BBY 51-07 Silicon Tuning Diode • High Q hyperabrupt dual tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment Type Marking Ordering Code Pin Configuration BBY 51-07 HHs 1 = C1 2 = C2 3 = A2 4 = A1 SOT-143 Q62702- Package Maximum Ratings per diode Parameter Symbol Values Unit Diode reverse voltage VR 7 V Forward current IF 20 mA Operating temperature range Top - 55 ... + 150 Storage temperature Tstg - 55 ... + 150 Semiconductor Group 1 °C Jan-08-1997 BBY 51-07 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. DC characteristics per diode Reverse current IR nA VR = 6 V, TA = 25 °C - - 10 VR = 6 V, TA = 65 °C - - 200 AC characteristics per diode Diode capacitance CT pF VR = 1 V, f = 1 MHz 4.8 5.3 6 VR = 2 V, f = 1 MHz 3.6 4.2 5 VR = 3 V, f = 1 MHz 2.9 3.5 4.2 VR = 4 V, f = 1 MHz 2.6 3.1 3.5 Capacitance ratio CT1/CT4 VR = 1 V, VR = 4 V, f = 1 MHz Capacitance difference 1.55 pF 1.4 1.78 2.2 0.3 0.5 0.7 Ω rs VR = 1 V, f = 1 GHz Case capacitance 2.15 C3V-C4V VR = 3 V, VR = 4 V, f = 1 MHz Series resistance 1.75 C1V-C3V VR = 1 V, VR = 3 V, f = 1 MHz Capacitance difference - - 0.37 - CC f = 1 MHz Series inductance chip to ground Ls Semiconductor Group 2 pF - 0.12 - - 2 - nH Jan-08-1997 BBY 51-07 Diode capacitance CT = f (VR) f = 1MHz Semiconductor Group Temperature coefficient of the diode capacitance TCc = f (VR) f = 1MHz 3 Jan-08-1997