IRF IR2304PbF Half-bridge driver Datasheet

Data Sheet No. PD60200 revB
IR2304(S) & (PbF)
HALF-BRIDGE DRIVER
Features
Product Summary
• Floating channel designed for bootstrap operation
•
•
•
•
•
•
•
•
•
to +600V. Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Under voltage lockout for both channels
3.3V, 5V, and 15V input logic input compatible
Cross-conduction prevention logic
Matched propagation delay for both channels
Lower di/dt gate driver for better noise immunity
Internal 100ns dead-time
Output in phase with input
Available in Lead-Free
VOFFSET
IO+/- (min)
VOUT
Delay Matching
Internal deadtime
ton/off (typ.)
600V max.
60 mA/130 mA
10 - 20V
50 ns
100 ns
220/220 ns
Package
Description
The IR2304(S) are a high voltage, high speed
power MOSFET and IGBT driver with independent high and low side referenced output
channels. Proprietary HVIC and latch immune
CMOS technologies
enable ruggedized monolithic construction.
The logic input is compatible with standard
CMOS or LSTTL output, down to 3.3V logic.
The output driver features a high pulse current buffer stage designed for minimum driver
cross-conduction. The floating channel can be
used to drive an N-channel power MOSFET
or IGBT in the high side configuration which
operates up to 600 volts.
8 Lead SOIC
8-Lead PDIP
2106/2301/2108/2109/2302/2304 Feature Comparison
Part
2106/2301
21064
2108
21084
2109/2302
21094
2304
Block Diagram
Input
logic
Crossconduction
prevention
logic
Dead-Time
HIN/LIN
no
none
HIN/LIN
yes
Programmable 0.54~5µs
IN/SD
yes
Programmable 0.54~5 µs
COM
VSS/COM
COM
VSS/COM
COM
VSS/COM
HIN/LIN
yes
Internal 100ns
COM
Internal 540ns
Internal 540ns
Ground Pins
up to 600V
Vcc
HIN
LIN
VB
LIN
HIN
VCC
HO
COM
VS
LO
TO
LOAD
IR2304
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1
IR2304(S)&(PbF)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions.
Symbol
Definition
VS
High side offset voltage
VB
High side floating supply voltage
Min.
Max.
VB - 25
VB + 0.3
-0.3
625
VS - 0.3
VB + 0.3
Units
VHO
High side floating output voltage HO
VCC
Low side and logic fixed supply voltage
-0.3
25
VLO
Low side output voltage LO
-0.3
VCC + 0.3
VIN
Com
dVS/dt
PD
RthJA
Logic input voltage (HIN, LIN)
Logic ground
Allowable offset voltage SLEW RATE
Package power dissipation @ TA ≤ +25°C
Thermal resistance, junction to ambient
V
-0.3
VCC + 0.3
VCC -25
VCC + 0.3
—
50
8-Lead SOIC
—
0.625
8-Lead PDIP
—
1.0
8-Lead SOIC
—
200
8-Lead PDIP
—
125
TJ
Junction temperature
—
150
TS
Storage temperature
-50
150
TL
Lead temperature (soldering, 10 seconds)
—
300
V/ns
W
°C/W
°C
Recommended Operating Conditions
The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. The VS offset rating is tested with all supplies biased at 15V differential.
Symbol
Min.
Max.
VB
High side floating supply voltage
Definition
VS + 10
VS + 20
VS
High side floating supply offset voltage
Note 1
600
VHO
High side (HO) output voltage
VS
VB
VLO
Low side (LO) output voltage
COM
VCC
VIN
Logic input voltage (HIN, LIN)
COM
VCC
VCC
Low side supply voltage
10
20
-40
125
TA
Ambient temperature
Units
V
°C
Note 1: Logic operational for VS of COM -5 to COM +600V. Logic state held for VS of COM -5V to COM -V BS.
2
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IR2304(S)&(PbF)
Static Electrical Characteristics
VBIAS (VCC, VBS) = 15V and TA = 25°C unless otherwise specified. The VIN, VTH and IIN parameters are referenced to
COM. The VO and IO parameters are referenced to COM and VS is applicable to HO and LO.
Symbol
Definition
Min. Typ. Max. Units Test Conditions
VCCUV+
VBSUV+
VCC and VBS supply undervoltage positive going
threshold
8
8.9
9.8
VCCUVVBSUV-
VCC and VBS supply undervoltage negative going
threshold
7.4
8.2
9
VCCUVH
VBSUVH
VCC supply undervoltage lockout hysteresis
0.3
0.7
—
ILK
Offset supply leakage current
—
—
50
IQBS
Quiescent VBS supply current
20
60
150
IQCC
Quiescent VCC supply current
50
120
240
VIH
Logic “1” input voltage
2.3
—
—
VIL
Logic “0” input voltage
—
—
0.8
VOH
High level output voltage, VBIAS - VO
—
—
2.8
VOL
Low level output voltage, VO
—
—
1.2
IIN+
Logic “1” input bias current
—
5
40
IIN-
Logic “0” input bias current
—
1.0
2.0
IO+
Output high short circuit pulse current
60
—
—
IO-
Output low short circuit pulsed current
130
—
—
V
VB = VS = 600V
µA
VIN = 0V or 5V
VIN = 0V or 5V
V
IO = 20mA
µA
mA
VIN = 5V
VIN = 0V
VO = 0V
PW ≤ 10 µs
Dynamic Electrical Characteristics
VBIAS (VCC, VBS) = 15V, VS = COM, CL = 1000 pF and TA = 25°C unless otherwise specified.
Symbol
Definition
Min. Typ. Max. Units Test Conditions
ton
Turn-on propagation delay
120
toff
Turn-off propagation delay
130
Turn-on rise time
60
Turn-off fall time
20
100
170
DT
Dead time
80
100
190
MT
Delay matching, HS & LS turn-on/off
—
—
50
tr
tf
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220
320
VS = 0V
220
330
VS = 0V or 600V
200
300
ns
3
IR2304(S)&(PbF)
Functional Block Diagram
VB
2304
UV
DETECT
HO
R
HV
LEVEL
SHIFTER
HIN
R
PULSE
FILTER
S
VS
PULSE
GENERATOR
SHOOTTHROUGH
PREVENTION
VCC
UV
DETECT
DELAY
LIN
Q
LO
COM
Lead Definitions
Symbol
Description
VCC
Low side supply voltage
COM
Logic ground and low side driver return
HIN
Logic input for high side gate driver output
LIN
Logic input for low side gate driver output
VB
High side floating supply
HO
High side driver output
VS
High voltage floating supply return
LO
Low side driver output
4
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IR2304(S)&(PbF)
Lead Assignments
1
LIN
VB
8
1
LIN
VB
8
2
HIN
HO
7
2
HIN
HO
7
3
VCC
VS
6
3
VCC
VS
6
4
COM
LO
5
4
COM
LO
5
8-Lead PDIP
8-Lead SOIC
HIN
LIN
HO
Internal Deadtime
LO
Figure 1. Input/Output Functionality Diagram
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5
IR2304(S)&(PbF)
50%
50%
HIN LIN
t on
t off
tr
90%
90%
HO
LO
tf
10%
10%
Figure 2. Switching Time Waveforms
HIN
LIN
50%
50%
90%
10%
LO
HO
DT
DT
90%
10%
Figure 3. Internal Deadtime Timing
6
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IR2304(S)&(PbF)
Case outlines
01-6014
01-3003 01 (MS-001AB)
8-Lead PDIP
D
DIM
B
5
A
F OOT PRINT
8
7
6
5
6
H
E
0.25 [.010]
1
2
3
A
4
6.46 [.255]
MIN
.0532
.0688
1.35
1.75
A1 .0040
e
3X 1.27 [.050]
8X 1.78 [.070]
e1
MAX
0.25
.0098
0.10
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BAS IC
1.27 BAS IC
.025 BAS IC
0.635 BAS IC
e1
6X
MILLIMETERS
MAX
A
8X 0.72 [.028]
INCHES
MIN
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
A
C
y
0.10 [.004]
8X b
0.25 [.010]
A1
8X L
8X c
7
C A B
4. OUTLINE CONFORMS T O JEDEC OUT LINE MS-012AA.
NOT ES:
1. DIMENS IONING & TOLE RANCING PE R ASME Y14.5M-1994.
2. CONTROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE S HOWN IN MILLIME TE RS [INCHE S].
4. OUT LINE CONFORMS T O JEDE C OUTLINE MS-012AA.
8 Lead SOIC
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5 DIMENSION DOES NOT INCLUDE MOLD PROT RUS IONS.
MOLD PROTRUSIONS NOT T O EXCE ED 0.15 [.006].
6 DIMENSION DOES NOT INCLUDE MOLD PROT RUS IONS.
MOLD PROTRUSIONS NOT T O EXCE ED 0.25 [.010].
7 DIMENSION IS T HE LENGT H OF LE AD F OR SOLDE RING T O
A SUBSTRAT E.
01-6027
01-0021 11 (MS-012AA)
7
IR2304(S)&(PbF)
ORDER INFORMATION
Basic Part (Non-Lead Free)
Lead-Free Part
8-Lead PDIP IR2304
8-Lead SOIC IR2304S
8-Lead PDIP IR2304
8-Lead SOIC IR2304S
order IR2304
order IR2304S
order IR2304PbF
order IR2304SPbF
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web Site.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
09/10/04
8
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