Vishay BZX84B4V3 Small signal zener diode Datasheet

BZX84-Series
www.vishay.com
Vishay Semiconductors
Small Signal Zener Diodes
FEATURES
• Silicon planar Zener diodes
3
• The Zener voltages are graded according to the
international E24 standard. Standard Zener
voltage tolerance is ± 5 %, indicated by the “C”
in the ordering code. Replace “C” with “B” for
± 2 % tolerance.
2
1
20421
• AEC-Q101 qualified
• ESD capability acc. to AEC-Q101:
human body model: > 8 kV,
machine model: > 800 V
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
• Base P/N-E3 - RoHS-compliant, commercial grade
UNIT
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
VZ range nom.
2.4 to 75
V
Test current IZT
2; 5
mA
VZ specification
Pulse current
Int. construction
Single
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
TAPED UNITS PER REEL
MINIMUM ORDER QUANTITY
3000 (8 mm tape on 7" reel)
15 000
10 000 (8 mm tape on 13" reel)
10 000
BZX84C2V4-E3-08 to BZX84C75-E3-08
BZX84B2V4-E3-08 to BZX84B75-E3-08
BZX84C2V4-HE3-08 to BZX84C75-HE3-08
BZX84-series
BZX84B2V4-HE3-08 to BZX84B75-HE3-08
BZX84C2V4-E3-18 to BZX84C75-E3-18
BZX84B2V4-E3-18 to BZX84B75-E3-18
BZX84C2V4-HE3-18 to BZX84C75-HE3-18
BZX84B2V4-HE3-18 to BZX84B75-HE3-18
PACKAGE
PACKAGE NAME
SOT-23
WEIGHT
MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE SENSITIVITY
LEVEL
SOLDERING CONDITIONS
8.8 mg
UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Power dissipation
Tamb = 25 °C, device on fiberglass substrate,
acc. layout on page 7
Ptot
300
mW
Thermal resistance junction to ambient air
Tamb = 25 °C, device on fiberglass substrate,
acc. layout on page 7
RthJA
420
K/W
Tj
150
°C
Storage temperature range
Tstg
- 65 to + 150
°C
Operating temperature range
Top
- 55 to + 150
°C
Junction temperature
Rev. 2.0, 28-Feb-13
Document Number: 85763
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZX84-Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE
PART
NUMBER
MARKING
CODE
VZ at IZT1
TEST CURRENT
IZT1
V
REVERSE
LEAKAGE
CURRENT
DYNAMIC
RESISTANCE
f = 1 kHz
TEMPERATURE
COEFFICIENT
IR at VR
ZZ at IZT1 ZZK at IZT2
VZ at IZT1

10-4/°C
IZT2
mA
μA
V
MIN.
NOM.
MAX.
MAX.
MAX.
MIN.
MAX.
BZX84C2V4
Z11
2.2
2.4
2.6
5
1
50
1
100
275
-9
-4
BZX84C2V7
Z12
2.5
2.7
2.9
5
1
20
1
100
600
-9
-4
BZX84C3V0
Z13
2.8
3.0
3.2
5
1
10
1
95
600
-9
-3
BZX84C3V3
Z14
3.1
3.3
3.5
5
1
5
1
95
600
-8
-3
BZX84C3V6
Z15
3.4
3.6
3.8
5
1
5
1
90
600
-8
-3
BZX84C3V9
Z16
3.7
3.9
4.1
5
1
3
1
90
600
-7
-3
BZX84C4V3
Z17
4.0
4.3
4.6
5
1
3
1
90
600
-6
-1
BZX84C4V7
Z1
4.4
4.7
5.0
5
1
3
2
80
500
-5
2
BZX84C5V1
Z2
4.8
5.1
5.4
5
1
2
2
60
480
-3
4
BZX84C5V6
Z3
5.2
5.6
6.0
5
1
1
2
40
400
-2
6
BZX84C6V2
Z4
5.8
6.2
6.6
5
1
3
4
10
150
-1
7
BZX84C6V8
Z5
6.4
6.8
7.2
5
1
2
4
15
80
2
7
BZX84C7V5
Z6
7.0
7.5
7.9
5
1
1
5
15
80
3
7
BZX84C8V2
Z7
7.7
8.2
8.7
5
1
0.7
5
15
80
4
7
BZX84C9V1
Z8
8.5
9.1
9.6
5
1
0.5
6
15
100
5
8
BZX84C10
Z9
9.4
10
10.6
5
1
0.2
7
20
150
5
8
BZX84C11
Y1
10.4
11
11.6
5
1
0.1
8
20
150
5
9
BZX84C12
Y2
11.4
12
12.7
5
1
0.1
8
25
150
6
9
BZX84C13
Y3
12.4
13
14.1
5
1
0.1
8
30
170
7
9
BZX84C15
Y4
13.8
15
15.6
5
1
0.05
10.5
30
200
7
9
BZX84C16
Y5
15.3
16
17.1
5
1
0.05
11.2
40
200
8
9.5
BZX84C18
Y6
16.8
18
19.1
5
1
0.05
12.6
45
225
8
9.5
BZX84C20
Y7
18.8
20
21.2
5
1
0.05
14.0
55
225
8
10
BZX84C22
Y8
20.8
22
23.3
5
1
0.05
15.4
55
250
8
10
BZX84C24
Y9
22.8
24
25.6
5
1
0.05
16.8
70
250
8
10
BZX84C27
Y10
25.1
27
28.9
2
0.5
0.05
18.9
80
300
8
10
BZX84C30
Y11
28
30
32
2
0.5
0.05
21.0
80
300
8
10
BZX84C33
Y12
31
33
35
2
0.5
0.05
23.1
80
325
8
10
BZX84C36
Y13
34
36
38
2
0.5
0.05
25.2
90
350
8
10
BZX84C39
Y14
37
39
41
2
0.5
0.05
27.3
130
350
10
12
BZX84C43
Y15
40
43
46
2
0.5
0.05
30.1
150
375
10
12
BZX84C47
Y16
44
47
50
2
0.5
0.05
32.9
170
375
10
12
BZX84C51
Y17
48
51
54
2
0.5
0.05
35.7
180
400
10
12
BZX84C56
Y18
52
56
60
2
0.5
0.05
39.2
200
425
9
11
BZX84C62
Y19
58
62
66
2
0.5
0.05
43.4
215
450
9
12
BZX84C68
Y20
64
68
72
2
0.5
0.05
47.6
240
475
10
12
BZX84C75
Y21
70
75
79
2
0.5
0.05
52.5
255
500
10
12
Rev. 2.0, 28-Feb-13
Document Number: 85763
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZX84-Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE
PART
NUMBER
MARKING
CODE
VZ at IZT1
TEST CURRENT
IZT1
V
REVERSE
LEAKAGE
CURRENT
DYNAMIC
RESISTANCE
f = 1 kHz
TEMPERATURE
COEFFICIENT
IR at VR
ZZ at IZT1 ZZK at IZT2
VZ at IZT1

10-4/°C
IZT2
mA
μA
V
MIN.
NOM.
MAX.
MAX.
MAX.
MIN.
MAX.
BZX84B2V4
Z50
2.35
2.4
2.45
5
1
50
1
100
275
-9
-4
BZX84B2V7
Z51
2.65
2.7
2.75
5
1
20
1
100
600
-9
-4
BZX84B3V0
Z52
2.94
3.0
3.06
5
1
10
1
95
600
-9
-3
BZX84B3V3
Z53
3.23
3.3
3.37
5
1
5
1
95
600
-8
-3
BZX84B3V6
Z54
3.53
3.6
3.67
5
1
5
1
90
600
-8
-3
BZX84B3V9
Z55
3.82
3.9
3.98
5
1
3
1
90
600
-7
-3
BZX84B4V3
Z56
4.21
4.3
4.39
5
1
3
1
90
600
-6
-1
BZX84B4V7
Z57
4.61
4.7
4.79
5
1
3
2
80
500
-5
2
BZX84B5V1
Z58
5.0
5.1
5.2
5
1
2
2
60
480
-3
4
BZX84B5V6
Z59
5.49
5.6
5.71
5
1
1
2
40
400
-2
6
BZX84B6V2
Z60
6.08
6.2
6.32
5
1
3
4
10
150
-1
7
BZX84B6V8
Z61
6.66
6.8
6.94
5
1
2
4
15
80
2
7
BZX84B7V5
Z62
7.35
7.5
7.65
5
1
1
5
15
80
3
7
BZX84B8V2
Z63
8.04
8.2
8.36
5
1
0.7
5
15
80
4
7
BZX84B9V1
Z64
8.92
9.1
9.28
5
1
0.5
6
15
100
5
8
BZX84B10
Z65
9.8
10
10.2
5
1
0.2
7
20
150
5
8
BZX84B11
Z66
10.8
11
11.2
5
1
0.1
8
20
150
5
9
BZX84B12
Z67
11.8
12
12.2
5
1
0.1
8
25
150
6
9
BZX84B13
Z68
12.7
13
13.3
5
1
0.1
8
30
170
7
9
BZX84B15
Z69
14.7
15
15.3
5
1
0.05
10.5
30
200
7
9
BZX84B16
Z70
15.7
16
16.3
5
1
0.05
11.2
40
200
8
9.5
BZX84B18
Z71
17.6
18
18.4
5
1
0.05
12.6
45
225
8
9.5
BZX84B20
Z72
19.6
20
20.4
5
1
0.05
14
55
225
8
10
BZX84B22
Z73
21.6
22
22.4
5
1
0.05
15.4
55
250
8
10
BZX84B24
Z74
23.5
24
24.5
5
1
0.05
16.8
70
250
8
10
BZX84B27
Z75
26.5
27
27.5
2
0.5
0.05
18.9
80
300
8
10
BZX84B30
Z76
29.4
30
30.6
2
0.5
0.05
21
80
300
8
10
BZX84B33
Z77
32.3
33
33.7
2
0.5
0.05
23.1
80
325
8
10
BZX84B36
Z78
35.3
36
36.7
2
0.5
0.05
25.2
90
350
8
10
BZX84B39
Z79
38.2
39
39.8
2
0.5
0.05
27.3
130
350
10
12
BZX84B43
Z80
42.1
43
43.9
2
0.5
0.05
30.1
150
375
10
12
BZX84B47
Z81
46.1
47
47.9
2
0.5
0.05
32.9
170
375
10
12
BZX84B51
Z82
50
51
52
2
0.5
0.05
35.7
180
400
10
12
BZX84B56
Z83
54.9
56
57.1
2
0.5
0.05
39.2
200
425
9
11
BZX84B62
Z84
60.8
62
63.2
2
0.5
0.05
43.4
215
450
9
12
BZX84B68
Z85
66.6
68
69.4
2
0.5
0.05
47.6
240
475
10
12
BZX84B75
Z86
73.5
75
76.5
2
0.5
0.05
52.5
255
500
10
12
Rev. 2.0, 28-Feb-13
Document Number: 85763
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZX84-Series
www.vishay.com
Vishay Semiconductors
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
mA
103
Ω
100
TJ = 25 °C
102
IF
5
4
10
3
rzj
TJ = 100 °C
1
10-1
33
2
27
22
10
TJ = 25 °C
10-2
18
15
5
4
10-3
12
3
10
2
10-4
10-5
0
6.8/8.2
6.2
1
0.2
0.4
0.6
0.8
1V
VF
18114
0.1
2
1
5
2
5
18119
Fig. 1 - Forward Characteristics
10
IZ
2
5
100 mA
Fig. 4 - Dynamic Resistance vs. Zener Current
Ω
103
mW
500
Tj = 25 °C
7
5
4
400
Rzj
47 + 51
43
39
36
3
Ptot
2
300
102
7
200
5
4
3
100
2
10
0.1
0
0
100
200 °C
Tamb
18115
Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature
3
4 5
2
3 4 5
IZ
Ω
103
TJ = 25 °C
5
4
3
2
1
10
mA
Fig. 5 - Dynamic Resistance vs. Zener Current
Ω
1000
rzj
2
18120
Rzth
Rzth = RthA x VZ x
5
4
3
2
Δ VZ
ΔTj
102
100
5
4
3
5
4
3
2
2
10
2.7
3.6
4.7
5.1
5
4
3
2
5.6
1
0.1
18117
2
5
1
2
5
10
2
5
100 mA
IZ
Fig. 3 - Dynamic Resistance vs. Zener Current
Rev. 2.0, 28-Feb-13
10
5
4
3
negative
2
positive
1
1
18121
2
3
4 5
10
2
3 4 5
100 V
VZ at IZ = 5 mA
Fig. 6 - Thermal Differential Resistance vs. Zener Voltage
Document Number: 85763
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZX84-Series
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Vishay Semiconductors
Ω
100
mV/°C
100
IZ = 5 mA
7
5
4
Rzj
Δ VZ
ΔTj
3
2
80
60
10
7
40
5
4
3
20
2
Tj = 25 °C
IZ = 5 mA
1
1
2
3
10
4 5
2
3 4 5
18122
0
0
100 V
VZ
20
60
40
Fig. 7 - Dynamic Resistance vs. Zener Voltage
80
100 V
VZ
18125
Fig. 10 - Temperature Dependence of Zener Voltage vs.
Zener Voltage
mV/°C
25
V
9
20
7
8
Δ VZ
ΔTj
5 mA
IZ = 1 mA
20 mA
15
Δ VZ
51
6
5
43
4
10
36
3
5
2
1
0
0
-5
1
2
3
4 5
10
2
100 V
3 4 5
0
VZ
18123
25
0.7
VZ at IZ = 5 mA
0.6
8
0.4
7
0.3
0.2
6.2
5.9
0.1
5.6
0
1
0.8
0.6
0.4
0.2
0
5.1
-1
3.6
20
40
60
80
4.7
100 120 140 C
Tj
Fig. 9 - Change of Zener Voltage vs. Junction Temperature
Rev. 2.0, 28-Feb-13
140 °C
1.2
Δ VZ
0
80 100 120
Tj
ΔVZ = Rzth x IZ
1.4
0.5
18124
60
V
1.6
15
10
- 0.2
40
Fig. 11 - Change of Zener Voltage vs. Junction Temperature
V
0.8
20
18126
Fig. 8 - Temperature Dependence of Zener Voltage vs.
Zener Voltage
Δ VZ
IZ = 2 mA
-1
- 0.2
- 0.4
18127
1
2
3
4 5
10
2
3 4 5
100 V
VZ at IZ = 5 mA
Fig. 12 - Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium vs. Zener Voltage
Document Number: 85763
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZX84-Series
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Vishay Semiconductors
mA
30
V
5
10
12
ΔVZ = Rzth x IZ
Tj = 25 °C
4
lZ
Δ VZ
3
15
20
18
IZ = 5 mA
22
2
27
Test
10 current
IZ 5 mA
1
33 36
IZ = 2 mA
0
0
0
20
40
60
0
100 V
80
Tj = 25 °C
40
lZ
8.2
8
lZ
30
6
20
4
Test
current
IZ 5 mA
10
40 V
Tj = 25 °C
6.8
3.3 4.7
30
VZ
mA
10
3.9 5.6
2.7
20
Fig. 15 - Breakdown Characteristics
Fig. 13 - Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium vs. Zener Voltage
mA
50
10
18112
VZ
18128
Test
current
IZ 5 mA
39
51
43
47
2
0
0
0
18111
1
2
3
4
5
6
7
8
9 10 V
VZ
Fig. 14 - Breakdown Characteristics
Rev. 2.0, 28-Feb-13
0
18113
10 20 30 40 50 60 70 80 90 100 V
VZ
Fig. 16 - Breakdown Characteristics
Document Number: 85763
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZX84-Series
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Vishay Semiconductors
LAYOUT FOR RthJA TEST
Thickness: fiberglass 0.059" (1.5 mm)
Copper leads 0.012" (0.3 mm)
7.5 (0.3)
3 (0.12)
1 (0.4)
2 (0.8)
1 (0.4)
12 (0.47)
15 (0.59)
2 (0.8)
0.8 (0.03)
5 (0.2)
1.5 (0.06)
5.1 (0.2)
17451
PACKAGE DIMENSIONS in millimeters (inches): SOT-23
1.15 (0.045)
o8
°
0.2 (0.008)
0.098 (0.004)
0.175 (0.007)
0.1 (0.004) max.
0.550 ref. (0.022 ref.)
0.9 (0.035)
3.1 (0.122)
2.8 (0.110)
0.45 (0.018)
0.35 (0.014)
0.35 (0.014)
0° t
0.5 (0.020)
0.45 (0.018)
0.3 (0.012)
2.6 (0.102)
2.35 (0.093)
Foot print recommendation:
1 (0.039)
0.9 (0.035)
Document no.: 6.541-5014.01-4
Rev. 8 - Date: 23.Sept.2009
17418
Rev. 2.0, 28-Feb-13
0.9 (0.035)
0.7 (0.028)
2 (0.079)
1.43 (0.056)
1.20 (0.047)
0.45 (0.018)
0.35 (0.014)
1 (0.039)
0.9 (0.035)
0.95 (0.037)
0.95 (0.037)
Document Number: 85763
7
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Revision: 02-Oct-12
1
Document Number: 91000
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