Microsemi JANTX2N7228 N-channel mosfet qualified per mil-prf-19500/592 Datasheet

2N7224, 2N7225, 2N7227 and 2N7228
Qualified Levels:
JAN, JANTX, and
JANTXV
N-CHANNEL MOSFET
Compliant
Qualified per MIL-PRF-19500/592
DESCRIPTION
This family of switching transistors is military qualified up to the JANTXV level for highreliability applications. These devices are also available in a low profile U surface mount
package. Microsemi also offers numerous other transistor products to meet higher and lower
power ratings with various switching speed requirements in both through-hole and surfacemount packages.
TO-254AA Package
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
•
JEDEC registered 2N7224, 2N7225, 2N7227 and 2N7228 number series.
•
JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/592.
Also available in:
U (SMD-1 or
TO-267AB) package
(See part nomenclature for all available options.)
•
RoHS compliant by design.
(surface mount)
2N7224U & 2N7228U
APPLICATIONS / BENEFITS
•
•
Low-profile design.
Military and other high-reliability applications.
MAXIMUM RATINGS @ TA = +25ºC unless otherwise stated
Parameters / Test Conditions
Operating & Storage Junction Temperature Range
Thermal Resistance Junction-to-Case
Total Power Dissipation
@ TA = +25 °C
(1)
@ TC = +25 °C
Gate-Source Voltage, dc
(2)
Drain Current, dc @ TC = +25 ºC
2N7224
2N7225
2N7227
2N7228
(2)
Drain Current, dc @ TC = +100 ºC
2N7224
2N7225
2N7227
2N7228
(3)
Off-State Current (Peak Total Value)
2N7224
2N7225
2N7227
2N7228
Source Current
2N7224
2N7225
2N7227
2N7228
NOTES:
1.
2.
Symbol
Value
TJ & Tstg
RӨJC
-55 to +150
0.83
4
150
± 20
34.0
27.4
14.0
12.0
21
17
9
8
136
110
56
48
34.0
27.4
14.0
12.0
PT
VGS
ID1
ID2
IDM
IS
Unit
o
°C
C/W
W
V
A
A
A (pk)
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
A
Derated linearly by 1.2 W/ºC for TC > +25 ºC.
The following formula derives the maximum theoretical ID limit. ID is limited by package and internal
wires and may also be limited by pin diameter:
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
3.
IDM = 4 x ID1 as calculated in note 2.
T4-LDS-0102, Rev. 3 (121485)
©2012 Microsemi Corporation
Page 1 of 9
2N7224, 2N7225, 2N7227 and 2N7228
MECHANICAL and PACKAGING
•
•
•
•
•
CASE: Ceramic and gold over nickel plated steel.
TERMINALS: Gold over nickel plated tungsten/copper.
MARKING: Part number, date code, and polarity symbol.
WEIGHT: 6.5 grams.
See Package Dimensions on last page.
PART NOMENCLATURE
JAN
2N7224
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
Symbol
di/dt
IF
RG
VDD
VDS
VGS
JEDEC type number
(see Electrical Characteristics
table)
SYMBOLS & DEFINITIONS
Definition
Rate of change of diode current while in reverse-recovery mode, recorded as maximum value.
Forward current
Gate drive impedance
Drain supply voltage
Drain source voltage, dc
Gate source voltage, dc
T4-LDS-0102, Rev. 3 (121485)
©2012 Microsemi Corporation
Page 2 of 9
2N7224, 2N7225, 2N7227 and 2N7228
ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted
Parameters / Test Conditions
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
2N7224
2N7225
2N7227
2N7228
VGS = 0 V, ID = 1.0 mA
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = 0.25 mA
VDS ≥ VGS, ID = 0.25 mA, TJ = +125°C
VDS ≥ VGS, ID = 0.25 mA, TJ = -55°C
Gate Current
VGS = ± 20 V, VDS = 0 V
VGS = ± 20 V, VDS = 0 V, TJ = +125°C
Drain Current
VGS = 0 V, VDS = 80 V
VGS = 0 V, VDS = 160 V
VGS = 0 V, VDS = 320 V
VGS = 0 V, VDS = 400 V
Drain Current
VGS = 0 V, VDS = 80 V, TJ = +125 °C
VGS = 0 V, VDS = 160 V, TJ = +125 °C
VGS = 0 V, VDS = 320 V, TJ = +125 °C
VGS = 0 V, VDS = 400 V, TJ = +125 °C
V(BR)DSS
100
200
400
500
2.0
1.0
Max.
Unit
V
4.0
V
5.0
IGSS1
IGSS2
±100
±200
nA
2N7224
2N7225
2N7227
2N7228
IDSS1
25
µA
2N7224
2N7225
2N7227
2N7228
IDSS2
0.25
mA
rDS(on)1
0.070
0.100
0.315
0.415
Ω
rDS(on)2
0.081
0.105
0.415
0.515
Ω
rDS(on)3
0.11
0.17
0.68
0.90
VSD
1.8
1.9
1.7
1.7
2N7224
2N7225
2N7227
2N7228
Static Drain-Source On-State Resistance
VGS = 10 V, ID = 34.0 A pulsed
VGS = 10 V, ID = 27.4 A pulsed
VGS = 10 V, ID = 14.0 A pulsed
VGS = 10 V, ID = 12.0 A pulsed
2N7224
2N7225
2N7227
2N7228
T4-LDS-0102, Rev. 3 (121485)
Min.
VGS(th)1
VGS(th)2
VGS(th)3
Static Drain-Source On-State Resistance
VGS = 10 V, ID = 21.0 A pulsed
VGS = 10 V, ID = 17.0 A pulsed
VGS = 10 V, ID = 9.0 A pulsed
VGS = 10 V, ID = 8.0 A pulsed
Static Drain-Source On-State Resistance
TJ = +125°C
VGS = 10 V, ID = 21.0 A pulsed
VGS = 10 V, ID = 17.0 A pulsed
VGS = 10 V, ID = 9.0 A pulsed
VGS = 10 V, ID = 8.0 A pulsed
Diode Forward Voltage
VGS = 0 V, ID = 34.0 A pulsed
VGS = 0 V, ID = 27.4 A pulsed
VGS = 0 V, ID = 14.0 A pulsed
VGS = 0 V, ID = 12.0 A pulsed
Symbol
2N7224
2N7225
2N7227
2N7228
2N7224
2N7225
2N7227
2N7228
©2012 Microsemi Corporation
Ω
V
Page 3 of 9
2N7224, 2N7225, 2N7227 and 2N7228
ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted (continued)
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Gate Charge:
Symbol
On-State Gate Charge
VGS = 10 V, ID = 34.0 A, VDS = 50 V
VGS = 10 V, ID = 27.4 A, VDS = 50 V
VGS = 10 V, ID = 14.0 A, VDS = 50 V
VGS = 10 V, ID = 12.0 A, VDS = 50 V
2N7224
2N7225
2N7227
2N7228
Gate to Source Charge
VGS = 10 V, ID = 34.0 A, VDS = 50 V
VGS = 10 V, ID = 27.4 A, VDS = 50 V
VGS = 10 V, ID = 14.0 A, VDS = 50 V
VGS = 10 V, ID = 12.0 A, VDS = 50 V
2N7224
2N7225
2N7227
2N7228
Gate to Drain Charge
VGS = 10 V, ID = 34.0 A, VDS = 50 V
VGS = 10 V, ID = 27.4 A, VDS = 50 V
VGS = 10 V, ID = 14.0 A, VDS = 50 V
VGS = 10 V, ID = 12.0 A, VDS = 50 V
2N7224
2N7225
2N7227
2N7228
Min.
Max.
Unit
Qg(on)
125
115
110
120
nC
Qgs
22
22
18
19
nC
Qgd
65
60
65
70
nC
Max.
Unit
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-on delay time
ID = 34.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 50 V
ID = 27.4 A, VGS = 10 V, RG = 2.35 Ω, VDD = 100 V
ID = 14.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 200 V
ID = 12.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 250 V
Rinse time
ID = 34.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 50 V
ID = 27.4 A, VGS = 10 V, RG = 2.35 Ω, VDD = 100 V
ID = 14.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 200 V
ID = 12.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 250 V
Turn-off delay time
ID = 34.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 50 V
ID = 27.4 A, VGS = 10 V, RG = 2.35 Ω, VDD = 100 V
ID = 14.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 200 V
ID = 12.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 250 V
Fall time
ID = 34.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 50 V
ID = 27.4 A, VGS = 10 V, RG = 2.35 Ω, VDD = 100 V
ID = 14.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 200 V
ID = 12.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 250 V
Diode Reverse Recovery Time
di/dt ≤ 100 A/µs, VDD ≤ 30 V, IF = 34.0 A
di/dt ≤ 100 A/µs, VDD ≤ 30 V, IF = 27.4 A
di/dt ≤ 100 A/µs, VDD ≤ 30 V, IF = 14.0 A
di/dt ≤ 100 A/µs, VDD ≤ 30 V, IF = 12.0 A
T4-LDS-0102, Rev. 3 (121485)
Symbol
Min.
2N7224
2N7225
2N7227
2N7228
td(on)
35
ns
2N7224
2N7225
2N7227
2N7228
tr
190
ns
2N7224
2N7225
2N7227
2N7228
td(off)
170
ns
2N7224
2N7225
2N7227
2N7228
tf
130
ns
trr
500
950
1200
1600
ns
2N7224
2N7225
2N7227
2N7228
©2012 Microsemi Corporation
Page 4 of 9
2N7224, 2N7225, 2N7227 and 2N7228
Thermal Response (ZθJC)
GRAPHS
t1, Rectangle Pulse Duration (seconds)
FIGURE 1
Thermal Impedance Curves
T4-LDS-0102, Rev. 3 (121485)
©2012 Microsemi Corporation
Page 5 of 9
2N7224, 2N7225, 2N7227 and 2N7228
GRAPHS (continued)
ID DRAIN CURRENT (AMPERES)
ID DRAIN CURRENT (AMPERES)
FIGURE 2 – Maximum Drain Current vs Case Temperature Graphs
TC CASE TEMPERATURE (ºC)
For 2N7225
ID DRAIN CURRENT (AMPERES)
ID DRAIN CURRENT (AMPERES)
TC CASE TEMPERATURE (ºC)
For 2N7224
TC CASE TEMPERATURE (ºC)
For 2N7227
T4-LDS-0102, Rev. 3 (121485)
©2012 Microsemi Corporation
TC CASE TEMPERATURE (ºC)
For 2N7228
Page 6 of 9
2N7224, 2N7225, 2N7227 and 2N7228
GRAPHS (continued)
ID, DRAIN CURRENT (AMPERES)
FIGURE 3 – Maximum Safe Operating Area
ID, DRAIN CURRENT (AMPERES)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) for 2N7224
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) for 2N7225
T4-LDS-0102, Rev. 3 (121485)
©2012 Microsemi Corporation
Page 7 of 9
2N7224, 2N7225, 2N7227 and 2N7228
ID DRAIN CURRENT (AMPERES)
GRAPHS (continued)
ID DRAIN CURRENT (AMPERES)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) for 2N7227
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) for 2N7228
T4-LDS-0102, Rev. 3 (121485)
©2012 Microsemi Corporation
Page 8 of 9
2N7224, 2N7225, 2N7227 and 2N7228
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Glass meniscus included in dimension D and E.
4. All terminals are isolated from case.
5. In accordance with ASME Y14.5M, diameters are
equivalent to Φx symbology.
T4-LDS-0102, Rev. 3 (121485)
Ltr
BL
CH
LD
LL
LO
LS
MHD
MHO
TL
TT
TW
Term 1
Term 2
Term 3
©2012 Microsemi Corporation
Dimensions
Inch
Millimeters
Min
Max
Min
Max
.535
.545
13.59
13.84
.249
.260
6.32
6.60
.035
.045
0.89
1.14
.510
.570
12.95
14.48
.150 BSC
3.81 BSC
.150 BSC
3.81 BSC
.139
.149
3.53
3.78
.665
.685
16.89
17.40
.790
.800
20.07
20.32
.040
.050
1.02
1.27
.535
.545
13.59
13.84
Drain
Source
Gate
Notes
3, 4
3, 4
Page 9 of 9
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