Mitsubishi M54577P 7-unit 30ma transistor array Datasheet

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54577P
7-UNIT 30mA TRANSISTOR ARRAY
DESCRIPTION
M54577P is seven-circuit transistor arrays. The circuits are
made of NPN transistors. The semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.
PIN CONFIGURATION
INPUT
FEATURES
● Medium breakdown voltage (BV CEO ≥ 30V)
● Output sink current (IC(max) = 30mA)
● Driving available with MOS (PMOS, CMOS) IC output
● Low output saturation voltage (VCE(sat) = 0.35V at IC = 20mA)
● Wide operating temperature range (Ta = –20 to +75°C)
IN1→ 1
16 → O1
IN2→ 2
15 → O2
IN3→ 3
14 → O3
IN4→ 4
13 → O4
IN5→ 5
12 → O5
IN6→ 6
11 → O6
IN7→ 7
10 → O7
GND
8
9
OUTPUT
VCC
Package type 16P4(P)
CIRCUIT DIAGRAM
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps)
10k
VCC
23k
OUTPUT
INPUT
100k
22k
GND
FUNCTION
The M54577P has seven circuits consisting of NPN transistor.
This I C uses a predriver stage with a diode and 23kΩ resistor
in series to input. The output transistor emitters are all connected to the GND pin (pin 8), and VCC is connected to pin 9.
The collector current are capable of sinking 30mA maximum.
Collector-emitter supply voltage is 30V maximum.
Collector-emitter saturation voltage is below 0.35V (I C =
20mA) Drives active “H” input.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCC
VCEO
IC
VI
Pd
Topr
Tstg
Parameter
The seven circuits share the VCC and GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit : Ω
(Unless otherwise noted, Ta = –20 ~ +75 °C)
Conditions
Supply voltage
Collector-emitter voltage
Collector current
Output, H
Current per circuit output, L
Input voltage
Power dissipation
Ta = 25°C, when mounted on board
Ratings
13
Unit
V
–0.5 ~ +30
30
V
mA
–20 ~ V CC
V
Operating temperature
1.47
–20 ~ +75
Storage temperature
–55 ~ +125
W
°C
°C
Jan.2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54577P
7-UNIT 300mA TRANSISTOR ARRAY
RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
(Unless otherwise noted, Ta = –20 ~ +75°C)
Limits
Parameter
Supply voltage
Collector current (Current per 1 circuit)
IC
VIH
“H” input voltage
VIL
“L” input voltage
min
typ
max
4.5
0
5
10
13
20
3
0
—
—
VCC
1
Unit
V
mA
V
V
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol
Parameter
V (BR) CEO
Collector-emitter breakdown voltage
VCE(sat)
II
ICC
h FE
Limits
Test conditions
ICEO = 100µA
VCC = 4.5V, VI = 3V, IC = 10mA
Collector-emitter saturation voltage
VCC = 6V, V I = 3V, I C = 20mA
Input current
VCC = 4.5V, VI = 3V
VCC = 4.5V, VI = 3V
Supply current
VCC = 13V, VI = 3V
(Only one time operation)
VCE = 4V, VCC = 4.5V, I C = 20mA, Ta = 25°C
DC amplification factor
min
30
—
typ*
—
—
max
—
0.25
—
30
—
—
500
—
—
0.4
1.3
1200
0.35
90
0.9
2.3
—
Unit
V
V
µA
mA
—
* : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any conditions.
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25 °C)
Symbol
Parameter
ton
Turn-on time
toff
Turn-off time
Test conditions
CL = 15pF (note 1)
VCC
Limits
typ
Unit
max
—
210
—
ns
—
3200
—
ns
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
INPUT
min
Vo
50%
50%
INPUT
Measured device
RL
OUTPUT
PG
50Ω
CL
OUTPUT
50%
50%
ton
toff
(1)Pulse generator (PG) characteristics : PRR=1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50Ω, VP = 3VP-P
(2)Input-output conditions : RL = 500Ω, Vo = 10V, VCC = 6V
(3)Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
Jan.2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54577P
7-UNIT 300mA TRANSISTOR ARRAY
TYPICAL CHARACTERISTICS
DC Amplification Factor
Collector Current Characteristics
Thermal Derating Factor Characteristics
104
DC amplification factor hFE
Power dissipation Pd (W)
2.0
1.5
1.0
0.5
0
0
25
50
75
7
5
VCC = 4.5V
VCE = 4V
Ta
Ta ==75°C
75°C
Ta
Ta ==25°C
25°C
Ta
Ta ==–20°C
–20°C
3
103
7
5
3
102 0
10
100
Ambient temperature Ta (°C)
3
5 7 102
Grounded Emitter Transfer Characteristics
40
40
30
20
VI = 3.0V
VCC = 4.5V
Ta ==75°C
Ta
75°C
Ta ==25°C
Ta
25°C
Ta ==–20°C
Ta
–20°C
10
0
0.02
0.04
0.06
0.08
Output saturation voltage VCE(sat) (V)
Collector current Ic (mA)
Collector current Ic (mA)
5 7 101
Collector current Ic (mA)
Output Saturation Voltage
Collector Current Characteristics
0
3
VCC = 4.5V
VCE = 4V
Ta== 75°C
75°C
Ta
Ta== 25°C
25°C
Ta
Ta== –20°C
–20°C
Ta
30
20
10
0
0
1
2
3
4
Input voltage VI (V)
Jan.2000
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