Silicon Schottky Diode BAT 14-098 Preliminary Data DBS mixer application to 12 GHz ● Low noise figure ● Medium barrier type ● ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (tape and reel) BAT 14-098 white A Pin Configuration Q62702-A0960 Package1) SOD-123 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 4 V Forward current IF 90 mA Power dissipation, TS ≤ 80 ˚C Ptot 100 mW Storage temperature range Tstg – 55 … + 150 ˚C Operating temperature range Top – 55 … + 150 Junction – ambient2) Rth JA ≤ 770 Junction – soldering point Rth JS ≤ 690 Thermal Resistance 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. Semiconductor Group 1 07.94 BAT 14-098 Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 4 – – – – 0.43 0.55 – – Breakdown voltage IR = 5 µA VBR Forward voltage IF = 1 mA IF = 10 mA VF Forward voltage matching IF = 10 mA ∆VF – – 10 mV Diode capacitance VR = 0, f= 1 MHz CT – – 0.35 pF Forward resistance IF = 10 mA / 50 mA RF – 5.5 – Ω Semiconductor Group 2 V BAT 14-098 Forward current IF = f (VF) Forward current IF = f (TS; TA*) *Package mounted on alumina Reverse current IR = f (VR) Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 3 BAT 14-098 S11-Parameters Typical impedance characteristics (with external bias I and Z0 = Ω) f I = 0.02 mA I = 0.05 mA I = 0.1 mA I = 0.2 mA I = 0.5 mA GHz MAG ANG MAG ANG MAG ANG MAG ANG MAG ANG 1 2 3 4 5 6 7 8 9 10 11 12 0.95 0.94 0.93 0.92 0.90 0.88 0.85 0.84 0.84 0.86 0.88 0.92 0.87 0.87 0.85 0.82 0.79 0.76 0.72 0.73 0.71 0.75 0.79 0.86 0.77 0.78 0.73 0.68 0.64 0.59 0.55 0.56 0.55 0.62 0.69 0.78 0.58 0.58 0.53 0.44 0.38 0.31 0.28 0.32 0.37 0.46 0.57 0.69 0.20 0.16 0.12 0.07 0.09 0.19 0.26 0.33 0.41 0.49 0.58 0.67 – 12.5 – 26.0 – 42.3 – 61.0 – 84.9 – 110.4 – 139.0 – 167.2 159.8 128.7 95.4 67.3 – 12.7 – 26.3 – 43.0 – 62.2 – 86.8 – 113.6 – 143.2 – 172.1 153.9 122.9 90.3 63.9 S11 = f (f, I) Semiconductor Group 4 – 12.8 – 26.5 – 43.2 – 63.2 – 88.8 – 117.2 – 148.5 – 179.3 145.4 114.7 83.7 59.4 – 12.5 – 25.7 – 42.4 – 62.1 – 91.6 – 125.3 – 165.1 157.8 121.1 93.6 69.0 49.7 – 3.4 – 5.0 – 0.1 27.5 79.8 85.0 80.1 71.5 61.3 49.5 38.5 28.6