125
16 Ld SOIC
CD74HCT367E
-55 to 125
16 Ld PDIP
• HC Types
- 2V to 6V Operation
- High Noise Immunity: NIL = 30%, NIH = 30% of VCC
at VCC = 5V
CD74HCT367M
-55 to 125
16 Ld SOIC
CD74HCT367MT
-55 to 125
16 Ld SOIC
CD74HCT367M96
-55 to 125
16 Ld SOIC
CD74HCT368E
-55 to 125
16 Ld PDIP
• HCT Types
- 4.5V to 5.5V Operation
- Direct LSTTL Input Logic Compatibility,
VIL= 0.8V (Max), VIH = 2V (Min)
- CMOS Input Compatibility, Il ≤ 1µA at VOL, VOH
CD74HCT368M
-55 to 125
16 Ld SOIC
CD74HCT368MT
-55 to 125
16 Ld SOIC
CD74HCT368M96
-55 to 125
16 Ld SOIC
• Balanced Propagation Delay and Transition Times
NOTE: When ordering, use the entire part number. The suffix 96
denotes tape and reel. The suffix T denotes a small-quantity reel of
250.
Description
The ’HC367, ’HCT367, ’HC368, and CD74HCT368 silicon gate
CMOS three-state buffers are general purpose high-speed
non-inverting and inverting buffers. They have high drive current outputs which enable high speed operation even when
driving large bus capacitances. These circuits possess the low
power dissipation of CMOS circuitry, yet have speeds comparable to low power Schottky TTL circuits. Both circuits are capable
of driving up to 15 low power Schottky inputs.
The ’HC367 and ’HCT367 are non-inverting buffers, whereas
the ’HC368 and CD74HCT368 are inverting buffers. These
devices have two output enables, one enable (OE1) controls 4
gates and the other (OE2) controls the remaining 2 gates.
The ’HCT367 and CD74HCT368 logic families are speed, function and pin compatible with the standard LS logic family.
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright
© 2003, Texas Instruments Incorporated
1
CD54/74HC367, CD54/74HCT367, CD54/74HC368, CD74HCT368
Pinouts
CD54HC367, CD54HCT367
(CERDIP)
CD74HC367, CD74HCT367
(PDIP, SOIC)
TOP VIEW
CD54HC368
(CERDIP)
CD74HC368, CD74HCT368
(PDIP, SOIC)
TOP VIEW
OE1 1
16 VCC
OE1 1
16 VCC
1A 2
15 OE2
1A 2
15 OE2
1Y 3
14 6A
1Y 3
14 6A
2A 4
13 6Y
2A 4
13 6Y
2Y 5
12 5A
2Y 5
12 5A
3A 6
11 5Y
3A 6
11 5Y
3Y 7
10 4A
3Y 7
10 4A
GND 8
9 4Y
GND 8
9 4Y
Functional Diagrams
HC367, HCT367
OE1
1A
1Y
2A
2Y
HC368, CD74HCT368
1
16
2
15
3
14
4
13
5
12
6
11
3A
3Y
GND
VCC
OE1
OE2
1A
6A
1Y
6Y
2A
5A
2Y
5Y
3A
4A
3Y
4Y
GND
10
7
8
9
1
16
2
15
3
14
4
13
5
12
6
11
7
10
8
9
OUTPUTS
(Y)
OE
A
HC/HCT367
HC/HCT368
L
L
L
H
L
H
H
L
H
X
(Z)
(Z)
H = High Voltage Level
L = Low Voltage Level
X = Don’t Care
Z = High Impedance (OFF) State
2
OE2
6A
6Y
5A
5Y
4A
TRUTH TABLE
INPUTS
VCC
4Y
CD54/74HC367, CD54/74HCT367, CD54/74HC368, CD74HCT368
Logic Diagram
VCC
16
ONE OF SIX IDENTICAL CIRCUITS
2
1A
3
(NOTE 1)
1Y
GND
8
1
OE1
4
15
5
2A
2Y
OE2
6
7
3A
3Y
10
4A
9
4Y
12
5A
11
5Y
14
6A
13
6Y
NOTE:
1. Inverter not included in HC/HCT367
FIGURE 1. LOGIC DIAGRAM FOR THE HC/HCT367 AND HC/HCT368 (OUTPUTS FOR HC/HCT367 ARE COMPLEMENTS OF
THOSE SHOWN, i.e., 1Y, 2Y, ETC.)
3
CD54/74HC367, CD54/74HCT367, CD54/74HC368, CD74HCT368
Absolute Maximum Ratings
Thermal Information
DC Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 7V
DC Input Diode Current, IIK
For VI < -0.5V or VI > VCC + 0.5V . . . . . . . . . . . . . . . . . . . . . .±20mA
DC Output Diode Current, IOK
For VO < -0.5V or VO > VCC + 0.5V . . . . . . . . . . . . . . . . . . . .±20mA
DC Drain Current, per Output, IO
For -0.5V < VO < VCC + 0.5V. . . . . . . . . . . . . . . . . . . . . . . . . .±35mA
DC VCC or Ground Current, ICC . . . . . . . . . . . . . . . . . . . . . . . . .±50mA
Thermal Resistance (Typical, Note 2)
θJA (oC/W)
E (PDIP) Package . . . . . . . . . . . . . . . . . . . . . . . . . .
67
M (SOIC) Package. . . . . . . . . . . . . . . . . . . . . . . . . .
73
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . 150oC
Maximum Storage Temperature Range . . . . . . . . . .-65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300oC
(SOIC - Lead Tips Only)
Operating Conditions
Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC
Supply Voltage Range, VCC
HC Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2V to 6V
HCT Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 5.5V
DC Input or Output Voltage, VI, VO . . . . . . . . . . . . . . . . . 0V to VCC
Input Rise and Fall Time
2V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000ns (Max)
4.5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500ns (Max)
6V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400ns (Max)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
2. The package thermal impedance is calculated in accordance with JESD 51-7.
DC Electrical Specifications
TEST
CONDITIONS
SYMBOL
VI (V)
High Level Input
Voltage
VIH
-
Low Level Input
Voltage
VIL
High Level Output
Voltage
CMOS Loads
VOH
PARAMETER
25oC
IO (mA) VCC (V)
MIN
TYP
-40oC TO 85oC
MAX
MIN
MAX
-55oC TO 125oC
MIN
MAX
UNITS
HC TYPES
-
VIH or
VIL
High Level Output
Voltage
TTL Loads
Low Level Output
Voltage
CMOS Loads
VOL
VIH or
VIL
Low Level Output
Voltage
TTL Loads
-
-
2
1.5
-
-
1.5
-
1.5
-
V
4.5
3.15
-
-
3.15
-
3.15
-
V
6
4.2
-
-
4.2
-
4.2
-
V
2
-
-
0.5
-
0.5
-
0.5
V
4.5
-
-
1.35
-
1.35
-
1.35
V
6
-
-
1.8
-
1.8
-
1.8
V
-0.02
2
1.9
-
-
1.9
-
1.9
-
V
-0.02
4.5
4.4
-
-
4.4
-
4.4
-
V
-0.02
6
5.9
-
-
5.9
-
5.9
-
V
-6
4.5
3.98
-
-
3.84
-
3.7
-
V
-7.8
6
5.48
-
-
5.34
-
5.2
-
V
0.02
2
-
-
0.1
-
0.1
-
0.1
V
0.02
4.5
-
-
0.1
-
0.1
-
0.1
V
0.02
6
-
-
0.1
-
0.1
-
0.1
V
6
4.5
-
-
0.26
-
0.33
-
0.4
V
7.8
6
-
-
0.26
-
0.33
-
0.4
V
II
VCC or
GND
-
6
-
-
±0.1
-
±1
-
±1
µA
Quiescent Device
Current
ICC
VCC or
GND
0
6
-
-
8
-
80
-
160
µA
Three-State Leakage
Current
IOZ
VIL or
VIH
VO =
VCC or
GND
6
-
-
±0.5
-
±5.0
-
±10
µA
Input Leakage
Current
4
CD54/74HC367, CD54/74HCT367, CD54/74HC368, CD74HCT368
DC Electrical Specifications
(Continued)
TEST
CONDITIONS
SYMBOL
VI (V)
High Level Input
Voltage
VIH
-
-
Low Level Input
Voltage
VIL
-
High Level Output
Voltage
CMOS Loads
VOH
VIH or
VIL
PARAMETER
25oC
-40oC TO 85oC
-55oC TO 125oC
MIN
TYP
MAX
MIN
MAX
MIN
MAX
UNITS
4.5 to
5.5
2
-
-
2
-
2
-
V
-
4.5 to
5.5
-
-
0.8
-
0.8
-
0.8
V
-0.02
4.5
4.4
-
-
4.4
-
4.4
-
V
-4
4.5
3.98
-
-
3.84
-
3.7
-
V
0.02
4.5
-
-
0.1
-
0.1
-
0.1
V
4
4.5
-
-
0.26
-
0.33
-
0.4
V
IO (mA) VCC (V)
HCT TYPES
High Level Output
Voltage
TTL Loads
Low Level Output
Voltage
CMOS Loads
VOL
VIH or
VIL
Low Level Output
Voltage
TTL Loads
II
VCC to
GND
0
5.5
-
-
±0.1
-
±1
-
±1
µA
ICC
VCC or
GND
0
5.5
-
-
8
-
80
-
160
µA
Additional Quiescent
Device Current Per
Input Pin: 1 Unit Load
∆ICC
(Note 3)
VCC
-2.1
-
4.5 to
5.5
-
100
360
-
450
-
490
µA
Three-State Leakage
Current
IOZ
VIL or
VIH
VO =
VCC or
GND
5.5
-
-
±0.5
-
±5.0
-
±10
µA
Input Leakage
Current
Quiescent Device
Current
NOTE:
3. For dual-supply systems theoretical worst case (VI = 2.4V, VCC = 5.5V) specification is 1.8mA.
HCT Input Loading Table
INPUT
UNIT LOADS
OE1
0.6
All Others
0.55
NOTE: Unit Load is ∆ICC limit specified in DC Electrical
Specifications table, e.g., 360µA max at 25oC.
Switching Specifications
PARAMETER
Input tr, tf = 6ns
SYMBOL
TEST
CONDITIONS
tPLH, tPHL
CL = 50pF
25oC
-40oC TO 85oC
-55oC TO
125oC
VCC (V)
TYP
MAX
MAX
MAX
UNITS
2
-
105
130
160
ns
4.5
-
21
26
32
ns
6
-
18
24
27
ns
5
8
-
-
-
ns
HC TYPES
Propagation Delay,
Data to Outputs
HC/HCT367
CL = 15pF
5
CD54/74HC367, CD54/74HCT367, CD54/74HC368, CD74HCT368
Switching Specifications
PARAMETER
Propagation Delay,
Data to Outputs
HC/HCT368
Propagation Delay,
Output Enable and Disable
to Outputs
Output Transition Time
Input tr, tf = 6ns (Continued)
SYMBOL
TEST
CONDITIONS
tPLH, tPHL
CL = 50pF
tPLH, tPHL
tTLH, tTHL
25oC
-40oC TO 85oC
-55oC TO
125oC
VCC (V)
TYP
MAX
MAX
MAX
UNITS
2
-
105
130
160
ns
4.5
-
21
26
32
ns
6
-
18
24
27
ns
CL = 15pF
5
9
-
-
-
ns
CL = 50pF
2
-
150
190
225
ns
4.5
-
30
38
45
ns
6
-
26
33
38
ns
CL = 15pF
5
12
-
-
-
ns
CL = 50pF
2
-
60
75
90
ns
4.5
-
12
15
18
ns
6
-
10
13
15
ns
Input Capacitance
CI
-
-
-
10
10
10
pF
Three-State Output
Capacitance
CO
-
-
-
20
20
20
pF
Power Dissipation
Capacitance
(Notes 4, 5)
CPD
-
5
40
-
-
-
pF
CL = 50pF
4.5
-
25
31
38
ns
CL = 15pF
5
9
-
-
-
ns
CL = 50pF
4.5
-
30
38
45
ns
CL = 15pF
5
11
-
-
-
ns
CL = 50pF
4.5
-
35
44
53
ns
CL = 15pF
5
14
-
-
-
ns
CL = 50pF
4.5
-
12
15
18
ns
HCT TYPES
Propagation Delay,
Data to Outputs
HC/HCT367
tPLH, tPHL
Propagation Delay,
Data to Outputs
HC/HCT368
tPLH, tPHL
Propagation Delay,
Output Enable and Disable
to Outputs
tPLH, tPHL
Output Transition Time
tTLH, tTHL
Input Capacitance
CIN
-
-
-
10
10
10
pF
Three-State Capacitance
CO
-
-
-
20
20
20
pF
Power Dissipation
Capacitance
(Notes 4, 5)
CPD
-
5
42
-
-
-
pF
NOTES:
4. CPD is used to determine the dynamic power consumption, per buffer.
5. PD = VCC2fi (CPD + CL) where fi = Input Frequency, CL = Output Load Capacitance, VCC = Supply Voltage.
6
CD54/74HC367, CD54/74HCT367, CD54/74HC368, CD74HCT368
Test Circuits and Waveforms
tr = 6ns
tf = 6ns
90%
50%
10%
INPUT
GND
tTLH
tPHL
6ns
10%
2.7
1.3
OUTPUT LOW
TO OFF
90%
OUTPUT HIGH
TO OFF
50%
OUTPUTS
DISABLED
FIGURE 4. HC THREE-STATE PROPAGATION DELAY
WAVEFORM
OTHER
INPUTS
TIED HIGH
OR LOW
OUTPUT
DISABLE
IC WITH
THREESTATE
OUTPUT
GND
1.3V
tPZH
90%
OUTPUTS
ENABLED
OUTPUTS
ENABLED
0.3
10%
tPHZ
tPZH
3V
tPZL
tPLZ
50%
OUTPUTS
ENABLED
6ns
GND
10%
tPHZ
tf
OUTPUT
DISABLE
tPZL
tPLZ
OUTPUT HIGH
TO OFF
6ns
tr
VCC
90%
tPLH
FIGURE 3. HCT TRANSITION TIMES AND PROPAGATION
DELAY TIMES, COMBINATION LOGIC
6ns
OUTPUT LOW
TO OFF
1.3V
10%
INVERTING
OUTPUT
FIGURE 2. HC TRANSITION TIMES AND PROPAGATION
DELAY TIMES, COMBINATION LOGIC
50%
tTLH
90%
tPLH
tPHL
GND
tTHL
90%
50%
10%
INVERTING
OUTPUT
3V
2.7V
1.3V
0.3V
INPUT
tTHL
OUTPUT
DISABLE
tf = 6ns
tr = 6ns
VCC
1.3V
OUTPUTS
DISABLED
OUTPUTS
ENABLED
FIGURE 5. HCT THREE-STATE PROPAGATION DELAY
WAVEFORM
OUTPUT
RL = 1kΩ
CL
50pF
VCC FOR tPLZ AND tPZL
GND FOR tPHZ AND tPZH
NOTE: Open drain waveforms tPLZ and tPZL are the same as those for three-state shown on the left. The test circuit is Output RL = 1kΩ to
VCC, CL = 50pF.
FIGURE 6. HC AND HCT THREE-STATE PROPAGATION DELAY TEST CIRCUIT
7
PACKAGE OPTION ADDENDUM
www.ti.com
9-Oct-2007
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
5962-9070601MEA
ACTIVE
CDIP
J
16
9070601MEAS2035
OBSOLETE
CDIP
J
16
1
CD54HC367F3A
ACTIVE
CDIP
J
16
CD54HC368F
ACTIVE
CDIP
J
16
CD54HC368F3A
ACTIVE
CDIP
J
16
CD54HCT367F3A
ACTIVE
CDIP
J
16
1
CD74HC367E
ACTIVE
PDIP
N
16
25
CD74HC367EE4
ACTIVE
PDIP
N
16
25
CD74HC367M
ACTIVE
SOIC
D
16
40
CD74HC367M96
ACTIVE
SOIC
D
CD74HC367M96E4
ACTIVE
SOIC
CD74HC367M96G4
ACTIVE
CD74HC367ME4
Lead/Ball Finish
MSL Peak Temp (3)
TBD
A42 SNPB
TBD
Call TI
1
TBD
A42 SNPB
N / A for Pkg Type
1
TBD
A42 SNPB
N / A for Pkg Type
1
TBD
A42 SNPB
N / A for Pkg Type
TBD
A42 SNPB
N / A for Pkg Type
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
16
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
D
16
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
SOIC
D
16
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
ACTIVE
SOIC
D
16
40
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HC367MG4
ACTIVE
SOIC
D
16
40
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HC367MT
ACTIVE
SOIC
D
16
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HC367MTE4
ACTIVE
SOIC
D
16
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HC367MTG4
ACTIVE
SOIC
D
16
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HC368E
ACTIVE
PDIP
N
16
25
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
CD74HC368EE4
ACTIVE
PDIP
N
16
25
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
CD74HC368M
ACTIVE
SOIC
D
16
40
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HC368M96
ACTIVE
SOIC
D
16
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HC368M96E4
ACTIVE
SOIC
D
16
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HC368M96G4
ACTIVE
SOIC
D
16
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HC368ME4
ACTIVE
SOIC
D
16
40
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HC368MG4
ACTIVE
SOIC
D
16
40
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HC368MT
ACTIVE
SOIC
D
16
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HC368MTE4
ACTIVE
SOIC
D
16
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
Addendum-Page 1
N / A for Pkg Type
Call TI
PACKAGE OPTION ADDENDUM
www.ti.com
9-Oct-2007
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
CD74HC368MTG4
ACTIVE
SOIC
D
16
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HCT367E
ACTIVE
PDIP
N
16
25
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
CD74HCT367EE4
ACTIVE
PDIP
N
16
25
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
CD74HCT367M
ACTIVE
SOIC
D
16
40
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HCT367M96
ACTIVE
SOIC
D
16
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HCT367M96E4
ACTIVE
SOIC
D
16
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HCT367M96G4
ACTIVE
SOIC
D
16
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HCT367ME4
ACTIVE
SOIC
D
16
40
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HCT367MG4
ACTIVE
SOIC
D
16
40
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HCT367MT
ACTIVE
SOIC
D
16
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HCT367MTE4
ACTIVE
SOIC
D
16
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HCT367MTG4
ACTIVE
SOIC
D
16
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HCT368E
ACTIVE
PDIP
N
16
25
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
CD74HCT368EE4
ACTIVE
PDIP
N
16
25
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
CD74HCT368M
ACTIVE
SOIC
D
16
40
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HCT368M96
ACTIVE
SOIC
D
16
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HCT368M96E4
ACTIVE
SOIC
D
16
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HCT368M96G4
ACTIVE
SOIC
D
16
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HCT368ME4
ACTIVE
SOIC
D
16
40
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HCT368MG4
ACTIVE
SOIC
D
16
40
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HCT368MT
ACTIVE
SOIC
D
16
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HCT368MTE4
ACTIVE
SOIC
D
16
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
CD74HCT368MTG4
ACTIVE
SOIC
D
16
250
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
(1)
Lead/Ball Finish
MSL Peak Temp (3)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
Addendum-Page 2
PACKAGE OPTION ADDENDUM
www.ti.com
9-Oct-2007
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 3
PACKAGE MATERIALS INFORMATION
www.ti.com
4-Oct-2007
TAPE AND REEL BOX INFORMATION
Device
Package Pins
Site
Reel
Diameter
(mm)
Reel
Width
(mm)
A0 (mm)
B0 (mm)
K0 (mm)
P1
(mm)
W
Pin1
(mm) Quadrant
CD74HC367M96
D
16
SITE 27
330
16
6.5
10.3
2.1
8
16
Q1
CD74HC368M96
D
16
SITE 27
330
16
6.5
10.3
2.1
8
16
Q1
CD74HCT367M96
D
16
SITE 27
330
16
6.5
10.3
2.1
8
16
Q1
CD74HCT368M96
D
16
SITE 27
330
16
6.5
10.3
2.1
8
16
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
4-Oct-2007
Device
Package
Pins
Site
Length (mm)
Width (mm)
Height (mm)
CD74HC367M96
D
16
SITE 27
342.9
336.6
28.58
CD74HC368M96
D
16
SITE 27
342.9
336.6
28.58
CD74HCT367M96
D
16
SITE 27
342.9
336.6
28.58
CD74HCT368M96
D
16
SITE 27
342.9
336.6
28.58
Pack Materials-Page 2
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amplifier.ti.com
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www.ti.com/digitalcontrol
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www.ti.com/military
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