IRF AUIRF7640S2TR1 Directfet power mosfet Datasheet

PD -97551
AUTOMOTIVE GRADE
• Advanced Process Technology
• Optimized for Class D Audio Amplifier and High Speed
•
•
•
•
•
•
•
•
•
Switching Applications
Low Rds(on) for Improved Efficiency
Low Qg for Better THD and Improved Efficiency
Low Qrr for Better THD and Lower EMI
Low Parasitic Inductance for Reduced Ringing and Lower EMI
Delivers up to 100W per Channel into an 8Ω Load
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Capability for Robustness and Reliability
Lead free, RoHS and Halogen free
SC
M2
DirectFET™ Power MOSFET ‚
V(BR)DSS
60V
RDS(on) typ.
27m
M4
:
36m:
3.5:
max.
RG (typical)
Qg (typical)
7.3nC
DirectFET™ ISOMETRIC
SB
Applicable DirectFET Outline and Substrate Outline 
SB
AUIRF7640S2TR
AUIRF7640S2TR1
L4
L6
L8
Description
The AUIRF7640S2TR/TR1 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
packaging platform to produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key Class D
audio amplifier performance factors such as efficiency, THD and EMI. Moreover the DirectFET packaging platform offers low parasitic
inductance and resistance when compared to conventional wire bonded SOIC packages which improves EMI performance by reducing the
voltage ringing that accompanies current transients.
These features combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier and other high speed
switching systems.
Absolute Maximum Ratings
Max.
Parameter
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V (Silicon Limited)f
Continuous Drain Current, VGS @ 10V (Silicon Limited)f
Continuous Drain Current, VGS @ 10V (Silicon Limited)e
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
PD @TC = 25°C
PD @TA = 25°C
EAS
EAS (tested)
IAR
EAR
Pulsed Drain Current
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
TP
TJ
TSTG
f
e
f
g
c
c
Units
60
± 20
21
15
5.8
77
84
30
2.4
38
57
d
V
A
W
mJ
See Fig.18a, 18b, 15, 16
270
-55 to + 175
A
mJ
°C
Thermal Resistance
e
j
k
Parameter
RθJA
Junction-to-Ambient
RθJA
Junction-to-Ambient
RθJA
Junction-to-Ambient
RθJ-Can
Junction-to-Can
RθJ-PCB
Junction-to-PCB Mounted
fl
Linear Derating Factor fl
Typ.
Max.
–––
63
12.5
–––
20
–––
–––
5.0
1.4
Units
°C/W
–––
0.2
W/°C
HEXFET® is a registered trademark of International Rectifier.
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1
8/16/10
AUIRF7640S2TR/TR1
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
VGS(th)
ΔVGS(th)/ΔTJ
gfs
RG
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
Gate Resistance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
Typ. Max. Units
60
–––
–––
3.0
–––
9.3
–––
0.1
27
4.0
-11
–––
3.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
Conditions
VGS = 0V, ID = 250μA
–––
V
–––
V/°C Reference to 25°C, ID = 1mA
36
mΩ VGS = 10V, ID = 13A
VDS = VGS, ID = 25μA
5.0
V
––– mV/°C
VDS = 50V, ID = 13A
–––
S
5.0
Ω
5
μA VDS = 60V, VGS = 0V
VDS = 48V, VGS = 0V, TJ = 125°C
250
V
100
nA
GS = 20V
VGS = -20V
-100
i
Dynamic Characteristics @ TJ = 25°C (unless otherwise stated)
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
7.3
1.5
0.9
3.0
1.9
3.9
5.3
4.0
12
6.3
6.2
450
160
48
610
120
11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
VDS = 30V
VGS = 10V
ID = 13A
See Fig. 6 and 17
ns
VDS = 16V, VGS = 0V
VDD = 30V, VGS = 10V
ID = 13A
RG=6.8Ω
pF
VGS = 0V
VDS = 25V
nC
i
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, f=1.0MHz
VGS = 0V, VDS = 48V, f=1.0MHz
Diode Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
IS
ISM
VSD
trr
Qrr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
g
ƒ Surface mounted on 1 in. square Cu
(still air).
Min.
Typ. Max. Units
–––
–––
21
–––
–––
84
–––
–––
–––
–––
26
24
1.3
39
36
‰ Mounted to a PCB with small
clip heatsink (still air)
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 13A, VGS = 0V
TJ = 25°C, IF = 13A, VDD = 25V
i
di/dt = 100A/μs
D
S
i
‰ Mounted on minimum footprint full size
board with metalized back and with small
clip heatsink (still air)
Notes  through Š are on page 3
2
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AUIRF7640S2TR/TR1
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
Moisture Sensitivity Level
Machine Model
DFET2
MSL1
Class B
AEC-Q101-002
ESD
Human Body Model
Class 2
AEC-Q101-001
Charged Device Model
Class IV
AEC-Q101-005
Yes
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site:
http://www.irf.com
†† Exceptions to AEC-Q101 requirements are noted in the qualification report.
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
„ TC measured with thermocouple mounted to top (Drain) of part.
† Starting TJ = 25°C, L = 0.944mH, RG = 25Ω, IAS = 8.9A.
‡ Pulse width ≤ 400μs; duty cycle ≤ 2%.
ˆ Used double sided cooling, mounting pad with large heatsink.
‰ Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Repetitive rating; pulse width limited by max. junction temperature. Š Rθ is measured at TJ of approximately 90°C.
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3
AUIRF7640S2TR/TR1
100
100
10
BOTTOM
1
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
0.1
0.01
5.0V
10
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
1
5.0V
≤60μs PULSE WIDTH
≤60μs PULSE WIDTH
Tj = 25°C
Tj = 175°C
0.001
0.1
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
100
ID = 13A
80
60
TJ = 125°C
20
TJ = 25°C
0
6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
Fig 3. Typical On-Resistance vs. Gate Voltage
100
Vgs = 10V
80
TJ = 125°C
60
TJ = 25°C
40
20
0
10
20
30
40
50
Fig 4. Typical On-Resistance vs. Drain Current
100
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current(A)
100
ID, Drain Current (A)
VGS, Gate -to -Source Voltage (V)
10
1
TJ = -40°C
TJ = 25°C
TJ = 175°C
0.1
VDS = 25V
≤60μs PULSE WIDTH
0.01
ID = 13A
VGS = 10V
2.0
1.5
1.0
0.5
2
4
6
8
10
12
VGS, Gate-to-Source Voltage (V)
Fig 5. Typical Transfer Characteristics
4
10
Fig 2. Typical Output Characteristics
( Ω)
RDS(on), Drain-to -Source On Resistance m
RDS(on), Drain-to -Source On Resistance (mΩ)
Fig 1. Typical Output Characteristics
40
1
VDS, Drain-to-Source Voltage (V)
14
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 6. Normalized On-Resistance vs. Temperature
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AUIRF7640S2TR/TR1
100
5.5
4.5
3.5
ID = 25μA
ID = 250μA
ID = 1.0mA
D = 1.0A
2.5
TJ = -40°C
TJ = 25°C
TJ = 175°C
ISD, Reverse Drain Current (A)
VGS(th), Gate threshold Voltage (V)
6.5
10
1
VGS = 0V
0.1
1.5
-75 -50 -25
0
0.2
25 50 75 100 125 150 175
Fig 7. Typical Threshold Voltage vs. Junction Temperature
10000
1.0
1.2
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
TJ = 25°C
14
Coss = Cds + Cgd
C, Capacitance (pF)
Gfs , Forward Transconductance (S)
0.8
Fig 8. Typical Source-Drain Diode Forward Voltage
18
12
TJ = 175°C
10
8
6
1000
Ciss
Coss
100
Crss
4
VDS = 5.0V
2
380μs PULSE WIDTH
10
0
0
4
8
12
16
20
1
24
10
100
VDS, Drain-to-Source Voltage (V)
ID,Drain-to-Source Current (A)
Fig 10. Typical Capacitance vs.Drain-to-Source Voltage
Fig 9. Typical Forward Transconductance Vs. Drain Current
24
14
ID= 13A
12
VDS= 80V
20
VDS= 50V
VDS= 20V
ID, Drain Current (A)
VGS, Gate-to-Source Voltage (V)
0.6
VSD , Source-to-Drain Voltage (V)
TJ , Temperature ( °C )
16
0.4
10
8
6
4
16
12
8
4
2
0
0
0
2
4
6
8
10
QG, Total Gate Charge (nC)
Fig.11 Typical Gate Charge vs.Gate-to-Source Voltage
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25
50
75
100
125
150
175
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
5
ID, Drain-to-Source Current (A)
1000
EAS , Single Pulse Avalanche Energy (mJ)
AUIRF7640S2TR/TR1
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
1msec
100μsec
10
1
DC
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
160
1
10
TOP
120
100
80
60
40
20
0.1
0
ID
2.5A
4.8A
BOTTOM 13A
140
0
100
25
VDS , Drain-toSource Voltage (V)
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy vs. Temperature
Thermal Response ( Z thJC ) °C/W
10
D = 0.50
1
0.20
0.10
0.05
0.02
0.01
0.1
τJ
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
R1
R1
τJ
τ1
R2
R2
R3
R3
Ri (°C/W)
R4
R4
τC
τ2
τ1
τ2
τ3
τ3
Ci= τi/Ri
Ci i/Ri
0.0001
τ4
τ4
τ
τi (sec)
0.49687
0.000119
0.00517
8.231486
2.55852
0.018926
1.94004
0.002741
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
Duty Cycle = Single Pulse
10
0.01
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 16. Typical Avalanche Current Vs.Pulsewidth
6
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AUIRF7640S2TR/TR1
EAR , Avalanche Energy (mJ)
40
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 13A
30
20
10
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
Notes on Repetitive Avalanche Curves , Figures 16, 17:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 18a, 18b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 16, 17).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 17. Maximum Avalanche Energy Vs. Temperature
V(BR)DSS
15V
tp
DRIVER
L
VDS
D.U.T
RG
VGS
20V
+
- VDD
IAS
tp
A
0.01Ω
I AS
Fig 18a. Unclamped Inductive Test Circuit
Fig 18b. Unclamped Inductive Waveforms
Id
Vds
L
VCC
DUT
0
20K
1K
Vgs
S
Vgs(th)
Fig 19a. Gate Charge Test Circuit
VDS
VGS
RG
Qgodr
RD
Qgd
Qgs2 Qgs1
Fig 19b. Gate Charge Waveform
D.U.T.
VDS
+
-
V DD
90%
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
10%
VGS
td(on)
Fig 20a. Switching Time Test Circuit
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tr
t d(off)
tf
Fig 20b. Switching Time Waveforms
7
AUIRF7640S2TR/TR1
DirectFET Auto™ Board Footprint, SB (Small Size Can).
Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
CL
G = GATE
D = DRAIN
S = SOURCE
D
D
G
D
8
S
D
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AUIRF7640S2TR/TR1
DirectFET Auto™ Outline Dimension, SB Outline (Small Size Can).
Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
DIMENSIONS
CODE
A
B
C
D
E
F
G
H
J
K
L
M
P
R
METRIC
MIN MAX
4.75 4.85
3.70 3.95
2.75 2.85
0.35 0.45
0.48 0.52
0.88 0.92
0.98 1.02
0.88 0.92
N/A
N/A
0.95 1.05
1.85 1.95
0.68 0.74
0.08 0.17
0.02 0.08
IMPERIAL
MIN
MAX
0.187
0.191
0.146
0.156
0.108
0.112
0.014
0.018
0.019
0.020
0.035
0.036
0.039
0.040
0.035
0.036
N/A
N/A
0.037
0.041
0.073
0.077
0.027
0.029
0.003
0.007
0.001
0.003
DirectFET™ Part Marking
"AU" = GATE AND
AUTOMOTIVE MARKING
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
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9
AUIRF7640S2TR/TR1
Automotive DirectFET™ Tape & Reel Dimension (Showing component orientation).
F
A
B
E
C
D
G
H
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as AUIRF7640S2TR). For 1000 parts on 7"
reel, order AUIRF7640S2TR1
REEL DIMENSIONS
STANDARD OPTION (QTY 4800)
TR1 OPTION (QTY 1000)
IMPERIAL
IMPERIAL
METRIC
METRIC
CODE
MIN
MIN
MAX
MIN
MIN
MAX
MAX
MAX
12.992
6.9
A
N.C
177.77 N.C
330.0
N.C
N.C
0.795
0.75
B
N.C
19.06
20.2
N.C
N.C
N.C
C
0.504
0.53
0.50
13.5
12.8
0.520
13.2
12.8
D
0.059
0.059
N.C
1.5
1.5
N.C
N.C
N.C
E
3.937
2.31
N.C
58.72
100.0
N.C
N.C
N.C
F
N.C
N.C
0.53
N.C
N.C
0.724
18.4
13.50
G
0.488
0.47
11.9
N.C
12.4
0.567
14.4
12.01
H
0.469
0.47
11.9
N.C
11.9
0.606
15.4
12.01
LOADED TAPE FEED DIRECTION
A
H
F
C
D
B
E
NOTE: CONTROLLING
DIMENSIONS IN MM
10
CODE
A
B
C
D
E
F
G
H
G
DIMENSIONS
IMPERIAL
METRIC
MIN
MIN
MAX
MAX
0.311
0.319
8.10
7.90
0.154
4.10
3.90
0.161
0.469
0.484
12.30
11.90
0.215
5.55
5.45
0.219
0.158
4.00
0.165
4.20
0.205
0.197
5.20
5.00
0.059
1.50
N.C
N.C
0.059
1.50
0.063
1.60
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AUIRF7640S2TR/TR1
IMPORTANT NOTICE
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right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time
and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry
and / or customer specific requirements with regards to product discontinuance and process change notification. All products are
sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard
warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except
where mandated by government requirements, testing of all parameters of each product is not necessarily performed.
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voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business
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or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
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IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are
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acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any
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www.irf.com
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